Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique (Englisch)
- Neue Suche nach: Song, H.
- Neue Suche nach: Kim, J.S.
- Neue Suche nach: Kim, E.K.
- Neue Suche nach: Seo, Y.G.
- Neue Suche nach: Hwang, S.-M.
- Neue Suche nach: Song, H.
- Neue Suche nach: Kim, J.S.
- Neue Suche nach: Kim, E.K.
- Neue Suche nach: Seo, Y.G.
- Neue Suche nach: Hwang, S.-M.
- Neue Suche nach: Goodnick, S.
- Neue Suche nach: Korkin, A.
- Neue Suche nach: Krstic, P.
- Neue Suche nach: Mascher, P.
- Neue Suche nach: Preston, J.
- Neue Suche nach: Zaslavsky, A.
In:
SEMICONDUCTOR NANOTECHNOLOGY: NOVEL MATERIALS AND DEVICES FOR ELECTRONICS, PHOTONICS AND RENEWABLE ENERGY APPLICATIONS
13
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134026
;
2010
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique
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Beteiligte:Song, H. ( Autor:in ) / Kim, J.S. ( Autor:in ) / Kim, E.K. ( Autor:in ) / Seo, Y.G. ( Autor:in ) / Hwang, S.-M. ( Autor:in ) / Goodnick, S. / Korkin, A. / Krstic, P. / Mascher, P. / Preston, J.
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Erschienen in:SEMICONDUCTOR NANOTECHNOLOGY: NOVEL MATERIALS AND DEVICES FOR ELECTRONICS, PHOTONICS AND RENEWABLE ENERGY APPLICATIONS , 13 ; 134026NANOTECHNOLOGY ; 21, 13 ; 134026
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Verlag:
- Neue Suche nach: Institute of Physics
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Erscheinungsdatum:01.01.2010
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Format / Umfang:134026 pages
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ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 530 / 621.3
- Weitere Informationen zu Dewey Decimal Classification
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Klassifikation:
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