1999 4th International Symposium on Plasma Process-Induced Damage : May 9-11, 1999, Monterey, California, USA (Englisch)
- Neue Suche nach: International Symposium on Plasma Process-Induced Damage
- Neue Suche nach: American Vacuum Society
- Neue Suche nach: IEEE Electron Devices Society
- Neue Suche nach: Ōyō Butsuri Gakkai
- Neue Suche nach: Dao, Leanne Thuy Lien
- Neue Suche nach: Koyanagi, Mitsumasa
- Neue Suche nach: Hook, Terence
- Neue Suche nach: International Symposium on Plasma Process-Induced Damage
- Neue Suche nach: American Vacuum Society
- Neue Suche nach: IEEE Electron Devices Society
- Neue Suche nach: Ōyō Butsuri Gakkai
1999
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ISBN:
- Konferenzband / Elektronische Ressource
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Titel:1999 4th International Symposium on Plasma Process-Induced Damage : May 9-11, 1999, Monterey, California, USA
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Weitere Titelangaben:4th International Symposium on Plasma Process-Induced Damage
Fourth International Symposium on Plasma Process-Induced Damage
Plasma process-induced damage, 1999 4th international symposium on -
Beteiligte:
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Kongress:International Symposium on Plasma Process-Induced Damage ; 4th
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Verlag:
- Neue Suche nach: Northern California Chapter of the American Vacuum Society
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Erscheinungsort:Sunnyvale, CA
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Erscheinungsdatum:1999
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Format / Umfang:1 Online-Ressource (211 pages)
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Anmerkungen:illustrations
"IEEE catalog no. 99TH8395"--Title page verso
Includes bibliographical references and index -
ISBN:
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Medientyp:Konferenzband
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Format:Elektronische Ressource
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Sprache:Englisch
- Neue Suche nach: 621.38152
- Weitere Informationen zu Dewey Decimal Classification
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Schlagwörter:
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Klassifikation:
DDC: 621.38152 -
Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Shift of Paradigms in MicroelectronicsWieder, A. W. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 3
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Minimizing Charge-Up Damage During Dielectric Etchers' Hardware and Process Development Stages (invited)Shan, H. / Bjorkman, C. / Lindley, R. / Collins, K. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 8
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Impact of Reactor- and Transistor-type on Electron ShadingCreusen, M. / Ackaert, J. / De Backer, E. / Groeseneken, G. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 12
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Study of the Influence of Process Parameters on Gate Oxide Degradation During Contact Etching in MERIE and HDP ReactorsPoiroux, T. / Pascal, F. / Heitzmann, M. / Berruyer, P. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 16
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Plasma Charging and Layout Effects (invited)Simon, P. / Luchies, J. / Maly, W. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 21
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On the Dependence of Plasma-Induced Damage on Antenna AreaHwang, G. S. / Giapis, K. P. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 25
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Effect of Plasma Density and Uniformity, Electron Temperature, Process Gas, and Chamber on Electron Shading DamageSiu, S. / Patrick, R. / Vahedi, V. / Alba, S. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 29
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Evaluation and Reduction of Electron Shading Damage in High Temperature EtchingNojiri, K. / Kato, K. / Kawakami, H. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 33
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The Sensitivity of Electron Shading Damage to Electron Temperature, Electron Density, and Plasma-to-Wafer Electron Energy ThresholdYamartino, J. / Loewenhardt, P. K. / Huang, K. / Chen, H. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 37
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Pulse-Time-Modulated Plasma Etching for High Performance Polysilicon Patterning on Thin Gate OxidesOhtake, H. / Samukawa, S. / Noguchi, K. / Iida, H. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 41
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Compounding Effects of UV Exposure, Ion Bombardment, Electron Shading, and Plasma Charging in a High Density Plasma Poly EtcherLin, S.-S. / Tsui, B.-Y. / Tsai, C.-S. / Hsia, C. C. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 45
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Plasma Process-Induced Degradation of Thin Inter-Polysilicon Dielectric LayersHurley, P. / Sheehan, E. / Mathewson, A. / Rodrigues, R. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 49
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Evaluation of Rapid Thermal Nitrided ONO Interpoly Dielectric Resistance to Plasma Process-Induced DamageCha, C.-L. / Chor, E. F. / Gong, H. / Zhang, A. Q. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 53
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Plasma Induced Damage from HDP Process on the Ultra-Thin Gate OxideChen, S. / Perera, C. / Wen, J. / Sudijono, J. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 57
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Effect of the Pattern Structures on the Charging Damage During Metal EtchingHasegawa, A. / Aoyama, M. / Ishida, T. / Nakamura, M. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 61
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Annealing of Plasma Charging Damage and Residual Degradation in MOS TransistorsBrozek, T. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 65
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Application of the Deuterium Sintering Process to Improve the Device Design Rule in Reducing Plasma Induced DamageKim, Y.-K. / Lee, S.-H. / Lee, H.-S. / Kim, B.-S. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 69
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A Study of Plasma-Induced Damage on Hot-Carrier Lifetime Using Pre-Stressed DataBhuva, B. / Mongkolkachit, P. / Bui, N. / Kerns, S. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 73
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Plasma Damage Impact on NMOS Electrical Characteristics During a CCS StressPantisano, L. / Paccagnella, A. / Colombo, P. / Valentini, M. G. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 77
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Plasma Damage Evaluation Using Matched Transistors and Determination of Damage Prevention OptionsEllis, J. / Comeau, A. R. / Porter, R. / Bossingham, J. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 80
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Evaluation of Charging Damage Caused by the Pattern Structures During A1 EtchingTamitani, N. / Kogure, R. / Takaoka, Y. / Moriyama, I. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 84
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Plasma Damage During Dielectric Etch in High Density Plasma EtcherTsui, B.-Y. / Lin, S.-S. / Tsai, C.-S. / Hsia, C. C. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 88
