IEEE Transactions on Electron Devices publication information (Englisch)
In:
IEEE transactions on electron devices
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66
, 5
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C2-C2
;
2019
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:IEEE Transactions on Electron Devices publication information
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Erschienen in:IEEE transactions on electron devices ; 66, 5 ; C2-C2
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Verlag:
- Neue Suche nach: IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS
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Erscheinungsdatum:01.01.2019
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Format / Umfang:C2-C2
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ISSN:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 621.381
- Weitere Informationen zu Dewey Decimal Classification
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Klassifikation:
DDC: 621.381 -
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Inhaltsverzeichnis – Band 66, Ausgabe 5
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 2056
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Changes in the Editorial BoardGhione, Giovanni et al. | 2019
- 2062
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An Enhanced MLSCR Structure Suitable for ESD Protection in Advanced Epitaxial CMOS TechnologyDu, Feibo / Hou, Fei / Song, Wenqiang / Chen, Ruibo / Liu, Jizhi / Liu, Zhiwei / Liou, Juin J. et al. | 2019
- 2068
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Highly Scaled Strained Silicon-On-Insulator Technology for the 5G Era: Impact of Geometry and Annealing on Strain Retention and Device Performance of nMOSFETsKong, Eugene Y.-J. / Yadav, Sachin / Lei, Dian / Kang, Yuye / Sivan, Maheswari / Li, Yida / Nguyen, Bich-Yen / Schwarzenbach, Walter / Ecarnot, Ludovic / Sellier, Manuel et al. | 2019
- 2075
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Reliability Modeling and Analysis of Hot-Carrier Degradation in Multiple-Fin SOI n-Channel FinFETs With Self-HeatingGupta, Anshul / Gupta, Charu / Vega, Reinaldo A. / B. Hook, Terence / Dixit, Abhisek et al. | 2019
- 2081
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A Compact Model for Digital Circuits Operating Near Threshold in Deep-Submicrometer MOSFET| 2019
- 2086
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A 3-D TCAD Framework for NBTI—Part I: Implementation Details and FinFET Channel Material ImpactTiwari, Ravi / Parihar, Narendra / Thakor, Karansingh / Wong, Hiu Yung / Motzny, Steve / Choi, Munkang / Moroz, Victor / Mahapatra, Souvik et al. | 2019
- 2093
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A 3-D TCAD Framework for NBTI, Part-II: Impact of Mechanical Strain, Quantum Effects, and FinFET Dimension ScalingTiwari, Ravi / Parihar, Narendra / Thakor, Karansingh / Wong, Hiu Yung / Motzny, Steve / Choi, Munkang / Moroz, Victor / Mahapatra, Souvik et al. | 2019
- 2100
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Measurement of the Variable Surface Charge Concentration in Gallium Nitride and Implications on Device Modeling and PhysicsBer, E. / Osman, B. / Ritter, D. et al. | 2019
- 2106
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Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor With Interdigital Built-in Schottky Barrier DiodeLei, Jiacheng / Wei, Jin / Tang, Gaofei / Qian, Qingkai / Zhang, Zhaofu / Hua, Mengyuan / Zheng, Zheyang / Chen, Kevin J. et al. | 2019
- 2113
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Excess OFF-State Current in InGaAs FinFETs: Physics of the Parasitic Bipolar EffectZhao, Xin / Vardi, Alon / del Alamo, Jesus A. et al. | 2019
- 2119
