Growth of carbon doping using by gas source molecular beam epitaxy for InP/InGaAs heterojunction bipolar transistor applications (Englisch)
- Neue Suche nach: Kuo, H. C.
- Neue Suche nach: Ahmari, D.
- Neue Suche nach: Moser, B. G.
- Neue Suche nach: Mu, J.
- Neue Suche nach: Hattendorf, M.
- Neue Suche nach: Scott, D.
- Neue Suche nach: Meyer, R.
- Neue Suche nach: Feng, M.
- Neue Suche nach: Stillman, G. E.
- Neue Suche nach: Kuo, H. C.
- Neue Suche nach: Ahmari, D.
- Neue Suche nach: Moser, B. G.
- Neue Suche nach: Mu, J.
- Neue Suche nach: Hattendorf, M.
- Neue Suche nach: Scott, D.
- Neue Suche nach: Meyer, R.
- Neue Suche nach: Feng, M.
- Neue Suche nach: Stillman, G. E.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
;
17
, 3
;
1185-1189
;
1999
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Growth of carbon doping using by gas source molecular beam epitaxy for InP/InGaAs heterojunction bipolar transistor applications
-
Beteiligte:Kuo, H. C. ( Autor:in ) / Ahmari, D. ( Autor:in ) / Moser, B. G. ( Autor:in ) / Mu, J. ( Autor:in ) / Hattendorf, M. ( Autor:in ) / Scott, D. ( Autor:in ) / Meyer, R. ( Autor:in ) / Feng, M. ( Autor:in ) / Stillman, G. E. ( Autor:in )
-
Erschienen in:
-
Verlag:
- Neue Suche nach: American Vacuum Society
-
Erscheinungsdatum:01.05.1999
-
Format / Umfang:5 pages
-
ISSN:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Elektronische Ressource
-
Sprache:Englisch
-
Schlagwörter:
-
Datenquelle:
Inhaltsverzeichnis – Band 17, Ausgabe 3
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 905
-
Alignment with exposed resist in photolithographyBurm, J. / Tate, A. / Kopf, R. F. / Ryan, R. W. / Hamm, R. A. / Chirovsky, L. M. et al. | 1999
- 908
-
Spatial frequency analysis of optical lithography resolution enhancement techniquesBrueck, S. R. J. / Chen, Xiaolan et al. | 1999
- 921
-
Experimental comparison of off-axis illumination and imaging interferometric lithographyChen, Xiaolan / Brueck, S. R. J. et al. | 1999
- 930
-
Amorphous carbon films for use as both variable-transmission apertures and attenuated phase shift masks for deep ultraviolet lithographyWindt, David L. / Cirelli, Raymond A. et al. | 1999
- 933
-
High resolution organic resists for charged particle lithographyOchiai, Yukinori / Manako, Shoko / Fujita, Jun-ichi / Nomura, Eiichi et al. | 1999
- 939
-
Formation and growth of on (001)Si inside 0.2–2 μm oxide openings prepared by electron-beam lithographyYew, J. Y. / Chen, L. J. / Wu, W. F. et al. | 1999
- 945
-
Focused ion-beam structuring of Si and heterostructures using adsorbed hydrogen as a resistFuhrmann, H. / Döbeli, M. / Mühle, R. / Suter, M. et al. | 1999
- 949
-
Formation and micromachining of Teflon (fluorocarbon polymer) film by a completely dry process using synchrotron radiationInayoshi, Muneto / Ito, Masafumi / Hori, Masaru / Goto, Toshio / Hiramatsu, Mineo et al. | 1999
- 957
-
Novel process for selective etching using a novel gas source for preventing global warmingFujita, Kazushi / Ito, Masafumi / Hori, Masaru / Goto, Toshio et al. | 1999
- 961
-
Model for etch depth dependence on GaAs via hole diameterAbraham-Shrauner, Barbara / Nordheden, Karen J. / Lee, Yao-Sheng et al. | 1999
