ZnO-based Thin Film Transistors Employing Aluminum Titanate Gate Dielectrics Deposited by Spray Pyrolysis at Ambient Air (Englisch)
- Neue Suche nach: Afouxenidis, Dimitrios
- Neue Suche nach: Mazzocco, Riccardo
- Neue Suche nach: Vourlias, Georgios
- Neue Suche nach: Livesley, Peter J.
- Neue Suche nach: Krier, Anthony
- Neue Suche nach: Milne, William I.
- Neue Suche nach: Kolosov, Oleg
- Neue Suche nach: Adamopoulos, George
- Neue Suche nach: Afouxenidis, Dimitrios
- Neue Suche nach: Mazzocco, Riccardo
- Neue Suche nach: Vourlias, Georgios
- Neue Suche nach: Livesley, Peter J.
- Neue Suche nach: Krier, Anthony
- Neue Suche nach: Milne, William I.
- Neue Suche nach: Kolosov, Oleg
- Neue Suche nach: Adamopoulos, George
In:
ACS Applied Materials & Interfaces
;
7
, 13
;
7334-7341
;
2015
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:ZnO-based Thin Film Transistors Employing Aluminum Titanate Gate Dielectrics Deposited by Spray Pyrolysis at Ambient Air
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Weitere Titelangaben:ACS Appl. Mater. Interfaces
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Beteiligte:Afouxenidis, Dimitrios ( Autor:in ) / Mazzocco, Riccardo ( Autor:in ) / Vourlias, Georgios ( Autor:in ) / Livesley, Peter J. ( Autor:in ) / Krier, Anthony ( Autor:in ) / Milne, William I. ( Autor:in ) / Kolosov, Oleg ( Autor:in ) / Adamopoulos, George ( Autor:in )
-
Erschienen in:ACS Applied Materials & Interfaces ; 7, 13 ; 7334-7341
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Verlag:
- Neue Suche nach: American Chemical Society
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Erscheinungsdatum:08.04.2015
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 7, Ausgabe 13
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