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Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based TransistorsRuzzarin, Maria / Meneghini, Matteo / de Santi, Carlo / Neviani, Andrea / Yu, Feng / Strempel, Klaas / Fatahilah, Muhammad Fahlesa / Witzigmann, Bernd / Wasisto, Hutomo Suryo / Waag, Andreas et al. | 2019
- 2125
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Scalable Modeling of Thermal Impedance in InP DHBTs Targeting Terahertz ApplicationsMukherjee, Chhandak / Couret, Marine / Nodjiadjim, Virginie / Riet, Muriel / Dupuy, J.-Y. / Fregonese, Sebastien / Zimmer, Thomas / Maneux, Cristell et al. | 2019
- 2132
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Thermal Parameters of Monocrystalline GaN Schottky DiodesGorecki, Pawel / Gorecki, Krzysztof / Kisiel, Ryszard / Mysliwiec, Marcin et al. | 2019
- 2139
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Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental MeasurementsCutivet, A. / Pavlidis, G. / Hassan, B. / Bouchilaoun, M. / Rodriguez, C. / Soltani, A. / Graham, S. / Boone, F. / Maher, H. et al. | 2019
- 2146
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Simulation of the RF Power Performance of a GaN HFET and Comparison to ExperimentNasser, Caram / Luo, Peng / Schnieder, Frank / Rudolph, Matthias / Ritter, Dan et al. | 2019
- 2151
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Compositionally Graded III-N HEMTs for Improved Linearity: A Simulation StudyAncona, M. G. / Calame, J. P. / Meyer, D. J. / Rajan, S. / Downey, B. P. et al. | 2019
- 2158
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Hardware Security Primitive Exploiting Intrinsic Variability in Analog Behavior of 3-D NAND Flash Memory ArraySahay, Shubham / Klachko, Michael / Strukov, Dmitri et al. | 2019
- 2165
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Investigation of Switching-Induced Local Defects in Oxide-Based CBRAM Using Expanded Analytical Model of TDDBIchihara, Reika / Fujii, Shosuke / Yamaguchi, Marina / Yoshimura, Yoko / Mitani, Yuichiro / Saitoh, Masumi et al. | 2019
- 2172
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Exploring Cycle-to-Cycle and Device-to-Device Variation Tolerance in MLC Storage-Based Neural Network TrainingLee, Jung-Hoon / Lim, Dong-Hyeok / Jeong, Hongsik / Ma, Huimin / Shi, Luping et al. | 2019
- 2179
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Demonstration and Understanding of Nano-RAM Novel One-Time Programmable Memory ApplicationNing, Sheyang / Luo, Jia et al. | 2019
- 2186
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Characterization and Modeling of Co/BaTiO3/SrRuO3 Ferroelectric Tunnel Junction Memory by Capacitance–Voltage ( ${C}$ – ${V}$ ), Current–Voltage ( ${I}$ – ${V}$ ), and High- Frequency MeasurementsAbuwasib, Mohammad / Lee, Hyungwoo / Lee, Jung-woo / Eom, Chang-Beom / Gruverman, Alexei / Singisetti, Uttam et al. | 2019
- 2192
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Temperature-Dependent Low-Frequency Noise in Indium–Zinc–Oxide Thin-Film Transistors Down to 10 KLiu, Yuan / He, Hongyu / Chen, Ya-Yi / Chen, Rongsheng / Wang, Li / Cai, Shuting / Xiong, Xiaoming et al. | 2019
- 2198
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Flexible Transparent InGaZnO Thin-Film Transistors on Muscovite MicaHuo, Wenxing / Mei, Zengxia / Sui, Yanxin / Han, Zuyin / Wang, Tao / Liang, Huili / Du, Xiaolong et al. | 2019
- 2202
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Influence of Humidity on the Performance of Composite Polymer Electrolyte-Gated Field-Effect Transistors and CircuitsCadilha Marques, Gabriel / von Seggern, Falk / Dehm, Simone / Breitung, Ben / Hahn, Horst / Dasgupta, Subho / Tahoori, Mehdi B. / Aghassi-Hagmann, Jasmin et al. | 2019
- 2208