- 965
-
Inductively coupled plasma etching of III–V antimonides in andZhang, L. / Lester, L. F. / Shul, R. J. / Willison, C. G. / Leavitt, R. P. et al. | 1999
- 970
-
Dry oxidation resistance of ultrathin nitride films: Ordered and amorphous silicon nitride on Si(111)Wallace, Robert M. / Wei, Yi et al. | 1999
- 978
-
Nanometer-scale Si-selective epitaxial growth using an ultrathin maskMiyata, Noriyuki / Watanabe, Heiji / Ichikawa, Masakazu et al. | 1999
- 983
-
Adsorption of atomic hydrogen on the Si(001) 4x3-In surface studied by coaxial impact collision ion scattering spectroscopy and scanning tunneling microscopyRyu, J. T. / Fuse, T. / Kubo, O. / Fujino, T. / Tani, H. / Harada, T. / Saranin, A. A. / Zotov, A. V. / Katayama, M. / Oura, K. et al. | 1999
- 983
-
Adsorption of atomic hydrogen on the Si(001) 4×3-In surface studied by coaxial impact collision ion scattering spectroscopy and scanning tunneling microscopyRyu, J. T. / Fuse, T. / Kubo, O. / Fujino, T. / Tani, H. / Harada, T. / Saranin, A. A. / Zotov, A. V. / Katayama, M. / Oura, K. et al. | 1999
- 989
-
Microstructure characterization of oxidized nanocrystalline Si:H film by transmission electron microscopyLu, Hai / Liu, Jianhong / Li, Wei / Chen, Kunji / Huang, Xinfan et al. | 1999
- 994
-
Multiple layers of silicon-on-insulator for nanostructure devicesNeudeck, Gerold W. / Pae, Sangwoo / Denton, John P. / Su, Tai-chi et al. | 1999
- 999
-
Role of film conformality in charging damage during plasma-assisted interlevel dielectric depositionHwang, Gyeong S. / Giapis, Konstantinos P. et al. | 1999
- 1003
-
Growth, optical, and electron transport studies across isotype n-GaAs/n-Ge heterojunctionsHudait, Mantu Kumar / Krupanidhi, S. B. et al. | 1999
- 1011
-
Multiwafer gas source molecular beam epitaxial system for production technologyIzumi, Shigekazu / Kouji, Yoshiharu / Hayafuji, Norio et al. | 1999
- 1017
-
Improvement of properties of dynamic random access memories capacitors by plasma doping process after the formation of hemispherical-grained siliconMoon, H. S. / Choi, H. S. / Jang, H. G. / Hwang, C. J. / Woo, S. H. / Han, I. K. / Yang, H. S. et al. | 1999
- 1022
-
Ohmic contacts in AlSb/InAs high electron mobility transistors for low-voltage operationBoos, J. B. / Bennett, B. R. / Kruppa, W. / Park, D. / Mittereder, J. / Bass, R. / Twigg, M. E. et al. | 1999
- 1028
-
Formation of W underlayer by switching bias sputtering to plug 0.25 μm contact holesOnuki, Jin / Nihei, Masayasu / Suwa, Masateru / Goshima, Hidekazu et al. | 1999
- 1034
-
Au/Ge-based Ohmic contact to an AlGaAs/InGaAs pseudomorphic high electron mobility transistor with an undoped cap layerLee, Jong-Lam / Kim, Yi-Tae / Yoo, Hyung Mo / Lee, Gi Young et al. | 1999
- 1040
-
B implantation in 6H–SiC: Lattice damage recovery and implant activation upon high-temperature annealingValcheva, E. / Paskova, T. / Ivanov, I. G. / Yakimova, R. / Wahab, Q. / Savage, S. / Nordell, N. / Harris, C. I. et al. | 1999
- 1045
-
