Fabrication of mesoscopic structures by channeled ion implantation for the study of boundary scattering of electrons (Englisch)
- Neue Suche nach: Hornsey, R. I.
- Neue Suche nach: Cleaver, J. R. A.
- Neue Suche nach: Ahmed, H.
- Neue Suche nach: Hornsey, R. I.
- Neue Suche nach: Cleaver, J. R. A.
- Neue Suche nach: Ahmed, H.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
;
11
, 6
;
2579-2583
;
1993
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Fabrication of mesoscopic structures by channeled ion implantation for the study of boundary scattering of electrons
-
Weitere Titelangaben:Fabrication of mesoscopic structures
-
Beteiligte:
-
Erschienen in:
-
Verlag:
- Neue Suche nach: American Vacuum Society
-
Erscheinungsdatum:01.11.1993
-
Format / Umfang:5 pages
-
ISSN:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Elektronische Ressource
-
Sprache:Englisch
-
Schlagwörter:
-
Datenquelle:
Inhaltsverzeichnis – Band 11, Ausgabe 6
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1955
-
Gas phase etching of Si(111)‐(7×7) surfaces by oxygen observed by scanning tunneling microscopyDonig, F. / Feltz, A. / Kulakov, M. / Hessel, H. E. / Memmert, U. / Behm, R. J. et al. | 1993
- 1962
-
Fabrication of micromachined silicon tip transducer for tactile sensingJiang, J. C. / Faynberg, V. / White, R. C. / Allen, P. K. et al. | 1993
- 1968
-
Influence of oxygen on the formation of ripples on SiElst, K. / Vandervorst, W. / Alay, J. / Snauwaert, J. / Hellemans, L. et al. | 1993
- 1982
-
Scanning tunneling microscopy study of deoxygenated and de‐ionized water rinsed GaAs(111)‐B surfacesFukuda, T. / Hirota, Y. et al. | 1993
- 1987
-
Development of an ultrahigh vacuum atomic force microscope for investigations of semiconductor surfacesKageshima, M. / Yamada, H. / Nakayama, K. / Sakama, H. / Kawazu, A. / Fujii, T. / Suzuki, M. et al. | 1993
- 1992
-
Nanofabrication of metal structures in gold films deposited on micaSilva, L. A. / Laitenberger, P. / Palmer, R. E. et al. | 1993
- 2000
-
Rearrangement of Au(111) surface as a result of scanning with scanning tunneling/atomic force microscopesWang, Hong / Jing, Jing / Chu, H. T. / Henriksen, P. N. et al. | 1993
- 2006
-
Analysis of highly ordered pyrolytic graphite step defects via scanning tunneling microscopeNoll, J. D. / Cooper, J. B. / Myrick, M. L. et al. | 1993
- 2012
-
Digital scan model for focused ion beam induced gas etchingHarriott, L. R. et al. | 1993
- 2016
-
Transmission electron microscopy specimen preparation technique using focused ion beam fabrication: Application to GaAs metal–semiconductor field effect transistorsYamaguchi, Akira / Shibata, Masahiro / Hashinaga, Tatsuya et al. | 1993
- 2021
-
Novel scheme for the preparation of transmission electron microscopy specimens with a focused ion beamOverwijk, M. H. F. / van den Heuvel, F. C. / Bulle‐Lieuwma, C. W. T. et al. | 1993
- 2025
-
Hydrogen plasma processing of GaAs and AlGaAsChoquette, Kent D. / Freund, R. S. / Hong, M. / Luftman, H. S. / Chu, S. N. G. / Mannaerts, J. P. / Wetzel, R. C. et al. | 1993
- 2033
-
Ultraviolet‐ozone oxidation of GaAs(100) and InP(100)Lu, Z. H. / Bryskiewicz, B. / McCaffrey, J. / Wasilewski, Z. / Graham, M. J. et al. | 1993
- 2038
-
Identification of volatile products in low pressure hydrocarbon electron cyclotron resonance reactive ion etching of InP and GaAsMelville, D. L. / Simmons, J. G. / Thompson, D. A. et al. | 1993
- 2046
-
Ion velocity distributions in helicon wave plasmas: Magnetic field and pressure effectsNakano, T. / Giapis, K. P. / Gottscho, R. A. / Lee, T. C. / Sadeghi, N. et al. | 1993
- 2057
-
p‐type ZnSe grown by molecular beam epitaxy with remote microwave plasma of N2Kawakami, Y. / Ohnakado, T. / Tsuka, M. / Tokudera, S. / Ito, Y. / Fujita, Sz. / Fujita, Sg. et al. | 1993
- 2062
-
Galvanomagnetic study of p‐Hg1−xCdxTe passivated surfacesHöschl, P. / Moravec, P. / Franc, J. / Grill, R. / Milev, P. / Belas, E. et al. | 1993
- 2067
-
Electron cyclotron resonance sputter removal of SiO2 on silicon wafersGopinath, V. / Salbert, G. T. / Grotjohn, T. A. / Reinhard, D. K. et al. | 1993
- 2071
-
Influence of reactant transport on fluorine reactive ion etching of deep trenches in siliconArnold, John C. / Gray, David C. / Sawin, Herbert H. et al. | 1993
- 2081
-
Characterization of silicon dioxide and phosphosilicate glass deposited filmsRojas, S. / Zanotti, L. / Borghesi, A. / Sassella, A. / Pignatel, G. U. et al. | 1993
- 2090
-
