Characterization analysis and gate driver design for 1200 V 10 A SiC MOSFET (Englisch)
- Neue Suche nach: Zhai, M.
- Neue Suche nach: Yang, Y.
- Neue Suche nach: Wen, Y.
- Neue Suche nach: Yao, W.
- Neue Suche nach: Li, Y.
- Neue Suche nach: Zhai, M.
- Neue Suche nach: Yang, Y.
- Neue Suche nach: Wen, Y.
- Neue Suche nach: Yao, W.
- Neue Suche nach: Li, Y.
In:
Modern physics letters.B, Condensed matter physics, statistical physics, applied physics
;
32
, 34/36
;
1840080-1840080
;
2018
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Characterization analysis and gate driver design for 1200 V 10 A SiC MOSFET
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Beteiligte:
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Erschienen in:Modern physics letters.B, Condensed matter physics, statistical physics, applied physics ; 32, 34/36 ; 1840080-1840080
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Verlag:
- Neue Suche nach: WORLD SCIENTIFIC
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Erscheinungsdatum:01.01.2018
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Format / Umfang:1 pages
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ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 530
- Weitere Informationen zu Dewey Decimal Classification
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Klassifikation:
DDC: 530 -
Datenquelle:
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