Plasma enhanced chemically vapor deposited thin films for microelectromechanical systems applications with tailored optical, thermal, and mechanical propertiesHorn, M. W. / Goodman, R. B. / Rothschild, M. et al. | 1999
- 1050
-
Double exchange-related interfacial tunneling and the corresponding giant magnetoresistance in granular perovskitesZhang, Ning / Zhong, Wei / Ding, Weiping et al. | 1999
- 1056
-
Development of an Er–Ni liquid alloy ion sourceChao, L. C. / Steckl, A. J. et al. | 1999
- 1059
-
Nitrogen-incorporated distorted nanocrystalline diamond films: Structure and field emission propertiesWu, Kehui / Wang, E. G. / Chen, J. / Xu, N. S. et al. | 1999
- 1064
-
Field emission spectroscopy from discharge activated chemical vapor deposition diamondGröning, O. / Küttel, O. M. / Gröning, P. / Schlapbach, L. et al. | 1999
- 1072
-
Field emission properties of the polycrystalline diamond-coated silicon emittersYang, Su-Hua / Yokoyama, Meiso et al. | 1999
- 1076
-
Mechanism of efficient and stable silicon films surface-emitting Cold cathode based on porous polycrystallineKomoda, T. / Sheng, X. / Koshida, N. et al. | 1999
- 1076
-
Mechanism of efficient and stable surface-emitting cold cathode based on porous polycrystalline silicon filmsKomoda, Takuya / Sheng, Xia / Koshida, Nobuyoshi et al. | 1999
- 1080
-
High pressure, high temperature scanning tunneling microscopyJensen, John A. / Rider, Keith B. / Chen, Yong / Salmeron, Miquel / Somorjai, Gabor A. et al. | 1999
- 1085
-
Application of dichromated gelatin for dry developed lithographic techniques on GaAsVillalvilla, J. M. / Vallés-Abarca, J. A. / Quintana, J. A. / Crespo, J. et al. | 1999
- 1087
-
Patterning of octadecylsiloxane self-assembled monolayers on Si(100) using atomsHill, S. B. / Haich, C. A. / Dunning, F. B. / Walters, G. K. / McClelland, J. J. / Celotta, R. J. / Craighead, H. G. / Han, J. / Tanenbaum, D. M. et al. | 1999
- 1090
-
Collapse behavior of microresist pattern analyzed by the tip indentation method with an atomic force microscopeKawai, Akira et al. | 1999
- 1094
-
Novel metallization technique for filling 100-nm-wide trenches and vias with very high aspect ratioMonteiro, Othon R. et al. | 1999
- 1098
-
Control of seed layer for a low temperature formation of polycrystalline silicon with high crystallinity and a smooth surfaceMurata, Kazuya / Ito, Masafumi / Hori, Masaru / Goto, Toshio et al. | 1999
- 1101
-
Low temperature metal-organic chemical vapor deposition of tungsten nitride as diffusion barrier for copper metallizationKelsey, Jean E. / Goldberg, Cindy / Nuesca, Guillermo / Peterson, Gregory / Kaloyeros, Alain E. / Arkles, Barry et al. | 1999
- 1105
-
Ordering of quantum dots self-organized on GaAs(311)B substratesLan, S. / Akahane, K. / Song, H. Z. / Okada, Y. / Kawabe, M. et al. | 1999
- 1116
-
Growth and electroluminescent properties of self-organized quantum dots grown on siliconLinder, K. K. / Phillips, J. / Qasaimeh, O. / Liu, X. F. / Krishna, S. / Bhattacharya, P. et al. | 1999
- 1120
-
Improved size uniformity of InAs quantum dots grown on a lateral composition modulated InGaAs surfaceWohlert, D. E. / Cheng, K. Y. / Chang, K. L. / Hsieh, K. C. et al. | 1999
- 1124
-
