Purifying Mechanism in the Acheson Process - A Thermodynamic Study (Englisch)
- Neue Suche nach: Zhou, L.Y.
- Neue Suche nach: Telle, R.
- Neue Suche nach: Zhou, L.Y.
- Neue Suche nach: Telle, R.
- Neue Suche nach: Bauer, A.J.
- Neue Suche nach: Friedrichs, P.
- Neue Suche nach: Krieger, M.
- Neue Suche nach: Pensl, G.
- Neue Suche nach: Rupp, R.
- Neue Suche nach: Seyller, T.
In:
Silicon Carbide and Related Materials 2009
;
41-44
;
2010
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Purifying Mechanism in the Acheson Process - A Thermodynamic Study
-
Beteiligte:Zhou, L.Y. ( Autor:in ) / Telle, R. ( Autor:in ) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R. / Seyller, T.
-
Erschienen in:MATERIALS SCIENCE FORUM ; 645/648 ; 41-44
-
Verlag:
- Neue Suche nach: Transtec Publications
-
Erscheinungsdatum:01.01.2010
-
Format / Umfang:4 pages
-
ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 620.11
- Weitere Informationen zu Dewey Decimal Classification
-
Klassifikation:
DDC: 620.11 -
Datenquelle:
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Inhaltsverzeichnis – Band 645/648
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- -2
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Preface| 2010
- 3
-
High Quality 100mm 4H-SiC Substrates with Low Resistivity| 2010
- -4
-
Committees| 2010
- -5
-
Sponsors| 2010
- 9
-
Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality| 2010
- 13
-
High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt| 2010
- 17
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Growth of 4H-SiC Crystals on the 8^o Off-Axis 6H-SiC Seed by PVT MethodTymicki, E. / Grasza, K. / Racka-Dzietko, K. / Raczkiewicz, M. / Lukasiewicz, T. / Gala, M. / Kosciewicz, K. / Diduszko, R. / Bozek, R. et al. | 2010
- 17
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Growth of 4H-SiC Crystals on the 8° Off-Axis 6H-SiC Seed by PVT Method| 2010
- 21
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Characterization of Vanadium Doped 4H- and 6H-SiC Grown by PVT Method Using the Open Seed Backside| 2010
- 25
-
Status of 3" 6H SiC Bulk Crystal Growth| 2010
- 29
-
Observation of Lattice Plane Bending during SiC PVT Bulk Growth Using In Situ High Energy X-Ray Diffraction| 2010
- 33
-
Solution Growth and Crystallinity Characterization of Bulk 6H-SiC| 2010
- 37
-
Non-Polar SiC Crystal Growth with m-Plane(1-100) and a-Plane(11-20) by PVT Method| 2010
- 41
-
Purifying Mechanism in the Acheson Process - A Thermodynamic Study| 2010
- 45
-
Growth of Single-Phase 2H-SiC Layers by Vapor–Liquid–Solid Process| 2010
- 49
-
Overview of 3C-SiC Crystalline Growth| 2010
- 55
-
Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique| 2010
- 59
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Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts| 2010
- 63
-
Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals| 2010
- 67
-
Is the Liquid Phase a Viable Approach for Bulk Growth of 3C-SiC?| 2010
- 71
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The Effect of Phenol Resin Types and Mixing Ratios on the Synthesis of High-Purity beta -SiC Powder by the Sol-Gel MethodByeun, Y.K. / Telle, R. / Han, K.S. / Park, S.W. et al. | 2010
- 71
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The Effect of Phenol Resin Types and Mixing Ratios on the Synthesis of High-Purity β-SiC Powder by the Sol-Gel Method| 2010
- 77
-
Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers| 2010
- 83
-
Growth and Properties of SiC On-Axis Homoepitaxial Layers| 2010
- 89
-
High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor| 2010
- 95
-
Concentrated Chloride-Based Epitaxial Growth of 4H-SiC| 2010
- 99
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4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate| 2010
- 103
-
Epitaxial Growth of 4H-SiC with High Growth Rate Using CH3Cl and SiCl4 Chlorinated Growth Precursors| 2010
- 107
-
Chloride-Based CVD at High Growth Rates on 3” Vicinal Off-Angles SiC Wafers| 2010
- 111
-
Use of SiCl4 as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC| 2010
- 115
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Short-Length Step Morphology on 4° Off Si-Face Epitaxial Surface Grown on 4H-SiC Substrate| 2010
