Suppression of Defect Formation and Their Impact on Short Channel Effects and Drivability of PDMOSFET with SiGe Source/Drain (Englisch, Japanisch)
- Neue Suche nach: Kim, Y. S.
- Neue Suche nach: Shimamune, Y.
- Neue Suche nach: Fukuda, M.
- Neue Suche nach: Katakami, A.
- Neue Suche nach: Hatada, A.
- Neue Suche nach: Kawamura, K.
- Neue Suche nach: Ohta, H.
- Neue Suche nach: Sakuma, T.
- Neue Suche nach: Hayami, Y.
- Neue Suche nach: Morioka, H.
- Neue Suche nach: Ogura, J.
- Neue Suche nach: Minami, T.
- Neue Suche nach: Tamura, N.
- Neue Suche nach: Mori, T.
- Neue Suche nach: Kojima, M.
- Neue Suche nach: Sukegawa, K.
- Neue Suche nach: Hashimoto, K.
- Neue Suche nach: Miyajima, M.
- Neue Suche nach: Sato, S.
- Neue Suche nach: Sugii, T.
- Neue Suche nach: Kim, Y. S.
- Neue Suche nach: Shimamune, Y.
- Neue Suche nach: Fukuda, M.
- Neue Suche nach: Katakami, A.
- Neue Suche nach: Hatada, A.
- Neue Suche nach: Kawamura, K.
- Neue Suche nach: Ohta, H.
- Neue Suche nach: Sakuma, T.
- Neue Suche nach: Hayami, Y.
- Neue Suche nach: Morioka, H.
- Neue Suche nach: Ogura, J.
- Neue Suche nach: Minami, T.
- Neue Suche nach: Tamura, N.
- Neue Suche nach: Mori, T.
- Neue Suche nach: Kojima, M.
- Neue Suche nach: Sukegawa, K.
- Neue Suche nach: Hashimoto, K.
- Neue Suche nach: Miyajima, M.
- Neue Suche nach: Sato, S.
- Neue Suche nach: Sugii, T.
In:
Handōtai, Shuseki-Kairo-Gijutsu-71.-Shinpojiumu-kōen-ronbunshū
; 39-42
;
2007
- Aufsatz (Konferenz) / Print
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Titel:Suppression of Defect Formation and Their Impact on Short Channel Effects and Drivability of PDMOSFET with SiGe Source/Drain
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Beteiligte:Kim, Y. S. ( Autor:in ) / Shimamune, Y. ( Autor:in ) / Fukuda, M. ( Autor:in ) / Katakami, A. ( Autor:in ) / Hatada, A. ( Autor:in ) / Kawamura, K. ( Autor:in ) / Ohta, H. ( Autor:in ) / Sakuma, T. ( Autor:in ) / Hayami, Y. ( Autor:in ) / Morioka, H. ( Autor:in )
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Erschienen in:
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Erscheinungsort:Tōkyō
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Erscheinungsdatum:2007
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch, Japanisch
- Neue Suche nach: 53.56
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
BKL: 53.56 Halbleitertechnologie -
Datenquelle:
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