Comparison of passivation films: The effect of thermal cycles and comparison of phosphorous doped oxide filmsWu, T. H. Tom / O’Brien, Kari / Hemmes, Diederik G. et al. | 1993
- 2096
-
Ellipsometric monitoring and control of the rapid thermal oxidation of siliconConrad, K. A. / Sampson, R. K. / Massoud, H. Z. / Irene, E. A. et al. | 1993
- 2102
-
Ellipsometric determination of the thickness and refractive index of silicon filmsLi, M. / Yakovlev, V. A. / Wall, J. / Irene, E. A. et al. | 1993
- 2107
-
Selective and blanket copper chemical vapor deposition for ultra‐large‐scale integrationJain, A. / Kodas, T. T. / Jairath, R. / Hampden‐Smith, M. J. et al. | 1993
- 2114
-
Tolerance on alignment error in GHOST proximity effect correctionMoriizumi, K. / Broers, A. N. et al. | 1993
- 2121
-
Lift‐off process for noble metalsDomanský, Karel / Petelenz, Danuta / Janata, Jiří et al. | 1993
- 2123
-
Nanofabrication techniques for a 100 nm‐scale tungsten polycide gate structureAzuma, T. / Nakasugi, T. / Oogi, S. / Takigami, Y. / Oyamatsu, H. et al. | 1993
- 2127
-
Layer structure evaluation of multilayer x‐ray mirror by combination of focused ion beam etching and transmission electron microscopyNakajima, Kunio / Sudo, Shuzo / Yakushiji, Makoto / Ishii, Takayuki / Aoki, Sadao et al. | 1993
- 2130
-
Hafnium dioxide etch‐stop layer for phase‐shifting masksShih, K. K. / Chieu, T. C. / Dove, D. B. et al. | 1993
- 2132
-
Photo‐ and electron‐beam lithography sharing common stencilKrupenin, V. A. / Lotkhov, S. V. / Vyshenskii, S. V. et al. | 1993
- 2137
-
Temperature measurement for scanning tunnel microscope samples using a detachable thermocoupleJohn, Kevin D. / Wan, K. J. / Yates, John T. et al. | 1993
- 2155
-
Lithographic patterning of self‐assembled filmsCalvert, Jeffrey M. et al. | 1993
- 2164
-
Alignment signal failure detection and recovery in real timeProgler, C. J. / Chen, A. C. / Hughlett, E. et al. | 1993
- 2175
-
Marks for alignment and registration in projection electron lithographyFarrow, R. C. / Liddle, J. A. / Berger, S. D. / Huggins, H. A. / Kraus, J. S. / Camarda, R. M. / Tarascon, R. G. / Jurgensen, C. W. / Kola, R. R. / Fetter, L. et al. | 1993
- 2179
-
Improvement of heterodyne alignment technique for x‐ray steppersKoga, K. / Itoh, T. / Kusumoto, S. / Araki, K. / Yasui, J. / Takeuchi, H. / Aoki, S. et al. | 1993
- 2183
-
Confocal filtering of the instantaneous image in scanned darkfield alignmentRosenbluth, A. E. / Progler, C. / Fullenbaum, M. et al. | 1993
- 2191
-
Novel on‐axis interferometric alignment method with sub‐10 nm precisionMoel, A. / Moon, E. E. / Frankel, R. D. / Smith, Henry I. et al. | 1993
- 2195
-
Focused‐ion beam induced deposition of copperDella Ratta, Anthony D. / Melngailis, John / Thompson, Carl V. et al. | 1993
- 2200
-
Focused ion beam XeF2 etching of materials for phase‐shift masksHarriott, L. R. et al. | 1993
- 2204
-
Selective electroless plating on electron beam seeded nanostructuresLee, K. L. / Thomas, R. R. / Viehbeck, A. / O’Sullivan, E. J. M. et al. | 1993
- 2210
-
Modification of polymer surfaces and the fabrication of submicron‐scale functionalized structures by deep‐ultraviolet and electron‐beam lithographyWybourne, M. N. / Wu, J. C. / Yan, Mingdi / Cai, Sui Xiong / Keana, John F. W. et al. | 1993
- 2214
-
Characteristics of ion beam assisted etching of GaAs: Surface stoichiometryKosugi, Toshihiko / Iwase, Hiroaki / Gamo, Kenji et al. | 1993
- 2219
-
Resolution limits in electron‐beam induced tungsten depositionKohlmann‐von Platen, K. T. / Chlebek, J. / Weiss, M. / Reimer, K. / Oertel, H. / Brünger, W. H. et al. | 1993
- 2224
-
High‐resolution reactive ion etching and damage effects in the Si/GexSi1−x systemCheung, R. / Zijlstra, T. / van der Drift, E. / Geerligs, L. J. / Verbruggen, A. H. / Werner, K. / Radelaar, S. et al. | 1993
- 2229
-
Fabrication of silicon nanostructures with electron‐beam lithography using AlN as a dry‐etch durable resistTada, Tetsuya / Kanayama, Toshihiko et al. | 1993
- 2233
-
Controlling the profile of nanostructuresTsutsui, K. / Hu, E. L. / Wilkinson, C. D. W. et al. | 1993
- 2237
-
Very low damage etching of GaAsMurad, S. K. / Wilkinson, C. D. W. / Wang, P. D. / Parkes, W. / Sotomayor‐Torres, C. M. / Cameron, N. et al. | 1993
- 2244
-
Selectively dry gate recessed GaAs metal–semiconductor field‐effect transistors, high electron mobility transistors, and monolithic microwave integrated circuitsCameron, N. I. / Ferguson, S. / Taylor, M. R. S. / Beaumont, S. P. / Holland, M. / Tronche, C. / Soulard, M. / Ladbrooke, P. H. et al. | 1993
