New developments in the fabrication of amorphous silicon photovoltaic modules on very large 2.60 m x 2.20 m glass (Englisch)
- Neue Suche nach: Vetter, M.
- Neue Suche nach: Borrajo, J. P.
- Neue Suche nach: Andreu, J.
- Neue Suche nach: Vetter, M.
- Neue Suche nach: Borrajo, J. P.
- Neue Suche nach: Andreu, J.
In:
PHYSICA STATUS SOLIDI C CONFERENCES
;
7
, 3-4
;
1101-1104
;
2010
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:New developments in the fabrication of amorphous silicon photovoltaic modules on very large 2.60 m x 2.20 m glass
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Beteiligte:
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Erschienen in:PHYSICA STATUS SOLIDI C CONFERENCES ; 7, 3-4 ; 1101-1104
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Verlag:
- Neue Suche nach: John Wiley & Sons, Ltd
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Erscheinungsdatum:01.01.2010
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Format / Umfang:4 pages
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ISSN:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 530
- Weitere Informationen zu Dewey Decimal Classification
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Klassifikation:
DDC: 530 -
Datenquelle:
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Contents: Phys. Status Solidi C 7/3-4| 2010
- 493
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Preface: Phys. Status Solidi C 7/3-4Schropp, R. E. / Zeman, M. / Rath, J. K. / Adriaenssens, G. J. et al. | 2010
- 499
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Sir Nevill F. Mott Lecture AwardSchropp, R. E. et al. | 2010
- 501
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Walter E Spear: A TributeDavis, E. A. et al. | 2010
- 505
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Intensity dependence of quantum efficiency and photo-gating effects in thin film silicon solar cellsReynolds, S. / Main, C. / Smirnov, V. / Meftah, A. et al. | 2010
- 509
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Photoinduced volume changes in obliquely deposited a-SeLukacs, R. / Kugler, S. et al. | 2010
- 513
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Effect of hydrogen dilution profiling on the microscopic structure of amorphous and nanocrystalline silicon mixed-phase solar cellsYan, B. / Jiang, C. S. / Yan, Y. / Sivec, L. / Yang, J. / Guha, S. / Al-Jassim, M. M. et al. | 2010
- 517
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Microcrystalline silicon films and solar cells deposited at high rate by Matrix Distributed Electron Cyclotron Resonance (MDECR) plasmaKroely, L. / Ram, S. K. / Bulkin, P. / Cabarrocas, P. R. et al. | 2010
- 521
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Gas-temperature control in VHF- PECVD process for high-rate (>5 nm/s) growth of microcrystalline silicon thin filmsSobajima, Y. / Higuchi, T. / Chantana, J. / Toyama, T. / Sada, C. / Matsuda, A. / Okamoto, H. et al. | 2010
- 525
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Crystal nucleation in electron-beam evaporated amorphous silicon on ZnO:Al- and SiN-coated glass for thin film solar cellsSontheimer, T. / Becker, C. / Gall, S. / Rech, B. et al. | 2010
- 529
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Addition of SiF4 to standard SiH4+H2 plasma: an effective way to reduce oxygen contamination in mc-Si:H filmsAbramov, A. / Cabarrocas, P. R. et al. | 2010
- 533
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Kinetic roughening and mound surface growth in microcrystalline silicon thin filmsLiu, F. / Li, C. / Zhu, M. / Gu, J. / Zhou, Y. et al. | 2010
- 537
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Aligned microcrystalline silicon nanorods prepared by glancing angle hotwire chemical vapor deposition for photovoltaic applicationsMa, Y. / Liu, F. / Zhu, M. / Zhang, Z. et al. | 2010
- 541
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A new method used to control the structure of high rate microcrystalline silicon thin filmsZhang, X. D. / Zhang, H. / Yue, Q. / Wei, C. C. / Sun, J. / Hou, G. F. / Xiong, S. Z. / Geng, X. H. / Zhao, Y. et al. | 2010
- 545
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Characterization of microcrystalline Si films deposited at low temperatures with high rates by atmospheric-pressure plasma CVDOuchi, K. / Tabuchi, K. / Ohmi, H. / Kakiuchi, H. / Yasutake, K. et al. | 2010
- 549
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Dominant ion species in VHF SiH4/H2 plasmaYamauchi, Y. / Baba, T. / Yamane, T. / Takeuchi, Y. / Takatsuka, H. / Muta, H. / Uchino, K. / Kawai, Y. et al. | 2010
- 553
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Plasma emission diagnostics during fast deposition of microcrystalline silicon thin films in matrix distributed electron cyclotron resonance plasma CVD systemRam, S. K. / Kroely, L. / Kasouit, S. / Bulkin, P. / Cabarrocas, P. R. et al. | 2010
- 557
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Highly conductive boron-doped hydrogenated microcrystalline silicon films obtained by hot wire depositionBeyer, W. / Carius, R. / Einsele, F. / Lennartz, D. / Niessen, L. / Pennartz, F. et al. | 2010
- 561
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Effect of plasma power on properties of a-SiC:H films deposited by DC magnetron sputteringBrighet, A. / Mokkadem, K. / Fedala, A. / Kechouane, M. et al. | 2010
- 565
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Structural properties of intrinsic and doped nc-Si:H films prepared by RFMS: Study as function of deposition time and substrate temperatureBelfedal, A. / Bouizem, Y. / Benlakehal, D. / Baghdad, R. / Sib, J. D. / Kebab, A. / Chahed, L. / Zellama, K. et al. | 2010
- 571
