Bandgap, Mobility, Dielectric Constant, and Baliga’s Figure of Merit of 4H-SiC, GaN, and β‑Ga2O3 from 300 to 620 K (Englisch)
- Neue Suche nach: Cheng, Lu
- Neue Suche nach: Yang, Jia-Yue
- Weitere Informationen zu Yang, Jia-Yue:
- https://orcid.org/0000-0002-3678-827X
- Neue Suche nach: Zheng, Wei
- Weitere Informationen zu Zheng, Wei:
- https://orcid.org/0000-0003-4329-0469
- Neue Suche nach: Cheng, Lu
- Neue Suche nach: Yang, Jia-Yue
- Weitere Informationen zu Yang, Jia-Yue:
- https://orcid.org/0000-0002-3678-827X
- Neue Suche nach: Zheng, Wei
- Weitere Informationen zu Zheng, Wei:
- https://orcid.org/0000-0003-4329-0469
In:
ACS Applied Electronic Materials
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4
, 8
;
4140-4145
;
2022
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Bandgap, Mobility, Dielectric Constant, and Baliga’s Figure of Merit of 4H-SiC, GaN, and β‑Ga2O3 from 300 to 620 K
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Weitere Titelangaben:ACS Appl. Electron. Mater.
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Beteiligte:
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Erschienen in:ACS Applied Electronic Materials ; 4, 8 ; 4140-4145
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Verlag:
- Neue Suche nach: American Chemical Society
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Erscheinungsdatum:23.08.2022
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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