- 2249
-
Characterization of low energy ion‐induced damage using the multiple quantum well probe technique with an intervening superlatticeGreen, D. L. / Hu, E. L. / Petroff, P. M. / Liberman, V. / Nooney, M. / Martin, R. et al. | 1993
- 2254
-
Fabrication of parallel quantum wires in GaAs/AlGaAs heterostructures using AlAs etch stop layersGrundbacher, R. / Chang, H. / Hannan, M. / Adesida, I. et al. | 1993
- 2258
-
Characteristics of selective reactive ion etching of InGaAs/InAlAs heterostructures using HBr plasmaAgarwala, Sambhu / Adesida, Ilesanmi / Caneau, Catherine / Bhat, Rajaram et al. | 1993
- 2262
-
300 kHz pulse plasma etching of GaAs using a mixture of ClCH3 and H2Law, V. J. / Tewordt, M. / Clary, D. C. / Jones, G. A. C. et al. | 1993
- 2266
-
Characteristics of in situ Cl2 etched/regrown GaAs/GaAs interfacesMui, D. S. L. / Strand, T. A. / Thibeault, B. J. / Coldren, L. A. / Petroff, P. M. / Hu, E. L. et al. | 1993
- 2270
-
Etching on silicon membranes for sub‐0.25‐μm x‐ray mask manufacturingMuller, K. Paul / Eib, Nicholas K. / Faure, Thomas B. et al. | 1993
- 2275
-
Controllable layer‐by‐layer etching of III–V compound semiconductors with an electron cyclotron resonance sourceKo, K. K. / Pang, S. W. et al. | 1993
- 2280
-
Highly selective reactive ion etch process for InP‐based device fabrication using methane/hydrogen/argonSchramm, Jeff E. / Hu, Evelyn L. / Merz, James L. / Brown, Julia J. / Melendes, Melissa A. / Thompson, Mark A. / Brown, April S. et al. | 1993
- 2284
-
Multilayer resist dry etching technology for deep submicron lithographyTokashiki, Ken / Sato, Kiyoyuki / Aoto, Nahomi / Ikawa, Eiji et al. | 1993
- 2288
-
Low‐damage electron‐beam‐assisted dry etching of GaAs and AlGaAs using electron cyclotron resonance plasma electron sourceWatanabe, Heiji / Matsui, Shinji et al. | 1993
- 2294
-
Particle–particle interaction effects in image projection lithography systemsBerger, S. D. / Eaglesham, D. J. / Farrow, R. C. / Freeman, R. R. / Kraus, J. S. / Liddle, J. A. et al. | 1993
- 2299
-
Limits of low‐energy electron opticsHordon, Laurence S. / Huang, Zhirong / Maluf, Nadim / Browning, Ray / Pease, R. Fabian W. et al. | 1993
- 2304
-
Large‐area electron‐beam sourceLivesay, W. R. et al. | 1993
- 2309
-
EL‐4 column and controlPetric, Paul F. / Gordon, Michael S. / Senesi, Joseph J. / Haire, Donald F. et al. | 1993
- 2315
-
Magnetic microlens with an atomically sharp field emitterTerris, B. D. / Züǵer, O. / Rugar, D. et al. | 1993
- 2319
-
Effect of beam condition in variable‐shaped electron‐beam direct writing for 0.25 μm and belowHirasawa, Satomi / Nakajima, Ken / Tamura, Takao / Aizaki, Naoaki et al. | 1993
- 2323
-
Continuous writing method for high speed electron‐beam direct writing system HL‐800DKawano, Masamichi / Mizuno, Kazui / Yoda, Haruo / Sakitani, Yoshio / Andou, Kimiaki / Saitou, Norio et al. | 1993
- 2327
-
Oxygen processed field emission tips for microcolumn applicationsKim, H. S. / Yu, M. L. / Staufer, U. / Muray, L. P. / Kern, D. P. / Chang, T. H. P. et al. | 1993
- 2332
-
EL‐4, a new generation electron‐beam lithography systemPfeiffer, H. C. / Davis, D. E. / Enichen, W. A. / Gordon, M. S. / Groves, T. R. / Hartley, J. G. / Quickle, R. J. / Rockrohr, J. D. / Stickel, W. / Weber, E. V. et al. | 1993
- 2342
-
Spatial‐phase‐locked electron‐beam lithography: Initial test resultsFerrera, Juan / Wong, Vincent V. / Rishton, S. / Boegli, V. / Anderson, E. H. / Kern, D. P. / Smith, Henry I. et al. | 1993
- 2346
-
Electron‐beam direct writing system EX‐8D employing character projection exposure methodHattori, K. / Yoshikawa, R. / Wada, H. / Kusakabe, H. / Yamaguchi, T. / Magoshi, S. / Miyagaki, A. / Yamasaki, S. / Takigawa, T. / Kanoh, M. et al. | 1993
- 2352
-
Laboratory setup for projection electron lithography and a Monte Carlo simulation of scattering mask transmissionMiller, Peter D. / Gibson, J. Murray / Bleeker, Arno J. / Liddle, J. Alex et al. | 1993
- 2357
-
Electron‐beam block exposure system for a 256 M dynamic random access memorySakamoto, K. / Fueki, S. / Yamazaki, S. / Abe, T. / Kobayashi, K. / Nishino, H. / Satoh, T. / Takemoto, A. / Ookura, A. / Oono, M. et al. | 1993
- 2362
-
Integration of microstructures onto negative electron affinity cathodes: Fabrication and operation of an addressable negative electron affinity cathodeSantos, Edval J. P. / MacDonald, Noel C. et al. | 1993
- 2367
