A review of frequency measurements of optically pumped lasers from 0.1 to 8 THz (Englisch)
Nationallizenz
- Neue Suche nach: Inguscio, M.
- Neue Suche nach: Moruzzi, G.
- Neue Suche nach: Evenson, K. M.
- Neue Suche nach: Jennings, D. A.
- Neue Suche nach: Inguscio, M.
- Neue Suche nach: Moruzzi, G.
- Neue Suche nach: Evenson, K. M.
- Neue Suche nach: Jennings, D. A.
In:
Journal of Applied Physics
;
60
, 12
;
R161-R192
;
1986
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:A review of frequency measurements of optically pumped lasers from 0.1 to 8 THz
-
Beteiligte:Inguscio, M. ( Autor:in ) / Moruzzi, G. ( Autor:in ) / Evenson, K. M. ( Autor:in ) / Jennings, D. A. ( Autor:in )
-
Erschienen in:Journal of Applied Physics ; 60, 12 ; R161-R192
-
Verlag:
- Neue Suche nach: American Institute of Physics
-
Erscheinungsdatum:15.12.1986
-
Format / Umfang:32 pages
-
ISSN:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Elektronische Ressource
-
Sprache:Englisch
-
Schlagwörter:
-
Datenquelle:
Inhaltsverzeichnis – Band 60, Ausgabe 12
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 4051
-
Quenching of NF singlet states in a hybrid chemical‐laser systemBenard, D. J. / Chowdhury, M. A. / Pritt, A. T. et al. | 1986
- 4059
-
Direct measurement of the energy spectrum of an intense proton beamLeeper, R. J. / Lee, J. R. / Kissel, L. / Johnson, D. J. / Stygar, W. A. / Hebron, D. E. et al. | 1986
- 4064
-
Comparisons of the different configurations of the second‐order reflection gratingPark, Wee Sang / Seshadri, S. R. et al. | 1986
- 4077
-
Upconversion‐pumped infrared erbium laserPollack, S. A. / Chang, D. B. / Moise, N. L. et al. | 1986
- 4087
-
Room‐temperature optically pumped laser oscillation at 2.07 μm from Ga0.85In0.15As0.13Sb0.87/ Al0.4Ga0.6As0.035Sb0.965 double heterostructures grown by molecular‐beam epitaxy on GaSb substratesvan der Ziel, J. P. / Chiu, T. H. / Tsang, W. T. et al. | 1986
- 4090
-
Scalar scattering characteristics of a periodic, impenetrable surface: Effect of surface modeling errorsLakhtakia, Akhlesh / Varadan, Vijay K. / Varadan, Vasundara V. et al. | 1986
- 4095
-
Propagation of intense ion beams across a plasma‐filled magnetic cuspBusby, K. O. / Greenly, J. B. / Hammer, D. A. / Nakagawa, Y. / Pedrow, P. D. et al. | 1986
- 4102
-
Laser‐induced fluorescence study of silicon etching process: Detection of SiF2 and CF2 radicalsMatsumi, Yutaka / Toyoda, Satoru / Hayashi, Toshio / Miyamura, Masao / Yoshikawa, Hideshi / Komiya, Souji et al. | 1986
- 4109
-
Some characteristics of the hollow anode glowMiljevic´, Vujo I. et al. | 1986
- 4113
-
A model of radio frequency planar dischargesPointu, A. M. et al. | 1986
- 4119
-
Propagation of a mildly relativistic electron beam at sub‐Torr pressuresSmith, J. R. / Schneider, R. F. / Rhee, M. J. / Uhm, H. S. / Namkung, W. et al. | 1986
- 4127
-
Anode discharge mode and cathodic plasma state in high‐current vacuum arcsToya, H. / Uchida, Y. / Hayashi, T. / Murai, Y. et al. | 1986
- 4133
-
Emitter tests in an open thermionic converter with vapor injection through the collectorWriedt, Susen / Mo¨ller, Kenneth / Holmlid, Leif et al. | 1986
- 4136
-
