Novel WSi/Au T‐shaped gate GaAs metal–semiconductor field‐effect‐transistor fabrication process for super low‐noise microwave monolithic integrated circuit amplifiers (Englisch)
- Neue Suche nach: Takano, H.
- Neue Suche nach: Hosogi, K.
- Neue Suche nach: Kato, T.
- Neue Suche nach: Oku, T.
- Neue Suche nach: Kohno, Y.
- Neue Suche nach: Nakano, H.
- Neue Suche nach: Sato, K.
- Neue Suche nach: Funada, M.
- Neue Suche nach: Ishihara, O.
- Neue Suche nach: Tsubouchi, N.
- Neue Suche nach: Takano, H.
- Neue Suche nach: Hosogi, K.
- Neue Suche nach: Kato, T.
- Neue Suche nach: Oku, T.
- Neue Suche nach: Kohno, Y.
- Neue Suche nach: Nakano, H.
- Neue Suche nach: Sato, K.
- Neue Suche nach: Funada, M.
- Neue Suche nach: Ishihara, O.
- Neue Suche nach: Tsubouchi, N.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
;
13
, 3
;
1014-1017
;
1995
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Novel WSi/Au T‐shaped gate GaAs metal–semiconductor field‐effect‐transistor fabrication process for super low‐noise microwave monolithic integrated circuit amplifiers
-
Weitere Titelangaben:Novel WSi/Au T‐shaped gate GaAs MESFET fabrication process
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Beteiligte:Takano, H. ( Autor:in ) / Hosogi, K. ( Autor:in ) / Kato, T. ( Autor:in ) / Oku, T. ( Autor:in ) / Kohno, Y. ( Autor:in ) / Nakano, H. ( Autor:in ) / Sato, K. ( Autor:in ) / Funada, M. ( Autor:in ) / Ishihara, O. ( Autor:in ) / Tsubouchi, N. ( Autor:in )
-
Erschienen in:
-
Verlag:
- Neue Suche nach: American Vacuum Society
-
Erscheinungsdatum:01.05.1995
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Format / Umfang:4 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:MICROWAVE AMPLIFIERS , INTEGRATED CIRCUITS , MESFET , NOISE , GATES , GALLIUM ARSENIDES , TUNGSTEN SILICIDES , GOLD , ION IMPLANTATION , GaAs , WSi , Au
-
Datenquelle:
Inhaltsverzeichnis – Band 13, Ausgabe 3
Zeige alle Jahrgänge und Ausgaben
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