-
Proximity effects in low‐energy electron‐beam lithographyStark, T. J. / Edenfeld, K. M. / Griffis, D. P. / Radzimski, Z. J. / Russell, P. E. et al. | 1993
- 2373
-
Multiple beam‐shaping diaphragm for efficient exposure of gratingsElsner, H. / Hahmann, P. / Dahm, G. / Koops, H. W. P. et al. | 1993
- 2378
-
Electrodynamics of fast beam blankersGesley, M. / Colby, D. / Raymond, F. / McClure, D. / Abboud, F. et al. | 1993
- 2386
-
Constructive three‐dimensional lithography with electron‐beam induced deposition for quantum effect devicesKoops, Hans W. P. / Kretz, Johannes / Rudolph, Michael / Weber, Markus et al. | 1993
- 2390
-
Feasibility study of new graybeam writing strategies for raster scan mask generationMurray, Andrew / Abboud, Frank / Raymond, Frederick / Berglund, C. N. et al. | 1993
- 2397
-
Use of a variable shaped beam electron lithography system for diffractive optics components manufacturingTrotel, Jacques et al. | 1993
- 2400
-
Intelligent design splitting in the stencil mask technology used for electron‐ and ion‐beam lithographyBehringer, U. / Engelke, H. et al. | 1993
- 2404
-
Edge roughness of a 200‐nm pitch resist pattern fabricated by ion projection lithographyBrünger, W. H. / Blaschke, J. / Torkler, M. / Buchmann, L.‐M. et al. | 1993
- 2409
-
Projection ion beam lithographyLöschner, H. / Stengl, G. / Chalupka, A. / Fegerl, J. / Fischer, R. / Hammel, E. / Lammer, G. / Malek, L. / Nowak, R. / Traher, C. et al. | 1993
- 2416
-
Focused‐ion‐beam damage‐etch patterning for isolation of quantum structures in AlGaAs/GaAsTempleton, I. M. / Fallahi, M. / Charbonneau, S. / Champion, H. G. / Allard, L. B. et al. | 1993
- 2420
-
New characterization method of ion current‐density profile based on damage distribution of Ga+ focused‐ion beam implantation in GaAsAssayag, G. Ben / Vieu, C. / Gierak, J. / Sudraud, P. / Corbin, A. et al. | 1993
- 2427
-
Effects of focused ion beam reticle repair on optical lithography at i‐line and deep ultraviolet wavelengthsPrewett, P. D. / Martin, B. / Eastwood, A. W. / Watson, J. G. et al. | 1993
- 2432
-
Ion exposure characterization of a chemically amplified epoxy resistStumbo, D. P. / Wolfe, J. C. et al. | 1993
- 2436
-
Quasiperiodic nanostructures in focused ion beam deposited tungsten at high angles of incidenceXu, Xin / Melngailis, John et al. | 1993
- 2441
-
Investigations of artificial nanostructures and lithography techniques with a scanning probe microscopeGriesinger, U. A. / Kaden, C. / Lichtenstein, N. / Hommel, J. / Lehr, G. / Bergmann, R. / Menschig, A. / Schweizer, H. / Hillmer, H. / Koops, H. W. P. et al. | 1993
- 2446
-
Optimization of aerial image qualityTurner, S. / Cerrina, F. et al. | 1993
- 2452
-
Time‐of‐flight electron spectrometer for voltage measurements on integrated circuitsDinnis, A. R. / Khursheed, A. et al. | 1993
- 2456
-
Metrology of high‐resolution resist structures on insulating substratesDi Fabrizio, E. / Grella, L. / Luciani, L. / Gentili, M. / Baciocchi, M. / Figliomeni, M. / Mastrogiacomo, L. / Maggiora, R. / Leonard, Q. / Cerrina, F. et al. | 1993
- 2463
-
Metrology for replicated x‐ray masks using an electron‐beam machineLuciani, L. / Di Fabrizio, E. / Grella, L. / Baciocchi, M. / Figliomeni, M. / Gentili, M. / Mastrogiacomo, L. / Maggiora, R. / Kraspenova, A. / Reilly, M. et al. | 1993
- 2468
-
Real‐time latent image monitoring during holographic fabrication of submicron diffraction gratingsGregus, Jeffrey A. / Green, Christian A. / Yoon, Euijoon / Ostermayer, Fred W. / Hayes, Todd R. / Pawelek, Richard / Gottscho, Richard A. / Naqvi, S. Sohail H. et al. | 1993
- 2473
-
Line profile measurement with a scanning probe microscopeGriffith, J. E. / Marchman, H. M. / Miller, G. L. / Hopkins, L. C. / Vasile, M. J. / Schwalm, S. A. et al. | 1993
- 2477
-
Simulation of x‐ray generation based on electron trajectory calculationKoshishiba, H. / Yoshimura, M. / Nakagawa, Y. et al. | 1993
- 2482
-
Metrology for phase‐shifting masksMarchman, H. M. / Vaidya, S. / Pierrat, C. / Griffith, J. et al. | 1993
- 2487
-
Schottky field emission based scanning Auger microprobeNarum, David H. et al. | 1993
- 2493
-
Fabrication of a novel split‐backgate transistor by in situ focused ion‐beam lithography and molecular‐beam epitaxial regrowthBrown, K. M. / Linfield, E. H. / Jones, G. A. C. / Ritchie, D. A. / Thompson, J. H. et al. | 1993
- 2497
-
Micromachining in III–V semiconductors using wet photoelectrochemical etchingKhare, Reena / Hu, Evelyn L. / Brown, Julia J. / Melendes, Melissa A. et al. | 1993
