Experimental conditions for uniform anisotropic etching of silicon with a microwave electron cyclotron resonance plasma system (Englisch)
- Neue Suche nach: Hopwood, J.
- Neue Suche nach: Reinhard, D. K.
- Neue Suche nach: Asmussen, J.
- Neue Suche nach: Hopwood, J.
- Neue Suche nach: Reinhard, D. K.
- Neue Suche nach: Asmussen, J.
In:
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
;
6
, 6
;
1896-1899
;
1988
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Experimental conditions for uniform anisotropic etching of silicon with a microwave electron cyclotron resonance plasma system
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Weitere Titelangaben:Experimental conditions for uniform anisotropic etching
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Beteiligte:
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Erschienen in:
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Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.11.1988
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Format / Umfang:4 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 6, Ausgabe 6
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- 1971
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- 2290
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High‐throughput nanolithography using an oxygen‐plasma resistant two‐layer resist systemLin, P. S. D. / Gozdz, A. S. et al. | 1988
- 2294
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Contrast enhancement of resist images by surface cross‐linkageHiraoka, H. / Hinsberg, W. / Clecak, N. / Patlach, A. / Chiong, K. N. et al. | 1988
- 2298
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High‐resolution electron beam lithography with negative organic and inorganic resistsBernstein, G. H. / Liu, W. P. / Khawaja, Y. N. / Kozicki, M. N. / Ferry, D. K. / Blum, L. et al. | 1988
- 2303
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Process control with chemical amplification resists using deep ultraviolet and x‐ray radiationSeligson, Daniel / Das, Siddhartha / Gaw, Henry / Pianetta, Piero et al. | 1988
- 2308
-
Nanometer lithography for III–V semiconductor wires using chloromethylated poly‐α‐methylstyrene resistMaile, B. E. / Forchel, A. / Germann, R. / Menschig, A. / Meier, H. P. / Grützmacher, D. et al. | 1988