Fabrication and structure properties of GaN nanowires by ammoniating Ga2O3 films (Englisch)
- Neue Suche nach: Xue, S.
- Neue Suche nach: Zhuang, H.
- Neue Suche nach: Li, B.
- Neue Suche nach: Hu, L.
- Neue Suche nach: Zhang, S.
- Neue Suche nach: Xue, C.
- Neue Suche nach: Xue, S.
- Neue Suche nach: Zhuang, H.
- Neue Suche nach: Li, B.
- Neue Suche nach: Hu, L.
- Neue Suche nach: Zhang, S.
- Neue Suche nach: Xue, C.
In:
MATERIALS LETTERS
;
61
, 18
;
3867-3869
;
2007
-
ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Fabrication and structure properties of GaN nanowires by ammoniating Ga2O3 films
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Beteiligte:
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Erschienen in:MATERIALS LETTERS ; 61, 18 ; 3867-3869
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Verlag:
- Neue Suche nach: Elsevier Science B.V., Amsterdam.
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Erscheinungsdatum:01.01.2007
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Format / Umfang:3 pages
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ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
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Sprache:Englisch
- Neue Suche nach: 620.1105 / 530
- Weitere Informationen zu Dewey Decimal Classification
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Klassifikation:
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Datenquelle:
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- IFC
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Editorial Board| 2007