- 2502
-
Fabrication limits of nanometer T and Γ gates: Theory and experimentMaile, B. E. et al. | 1993
- 2509
-
Multiwavelength distributed Bragg reflector laser array fabricated using near field holographic printing with an electron‐beam generated phase grating maskTennant, D. M. / Koch, T. L. / Verdiell, J‐M. / Feder, K. / Gnall, R. P. / Koren, U. / Young, M. G. / Miller, B. I. / Newkirk, M. A. / Tell, B. et al. | 1993
- 2514
-
Fabrication of curved mirrors for visible semiconductor lasers using electron‐beam lithography and chemically assisted ion‐beam etchingUnger, P. / Boegli, V. / Buchmann, P. / Germann, R. et al. | 1993
- 2519
-
Fabrication of sub‐10 nm structures by lift‐off and by etching after electron‐beam exposure of poly(methylmethacrylate) resist on solid substratesChen, Wei / Ahmed, Haroon et al. | 1993
- 2524
-
10 nm Si pillars fabricated using electron‐beam lithography, reactive ion etching, and HF etchingFischer, Paul B. / Dai, Kevin / Chen, Erli / Chou, Stephen Y. et al. | 1993
- 2528
-
Design and analysis of InAs/AlSb ballistic constrictions for high temperature operation and low gate leakageKoester, S. J. / Bolognesi, C. R. / Hu, E. L. / Kroemer, H. / Rooks, M. J. / Snider, G. L. et al. | 1993
- 2532
-
Self‐limiting oxidation of Si nanowiresLiu, H. I. / Biegelsen, D. K. / Johnson, N. M. / Ponce, F. A. / Pease, R. F. W. et al. | 1993
- 2538
-
Integrated silicon process for microdynamic vacuum field emission cathodesZhang, Z. Lisa / MacDonald, Noel C. et al. | 1993
- 2544
-
Investigation of the longitudinal and lateral distribution of implantation induced damage in GaAs/InGaAs heterostructuresKieslich, A. / Doleschel, H. / Faller, F. / Forchel, A. / Stoffel, N. G. et al. | 1993
- 2548
-
Fabrication of freestanding structures and proposed applications in tunneling sensorsMoore, D. F. / Lutwyche, M. I. / Hoole, A. C. F. et al. | 1993
- 2552
-
Self‐aligned fabrication of arrays of back‐to‐back external 45° reflectors integrated with ridge‐waveguide lasers for surface‐emitting high‐power semiconductor laser sources in AlGaAs/GaAsPorkolab, G. A. / Wolf, E. D. et al. | 1993
- 2556
-
Optical analysis of quantum confined Stark effect in overgrown InGaAs/InP quantum wiresSchilling, O. / Forchel, A. / Kohl, A. / Brittner, S. et al. | 1993
- 2560
-
Multilayer resist process for asymmetric gate recess in field‐effect transistorsBallegeer, D. G. / Nummila, K. / Adesida, I. et al. | 1993
- 2565
-
New technique for computation and challenges for electron‐beam lithographyHuang, Xiaokang / Bazán, Greg / Bernstein, Gary H. et al. | 1993
- 2570
-
Ultrahigh resolution magnetic force microscope tip fabricated using electron beam lithographyFischer, Paul B. / Wei, Mark S. / Chou, Stephen Y. et al. | 1993
- 2574
-
Directly patterned low voltage planar tungsten lateral field emission structuresHoole, A. C. F. / Moore, D. F. / Broers, A. N. et al. | 1993
- 2579
-
Fabrication of mesoscopic structures by channeled ion implantation for the study of boundary scattering of electronsHornsey, R. I. / Cleaver, J. R. A. / Ahmed, H. et al. | 1993
- 2584
-
Fabrication and optical properties of InGaAs/InP quantum wires and dots with strong lateral quantization effectsIls, P. / Michel, M. / Forchel, A. / Gyuro, I. / Klenk, M. / Zielinski, E. et al. | 1993
- 2588
-
Fabrication of hard x‐ray phase zone plate by x‐ray lithographyKrasnoperova, A. A. / Xiao, J. / Cerrina, F. / Di Fabrizio, E. / Luciani, L. / Figliomeni, M. / Gentili, M. / Yun, W. / Lai, B. / Gluskin, E. et al. | 1993
- 2592
-
Effects of low energy ion exposure on modulation‐doped GaAs heterostructuresLi, F. / Spencer, G. F. / Wang, T. / Andrews, C. C. / Kirk, W. P. et al. | 1993
- 2597
-
Determination of acid diffusion rate in a chemically amplified resist with scanning tunneling microscope lithographyPerkins, F. Keith / Dobisz, Elizabeth A. / Marrian, Christie R. K. et al. | 1993
- 2603
-
Fabrication of Y‐gate, submicron gate length GaAs metal–semiconductor field effect transistorsRen, F. / Pearton, S. J. / Lothian, J. R. / Abernathy, C. R. et al. | 1993
- 2607
-
Integrated approach to quantum dot fabricationRishton, S. A. / Lee, Y. H. / Milkove, K. R. / Hong, J. M. / Boegli, V. / DeFranza, M. / Sivan, U. / Kern, D. P. et al. | 1993
- 2612
-
High performance sub‐0.1 μm silicon n‐metal–oxide–semiconductor transistors with composite metal/polysilicon gatesRishton, S. A. / Mii, Y. J. / Kern, D. P. / Taur, Y. / Lee, K. Y. / Lii, T. / Jenkins, K. / Quinlan, D. / Brown, T. / Danner, D. et al. | 1993
