A Drain-Extended MOS Device With Spreading Filament Under ESD Stress (Englisch)
- Neue Suche nach: Shrivastava, M.
- Neue Suche nach: Gossner, H.
- Neue Suche nach: Russ, C.
- Neue Suche nach: Shrivastava, M.
- Neue Suche nach: Gossner, H.
- Neue Suche nach: Russ, C.
In:
IEEE ELECTRON DEVICE LETTERS
;
33
, 9
;
1294-1296
;
2012
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:A Drain-Extended MOS Device With Spreading Filament Under ESD Stress
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Beteiligte:
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Erschienen in:IEEE ELECTRON DEVICE LETTERS ; 33, 9 ; 1294-1296
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Verlag:
- Neue Suche nach: IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS
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Erscheinungsdatum:01.01.2012
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Format / Umfang:3 pages
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ISSN:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 621.3815
- Weitere Informationen zu Dewey Decimal Classification
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Klassifikation:
DDC: 621.3815 -
Datenquelle:
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