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The Prevention of Charge Damage on Thin Gate Oxide from High Density Plasma DepositionShih, H. H. / Tsai, C. Y. / Yang, G. S. / Chen, K. C. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 92
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Charge-Up Damage of Dual Gate Transistor During RF Pre-Cleaning of Metal Contact Before Barrier Metal DepositionPark, W.-J. / Shin, K.-S. / Kim, J.-S. / Kang, C.-J. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 96
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Effects of Processing Pressure on Device Damage in RF Biased ECR CVDLassig, S. / Vahedi, V. / Benjamin, N. / Mulgrew, P. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 100
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Reduction and Nonuniformity of High Density Plasma Process-Induced Electrical Degradation in MOS DevicesTzeng, P.-Z. / Li, J.-C. / Yeh, C.-C. / Chang-Liao, K.-S. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 104
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Comparison of CHARM-2 and Surface Potential Measurement to Monitor Plasma Induced Gate Oxide DamageLee, M.-Y. / Hu, J. / Catabay, W. / Schoenborn, P. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 108
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A Method for Reducing Notching and Electron Shading Damage in Continuous Wave ECR Metal EtcherTabara, S. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 112
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Evaluation of Charging Damage in a Plasma Doping SystemGoeckner, M. / Felch, S. B. / Fang, Z. / Weeman, J. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 116
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Process-Induced Damage by a Low Energy Neutral Beam SourceTang, X. / Wang, Q. / Manos, D. M. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 120
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Plasma Damage Characterization of the Lam TCP 9600PTX High-Density, Inductively Coupled Metal Etcher and Microwave AsherPatrick, R. / Siu, S. / Baldwin, S. / Werking, J. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 124
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Characterization of Ion Implanter Electron Flood Guns Using Charge Pumping and Threshold Voltage MeasurementsSawyer, W. / Mason, P. W. / Santiesteban, R. S. / Perrson, E. J. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 128
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Hardware and Process Dependence of Electron Shading Damage in a High Density Plasma Oxide Etch ToolWerking, J. / Bosch, W. / McCormack, D. W. / Flanner, J. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 132
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Detection of Magnetically Induced Plasma Charging from Passivation Level Processing Using Corona-Oxide-Semiconductor TechniquesLobbins, J. / Nelson, L. M. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 136
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Ultra-Thin Oxynitride Gate Dielectrics for 0.18 m CMOS and Beyond (invited)Takayanagi, M. / Toyoshima, Y. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 137
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Relationship Between Plasma Damage, SILC and Gate-Oxide ReliabilityCheung, K. P. / Lu, Q. / Ciampa, N. A. / Liu, C. T. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 141
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Plasma-Induced Charging Damage in Ultrathin (3 nm) Nitrided OxidesChen, C.-C. / Lin, H.-C. / Chang, C.-Y. / Liang, M.-S. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 145
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Control of Performance Degradation Induced by Contact Etching for a Ferroelectric Capacitor Using a Pulsed-Power Inductively Coupled PlasmaKwon, O. S. / Choi, C. J. / Park, C. / Seol, Y. S. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 149
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Plasma Diagnosis and Its Relation to Damage (invited)Malyshev, M. V. / Donnelly, V. / Colonell, J. / Samukawa, S. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 155
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Suppression of Topography Dependent Charging Using a Phase-Controlled Inductively Coupled PlasmaShin, K.-S. / Park, W.-J. / Kim, J.-S. / Kang, C.-J. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 159
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Effect of Wafer Bias Frequency on Microtrenching During High Selective Gate EtchingMorioka, H. / Hasegawa, A. / Ishida, T. / Abe, N. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 163
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Evaluation and Reduction of Charging Damage During Metal EtchingOmoto, Y. / Ono, T. / Watanabe, S. / Yoshioka, K. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 167
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Reduction of Charging Damage of Gate Oxide by Time Modulation Bias and MethodOno, T. / Omoto, Y. / Mizutani, T. / Yoshioka, K. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 171
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Damascene Copper Integration (invited)Stamper, A. K. / Heidenreich, J. / Hubanks, D. / Luce, S. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 177
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Comparison Between Gate Oxide Degradation Induced by Copper Dual Damascene and Conventional Aluminum ProcessesPoiroux, T. / Heitzmann, M. / Morand, Y. / Berruyer, P. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 181
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Process-Induced Damage in a Dual-Oxide (3.5/6.8 nm) 0.18-m Copper CMOS TechnologyHook, T. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 184
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Charging Protection and Degradation by Antenna Environment on NMOS and PMOS TransistorsCarrere, J.-P. / Heslinga, D. R. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 188
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Effect of Low Temperature Deuterium Annealing on Plasma-Process Induced DamageLee, S. H. / Kim, Y. K. / Lee, Y. H. / Kang, H. S. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 192
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Plasma Vacuum Ultraviolet Emission in a High Density EtcherCismaru, C. / Shohet, J. L. / McVittie, J. P. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 196
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Alternative Interpretation of Plasma Processing Damage Data to Facilitate Comparisons Between Oxide EtchersMaynard, H. / Colonell, J. / Werking, J. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 200
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Device Effects and Charging Damage: Correlations Between SPIDER-MEM and CHARM-2Lukaszek, W. / Rendon, M. J. / Dyer, D. E. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 204
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Dependence of Plasma Damage on Density and T~e in a Decoupled Plasma Source Metal EtcherDowney, S. W. / Malyshev, M. V. / Donnelly, V. M. / Colonell, J. I. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 208
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Fast Hot-Carrier Aging Method of Charging Damage MeasurementCheung, K. P. / Lloyd, E. J. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
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1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395)| 1999