- 2615
-
Electron‐beam lithography for advanced device prototyping: Process tool metrologyRosenfield, M. G. / Thomson, M. G. R. / Coane, P. J. / Kwietniak, K. T. / Keller, J. / Klaus, D. P. / Volant, R. P. / Blair, C. R. / Tremaine, K. S. / Newman, T. H. et al. | 1993
- 2621
-
Ridge‐waveguide sidewall‐grating distributed feedback structures fabricated by x‐ray lithographyWong, Vincent V. / Choi, Woo‐Young / Carter, J. M. / Fonstad, C. G. / Smith, Henry I. / Chung, Y. / Dagli, N. et al. | 1993
- 2625
-
Fabrication of 100 nm T‐gates for monolithic microwave integrated circuits using x‐ray lithographyGupta, Nitin / Hector, Scott D. / Rhee, Kee W. / Smith, Henry I. et al. | 1993
- 2629
-
Focused ion beam interaction with a shallow two‐dimensional electron gasSoh, Yeong‐Ah / Snider, Gregory L. / Skvarla, Michael J. / Craighead, Harold G. et al. | 1993
- 2633
-
Diffraction gratings for measuring slow mode surface plasmon polaritonsTiberio, R. C. / Pugh, G. M. / Sjodin, T. / Reed, B. W. / Sparks, P. D. et al. | 1993
- 2637
-
Nanofabrication of photonic lattice structures in GaAs/AlGaAsWendt, J. R. / Vawter, G. A. / Gourley, P. L. / Brennan, T. M. / Hammons, B. E. et al. | 1993
- 2641
-
Low‐loss beamwidth transformers on InP with reduced requirements on lithographic resolutionZengerle, R. / Brückner, H. J. / Hübner, B. / Weiershausen, W. et al. | 1993
- 2645
-
Etched‐quartz fabrication issues for a 0.25 μm phase‐shifted dynamic random access memory applicationFerguson, R. / Martino, R. / Budd, R. / Hughes, G. / Skinner, J. / Staples, J. / Ausschnitt, C. / Weed, J. et al. | 1993
- 2651
-
Mask assisted off‐axis illumination technique for random logicGarofalo, J. / Biddick, C. J. / Kostelak, R. L. / Vaidya, S. et al. | 1993
- 2659
-
Edge location errors in Cr‐less and rim‐type phase‐shifting lithographyWeiss, M. / Henke, W. / Ronse, K. et al. | 1993
- 2665
-
Evaluation of repair phase and size tolerance for a phase‐shift maskOhtsuka, Hiroshi / Kuwahara, Kazuyuki / Onodera, Toshio et al. | 1993
- 2669
-
Phase‐shifting lithography: Maskmaking and its applicationWatanabe, Hisashi / Todokoro, Yoshihiro et al. | 1993
- 2675
-
Optical projection system for gigabit dynamic random access memoriesJeong, H. / Markle, D. A. / Owen, G. / Pease, R. F. W. / Grenville, A. et al. | 1993
- 2680
-
Key technologies in lower submicron lithography: Ultimate super resolution imaging system and chemically amplified resist using the self‐solubility acceleration effectNakase, Makoto / Inoue, Soichi / Fujisawa, Tadahito / Kihara, Naoko / Ushirogouchi, Tohru et al. | 1993
- 2686
-
Direct aerial image measurement as a method of testing high numerical aperture microlithographic lensesPartlo, William N. / Fields, Charles H. / Oldham, William G. et al. | 1993
- 2692
-
Performance of 0.2 μm optical lithography using KrF and ArF excimer laser sourcesYamashita, Kazuhiro / Endo, Masayuki / Sasago, Masaru / Nomura, Noboru / Nagano, Hiroyuki / Mizuguchi, Shinichi / Ono, Takuhiro / Sato, Takeo et al. | 1993
- 2697
-
Optical properties of hydrogenated amorphous‐carbon film for attenuated phase‐shift mask applicationsCallegari, Alessandro / Pomerene, Andrew T. / Hovel, Harold J. / Babich, Edward D. / Purushothaman, Sampath / Shaw, Jane M. et al. | 1993
- 2700
-
Image monitor for Markle–Dyson opticsGrenville, A. / Owen, G. / Pease, R. F. W. et al. | 1993
- 2705
-
Printing of phase‐shifting mask defectsKostelak, R. L. / Pierrat, C. / Garofalo, J. G. / Vaidya, S. et al. | 1993
- 2714
-
Advanced dynamic process simulation for an excimer laser lithographyOhfuji, Takeshi / Nalamasu, Omkaram / Stone, Douglas R. et al. | 1993
- 2720
-
Evaluation of depth‐of‐focus in photolithography at 193 and 248 nm for feature sizes of 0.25 μm and belowRothschild, M. / Doran, S. P. / Barouch, E. / Hollerbach, U. / Orszag, S. A. et al. | 1993
- 2725
-
Process issue improvement of surface image transfer technique: Depth‐of‐focus characteristics and their comparison with simulation resultsTomo, Y. / Ogawa, T. / Nagayama, T. / Kimura, M. et al. | 1993
- 2733
-
Reduction and elimination of proximity effectsDobisz, E. A. / Marrian, C. R. K. / Salvino, R. E. / Ancona, M. A. / Perkins, F. K. / Turner, N. H. et al. | 1993
- 2741
-
PROXECCO—Proximity effect correction by convolutionEisenmann, Hans / Waas, Thomas / Hartmann, Hans et al. | 1993
- 2746
-