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Bias Temperature Stress Instability of Multilayered MoS2 Field-Effect Transistors With CYTOP PassivationSeo, Seung Gi / Jin, Sung Hun et al. | 2019
- 2214
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Spontaneous Degradation of Flexible Poly-Si TFTs Subject to Dynamic Bending StressJiang, Wei / Wang, Mingxiang / Wang, Huaisheng / Zhang, Dongli et al. | 2019
- 2219
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Impact of Sputtering Power on Amorphous In–Al–Zn–O Films and Thin Film Transistors Prepared by RF Magnetron SputteringXu, Weidong / Xu, Meng / Jiang, Jianfeng / Xu, Sanjin / Feng, Xianjin et al. | 2019
- 2224
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X-Ray Detector Based on All-Inorganic Lead-Free Cs2AgBiBr6 Perovskite Single CrystalZhang, Hainan / Gao, Ziyan / Liang, Renrong / Zheng, Xinran / Geng, Xiangshun / Zhao, Yunfei / Xie, Dan / Hong, Jiawang / Tian, He / Yang, Yi et al. | 2019
- 2230
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A Front-Side Microfabricated Tiny-Size Thermopile Infrared Detector With High Sensitivity and Fast ResponseLi, Wei / Ni, Zao / Wang, Jiachou / Li, Xinxin et al. | 2019
- 2238
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GZO/Si Photodiodes Exhibiting High Photocurrent-to-Dark-Current RatioKoksal, Nur Efsan / Sbeta, Mohamed / Yildiz, Abdullah et al. | 2019
- 2243
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Study on Dislocation Annihilation Mechanism of the High-Quality GaN Grown on Sputtered AlN/PSS and Its Application in Green Light-Emitting DiodesPeng, Ruoshi / Meng, Xijun / Xu, Shengrui / Zhang, Jincheng / Li, Peixian / Huang, Jun / Du, Jinjuan / Zhao, Ying / Fan, Xiaomeng / Hao, Yue et al. | 2019
- 2249
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1T Pixel Sensor Based on FDSOI Transistor Optical Back BiasingKadura, Lina / Grenouillet, Laurent / Rozeau, Olivier / Chelnokov, Alexei / Vinet, Maud et al. | 2019
- 2256
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Investigation of Bandgap Engineering of Gallium Zinc Oxide-Based Ultraviolet Photodetector by Mist Atmospheric Pressure Chemical Vapor DepositionLiu, Han-Yin / Liu, Guan-Jyun et al. | 2019
- 2263
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The Impact of Luminous Properties of Red, Green, and Blue Mini-LEDs on the Color GamutGuo, Weijie / Chen, Nan / Lu, Hao / Su, Changwen / Lin, Yue / Chen, Guolong / Lu, Yijun / Zheng, Lili / Peng, Zhangbao / Kuo, Hao-Chung et al. | 2019
- 2269
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A Proposal for an Electrostatic Doping-Assisted Electroabsorption Modulator for Intrachip CommunicationPal, Subhradeep / Tiwari, Pramod Kumar / Gupta, Sumanta et al. | 2019
- 2276
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Carrier Transport and Gain Mechanisms in $\beta$ –Ga2O3-Based Metal–Semiconductor–Metal Solar-Blind Schottky PhotodetectorsXu, Yang / Chen, Xuanhu / Zhou, Dong / Ren, Fangfang / Zhou, Jianjun / Bai, Song / Lu, Hai / Gu, Shulin / Zhang, Rong / Zheng, Youdou et al. | 2019
- 2282
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Analysis of Optical and Electrical Responses of $\boldsymbol{\mu}$ -OLED With Metallized ITO Coplanar Waveguide Electrodes Submitted to Nanosecond Electrical PulsesChime, A. C. / Fischer, A. P. A. / Bensmida, S. / Solard, J. / Chakaroun, M. / Nkwawo, H. et al. | 2019
- 2290
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Thin-Film Luminescent Solar Concentrators Using Inorganic PhosphorsYing, Shang-Ping / Chen, Bing-Mau / Tseng, Wei-Lun et al. | 2019
- 2295
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Investigations of SiC VDMOSFET With Floating Island Structure Based on TCADLuo, Hou-Cai / Wang, Li-Ming / Wang, Shao-Gang / Tan, Chun-Jian / Zheng, Kai / Zhang, Guo-Qi / Tao, Lu-Qi / Chen, Xian-Ping et al. | 2019