- 115
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Short-Length Step Morphology on 4^o Off Si-Face Epitaxial Surface Grown on 4H-SiC SubstrateMomose, K. / Odawara, M. / Tajima, Y. / Koizumi, H. / Muto, D. / Sato, T. et al. | 2010
- 119
-
Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4^o Off-Axis SubstratesAigo, T. / Tsuge, H. / Yashiro, H. / Fujimoto, T. / Katsuno, M. / Nakabayashi, M. / Hoshino, T. / Ohashi, W. et al. | 2010
- 119
-
Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4° Off-Axis Substrates| 2010
- 123
-
Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth| 2010
- 127
-
Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature| 2010
- 131
-
The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode| 2010
- 135
-
3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)| 2010
- 139
-
SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide| 2010
- 143
-
Growth Rate Effect on 3C-SiC Film Residual Stress on (100) Si Substrates| 2010
- 147
-
Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane| 2010
- 151
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Fundamental Study of the Temperature Ramp-Up Influence for 3C-SiC Hetero-Epitaxy on Silicon (100)| 2010
- 155
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Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates| 2010
- 159
-
Tuning Residual Stress in 3C-SiC(100) on Si(100)| 2010
- 163
-
Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase| 2010
- 167
-
Bow in 6 Inch High-Quality Off-Axis (111) 3C-SiC Films| 2010
- 171
-
Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates| 2010
- 175
-
Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds| 2010
- 179
-
Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy| 2010
- 183
-
Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates| 2010
- 187
-
SiC Nanowires Grown on 4H-SiC Substrates by Chemical Vapor Deposition| 2010
- 193
-
Identification of Defects Limiting the Carrier Lifetime in n- Epitaxial Layers of 4H-SiC| 2010
- 199
-
Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers| 2010
- 203
-
Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers| 2010
- 207
-
Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method| 2010
- 211
-
CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers| 2010
- 215
-
Nonequilibrium Carrier Recombination in Highly Excited Bulk SiC Crystals| 2010
- 219
-
On the Correlation of the Structural Perfection and Nonequilibrium Carrier Parameters in 3C SiC Heterostructures| 2010
- 223
-
Increase of SiC Substrate Resistance Induced by Annealing| 2010
- 227
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Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC| 2010
- 231
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Fundamental Band Edge Absorption in 3C-SiC: Phonon Absorption Assisted Transitions| 2010
- 235
-
Electronic Structure and Momentum-Dependent Resonant Inelastic X-Ray Scattering in Broad Band Materials| 2010
- 239
-
Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide| 2010
- 243
-
Modeling of Boron Diffusion and Segregation in Poly-Si/4H-SiC Structures| 2010
- 247
-
Calculation of Lattice Constant of 4H-SiC as a Function of Impurity Concentration| 2010
- 251
-
Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction| 2010
- 255
-
Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios| 2010
- 259
-
Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures| 2010
- 263
-
Determination of the Optical Bandgap of Thin Amorphous (SiC)1-x(AlN)x Films| 2010
- 267
-
Elastic Properties of Dense Organosilicate Glasses Dependent on the C/Si Ratio| 2010
- 271
-
A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy| 2010
- 277
-
On the Luminescence and Driving Force of Stacking Faults in 4H-SiC| 2010
- 283
-
Systematic First Principles Calculations of the Effects of Stacking Fault Defects on the 4H-SiC Band Structure| 2010
- 287
-
In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate| 2010
- 291
-
Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density| 2010
- 295
-
Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy| 2010
- 299
-
Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC| 2010
- 303
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Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers| 2010
- 307
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Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers| 2010
- 311
-
Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates| 2010
- 315
-
Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy| 2010
- 315
-
Structure of Inclusions in 4^o Offcut 4H-SiC EpitaxyMahadik, N.A. / Stahlbush, R.E. / Qadri, S.B. / Glembocki, O.J. / Alexson, D.A. / Myers-Ward, R.L. / Tedesco, J.L. / Eddy, C.R. / Gaskill, D.K. et al. | 2010
- 319
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Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers| 2010
- 323
-
Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process| 2010
- 327
-
Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers| 2010
- 331
-
Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes| 2010
- 335
-
Dislocation Activity in 4H-SiC in the Brittle Domain| 2010
- 339
-
Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC| 2010
- 343
-
Temperature-Dependence of the Leakage Current of 3C-SiC p+-n Diodes Caused by Extended Defects| 2010
- 347
-
6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers| 2010
- 351
-
Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer| 2010
- 355
-
Room-Temperature Photoluminescence Observation of Stacking Faults in 3C-SiC| 2010
- 359
-
Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates| 2010
- 363
-
Stacking Faults around the Hetero-Interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth| 2010
- 367
-
The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy| 2010
- 371
-
A Study of Structural Defects in 3C-SiC Hetero-Epitaxial Films| 2010
- 375
-
Macrodefects in Cubic Silicon Carbide Crystals| 2010
- 379
-
Microstructural Characterization of Epitaxial Cubic Silicon Carbide Using Transmission Electron Microscopy| 2010
- 383
-
TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds| 2010
- 387
-
TEM and SEM-CL Studies of SiC Nanowires| 2010
- 391
-
Characteristics of Porous 3C-SiC Thin Films Formed with Nitrogen Doping Concentrations| 2010
- 395
-
Theory of Neutral Divacancy in SiC: A Defect for Spintronics| 2010
- 399
-
The Carbon Vacancy Related EI4 Defect in 4H-SiC| 2010
- 403
-
Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC| 2010
- 407
-
The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron Irradiation| 2010
- 411
-
New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and 4He Ion Irradiated 4H SiC| 2010
- 415
-
LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates| 2010
- 419
-
Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons| 2010
- 423
-
Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons| 2010
- 427
-
Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers| 2010
- 431
-
A Laterally Resolved DLTS Study of Intrinsic Defect Diffusion in 4H-SiC after Low Energy Focused Proton Beam Irradiation| 2010
- 435
-
Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC| 2010
- 439
-
Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons| 2010
- 443
-
Optical Characterization of VLS+CVD Grown 3C-SiC Films by Non-Linear and Photoluminescence Techniques| 2010
- 447
-
Elastic Waves in Nano-Columnar Porous 4H-SiC Measured by Brillouin Scattering| 2010
- 451
-
Breakdown of Impurity Al in SiC Polytypes| 2010
- 455
-
Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC| 2010
- 459
-
Thermal Activation and Cathodoluminescence Measurements of Tb3+-Doped a-(SiC)1-x(AlN)x Thin Films| 2010
- 463
-
Detection and Electrical Characterization of Defects at the SiO2/4H-SiC Interface| 2010
- 469
-
Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation| 2010
- 473
-
SiC and GaN MOS Interfaces – Similarities and Differences| 2010
- 479
-
Multiscale Modeling and Analysis of the Nitridation Effect of SiC/SiO2 Interface| 2010
- 483
-
Dynamical Simulations of Dry Oxidation and NO Annealing of SiO2/4H-SiC Interface on C-Face at 1500K: From First Principles| 2010
- 487
-
Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs| 2010
- 491
-
Nitridation of the SiO2/SiC Interface by N+ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs| 2010