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Influence of hydrogen dilution on surface roughness development of a-Si:H thin films grown by remote plasma depositionWank, M. A. / Illiberi, A. / Tichelaar, F. D. / van Swaaij, R. A. / van de Sanden, M. C. / Zeman, M. et al. | 2010
- 575
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Effects of pressure and inter-electrode distance on deposition of nanocrystalline silicon under high pressure conditionsLiu, Y. / Verkerk, A. D. / Rath, J. K. / Schropp, R. E. / Goedheer, W. J. et al. | 2010
- 579
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Synthesis of Nd-doped Si thin films by laser ablationKawai, S. / Komuro, S. / Katsumata, T. et al. | 2010
- 583
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Investigation of Cat-CVD amorphous silicon film properties under high catalyzer temperatureYen, K. H. / Nishizaki, S. / Ohdaira, K. / Matsumura, H. / Huang, Y. T. / Zan, H. W. / Tsai, C. C. et al. | 2010
- 588
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Uniformity study of amorphous and microcrystalline silicon thin films deposited on 10 cm x 10 cm glass substrate using hot wire CVD techniqueFrigeri, P. A. / Nos, O. / Calvo, J. D. / Carreras, P. / Roldan, R. / Asensi, J. M. / Bertomeu, J. et al. | 2010
- 592
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Amorphous to nanocrystalline transition in HWCVD Si:H films by substrate temperature variationGogoi, P. / Jha, H. S. / Deva, D. / Agarwal, P. et al. | 2010
- 596
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The effect of the film H content on the crystallization of laser processed and thermally annealed HWCVD a-Si:HMahan, A. H. / Dabney, M. S. / Parilla, P. A. / Ginley, D. S. et al. | 2010
- 600
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Polycrystalline silicon thin films on glass obtained by nickel-induced crystallization of amorphous siliconSchmidt, J. A. / Budini, N. / Arce, R. D. / Buitrago, R. H. et al. | 2010
- 604
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Polycrystalline Si films with unique microstructures formed from amorphous Si films by non-thermal equilibrium flash lamp annealingOhdaira, K. / Nishikawa, T. / Shiba, K. / Takemoto, H. / Matsumura, H. et al. | 2010
- 608
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Metal induced crystallization of a-Si using a nano-layer of silicon oxide mask (MMIC)Wu, C. / Meng, Z. / Li, X. / Zhao, S. / Liu, Z. / Li, J. / Xiong, S. / Wong, M. / Kwok, H. S. et al. | 2010
- 612
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Ni-Si oxide as an inducing crystallization source for making poly-SiMeng, Z. / Liu, Z. / Zhao, S. / Wong, M. / Kwok, H. S. / Li, J. / Wu, C. / Xiong, S. et al. | 2010
- 616
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The effect of laser crystallization on the carrier transport and electroluminescence from nanocrystalline Si/SiO2 multilayersWang, T. / Sun, H. C. / Liu, Y. / Chen, G. R. / Xu, J. / Wang, D. Q. / Wan, N. / Li, W. / Huang, X. F. / Ma, Z. Y. et al. | 2010
- 620
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The influence of Si precursor on poly-Si crystallized by YAG laserYao, Y. / Li, J. / Wang, S. / Meng, Z. / Wu, C. / Xiong, S. et al. | 2010
- 624
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Study of phase separation and photo- luminescent emission in silicon nanostructured PECVD systemsRibeiro, M. / Pereyra, I. et al. | 2010
- 628
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Correlation between microstructure and residual stress of nanocrystalline silicon filmsChowdhury, A. / Ray, S. et al. | 2010
- 632
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Positron annihilation depth-profiling as a promising tool for the structural analysis of light-soaked a-Si:H absorber layersEijt, S. W. / Zhu, H. / Schut, H. / Tijssen, M. / Zeman, M. et al. | 2010
- 636
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First principles structure modeling for amorphous Si-rich transition metal silicidesMiyazaki, T. / Uchida, N. / Kanayama, T. et al. | 2010
- 640
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Optoelectronic properties simulation of hydrogenated microcrystalline silicon Schottky diodeChahi, M. / Bouhekka, A. / Sib, J. D. / Kebab, A. / Bouizem, Y. / Chahed, L. et al. | 2010
- 646
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Optical properties of intrinsic hydrogenated amorphous silicon at high electric fieldPirc, M. / Furlan, J. / Levstek, A. / Topic, M. et al. | 2010
- 650
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Quantum chemical modelling of Si sub-surface amorphisation due to incorporation of H atoms and its stabilisation by O atomsPushkarchuk, A. / Saad, A. / Pushkarchuk, V. / Fedotov, A. / Mazanik, A. / Zinchuk, O. / Turishchev, S. et al. | 2010
- 654
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Variation of the Fermi level in n-type microcrystalline silicon by electron bombardment and successive annealing: ESR and conductivity studiesAstakhov, O. / Carius, R. / Petrusenko, Y. / Borysenko, V. / Barankov, D. / Finger, F. et al. | 2010
- 658
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The effect of aging on the dark conductivity and 1/f noise in hydrogenated microcrystalline silicon thin filmsGunes, M. / Johanson, R. E. / O.Kasap, S. / Finger, F. / Lambertz, A. et al. | 2010
- 662
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Lifetime distribution of photoluminescence and radiative recombination rate of electron-hole pairs in a-Si:HOgihara, C. / Morigaki, K. et al. | 2010
- 666
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Effect of light soaking on CPM absorption spectra in silicon films with mixed amorphous-nanocrystalline structureKazanskii, A. / Kong, G. / Zeng, X. / Hao, H. et al. | 2010
- 670
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Thermopower and Hall-effect investigations of microcrystalline silicon filmsSellmer, C. / Bronger, T. / Beyer, W. / Carius, R. et al. | 2010
