Scalability and reliability issues of Ti/HfOx-based 1T1R bipolar RRAM: Occurrence, mitigation, and solution (Englisch)
- Neue Suche nach: Rahaman, Sk. Ziaur
- Neue Suche nach: Lee, Heng-Yuan
- Neue Suche nach: Chen, Yu-Sheng
- Neue Suche nach: Lin, Yu-De
- Neue Suche nach: Chen, Pang-Shiu
- Neue Suche nach: Chen, Wei-Su
- Neue Suche nach: Wang, Pei-Hua
- Neue Suche nach: Rahaman, Sk. Ziaur
- Neue Suche nach: Lee, Heng-Yuan
- Neue Suche nach: Chen, Yu-Sheng
- Neue Suche nach: Lin, Yu-De
- Neue Suche nach: Chen, Pang-Shiu
- Neue Suche nach: Chen, Wei-Su
- Neue Suche nach: Wang, Pei-Hua
In:
Applied Physics Letters
;
110
, 21
;
5
;
2017
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Scalability and reliability issues of Ti/HfOx-based 1T1R bipolar RRAM: Occurrence, mitigation, and solution
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Beteiligte:Rahaman, Sk. Ziaur ( Autor:in ) / Lee, Heng-Yuan ( Autor:in ) / Chen, Yu-Sheng ( Autor:in ) / Lin, Yu-De ( Autor:in ) / Chen, Pang-Shiu ( Autor:in ) / Chen, Wei-Su ( Autor:in ) / Wang, Pei-Hua ( Autor:in )
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Erschienen in:Applied Physics Letters ; 110, 21 ; 5
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Verlag:
- Neue Suche nach: AIP Publishing LLC
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Erscheinungsdatum:22.05.2017
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Format / Umfang:5 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 110, Ausgabe 21
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