Long-wavelength luminescence from quantum dots grown by migration enhanced epitaxyBaklenov, O. / Nie, H. / Campbell, J. C. / Streetman, B. G. / Holmes, A. L. et al. | 1999
- 1127
-
Strained InGaAs/AlGaAs tilted T-shaped quantum wires fabricated by glancing-angle molecular beam epitaxyShimomura, S. / Ohta, K. / Tatsuoka, Y. / Hiyamizu, S. / Fujita, K. / Egami, N. et al. | 1999
- 1131
-
Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substratesHoke, W. E. / Lemonias, P. J. / Mosca, J. J. / Lyman, P. S. / Torabi, A. / Marsh, P. F. / McTaggart, R. A. / Lardizabal, S. M. / Hetzler, K. et al. | 1999
- 1136
-
InP-collector double-heterojunction bipolar transistors by valved phosphorus crackerChin, T. P. / Gutierrez-Aitken, A. L. / Cowles, J. / Kaneshiro, E. N. / Han, A. C. / Block, T. R. / Oki, A. K. / Streit, D. C. et al. | 1999
- 1139
-
Growth of high performance InGaAs/InP doped channel heterojunction field effect transistor with a strained GaInP Schottky barrier enhancement layer by gas source molecular beam epitaxyKuo, H. C. / Moser, B. G. / Hsia, H. / Tang, Z. / Feng, M. / Stillman, G. E. / Lin, C. H. / Chen, H. et al. | 1999
- 1144
-
Photoluminescence of as-grown and thermally annealed InGaAsN/GaAs quantum wells grown by molecular beam epitaxyYang, X. / Heroux, J. B. / Jurkovic, M. J. / Wang, W. I. et al. | 1999
- 1147
-
Fabrication and characterization of a two-dimensional electron gas in modulation doped quantum wellsKnobel, R. / Smorchkova, I. P. / Samarth, N. et al. | 1999
- 1151
-
Study of factors limiting electron mobility in InSb quantum wellsChung, S. J. / Goldammer, K. J. / Lindstrom, S. C. / Johnson, M. B. / Santos, M. B. et al. | 1999
- 1155
-
quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxyTatsuoka, Yasuaki / Kamimoto, Hitoshi / Kitano, Yoshiaki / Kitada, Takahiro / Shimomura, Satoshi / Hiyamizu, Satoshi et al. | 1999
- 1158
-
Analysis of excitonic absorption properties and their electric field dependence in chemical beam epitaxy-grown InAsP/InP multiple quantum wellsMonier, C. / Serdiukova, I. / Aguilar, L. / Newman, F. / Vilela, M. F. / Freundlich, A. et al. | 1999
- 1163
-
Comparison of strained channel InGaAs high electron mobility structures grown on InP and GaAsSandhu, R. S. / Bhasin, G. / Moore, C. D. / U’Ren, G. D. / Goorsky, M. S. / Chin, T. P. / Wojtowicz, M. / Block, T. R. / Streit, D. C. et al. | 1999
- 1167
-
Larger critical thickness determined by photoluminescence measurements in pseudomorphic quantum well grown on (411)A GaAs substrates by molecular beam epitaxyNii, K. / Kuriyama, R. / Hiraoka, T. / Kitada, T. / Shimomura, S. / Hiyamizu, S. et al. | 1999
- 1171
-
Photonic band-gap waveguide microcavities: Monorails and air bridgesLim, Kuo-Yi / Ripin, D. J. / Petrich, G. S. / Kolodziejski, L. A. / Ippen, E. P. / Mondol, M. / Smith, Henry I. / Villeneuve, P. R. / Fan, S. / Joannopoulos, J. D. et al. | 1999
- 1175
-
Substrate preparation and interface grading in InGaAs/InAlAs photodiodes grown on InP by molecular-beam epitaxyLenox, C. / Nie, H. / Kinsey, G. / Hansing, C. / Campbell, J. C. / Holmes, A. L. / Streetman, B. G. et al. | 1999
- 1180