- 674
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Luminescence from hydrogen-free silicon nanostructures in amorphous hydrogenated siliconMurayama, K. / Monji, K. / Deki, H. et al. | 2010
- 679
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The annealing temperature effect on the electrical properties of boron-doped hydrogenated amorphous silicon a-Si:H(B)Khelifati, N. / Tata, S. / Rahal, A. / Cherfi, R. / Fedala, A. / Kechouane, M. / Mohammed-Brahim, T. et al. | 2010
- 683
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Erbium-doped nanocrystalline silicon thin films produced by RF sputtering - annealing effect on the Er emissionCerqueira, M. F. / Monteiro, T. / Soares, M. J. / Kozanecki, A. / Alpuim, P. / Alves, E. et al. | 2010
- 688
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Excitation power dependent photolu- minescence of PECVD a-SiOx:H (x<2) thin filmsBacı / oglu, A. 3. / Kodolbas, A. O. / Oktu, O. et al. | 2010
- 692
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The kinetics of light-induced defect creation in hydrogenated polymorphous silicon - stretched exponential relaxationMorigaki, K. / Hikita, H. / Takeda, K. / Cabarrocas, P. R. et al. | 2010
- 696
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Photoacoustic spectroscopy and electron spin resonance studies of defects in microcrystalline silicon thin films grown on rough surfacesToyama, T. / Kurihara, M. / Sobajima, Y. / Okamoto, H. / Takahashi, S. / Misaka, N. / Tsutsumi, Y. et al. | 2010
- 700
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Instability effects in hydrogenated microcrystalline silicon thin filmsYilmaz, G. / Turan, E. / Gunes, M. / Smirnov, V. / Finger, F. / Bruggemann, R. et al. | 2010
- 704
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Raman mapping of microcrystalline silicon thin films with high spatial resolutionLedinsky, M. / Vetushka, A. / Stuchlik, J. / Fejfar, A. / Kocka, J. et al. | 2010
- 708
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Predicting mc-Si:H crystal orientation from Raman measurement under polarized lightAgbo, S. N. / van Swaaij, R. A. / Zeman, M. / Sutta, P. et al. | 2010
- 712
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Electrical and structural properties of p -type nanocrystalline silicon grown by LEPECVD for photovoltaic applicationsMicard, G. / Hahn, G. / Terheiden, B. / Chrastina, D. / Isella, G. / Moiseev, T. / Cavalcoli, D. / Cavallini, A. / Binetti, S. / Acciarri, M. et al. | 2010
- 716
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Optimized-geometry ARROW waveguides using TiO2 as anti-resonant layerCarvalho, D. O. / Albertin, K. F. / Alayo, M. I. et al. | 2010
- 720
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Selective patterning of covalent molecular grafting on doped amorphous silicon templatesSabbah, H. / Chu, V. / Conde, J. P. / Ababou-Girard, S. / Delhaye, T. / LePottier, A. / Solal, F. / Godet, C. et al. | 2010
- 724
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Transformation of photoluminescence spectra at the bioconjugation of core-shell CdSe/ZnS quantum dotsMacotela, L. G. / Douda, J. / Torchynska, T. V. / Sierra, R. P. / Shcherbyna, L. et al. | 2010
- 728
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Role of the tip induced local anodic oxidation in the conductive atomic force microscopy of mixed phase silicon thin filmsVetushka, A. / Fejfar, A. / Ledinsky, M. / Rezek, B. / Stuchlik, J. / Kooka, J. et al. | 2010
- 732
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Effect of chemical composition of SiOx films on rapid formation of Si nanocrystals induced by thermal plasma jet irradiationOkada, T. / Higashi, S. / Kaku, H. / Makihara, K. / Furukawa, H. / Hiroshige, Y. / Miyazaki, S. et al. | 2010
- 735
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Quantized Auger recombination and carrier multiplication in semiconductor nanoparticles and carbon nanotubesTaguchi, S. / Ueda, A. / Tayagaki, T. / Matsuda, K. / Kanemitsu, Y. et al. | 2010
- 739
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Enhanced blue-orange-red light emission from nc-Si:H/SiO2 pillar arrays using nanosphere lithographyMa, Z. Y. / Liu, G. Y. / Yan, M. Y. / Xia, G. Y. / Jiang, X. F. / Ling, T. / Sun, H. C. / Wang, D. Q. / Dong, H. P. / Xu, L. et al. | 2010
- 743
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Dimensional constraints and percolation theory: physical mechanisms controlling electronic structure and defects in high-k transition metal oxide dielectricsLucovsky, G. et al. | 2010
- 747
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Theoretical investigations of defects in a Si-based digital ferromagnetic heterostructure - a spintronic materialFong, C. Y. / Shauhgnessy, M. / Snow, R. / Yang, L. H. et al. | 2010
- 750
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Employing the effective medium approximation to model the optical properties of crystallized a-Si:H obtained by MICMuller, T. F. / Knoesen, D. / Arendse, C. J. / Halindintwali, S. / Malgas, G. F. / Houweling, Z. S. / Schropp, R. E. et al. | 2010
- 754
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Aluminum doped silicon-carbon alloys prepared by hot wire chemical vapor depositionChen, T. / Schmalen, A. / Wolff, J. / Yang, D. / Carius, R. / Finger, F. et al. | 2010
- 758
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Optical and structural characterization of silicon-carbon-nitride thin films for optoelectronicsSwatowska, B. / Stapinski, T. et al. | 2010
- 762
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Low temperature deposition of microcrystalline silicon germanium Si1-xGex by RF-PECVDFedala, A. / Simon, C. / Coulon, N. / Mohammed-Brahim, T. / Abdeslam, M. / Chami, A. C. et al. | 2010