- 495
-
Systematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted Substrates| 2010
- 499
-
Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States| 2010
- 503
-
Significant Decrease of the Interface State Density by NH3 Plasma Pretreatment at 4H-SiC (000-1) Surface and its Bond Configuration| 2010
- 507
-
Improved Electrical Properties of SiC-MOS Interfaces by Thermal Oxidation of Plasma Nitrided 4H-SiC(0001) Surfaces| 2010
- 511
-
Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide| 2010
- 515
-
Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide| 2010
- 519
-
Experimental Identification of Extra Type of Charges at SiO2/SiC Interface in 4H-SiC| 2010
- 523
-
A C-V Method of Slow-Switching Interface Traps Identification in Silicon Carbide MOS Structures| 2010
- 527
-
EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors| 2010
- 531
-
Electrical Properties and Gas Sensing Characteristics of the Al2O3/4H SiC Interface Studied by Impedance Spectroscopy| 2010
- 535
-
Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)| 2010
- 539
-
Study of the Evolution of Basal Plane Dislocations during Epitaxial Growth: Role of the Surface Kinetics| 2010
- 543
-
Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces| 2010
- 547
-
Modal Composition of the SiC Surface Electromagnetic Response to the External Radiation at Lattice Resonant Frequency| 2010
- 551
-
Study of Indentation Damage in Single Crystal Silicon Carbide by Using Micro Raman Spectroscopy| 2010
- 555
-
Single Shockley Faults Enlargement during Micro-Photoluminescence Defects Mapping| 2010
- 559
-
Characterization of Defects in Semi-Insulating 6H-SiC Substrates Using IR Thermal Imaging Camera| 2010
- 565
-
Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates| 2010
- 569
-
Growth Rate and Thickness Uniformity of Epitaxial Graphene| 2010
- 573
-
Structural Evaluation of Graphene/SiC (0001) Grown in Atmospheric Pressure| 2010
- 577
-
Graphene Growth on C and Si-Face of 4H-SiC – TEM and AFM Studies| 2010
- 581
-
Differences between Graphene Grown on Si-Face and C-Face| 2010
- 585
-
Epitaxial Graphene Elaborated on 3C-SiC(111)/Si Epilayers| 2010
- 589
-
Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon| 2010
- 593
-
Growth and Characterization of Epitaxial Graphene on SiC Induced by Carbon Evaporation| 2010
- 597
-
Epitaxial Graphene Growth Studied by Low-Energy Electron Microscopy and First-Principles| 2010
- 603
-
Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy| 2010
- 607
-
Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping| 2010
- 611
-
Deep UV Raman Spectroscopy of Epitaxial Graphenes on Vicinal 6H-SiC Substrates| 2010
- 615
-
Optical Transmission of Epitaxial Graphene Layers on SiC in the Visible Spectral Range| 2010
- 619
-
Density Functional Simulations of Physisorbed and Chemisorbed Single Graphene Layers on 4H-SiC (0001), (000-1) and 4H-SiC:H Surface| 2010
- 623
-
Hydrogen Intercalation below Epitaxial Graphene on SiC(0001)| 2010
- 629
-
Quasi-Freestanding Graphene on SiC(0001)| 2010
- 633
-
Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates| 2010
- 637
-
Transport Properties of Single-Layer Epitaxial Graphene on 6H-SiC (0001)| 2010
- 645
-
Defect Control in Growth and Processing of 4H-SiC for Power Device Applications| 2010
- 651
-
Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-Type and p-Type 4H-SiC| 2010
- 655
-
Influence of Processing and of Material Defects on the Electrical Characteristics of SiC-SBDs and SiC-MOSFETs| 2010
- 661
-
Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs| 2010
- 665
-
Novel Fabrication Technology for Devices with nearly Temperature-Independent Forward Characteristics| 2010
- 669
-
Correlation between Schottky Contact Characteristics and Regions with a Low Barrier Height Revealed by the Electrochemical Deposition on 4H-SiC| 2010
- 673
-
Investigations on Surge Current Capability of SiC Schottky Diodes by Implementation of New Pad Metallizations| 2010
- 677
-
On the Viability of Au/3C-SiC Schottky Barrier Diodes| 2010
- 681
-
Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides| 2010
- 685
-
Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing| 2010
- 689
-
Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures| 2010
- 693
-
The Limits of Post Oxidation Annealing in NO| 2010
- 697
-
Electrical Activation of B+-Ions Implanted into 4H-SiC| 2010
- 701
-
Manganese in 4H-SiC| 2010
- 705
-
Effects of Implantation Temperature on Sheet and Contact Resistance of Heavily Al Implanted 4H-SiC| 2010
- 709
-
Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors| 2010
- 713
-
Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC| 2010
- 717
-
Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples| 2010
- 721
-
Effects of Helium Implantation on the Mechanical Properties of 4H-SiC| 2010
- 725
-
Novel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma Ashing| 2010
- 729
-
TEM Observations of Ti/AlNi/Au Contacts on p-Type 4H-SiC| 2010
- 733
-
Comparative Study of Ohmic Contact Metallizations to Nanocrystalline Diamond Films| 2010
- 737
-
Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers| 2010
- 741
-
SiC-Die-Attachment for High Temperature Applications| 2010
- 745
-
Characteristics of Gold Wire Bonds with Ti- and Ni-Based Contact Metallization to n-SiC for High Temperature Applications| 2010
- 749
-
Development of a Wire-Bond Technology for SiC High Temperature Applications| 2010
- 753
-
Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials| 2010
- 759
-
Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC| 2010
- 763
-
Morphology Improvement of Step Bunching on 4H-SiC Wafers by Polishing Technique| 2010
- 767
-
Fabrication and Use of Atomically Smooth Steps on 6H-SiC for Calibration of z-Displacements in Scanning Probe Microscopy| 2010
- 771
-
Hexagonality and Stacking Sequence Dependence of Etching Properties in Cl2-O2-SiC System| 2010
- 775
-
Reduction of Surface Roughness of 4H-SiC by Catalyst-Referred Etching| 2010
- 779
-
Self-Formation of Specific Pyramidal Planes in 4H-SiC Formed by Chlorine Based Ambience| 2010
- 783
-
Impact of CF4 Plasma Treatment on the Surface Roughness of Ion Implanted SiC Induced by High Temperature Annealing| 2010
- 787
-
4H-SiC Surface Morphology Etched Using ClF3 Gas| 2010
- 791
-
Influence of Negative Charging on High Rate SiC Etching for GaN HEMT MMICs| 2010
- 795
-
Influence of the UV Light Intensity on the Photoelectrochemical Planarization Technique for Gallium Nitride| 2010
- 799
-
Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC| 2010
- 805
-
Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices| 2010
- 809
-
Model Calculations of SiC Oxide Growth Rate at Various Oxidation Temperatures Based on the Silicon and Carbon Emission Model| 2010
- 813
-
In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures| 2010
- 817
-
Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps| 2010
- 821
-
Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy| 2010
- 825
-
Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices| 2010
- 829
-
Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC| 2010
- 833
-
Reliability of Thin Thermally Grown SiO2 on 3C-SiC Studied by Scanning Probe Microscopy| 2010
- 837
-
Effects of Post-Deposition Annealing on CeO2 Gate Prepared by Metal-Organic Decomposition (MOD) Method on 4H-SiC| 2010
- 841
-
Nanostructuring Techniques for 3C-SiC(100) NEMS Structures| 2010
- 845
-
SiC on SOI Resonators: A Route for Electrically Driven MEMS in Harsh Environment| 2010
- 849
-
Temperature Facilitated ECR-Etching for Isotropic SiC Structuring| 2010
- 853
-
Ultra-Precision Machining of Stainless Steel and Nickel with Single Crystal 4H and 6H Boule SiC| 2010
- 857
-
Thinning of SiC Wafer by Plasma Chemical Vaporization Machining| 2010
- 861
-
Property Modification of 3C-SiC MEMS on Ge-Modified Si(100) Substrates| 2010
- 865
-
Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers| 2010
- 869
-
Electric Discharge Machining for Silicon Carbide in Gases of Ar, Ar-CH4 and Ar-CF4 Mixtures| 2010
- 873
-
Effect of In Situ Doped Nitrogen Concentrations on the Characteristics of Poly 3C-SiC Micro Resonators| 2010
- 879
-
Active Devices for Power Electronics: SiC vs III-N Compounds – The Case of Schottky Rectifiers| 2010
- 885
-