Efficiency of electron‐beam proximity effect correctionGroves, T. R. et al. | 1993
- 2754
-
Analytical evaluation of the energy deposition function in electron‐beam lithography in the case of a composite substrateRaptis, I. / Glezos, N. / Hatzakis, M. et al. | 1993
- 2758
-
Two methods of experimental evaluation of long‐range proximity function components in electron‐beam lithographyBogdanov, Alexei L. / Polyakov, Andrei et al. | 1993
- 2762
-
Fast proximity effect correction: An extension of PYRAMID for thicker resistsCook, Brian D. / Lee, Soo‐Young et al. | 1993
- 2768
-
Incident dose modification for proximity effect correctionThomson, M. G. R. et al. | 1993
- 2773
-
Chemical amplification electron beam positive resist process free from surface insoluble layerFujino, Takeshi / Maeda, Hiroshi / Kumada, Teruhiko / Moriizumi, Koichi / Kubota, Shigeru / Koezuka, Hiroshi / Morimoto, Hiroaki / Watakabe, Yaichiro / Tsubouchi, Natfuro et al. | 1993
- 2779
-
Single component deep‐ultraviolet and x‐ray resists: The lithographic behavior of poly[(2‐methyl‐4‐t‐butoxycarbonyloxystyrene)sulfone] and poly[(3‐chloro‐4‐t‐butoxycarbonyloxystyrene)sulfone]Neenan, Thomas X. / Kumar, Uday / Kometani, Janet M. / Novembre, Anthony E. et al. | 1993
- 2783
-
Single‐layer chemically amplified photoresists for 193‐nm lithographyWallraff, G. M. / Allen, R. D. / Hinsberg, W. D. / Larson, C. F. / Johnson, R. D. / DiPietro, R. / Breyta, G. / Hacker, N. / Kunz, R. R. et al. | 1993
- 2789
-
New silicon‐rich silylating reagents for dry‐developed positive‐tone deep‐ultraviolet lithographyWheeler, David R. / Hutton, Skip / Stein, Susan / Baiocchi, Frank / Cheng, May / Taylor, Gary et al. | 1993
- 2794
-
Water soluble conducting polyanilines: Applications in lithographyAngelopoulos, Marie / Patel, Niranjan / Shaw, Jane M. / Labianca, Nancy C. / Rishton, Stephen A. et al. | 1993
- 2798
-
Relationship between resist performance and reaction order in a chemically amplified resist systemFedynyshyn, Theodore H. / Szmanda, Charles R. / Blacksmith, Robert F. / Houck, William E. / Root, Jonathan C. et al. | 1993
- 2807
-
Evaluation and application of a very high performance chemically amplified resist for electron‐beam lithographyLee, K. Y. / Huang, W. S. et al. | 1993
- 2812
-
Development of positive electron‐beam resist for 50 kV electron‐beam direct‐writing lithographySakamizu, Toshio / Yamaguchi, Hidenori / Shiraishi, Hiroshi / Murai, Fumio / Ueno, Takumi et al. | 1993
- 2818
-
Imaging dissolution rate monitor: Mapping the photoresist responseSullivan, Monroe / Taylor, James W. et al. | 1993
- 2823
-
Self‐assembled monolayer electron‐beam resists on GaAs and SiO2Lercel, M. J. / Tiberio, R. C. / Chapman, P. F. / Craighead, H. G. / Sheen, C. W. / Parikh, A. N. / Allara, D. L. et al. | 1993
- 2829
-
Effect of low‐solubility surface layer on development of AZ‐PF514Krasnoperova, Azalia A. / Turner, Stephen W. / Ocola, Leo / Cerrina, Franco et al. | 1993
- 2834
-
Patterning of x‐ray masks using the negative‐acting resist P(SI‐CMS)Mixon, D. A. / Novembre, A. E. / Tai, W. W. / Jurgensen, C. W. / Frackoviak, J. / Trimble, L. E. / Kola, R. R. / Celler, G. K. et al. | 1993
- 2839
-
Parametric modeling of photoelectron effects in x‐ray lithographyOcola, L. E. / Cerrina, F. et al. | 1993
- 2845
-
Optimization design program for chemically amplified resist processPan, S.‐W. / Reilly, M. T. / Taylor, J. W. / Cerrina, F. et al. | 1993
- 2850
-
Soft x‐ray photochemistry of chemisorbed self‐assembled monolayersSuh, D. / Simons, J. K. / Taylor, J. W. / Koloski, T. S. / Calvert, J. M. et al. | 1993
- 2855
-
Dissolution rate properties of three‐component deep‐ultraviolet positive photoresistsThackeray, James W. / Denison, Mark / Fedynyshyn, Theodore H. / Georger, Jacque / Mori, J. Michael / Orsula, George W. et al. | 1993
- 2862
-
Simulation of locally enhanced three‐dimensional diffusion in chemically amplified resistsZuniga, M. / Wallraff, G. / Tomacruz, E. / Smith, B. / Larson, C. / Hinsburg, W. D. / Neureuther, A. R. et al. | 1993
- 2867
-
Insolubilization mechanism of chemically amplified negative photoresistsYamaguchi, Atsumi / Kishimura, Shinji / Tsujita, Kouichiro / Morimoto, Hiroaki / Tsukamoto, Katsuhiro / Nagata, Hitoshi et al. | 1993
- 2872
-
Study of electron beam patterning of resist on tungsten x‐ray masksCummings, K. D. / Resnick, D. J. / Frackoviak, J. / Kola, R. R. / Trimble, L. E. / Grant, B. / Silverman, S. / Haas, L. / Jennings, B. et al. | 1993
- 2876
-