- 766
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Characterizations of nanostructured silicon-carbon films deposited on p-layer by PECVDCoscia, U. / Ambrosone, G. / Basa, D. K. / Ferrero, S. / Veneri, P. D. / Mercaldo, L. V. / Usatii, I. / Tucci, M. et al. | 2010
- 770
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Study on the excimer laser annealed amorphous hydrogenated silicon carbon films deposited by PECVDAmbrosone, G. / Basa, D. K. / Coscia, U. / Tresso, E. / Chiodoni, A. / Celasco, E. / Pinto, N. / Murri, R. et al. | 2010
- 774
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Nanocrystallites formation in a-SiC by low power plasma enhanced chemical vapour depositionBhaduri, A. / Kole, A. / Chaudhuri, P. et al. | 2010
- 778
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Paramagnetic states in c-SiC:H thin films prepared by Hot-Wire CVD at low temperaturesXiao, L. / Astakhov, O. / Carius, R. / Chen, T. / Wang, H. / Stutzmann, M. / Finger, F. et al. | 2010
- 782
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Optoelectronic properties of a-Si1-xCx:H films grown in hydrogen diluted silane-methane plasmaVygranenko, Y. / Fernandes, M. / Louro, P. / Vieira, M. / Sazonov, A. et al. | 2010
- 786
-
a-SiC:H films deposited by PECVD for MEMS applicationsPelegrini, M. V. / Rehder, G. P. / Pereyra, I. et al. | 2010
- 790
-
Preparations of P- and N-doped hydrogenated microcrystalline cubic silicon carbide films by VHF plasma enhanced chemical vapor deposition method for Si thin film solar cellsYoshida, N. / Terazawa, S. / Takeuchi, A. / Yoneyama, N. / Morino, T. o. / Jun, Z. / Natsuhara, H. / Nonomura, S. et al. | 2010
- 793
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A study of metal contact properties on thermal annealed PECVD SiC thin films for MEMS applicationsOliveira, A. R. / Pereyra, I. / Carreno, M. N. et al. | 2010
- 797
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Columnar structured amorphous carbon nitride filmsAono, M. / Kikuchi, S. / Tamura, N. / Kitazawa, N. / Watanabe, Y. / Nitta, S. et al. | 2010
- 801
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Novel morphology of chemical vapor deposited diamond filmsTang, C. J. / Fernandes, A. J. / Abe, I. / Gracio, J. / Buijnsters, J. G. / Pinto, J. L. et al. | 2010
- 805
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Electronic properties of diamond-like carbon films modified by silver nanoclustersSarsembinov, S. S. / Prikhodko, O. Y. / Ryaguzov, A. P. / Maksimova, S. Y. / Daineko, Y. A. / Mahmoud, F. A. et al. | 2010
- 808
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Electrical characterization of a-C:H as a dielectric material in metal/insulator/metal structuresZuniga-I., C. / Kosarev, A. / Torres-J., A. / Rosales-Q., P. / Calleja-A., W. / Hidalga-W., F. J. / Malik, O. et al. | 2010
- 812
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Fine particles in amorphous silicon germanium thin filmsBhaduri, A. / Chaudhuri, P. et al. | 2010
- 816
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Investigation of light induced degradation in hydrogenated amorphous silicon-germanium alloy thin films using temperature dependent photoconductivityGunes, M. / Turan, E. / Yilmaz, G. et al. | 2010
- 820
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Structural and defect changes of hydrogenated SiGe films due to annealing up to 600degreeCSladek, P. / Bursikova, V. / Stahel, P. et al. | 2010
- 824
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Investigation of structural properties of high-rate deposited SiNx films prepared at low temperatures (100-300 degreeC) by atmospheric-pressure plasma CVDYamaguchi, Y. / Nakamura, K. / Ohmi, H. / Kakiuchi, H. / Yasutake, K. et al. | 2010
- 828
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A new luminescent defect state in low temperature grown amorphous SiNxOy thin filmsDong, H. / Chen, K. / Wang, D. / Li, W. / Ma, Z. / Xu, J. / Huang, X. et al. | 2010
- 832
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Annealing effects on aSiNx grown by PECVD using different gas mixturesMercaldo, L. V. / Veneri, P. D. / Esposito, E. M. / Tucci, M. et al. | 2010
- 836
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Amorphous silicon and silicon nitride channel optical waveguidesCelasco, E. / Quaglio, M. / Chiodoni, A. / Ricciardi, C. / Pirri, C. F. / Dominici, L. / Michelotti, F. / Angelis, F. D. / Fabrizio, E. D. / Giorgis, F. et al. | 2010
- 840
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Characterization of AlN films deposited by r.f. reactive sputtering aiming MEMS applicationsPelegrini, M. V. / Pereyra, I. et al. | 2010
- 844
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Analysis of the forgotten parts of the Ge K edge spectra: life before the EXAFS oscillationsLucovsky, G. / Washington, J. P. / Miotti, L. / Paesler, M. et al. | 2010
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Thermal effects in Ge-Sb-Te phase- change memory materials during multiple thermal cyclingKozyukhin, S. / Sherchenkov, A. / Gorschkova, E. / Kudoyarova, V. / Vargunin, A. et al. | 2010
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Investigation of defect states in the amorphous phase of phase change alloys GeTe and Ge2Sb2Te5Luckas, J. / Krebs, D. / Salinga, M. / Wuttig, M. / Longeaud, C. et al. | 2010
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Dynamics of principal photoinduced effects in amorphous chalcogenides: In-situ simultaneous measurements of photodarkening, volume changes, and defect creationNakagawa, N. / Shimakawa, K. / Itoh, T. / Ikeda, Y. et al. | 2010
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Structure and optical properties in the amorphous to crystalline transition in AgSbSe2 thin filmsHamam, M. / El-Gendy, Y. A. / Selim, M. S. / Teleb, N. H. / Salem, A. M. et al. | 2010