A New Generation of SiC Schottky Diodes with Improved Thermal Management and Reduced Capacitive Losses| 2010
- 889
-
Germanium – Silicon Carbide Heterojunction Diodes – A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature| 2010
- 893
-
Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height| 2010
- 897
-
4.6 kV, 10.5 mOhm×cm2 Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers| 2010
- 897
-
4.6 kV, 10.5 mOhmxcm^2 Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial WafersVassilevski, K. / Nikitina, I.P. / Horsfall, A.B. / Wright, N.G. / Johnson, C.M. et al. | 2010
- 901
-
6.5 kV SiC PiN Diodes with Improved Forward Characteristics| 2010
- 905
-
Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes| 2010
- 909
-
Optimization of Bipolar SiC-Diodes by Analysis of Avalanche Breakdown Performance| 2010
- 913
-
Analyses of High Leakage Currents in Al+ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations| 2010
- 917
-
Preliminary Investigation of Laser Induced Photoconductivity in 4H-SiC PiN Diodes and HPSI Substrate| 2010
- 921
-
Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation| 2010
- 925
-
4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method| 2010
- 929
-
Feasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and Simulations| 2010
- 933
-
Fast Switching with SiC VJFETs - Influence of the Device Topology| 2010
- 937
-
Performance of 15 mm2 1200 V Normally-Off SiC VJFETs with 120 A Saturation Current| 2010
- 941
-
Radiation Hardness Evaluation of SiC-BGSIT| 2010
- 945
-
Physics of Hysteresis in MESFET Drain I-V Characteristics: Simulation Approach| 2010
- 949
-
Characterization of SiC JFETs and its Application in Extreme Temperature (over 450°C) Circuit Design| 2010
- 949
-
Characterization of SiC JFETs and its Application in Extreme Temperature (over 450^oC) Circuit DesignYang, J. / Fraley, J. / Western, B. / Schupbach, M. / Lostetter, A. et al. | 2010
- 953
-
Amplitude Shift Keyed Radio Communications for Hostile Environments| 2010
- 957
-
Minimization of Drain-to-Gate Interaction in a SiC JFET Inverter Using an External Gate-Source Capacitor| 2010
- 961
-
Design and Gate Drive Considerations for Epitaxial 1.2 kV Buried Grid N-on and N-off JFETs for Operation at 250°C| 2010
- 961
-
Design and Gate Drive Considerations for Epitaxial 1.2 kV Buried Grid N-on and N-off JFETs for Operation at 250^oCLim, J.K. / Bakowski, M. / Nee, H.P. et al. | 2010
- 965
-
Circuit Modeling of Vertical Buried-Grid SiC JFETs| 2010
- 969
-
Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs| 2010
- 975
-
Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs| 2010
- 979
-
Wafer-Level Hall Measurement on SiC MOSFET| 2010
- 983
-
Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics| 2010
- 987
-
1360 V, 5.0 m Omega cm^2 Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)Kono, H. / Suzuki, T. / Mizukami, M. / Ota, C. / Harada, S. / Senzaki, J. / Fukuda, K. / Shinohe, T. et al. | 2010
- 987
-
1360 V, 5.0 mΩcm2 Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)| 2010
- 991
-
Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO2 Stacked Gate Dielectrics| 2010
- 995
-
Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices| 2010
- 999
-
Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle| 2010
- 1005
-
Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETs| 2010
- 1009
-
Electrical Characteristics of MOSFETs Using 3C-SiC with Buried Insulating Layer| 2010
- 1013
-
Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation| 2010
- 1017
-
9 kV, 1 cm2 SiC Gate Turn-Off Thyristors| 2010
- 1021
-
Large Area >8 kV SiC GTO Thyristors with Innovative Anode-Gate Designs| 2010
- 1025
-
10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC| 2010
- 1029
-
SiC Heterojunction Bipolar Transistors with AlN/GaN Short-Period Superlattice Widegap Emitter| 2010
- 1033
-
2.2 kV SiC BJTs with Low VCESAT Fast Switching and Short-Circuit Capability| 2010
- 1037
-
Experimental Study of Degradation in 4H-SiC BJTs by Means of Electrical Characterization and Electroluminescence| 2010
- 1041
-
Optical Insights into the Internal Electronic and Thermal Behavior of 4H-SiC Bipolar Devices| 2010
- 1045
-
A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed| 2010