- 2301
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Bonding Pad Over Active Area Layout for Lateral AlGaN/GaN Power HEMTs: A Critical ViewEfthymiou, Loizos / Longobardi, Giorgia / Camuso, Gianluca / Udrea, Florin et al. | 2019
- 2307
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An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching LossTian, Kai / Hallen, Anders / Qi, Jinwei / Ma, Shenhui / Fei, Xinxing / Zhang, Anping / Liu, Weihua et al. | 2019
- 2314
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A 600-V Super-Junction pLDMOS Utilizing Electron Current to Enhance Current CapabilityYi, Bo / Kong, Moufu / Lin, Jia / Cheng, Junji / Huang, Haimeng / Chen, Xingbi et al. | 2019
- 2321
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Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental ResultsHan, Kijeong / Baliga, B. J. et al. | 2019
- 2327
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Novel Superjunction LDMOS With a High-K Dielectric Trench by TCAD Simulation StudyCao, Zhen / Duan, Baoxing / Song, Haitao / Xie, Fengyun / Yang, Yintang et al. | 2019
- 2333
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A Simulation Study of a Novel Superjunction MOSFET Embedded With an Ultrasoft Reverse-Recovery Body DiodeLin, Zhi / Yuan, Qi / Hu, Shengdong / Zhou, Xichuan / Zhou, Jianlin / Tang, Fang et al. | 2019
- 2339
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RC Benefits of Advanced Metallization OptionsCiofi, Ivan / Roussel, Philippe J. / Baert, Rogier / Contino, Antonino / Gupta, Anshul / Croes, Kristof / Wilson, Christopher J. / Mocuta, Dan / Tokei, Zsolt et al. | 2019
- 2346
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Investigation of Pt-Salt-Doped-Standalone- Multiwall Carbon Nanotubes for On-Chip Interconnect ApplicationsLiang, Jie / Chen, Rongmei / Ramos, Raphael / Lee, Jaehyun / Okuno, Hanako / Kalita, Dipankar / Georgiev, Vihar / Berrada, Salim / Sadi, Toufik / Uhlig, Benjamin et al. | 2019
- 2353
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A New Physical Understanding of Lateral Step Doping Technique via Effective Concentration Profile ConceptZhang, Jun / Guo, Yu-Feng / Pan, David Z. / Hu, Fang-Ren et al. | 2019
- 2359
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Exploring New Metal Electrodes for Ferroelectric Aluminum-Doped Hafnium OxideRyu, Hojoon / Xu, Kai / Kim, Jinhong / Kang, Sangmin / Guo, Ji / Zhu, Wenjuan et al. | 2019
- 2365
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Prediction of Stable and High-Performance Charge Transport in Zigzag Tellurene NanoribbonsLv, Yawei / Liu, Yuan / Qin, Wenjing / Chang, Sheng / Jiang, Changzhong / Liu, Yuanyue / Liao, Lei et al. | 2019
- 2370
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Analysis and Compact Modeling of Gate Capacitance in Organic Thin-Film TransistorsCortes-Ordonez, H. / Jacob, S. / Mohamed, F. / Ghibaudo, G. / Iniguez, B. et al. | 2019
- 2375
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Modeling of Packaged MEMS Thermal Wind Sensor Operating on CP ModeYi, Zhenxiang / Ye, Yizhou / Qin, Ming / Huang, Qing-An et al. | 2019
- 2382
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Beam Test of a Novel CNT Cathode-Based Electron Gun Assembled in a TWTLi, Xinghui / Chen, Bo / Feng, Yuan / Zhang, Yu / Deng, Shaozhi / Feng, Jinjun et al. | 2019
- 2389
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Terahertz Broadband Whispering-Gallery Mode Gyrotron Backward-Wave OscillatorPan, Shi / Du, Chao-Hai / Bian, Hui-Qi / Gao, Zi-Chao / Li, Fan-Hong / Liu, Pu-Kun et al. | 2019
- 2396
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Double-Beam Gyrotron With Frequency MultiplicationBandurkin, Ilya V. / Glyavin, Mikhail Yu. / Idehara, Toshitaka / Savilov, Andrey V. et al. | 2019