- 865
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Conductivity oscillations in Ge2Sb2Te5 films stimulated by phase transformationsKozyukhin, S. / Voronkov, E. / Egarmin, K. et al. | 2010
- 869
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Transport properties and photo- conductivity of nanocrystalline PbTe(In) filmsDobrovolsky, A. / Chernichkin, V. / Belogorokhov, I. / Dashevsky, Z. / Kasiyan, V. / Ryabova, L. / Khokhlov, D. et al. | 2010
- 873
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Excess noise in amorphous selenium p-i-n devicesMajid, S. H. / Johanson, R. E. et al. | 2010
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Effect of As alloying on the valence band tail states in a-SeBenkhedir, M. L. / Djefaflia, F. / Mansour, M. / Qamhieh, N. et al. | 2010
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Synthesis and characterization of As2X3 (X = Se, S)-Eu (THD)3 hybrid materialsKudoyarova, V. / Kozyukhin, S. / Lebedev, V. / Marchenko, A. et al. | 2010
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Boson peak in low-frequency Raman spectra of AsxS100-x glasses: nanocluster contributionHolomb, R. / Mitsa, V. / Johansson, P. / Veres, M. et al. | 2010
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A microscopic bonding model for the compositional dependence of the first sharp diffraction peak (FSDP) in GexSe1-xalloysLucovsky, G. / Phillips, J. C. et al. | 2010
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Ab initio calculations and the effect of atomic substitution in the Raman spectra of As(Sb,Bi)2S3 filmsKondrat, O. / Popovich, N. / Holomb, R. / Mitsa, V. / Petrachenkov, O. / Koos, M. / Veres, M. et al. | 2010
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On nanoheteromorphous structure in amorphous As2S3 films prepared by different methodsSarsembinov, S. S. / Prikhodko, O. Y. / Ryaguzov, A. P. / Maksimova, S. Y. / Daineko, E. A. / Iskakov, R. M. / Ushanov, V. Z. et al. | 2010
- 901
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CuxSnSx+1 (x = 2, 3) thin films grown by sulfurization of metallic precursors deposited by dc magnetron sputteringFernandes, P. A. / Salome, P. M. / da Cunha, A. F. et al. | 2010
- 905
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Structural, optical and thermal studies on PbS nanocubesPaul, G. S. / Agarwal, P. et al. | 2010
- 909
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Evolution of nanostructure with reaction time for ZnS synthesized by solvothermal processPaul, G. S. / Agarwal, P. et al. | 2010
- 913
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Influence of selenization pressure on the growth of Cu2ZnSnSe4 films from stacked metallic layersSalome, P. M. / Fernandes, P. A. / Cunha, A. F. et al. | 2010
- 917
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Study of the growth process and optoelectrical properties of nanocrystalline Cu3BiS3 thin filmsMesa, F. / Dussan, A. / Gordillo, G. et al. | 2010
- 921
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Cluster modeling of quasi-adaptive phases in vitreous germanium selenidesShpotyuk, O. / Golovchak, R. / Boyko, V. / Kozyukhin, S. et al. | 2010
- 925
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The effect of substrate temperature on optoelectronic characteristics of surface-textured ZnO:Al films for micromorph silicon tandem solar cellsKang, D. W. / Kuk, S. H. / Ji, K. S. / Ahn, S. W. / Han, M. K. et al. | 2010
- 929
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Deposition of ZnS1-xOx thin films by the photochemical dip coating method and application for heterojunction solar cellsIchimura, M. / Akita, K. et al. | 2010
- 933
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Optical properties of TiO2 thin films prepared by chemical spray pyrolysis from aqueous solutionsAyouchi, R. / Casteleiro, C. / Schwarz, R. / Barrado, J. R. / Martin, F. et al. | 2010
- 937
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Study of metal-oxide-semiconductor capacitors with r.f. magnetron sputtering TiOxNy films dielectric layerAlbertin, K. F. / Pereyra, I. et al. | 2010
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Defects and structure of c-SiOx:H deposited by PECVDXiao, L. / Astakhov, O. / Carius, R. / Lambertz, A. / Grundler, T. / Finger, F. et al. | 2010
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Light scattering properties of surface-textured substratesJager, K. / Isabella, O. / Zhao, L. / Zeman, M. et al. | 2010
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Electrical properties of thin-films wide-band gap semiconductor TiO2 prepared by CVDBessergenev, V. / Gomes, H. L. et al. | 2010
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Transparent conducting thin films by co-sputtering of ZnO-ITO targetsCarreras, P. / Antony, A. / Roldan, R. / Nos, O. / Frigeri, P. A. / Asensi, J. M. / Bertomeu, J. et al. | 2010
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Hall effect and conductivity in zinc oxide (ZnO) doped by thermal diffusion of indium and copperJuarez-Diaz, G. / Martinez, J. / Garcia-Cruz, M. L. / Pena-Sierra, R. / Garcia, J. A. / Pacio, M. et al. | 2010
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TiOxNy anti-resonant layer ARROW waveguidesCarvalho, D. O. / Albertin, K. F. / Alayo, M. I. et al. | 2010
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Hollow core ARROW waveguides fabricated with SiOxNy films deposited at low temperaturesGollub, A. H. / Carvalho, D. O. / Paiva, T. C. / Alayo, M. I. et al. | 2010
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Excimer laser wet oxidation of hydrogenated amorphous siliconPersheyev, S. K. / Fan, Y. / Reynolds, S. / Rose, M. J. et al. | 2010
