Persistent photoquenching and anion antisite defects in neutron‐irradiated GaAs (Englisch)
Nationallizenz
- Neue Suche nach: Goltzene, A.
- Neue Suche nach: Meyer, B.
- Neue Suche nach: Schwab, C.
- Neue Suche nach: Goltzene, A.
- Neue Suche nach: Meyer, B.
- Neue Suche nach: Schwab, C.
In:
Applied Physics Letters
;
54
, 10
;
907-909
;
1989
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Persistent photoquenching and anion antisite defects in neutron‐irradiated GaAs
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Beteiligte:
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Erschienen in:Applied Physics Letters ; 54, 10 ; 907-909
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Verlag:
- Neue Suche nach: American Institute of Physics
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Erscheinungsdatum:06.03.1989
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 54, Ausgabe 10
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