- 2401
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Study of Passband and Stopband Properties of Sheet-Beam Folded Waveguide StructuresSudhamani, H. S. / Bhardwaj, R. / Reddy, S. U. M. / Balakrishnan, Jyothi et al. | 2019
- 2409
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Calculation and Application of Impedance Matrices for Vacuum Electronic DevicesJabotinski, Vadim / Chernin, David / Antonsen, Thomas M. / Vlasov, Alexander N. / Chernyavskiy, Igor A. et al. | 2019
- 2415
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Oscillators Utilizing Ferroelectric-Based Transistors and Their Coupled DynamicsThakuria, Niharika / Saha, Atanu K. / Thirumala, Sandeep K. / Jung, Byunghoo / Gupta, Sumeet K. et al. | 2019
- 2424
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Transition Metal Dichalcogenide-Based Field-Effect Transistors for Analog/Mixed- Signal ApplicationsRawat, Brajesh / M. M., Vinaya / Paily, Roy et al. | 2019
- 2431
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Compact Modeling of Perpendicular-Magnetic-Anisotropy Double-Barrier Magnetic Tunnel Junction With Enhanced Thermal Stability Recording StructureWang, Guanda / Zhang, Yue / Wang, Jinkai / Zhang, Zhizhong / Zhang, Kun / Zheng, Zhenyi / Klein, Jacques-Olivier / Ravelosona, Dafine / Zhang, Youguang / Zhao, Weisheng et al. | 2019
- 2437
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Temperature-Dependent Gate-Induced Drain Leakages Assessment of Dual-Metal Nanowire Field-Effect Transistor—Analytical ModelGoel, Anubha / Rewari, Sonam / Verma, Seema / Gupta, R. S. et al. | 2019
- 2446
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Fringe Capacitance Modeling in NanoPlate MOSFET Using Conformal MappingKim, Jongsu / Kang, Myounggon / Jeon, Jongwook / Shin, Hyungcheol et al. | 2019
- 2450
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Experimental Evidence of Zeros on Spectral Components of the Small-Signal Resistance of a Pumped DiodeSouza, Antonio A. L. / Dupouy, Emmanuel / Lima, Rafael A. V. P. et al. | 2019
- 2454
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A Planar Distributed Channel AlGaN/GaN HEMT TechnologyElksne, Maira / Al-Khalidi, Abdullah / Wasige, Edward et al. | 2019
- 2459
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Erratum to “Large-Signal Model of Graphene Field-Effect Transistors—Part I: Compact Modeling of GFET Intrinsic Capacitances” [Jul 16 2936-2941]| 2019
- 2459
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Erratum to “Large-Signal Model of Graphene Field-Effect Transistors—Part I: Compact Modeling of GFET Intrinsic Capacitances”Pasadas, Francisco / Jimenez, David et al. | 2019
- 2460
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IEEE Robert Bosch Micro and Nano Electro Mechanical Systems Award| 2019
- 2461
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Ultra Wide Band Gap Semiconductors for Power Control and Conversion| 2019
- 2463
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Call for Papers - T-ED special issue on Memory Devices and Technologies for the Next Decade| 2019
- 2465
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2019 IEEE EDS Early Career Award| 2019
- 2466
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J. J. Ebers Award| 2019
- 2467
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2019 EDS Education Award| 2019
- 2468
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Introducing IEEE Collabratec| 2019
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Table of contents| 2019
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IEEE Transactions on Electron Devices publication information| 2019
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