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Optical and photoelectric properties of nanocrystalline SnO2 - CdSe quantum dot structuresDobrovolsky, A. / Vasiliev, R. / Drozdov, K. / Maslova, O. / Rumyantseva, M. / Gaskov, A. / Ryabova, L. / Khokhlov, D. et al. | 2010
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Composition and bonding structure of plasma-assisted ALD Al2O3 filmsVerlaan, V. / van den Elzen, L. R. / Dingemans, G. / van de Sanden, M. C. / Kessels, W. M. et al. | 2010
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Two-dimensional Langevin recombinationJuska, G. / Genevicius, K. / Nekrasas, N. / Sliauzys, G. et al. | 2010
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Study of organic light emitting devices (OLEDs) with optimal emission effi- ciencySingh, J. et al. | 2010
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Electronic memory effect in a crystalline silicon/polyether heterostructureNeitzert, H. C. / Concilio, S. / Iannelli, P. / Vacca, P. et al. | 2010
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Role of bathocuproine as hole-blocking and electron-transporting layer in organic light emitting devicesTomova, R. / Petrova, P. / Stoycheva-Topalova, R. et al. | 2010
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Microscopic study of carrier transport in the organic semiconductor zinc-phthalocyanineDuarte, J. P. / Alberto, H. V. / Vilao, R. C. / Gil, J. M. / Weidinger, A. / Campos, N. A. et al. | 2010
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Investigation of electric charge transport in conjugated polymer P3HT: PCBM solar cell with temperature dependent current and capacitance measurementsYu, P. / Mencaraglia, D. / Darga, A. / Migan, A. / Rabdbeh, R. / Ratier, B. / Moliton, A. et al. | 2010
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A recombination model for a-Si:H/c-Si heterostructuresLeendertz, C. / Stangl, R. / Schulze, T. F. / Schmidt, M. / Korte, L. et al. | 2010
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B-doped a-Si:H contact improvement on silicon heterojunction solar cells and interdigitated back contact structureDesrues, T. / Ribeyron, P. J. / Vandeneynde, A. / Ozanne, A. S. / Souche, F. / Munoz, D. / Denis, C. / Diouf, D. / Kleider, J. P. et al. | 2010
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a-SiC:H passivation for crystalline silicon solar cellsEhling, C. / Werner, J. H. / Schubert, M. B. et al. | 2010
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Annealing studies of substoichiometric amorphous SiOx layers for c-Si surface passivationEinsele, F. / Beyer, W. / Rau, U. et al. | 2010
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Effect of acid-based chemical polish etching on the performance of silicon heterojunction solar cellsZhang, Y. / Zhou, Y. / Jiang, Z. / Liu, F. / Zhu, M. et al. | 2010
- 1029
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Development of LASER fired contacts on silicon heterojunction solar cells for the application to rear contact structuresMunoz, D. / Desrues, T. / Ribeyron, P. J. / Orpella, A. / Martin, I. / Voz, C. / Alcubilla, R. et al. | 2010
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2D simulations of interdigitated back contact heterojunction solar cells based on n-type crystalline siliconDiouf, D. / Kleider, J. P. / Desrues, T. / Ribeyron, P. J. et al. | 2010
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Study of the interfacial properties of amorphous silicon/n-type crystalline silicon heterojunction through static planar conductance measurementsFavre, W. / Labrune, M. / Dadouche, F. / Gudovskikh, A. S. / Cabarrocas, P. R. / Kleider, J. P. et al. | 2010
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Analysis of thin-film silicon solar cells with white paint back reflectorsLipovsek, B. / Krc, J. / Isabella, O. / Zeman, M. / Topic, M. et al. | 2010
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Using amorphous silicon solar cells to boost the viability of luminescent solar concentratorsFarrell, D. J. / Sark, W. G. / Velthuijsen, S. T. / Schropp, R. E. et al. | 2010
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Improving the built-in potential of p-i-n amorphous silicon solar cellsCaputo, D. / de Cesare, G. / Tucci, M. et al. | 2010
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Microcrystalline silicon n-i-p solar cells prepared with microcrystalline silicon oxide (mc-SiOx:H) n-layerSmirnov, V. / Bottler, W. / Lambertz, A. / Wang, H. / Carius, R. / Finger, F. et al. | 2010
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Amorphous silicon-based multilayers for photovoltaic applicationsZeman, M. / Isabella, O. / Tichelaar, F. D. / Luxembourg, S. L. et al. | 2010
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Amorphous silicon thin-film solar cells deposited on flexible substrates using different zinc oxide layersAlpuim, P. / Samantilleke, A. / Marins, E. / Oliveira, F. / Cerqueira, M. F. / Rebouta, L. / Stefanov, S. / Chiussi, S. / Serra, C. / Bouree, J. E. et al. | 2010
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Degradation of micromorph silicon solar cells after exposure to 65 MeV protonsNeitzert, H. C. / Labonia, L. / Citro, M. / Delli Veneri, P. / Mercaldo, L. et al. | 2010
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Window layer development for microcrystalline silicon solar cells in n-i-p configurationBottler, W. / Smirnov, V. / Lambertz, A. / Hupkes, J. / Finger, F. et al. | 2010
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Plasma deposition of p-i-n microcrystalline silicon solar cells using a single plasma enhanced chemical vapor deposition chamber: study of the phosphorus contaminationWang, G. H. / Zhang, X. D. / Xu, S. Z. / Wei, C. C. / Sun, J. / Xiong, S. Z. / Geng, X. H. / Zhao, Y. et al. | 2010