-
A comparative study of carbon incorporation in heavily doped GaAs and grown by solid-source molecular beam epitaxy using carbon tetrabromideLubyshev, D. / Micovic, M. / Gratteau, N. / Cai, W.-Z. / Miller, D. L. / Ray, O. / Streater, R. W. / SpringThorpe, A. J. et al. | 1999
- 1185
-
Growth of carbon doping using by gas source molecular beam epitaxy for InP/InGaAs heterojunction bipolar transistor applicationsKuo, H. C. / Ahmari, D. / Moser, B. G. / Mu, J. / Hattendorf, M. / Scott, D. / Meyer, R. / Feng, M. / Stillman, G. E. et al. | 1999
- 1190
-
Heavily carbon-doped on InP (001) substrate grown by solid source molecular beam epitaxyCai, W. Z. / Lubyshev, D. I. / Miller, D. L. / Streater, R. W. / SpringThorpe, A. J. et al. | 1999
- 1195
-
Growth and morphology of Er-doped GaN on sapphire and hydride vapor phase epitaxy substratesBirkhahn, R. / Hudgins, R. / Lee, D. / Steckl, A. J. / Molnar, R. J. / Saleh, A. / Zavada, J. M. et al. | 1999
- 1200
-
Improvement of molecular beam epitaxy-grown low-temperature GaAs through p doping with Be and CSpecht, P. / Lutz, R. C. / Zhao, R. / Weber, E. R. / Liu, W. K. / Bacher, K. / Towner, F. J. / Stewart, T. R. / Luysberg, M. et al. | 1999
- 1200
-
Improvement of molecular beam epitaxy-grown Iow-temperature GaAs through p doping with Be and CSpecht, P. / Lutz, R. C. / Zhao, R. / Weber, E. R. / Liu, W. K. / Bacher, K. / Towner, F. J. / Stewart, T. R. / Luysberg, M. et al. | 1999
- 1205
-
Electrical characteristics of As-doped p-type HgCdTe epilayers grown on CdZnTe(211)B substrates by molecular beam epitaxyYang, B. / Aqariden, F. / Grein, C. H. / Jandaska, A. / Lee, T. S. / Nemani, A. / Rujirawat, S. / Shi, X. H. / Sumstine, M. / Velicu, S. et al. | 1999
- 1209
-
In Situ Monitoring and Characterization In situ surface composition and structure of InGaN and GaN thin films by time-of-flight mass spectroscopy of recoiled ionsKim, E. / Berishev, I. / Bensaoula, A. / Schultz, J. A. et al. | 1999
- 1209
-
In situ surface composition and structure of InGaN and GaN thin films by time-of-flight mass spectroscopy of recoiled ionsKim, E. / Berishev, I. / Bensaoula, A. / Schultz, J. A. et al. | 1999
- 1214
-
Refractive index measurements of ZnSe-based ternary epitaxial layers grown by molecular-beam epitaxy on GaAs (100)Peiris, F. C. / Lee, S. / Bindley, U. / Furdyna, J. K. et al. | 1999
- 1218
-
In situ monitoring of AlGaAs compositions and GaAs growth at high temperature by spectroscopic ellipsometry and desorption mass spectroscopyTaferner, W. T. / Mahalingam, K. / Dorsey, D. L. / Eyink, K. G. et al. | 1999
- 1223
-
Temperature-composition determination based on modeling of optical constants of III-V compound semiconductors measured by spectroscopic ellipsometryGrassi, Elena / Johnson, Shane R. / Beaudoin, Mario / Tsakalis, Kostas S. et al. | 1999
- 1227
-
Low-temperature molecular beam epitaxy of GaAs: A theoretical investigation of antisite incorporation and reflection high-energy diffraction oscillationsNatarajan, K. / Venkat, R. / Dorsey, D. L. et al. | 1999
- 1233
-