Patterning issues of 256MB dynamic random access memory x‐ray masksKoek, B. / Jennings, B. / Grant, R. et al. | 1993
- 2881
-
Effect of mask absorber thickness on x‐ray exposure latitude and resolutionMcCord, M. A. / Wagner, A. / Seeger, D. et al. | 1993
- 2888
-
Overlay performance of x‐ray steppers in IBM Advance Lithography FacilityProgler, C. J. / Chen, A. C. / Gunther, T. A. / Kaiser, P. / Cooper, K. A. / Hughlett, R. E. et al. | 1993
- 2897
-
Sub‐half‐micron metal–oxide–semiconductor device fabrication using a compact synchrotron radiation lithography systemFujii, K. / Tsuboi, S. / Yoshihara, T. / Tanaka, Y. / Suzuki, K. / Setoguchi, S. / Miyatake, T. et al. | 1993
- 2902
-
Experimental study of aerial images in x‐ray lithographyGuo, Jerry Z. Y. / Leonard, Q. / Cerrina, F. / Di Fabrizio, E. / Luciani, L. / Gentili, M. / Frank, J. et al. | 1993
- 2906
-
Fabrication of flip‐bonded mesa masks for x‐ray lithographySchattenburg, M. L. / Polce, N. A. / Smith, Henry I. / Stein, R. et al. | 1993
- 2910
-
Fabrication of high performance 512K static‐random access memories in 0.25 μm complementary metal–oxide semiconductor technology using x‐ray lithographyViswanathan, R. / Seeger, D. / Bright, A. / Bucelot, T. / Pomerene, A. / Petrillo, K. / Blauner, P. / Agnello, P. / Warlaumont, J. / Conway, J. et al. | 1993
- 2920
-
X‐ray mask membrane motion in narrow gap lithography: Hydrodynamic model and experimentYanof, A. W. / Zipfel, G. L. / Moon, E. E. et al. | 1993
- 2926
-
Repair of soft‐x‐ray optical elements by stripping and redeposition of Mo/Si reflective coatingsEarly, K. / Windt, D. L. / Waskiewicz, W. K. / Wood, O. R. / Tennant, D. M. et al. | 1993
- 2930
-
Physical properties of the x‐ray membrane materialsEl Khakani, M. A. / Chaker, M. et al. | 1993
- 2938
-
Development of an electron‐beam process for the fabrication of x‐ray nanomasksGentili, M. / Grella, L. / Di Fabrizio, E. / Luciani, L. / Baciocchi, M. / Figliomeni, M. / Maggiora, R. / Mastrogiacomo, L. / Cerrina, F. et al. | 1993
- 2943
-
Pattern formation in amorphous WNx by low temperature electron cyclotron resonance etching for fabrication of x‐ray maskInoue, Takayoshi / Kanayama, Toshihiko / Komuro, Masanori et al. | 1993
- 2947
-
Stress and microstructure of sputter‐deposited thin films: Molecular dynamics simulations and experimentFang, C. C. / Jones, F. / Kola, R. R. / Celler, G. K. / Prasad, V. et al. | 1993
- 2953
-
Practical considerations in x‐ray mask mounting methodologyLaird, D. L. / Laudon, M. F. / Engelstad, R. L. et al. | 1993
- 2958
-
Resolution limits and process latitude of x‐ray mask fabricationMcCord, M. A. / Wagner, A. / Donohue, T. et al. | 1993
- 2964
-
Defect coverage profile and propagation of roughness of sputter‐deposited Mo/Si multilayer coating for extreme ultraviolet projection lithographyNguyen, K. B. / Nguyen, T. D. et al. | 1993
- 2971
-
X‐ray mask replication using square synchrotron radiation illuminationReilly, M. / Wells, G. M. / Guo, J. / Wallace, J. P. / Edwards, N. / Cerrina, F. / Melngailis, J. et al. | 1993
- 2976
-
Performance of a wide‐field flux delivery system for synchrotron x‐ray lithographySilverman, J. P. / Archie, C. N. / Oberschmidt, J. M. / Rippstein, R. P. et al. | 1993
- 2981
-
Simultaneous optimization of spectrum, spatial coherence, gap, feature bias, and absorber thickness in synchrotron‐based x‐ray lithographyHector, Scott D. / Smith, Henry I. / Schattenburg, M. L. et al. | 1993
- 2986
-
Soft x‐ray production from laser produced plasmas for lithography applicationsSpitzer, R. C. / Kauffman, R. L. / Orzechowski, T. / Phillion, D. W. / Cerjan, C. et al. | 1993
- 2990
-
Low stress and optically transparent chromium oxide layer for x‐ray mask makingTrube, Jutta / Yabe, Hideki / Aya, Sunao / Marumoto, Kenji / Matsui, Yasuji et al. | 1993
- 2994
-
X‐ray mask fabrication using advanced optical lithographyTsuboi, S. / Suzuki, K. et al. | 1993
- 2997
-
X‐ray stepper aiming at 0.2 μm synchrotron orbital radiation lithographyUchida, Norio / Kuwabara, Osamu / Ishibashi, Yoriyuki / Kikuiri, Nobutaka / Hirano, Ryoichi / Nishida, Jun / Nishizaka, Takeshi / Kikuchi, Yukiko / Yoshino, Hisakazu et al. | 1993
- 3003
-
Polycapillary collimator for point source proximity x‐ray lithographyVartanian, M. / Youngman, R. / Gibson, D. / Drumheller, J. / Frankel, R. et al. | 1993
- 3008
-
Evaluation of beryllium foils for x‐ray lithography beamlinesWells, G. M. / Brodsky, E. L. / Cerrina, F. / Waldo, W. G. et al. | 1993