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High efficiency large area a-SiGe:H based multi-junction solar cells using MVHFXu, X. / Beglau, D. / Pietka, G. / Ehlert, S. / Su, T. / Zhang, J. / Li, Y. / Lord, K. / Yue, G. / Yan, B. et al. | 2010
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Low-temperature deposition of high quality b-FeSi2 films by co-sputtering of Fe and Si for b-FeSi2/Si heterojunction solar cellHou, G. / Yu, C. / Liu, F. / Sun, J. / Geng, X. / Zhao, Y. et al. | 2010
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N-type hydrogenated amorphous silicon oxide containing a microcrystalline silicon phase as an intermediate reflector in silicon thin film solar cellsGrundler, T. / Lambertz, A. / Finger, F. et al. | 2010
- 1089
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Structural evolution optimization at p/i interface and in the bulk intrinsic-layer for high efficiency microcrystalline silicon solar cellsHou, G. / Han, X. / Geng, X. / Zhang, X. / Wei, C. / Sun, J. / Chen, X. / Zhang, J. / Zhao, Y. et al. | 2010
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Thin film silicon deposited at 100 degreeC by VHF PECVD: optoelectronic properties and incorporation in solar cellsBrinza, M. / Rath, J. K. / Schropp, R. E. et al. | 2010
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Inline deposition of microcrystalline silicon solar cells using a linear plasma sourceZimmermann, T. / Strobel, C. / Albert, M. / Beyer, W. / Gordijn, A. / Flikweert, A. J. / Kuske, J. / Bartha, J. W. et al. | 2010
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New developments in the fabrication of amorphous silicon photovoltaic modules on very large 2.60 m x 2.20 m glassVetter, M. / Borrajo, J. P. / Andreu, J. et al. | 2010
- 1105
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Performance of amorphous and microcrystalline silicon pin solar cells under variable light intensityNath, M. / Chakraborty, S. / Kim, K. H. / Johnson, E. V. / Roca i Cabarrocas, P. / Chatterjee, P. et al. | 2010
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Dependence of transport properties in tunnel junction on boron dopingShi, M. J. / Zeng, X. B. / Liu, S. Y. / Peng, W. B. / Xiao, H. B. / Liao, X. B. / Wang, Z. G. / Kong, G. L. et al. | 2010
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Plasmas for texturing, cleaning, and deposition: towards a one pump down process for heterojunction solar cellsMoreno, M. / Daineka, D. / Roca i Cabarrocas, P. et al. | 2010
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Effect of high crystalline p /i interface layer on the performance of microcrystalline silicon solar cells deposited in a single-chamber systemZhang, X. D. / Sun, F. H. / Wang, G. H. / Xu, S. Z. / Wei, C. C. / Hou, G. F. / Sun, J. / Xiong, S. Z. / Geng, X. H. / Zhao, Y. et al. | 2010
- 1120
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Rough glass by 3d texture transfer for silicon thin film solar cellsZhang, W. / Bunte, E. / Worbs, J. / Siekmann, H. / Kirchhoff, J. / Gordijn, A. / Hupkes, J. et al. | 2010
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A new structure of counter electrode used for dye-sensitized solar cellsJi, W. W. / Zhang, X. D. / Zhao, Y. / Yang, Z. H. / Cai, N. / Wei, C. C. / Sun, J. / Xiong, S. Z. et al. | 2010
- 1128
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Synthesis of NaYF4: Yb, Er nanocrystals and its application in silicon thin film solar cellsZhang, X. D. / Jin, X. / Wang, D. F. / Xiong, S. Z. / Geng, X. H. / Zhao, Y. et al. | 2010
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Advantage of plasma-less deposition: Cat-CVD fabrication of a-Si TFT with current drivability equivalent to poly-Si TFTMatsumura, H. / Ohdaira, K. / Nishizaki, S. et al. | 2010
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Performance and stability of low temperature hydrogenated amorphous silicon thin film transistors fabricated on stainless steel substrateKim, S. H. / Kim, S. K. / Lee, J. K. / Lee, S. W. / Lee, H. K. / Peak, S. H. / Park, Y. I. / Kim, C. D. / Hwang, Y. K. / Chung, I. J. et al. | 2010
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Low temperature processed p-type bottom gate microcrystalline silicon thin film transistorsMoustapha, O. / Abramov, A. / Daineka, D. / Oudwan, M. / Bonnassieux, Y. / Roca i Cabarrocas, P. et al. | 2010
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Ambipolar characteristics of microcrystalline silicon thin-film transistorsChan, K. Y. / Gordijn, A. / Stiebig, H. / Knipp, D. et al. | 2010
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N and P type top-gate microcrystalline silicon TFTs processed at low temperature (T < 200 degreeC) on the same glass substrateSouleiman, I. / Kandoussi, K. / Belarbi, K. / Cherfi, R. / Fedala, A. / Coulon, N. / Simon, C. / Mohammed-Brahim, T. et al. | 2010
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Decreasing the thickness of the active layer of microcrystalline silicon TFTsBelarbi, K. / Kandoussi, K. / Souleiman, I. / Simon, C. / Coulon, N. / Mohammed-Brahim, T. et al. | 2010
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Spectral selectivity constraints in fluo- rescence detection of biomolecules using amorphous silicon based detectorsConde, J. P. / Joskowiak, A. / Lipovsek, B. / Pimentel, A. / Pereira, A. T. / Santos, M. / Krc, J. / Topic, M. / Prazeres, D. M. / Chu, V. et al. | 2010
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Amorphous silicon based p-i-i-n photodetectors for point-of-care testingSamann, M. / Furin, D. / Thielmann, J. / Pfafflin, A. / Proll, G. / Harendt, C. / Gauglitz, G. / Schleicher, E. / Schubert, M. B. et al. | 2010
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Characterization of the common mode rejection ratio of amorphous silicon balanced photodiodeCaputo, D. / de Cesare, G. / Nascetti, A. / Tucci, M. et al. | 2010
- 1168
