Passivation of GaAs surface recombination with organic thiols (Englisch)
- Neue Suche nach: Lunt, Sharon R.
- Neue Suche nach: Santangelo, Patrick G.
- Neue Suche nach: Lewis, Nathan S.
- Neue Suche nach: Lunt, Sharon R.
- Neue Suche nach: Santangelo, Patrick G.
- Neue Suche nach: Lewis, Nathan S.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
;
9
, 4
;
2333-2336
;
1991
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Passivation of GaAs surface recombination with organic thiols
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Weitere Titelangaben:Passivation of GaAs surface recombination with organic thiols
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Beteiligte:
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Erschienen in:
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Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.07.1991
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Format / Umfang:4 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 9, Ausgabe 4
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- 2100
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-
Passivation of GaAs surface recombination with organic thiolsLunt, Sharon R. / Santangelo, Patrick G. / Lewis, Nathan S. et al. | 1991
- 2337
-
Sulfur bonding to GaAsShin, J. / Geib, K. M. / Wilmsen, C. W. et al. | 1991
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-
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-
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-
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- 2358
-
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- 2369
-
Intrinsic recombination and interface characterization in ‘‘surface‐free’’ GaAs structuresWolford, D. J. / Gilliland, G. D. / Kuech, T. F. / Smith, L. M. / Martinsen, J. / Bradley, J. A. / Tsang, C. F. / Venkatasubramanian, R. / Ghandi, S. K. / Hjalmarson, H. P. et al. | 1991
- 2377
-
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- 2384
-
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- 2388
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- 2394
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Kinematic theory of ballistic electron emission spectroscopy of silicon–silicide interfacesStiles, M. D. / Hamann, D. R. et al. | 1991
- 2399
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- 2415
-
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- 2423
-
Growth of As overlayers on vicinal Si(100) surfacesAlerhand, O. L. / Wang, J. / Joannopoulos, J. D. / Kaxiras, Efthimios et al. | 1991
- 2427
-
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- 2433
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- 2437
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- 2445
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Spontaneous change of growth orientation of In0.5Ga0.5P/GaAs superlattices in molecular beam epitaxyNakamura, Y. / Mahalingam, K. / Otsuka, N. / Lee, H. Y. / Hafich, M. J. / Robinson, G. Y. et al. | 1991