Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates (Englisch)
- Neue Suche nach: Yan, G. G.
- Neue Suche nach: Liu, X. F.
- Neue Suche nach: Zhang, F.
- Neue Suche nach: Shen, Z. W.
- Neue Suche nach: Zhao, W. S.
- Neue Suche nach: Wang, L.
- Neue Suche nach: Cui, Y. X.
- Neue Suche nach: Li, J. T.
- Neue Suche nach: Sun, G. S.
- Neue Suche nach: Yan, G. G.
- Neue Suche nach: Liu, X. F.
- Neue Suche nach: Zhang, F.
- Neue Suche nach: Shen, Z. W.
- Neue Suche nach: Zhao, W. S.
- Neue Suche nach: Wang, L.
- Neue Suche nach: Cui, Y. X.
- Neue Suche nach: Li, J. T.
- Neue Suche nach: Sun, G. S.
In:
Semiconductors: silicon carbide and related materials
; 31-32
;
2019
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ISBN:
- Aufsatz (Konferenz) / Print
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Titel:Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates
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Beteiligte:Yan, G. G. ( Autor:in ) / Liu, X. F. ( Autor:in ) / Zhang, F. ( Autor:in ) / Shen, Z. W. ( Autor:in ) / Zhao, W. S. ( Autor:in ) / Wang, L. ( Autor:in ) / Cui, Y. X. ( Autor:in ) / Li, J. T. ( Autor:in ) / Sun, G. S. ( Autor:in )
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Kongress:Asia-Pacific Conference on Silicon Carbide and Related Materials ; 2018 ; Peking
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Erschienen in:
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Verlag:
- Neue Suche nach: Trans Tech Publications Ltd
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Erscheinungsort:Zurich
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Erscheinungsdatum:2019
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ISBN:
-
Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 33.72 / 53.09
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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