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Properties of gas sensors based on photochemically deposited nano- crystalline SnO2 filmsIchimura, M. / Baoleer, A. / Sueyoshi, T. et al. | 2010
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Measurements of thermal characteristics in silicon germanium un-cooled micro-bolometersMoreno, M. / Ambrosio, R. / Torres, A. / Kosarev, A. / Garcia, M. / Mireles, J. et al. | 2010
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UV-sensitive optical sensors based on ITO-gallium phosphide heterojunctionsMalik, O. / Javier De la Hidalga-Wade, F. / Zuniga-Islas, C. / Abundis Patino, J. H. et al. | 2010
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An overview of uncooled infrared sensors technology based on amorphous silicon and silicon germanium alloysAmbrosio, R. / Moreno, M. / Mireles, J. / Torres, A. / Kosarev, A. / Heredia, A. et al. | 2010
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Optical processing devices based on a-SiC:H multilayer architecturesVieira, M. / Louro, P. / Vieira, M. A. / Fernandes, M. / Costa, J. / Fantoni, A. / Barata, M. A. et al. | 2010
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Optical demultiplexer based on an a-SiC:H voltage controlled deviceLouro, P. / Vieira, M. / Fernandes, M. / Costa, J. / Vieira, M. A. / Caeiro, J. / Neves, N. / Barata, M. et al. | 2010
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Variation of Raman spectra of CdSe/ZnS quantum dots at the bioconjugationMacotela, L. G. / Torchynska, T. V. / Douda, J. / Sierra, R. P. et al. | 2010
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Metal-dielectric nanostructures for amplified Raman and fluorescence spectroscopyVirga, A. / Gazia, R. / Pallavidino, L. / Mandracci, P. / Descrovi, E. / Chiodoni, A. / Geobaldo, F. / Giorgis, F. et al. | 2010
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Preparation of NaSi thin films for the guest free Si clathrate thin films by heat resistance apparatus using NaSi target materialsNarita, T. / Ueno, H. / Baba, T. / Kume, T. / Ban, T. / Iida, T. / Habuchi, H. / Natsuhara, H. / Nonomura, S. et al. | 2010
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GaSb film growth by liquid phase epitaxyGarcia-Cruz, M. L. / Martinez-Juarez, J. / Lopez-Salazar, P. / Diaz, G. J. et al. | 2010
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Study of phase change memory cell with inserting buffer layerWu, L. / Zhou, X. / Song, Z. / Liu, Y. / Ni, H. / Gong, Y. / Rao, F. / Yao, D. / Liu, B. / Song, S. et al. | 2010
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Catalytic activity of gold on nanocrystalline diamond supportVeres, M. / Perevedentseva, E. / Karmenyan, A. V. / Toth, S. / Koos, M. et al. | 2010
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Carbon nanotube based sensors and fluctuation enhanced sensingKukovecz, A. / Molnar, D. / Kordas, K. / Gingl, Z. / Moilanen, H. / Mingesz, R. / Konya, Z. / Maklin, J. / Halonen, N. / Toth, G. et al. | 2010
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Preparation of carbon nanotubes with different morphology by microwave plasma enhanced chemical vapour depositionDuraia, E. S. / Mansurov, Z. / Tokmoldin, S. Z. et al. | 2010
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Characterizations of SWNT films to obtain organic optoelectronic device anodesBanoukepa, G. d. / Antony, R. / Colas, M. / Ratier, B. et al. | 2010
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Synthesis of carbon nanotubes using screen-printing catalyst and its application for a field emission deviceChiang, W. T. / Su, S. H. / Wu, C. Y. / Yokoyama, M. et al. | 2010
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Production of high quality carbon nanotubes for less than $1 per gramSmajda, R. / Mionic, M. / Duchamp, M. / Andresen, J. C. / Forro, L. / Magrez, A. et al. | 2010
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Crystallographic orientation dependent etching of graphene layersNemes-Incze, P. / Magda, G. / Kamaras, K. / Biro, L. P. et al. | 2010
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Lack of universal conductance features in disordered graphene nanoribbonsMagna, A. L. / Deretzis, I. / Forte, G. / Pucci, R. et al. | 2010
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Optical, morphological and spectro- scopic characterization of graphene on SiO2Giannazzo, F. / Sonde, S. / Raineri, V. / Patane, G. / Compagnini, G. / Aliotta, F. / Ponterio, R. / Rimini, E. et al. | 2010
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Ion irradiation of multi-walled boron nitride nanotubesLehtinen, O. / Nikitin, T. / Krasheninnikov, A. V. / Sun, L. / Khriachtchev, L. / Banhart, F. / Terao, T. / Golberg, D. / Keinonen, J. et al. | 2010
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Attenuation of electromagnetic radia- tion by graphite-epoxy compositesVovchenko, L. / Matzui, L. / Oliynyk, V. / Launetz, V. et al. | 2010
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Magnetic properties of cobalt-carbon nanocompositesMatsui, D. / Prylutskyy, Y. / Matzui, L. / Zakharenko, M. / Le Normand, F. / Derory, A. et al. | 2010
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Carbon nanostructures from Fe-C nanocomposites by activated CVD methodsFleaca, C. / Morjan, I. / Alexandrescu, R. / Dumitrache, F. / Soare, I. / Gavrila-Florescu, L. / Normand, F. L. / Faerber, J. et al. | 2010
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Effect of iron nanoparticle geometry on the energetics of carbon interstititalsTolvanen, A. / Krasheninnikov, A. V. / Kuronen, A. / Nordlund, K. et al. | 2010
- NA
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Back Cover: Phys. Status Solidi C 7/3-4| 2010
- NA
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Cover Picture: Phys. Status Solidi C 7/3-4| 2010