Use of spectroscopic ellipsometry for feedback control during the growth of thin AlAs layersBeaudoin, M. / Johnson, S. R. / Boonzaayer, M. D. / Zhang, Y.-H. / Johs, B. et al. | 1999
- 1237
-
Closed-loop control of composition and temperature during the growth of InGaAs lattice matched to InPJohnson, S. R. / Grassi, E. / Beaudoin, M. / Boonzaayer, M. D. / Tsakalis, K. S. / Zhang, Y. H. et al. | 1999
- 1241
-
Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphirePiquette, E. C. / Bridger, P. M. / Bandić, Z. Z. / McGill, T. C. et al. | 1999
- 1246
-
Molecular beam epitaxy growth of boron-containing nitridesGupta, V. K. / Wamsley, C. C. / Koch, M. W. / Wicks, G. W. et al. | 1999
- 1249
-
Native oxides and regrowth on III–N surfacesGupta, V. K. / Wamsley, C. C. / Koch, M. W. / Wicks, G. W. et al. | 1999
- 1252
-
Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructuresMurphy, M. J. / Chu, K. / Wu, H. / Yeo, W. / Schaff, W. J. / Ambacher, O. / Smart, J. / Shealy, J. R. / Eastman, L. F. / Eustis, T. J. et al. | 1999
- 1255
-
Defect reduction of based structures grown on InP by using Zn irradiation of the III–V surfaceZeng, L. / Guo, S. P. / Luo, Y. Y. / Lin, W. / Tamargo, M. C. / Xing, H. / Cargill, G. S. et al. | 1999
- 1259
-
Growth of ZnSe and ZnS films on Si(111) substrates with a nitrogen surface treatmentMéndez-Garcı́a, V. H. / López-López, M. / Hernández-Calderón, I. et al. | 1999
- 1263
-
Molecular beam epitaxy growth of PbSe on -coated Si(111) and observation of the PbSe growth interfaceWu, H. Z. / Fang, X. M. / Salas, R. / McAlister, D. / McCann, P. J. et al. | 1999
- 1267
-
Effect of an buffer layer on InSb thin film mobilityPartin, D. L. / Heremans, J. / Thrush, C. M. et al. | 1999
- 1272
-
Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxyMars, D. E. / Babic, D. I. / Kaneko, Y. / Chang, Ying-Lan / Subramanya, Sudhir / Kruger, Joachim / Perlin, Piotr / Weber, Eicke R. et al. | 1999
- 1276
-
Electron intersubband energy level spacing in self-organized quantum dot lasers from temperature-dependent modulation measurementsKlotzkin, D. / Phillips, J. / Jiang, H. / Singh, J. / Bhattacharya, P. et al. | 1999
- 1281
-
Low temperature solid-source molecular-beam epitaxy growth of Al-free quantum well laser diodes using a GaP-decomposition sourcePostigo, P. A. / Lullo, G. / Choy, K. H. / Fonstad, C. G. et al. | 1999
- 1285
-
InGaAs/GaAs/AlGaAs GRIN-SCH quantum-well lasers grown by solid-source molecular-beam epitaxy using dopingGratteau, Navid / Lubyshev, D. / Miller, D. L. et al. | 1999
- 1289
-
Growth and characterization of epitaxial and structuresSacks, R. N. / Qin, L. / Jazwiecki, M. / Ringel, S. A. / Clevenger, Marvin B. / Wilt, David / Goorsky, M. S. et al. | 1999
- 1294
-
Passivation of GaAs using gallium-gadolinium oxidesKwo, J. / Murphy, D. W. / Hong, M. / Mannaerts, J. P. / Opila, R. L. / Masaitis, R. L. / Sergent, A. M. et al. | 1999
- 1297
-
Molecular beam epitaxy of periodic layers on Si(111)Fang, X. M. / Wu, H. Z. / Shi, Z. / McCann, P. J. / Dai, N. et al. | 1999
- 1301
-
Molecular beam epitaxy growth of alloys on Si (100) with high carbon contentsRoe, K. J. / Dashiell, M. W. / Kolodzey, J. / Boucaud, P. / Lourtioz, J.-M. et al. | 1999