High‐temperature hardness of Ga1−xInxAsGuruswamy, S. / Hirth, J. P. / Faber, K. T. et al. | 1986
- 4141
-
Effect of thermal relaxation and low‐temperature irradiation on the chemical short‐range order of amorphous Zr‐Fe alloysWecker, J. / Freyhardt, H. C. / Adrian, H. / Klaumu¨nzer, S. et al. | 1986
- 4150
-
Disordering of AlAs‐GaAs superlattices by Si and S implantation at different implant temperaturesDobisz, E. A. / Tell, B. / Craighead, H. G. / Tamargo, M. C. et al. | 1986
- 4154
-
Vacancy self‐diffusion in a screw dislocation in a simple cubic latticeStark, J. P. et al. | 1986
- 4160
-
Theory of thin‐film orientation by ion bombardment during depositionBradley, R. Mark / Harper, James M. E. / Smith, David A. et al. | 1986
- 4165
-
The occurrence of cross hatch during GaAs homoepitaxyCunningham, J. E. / Chiu, T. H. / Ourmazd, A. / Shah, J. / Tsang, W. T. et al. | 1986
- 4169
-
Influence of substrate structure on the growth of hydrogenated amorphous silicon studied by in situ ellipsometryCollins, R. W. / Cavese, J. M. et al. | 1986
- 4177
-
Amorphous diffusion barriers in Al‐Si and Au‐Si contactsHung, L. S. / Colgan, E. G. / Mayer, J. W. et al. | 1986
- 4182
-
Doping studies using thermal beams in chemical‐beam epitaxyTsang, W. T. / Tell, B. / Ditzenberger, J. A. / Dayem, A. H. et al. | 1986
- 4186
-
Bulk electron traps in zinc oxide varistorsCordaro, J. F. / Shim, Y. / May, J. E. et al. | 1986
- 4191
-
Investigation of trapping states in a Nb‐doped rutile by admittance spectroscopyKobayashi, K. / Takata, M. / Fujimura, Y. / Okamoto, S. et al. | 1986
- 4197
-
Excitation‐energy dependence of electron lifetime in phosphorus‐doped hydrogenated amorphous siliconOheda, Hidetoshi et al. | 1986
- 4204
-
Effect of a‐SiNx:H composition on band bending near the interface of a‐Si:H/a‐SiNx:H layered structuresHiranaka, Kouichi / Yoshimura, Tetsuzo / Yamaguchi, Tadahisa / Yanagisawa, Shintaro et al. | 1986
- 4209
-
Ambient‐induced surface effects on InP and GaAsLester, S. D. / Kim, T. S. / Streetman, B. G. et al. | 1986
- 4215
-
Formation and properties of very high‐conductivity CdTe film made by evaporationSuzuki, K. / Ema, Y. / Hayashi, T. et al. | 1986
- 4218
-
Noise characteristics of a dc SQUID with a resistively shunted inductance. II. Optimum dampingEnpuku, K. / Yoshida, K. / Kohjiro, S. et al. | 1986
- 4224
-
Preferential site occupation and magnetic structure of Nd2(CoxFe1−x)14B systemsHerbst, J. F. / Yelon, W. B. et al. | 1986
- 4230
-
Magnetic permeability of a simple cubic lattice of conducting magnetic spheresLam, John et al. | 1986
- 4236
-
Directional dependence of the demagnetizing energy in imperfect thin magnetic filmsYafet, Y. / Gyorgy, E. M. / Walker, L. R. et al. | 1986
- 4240
-
Fundamental processes in the laser‐triggered electrical breakdown of gases: Unconventional geometriesDougal, R. A. / Williams, P. F. et al. | 1986
- 4248
-
Analysis of fluorescence line shapes for free‐to‐bound transitions in semiconductorsBartram, R. H. / Vassell, M. O. / Zemon, S. et al. | 1986
- 4253
-
Photoluminescence spectra and line‐shape synthesis of a conduction‐band‐to‐deep‐acceptor transition in GaAs:SnZemon, S. / Vassell, M. O. / Lambert, G. / Bartram, R. H. et al. | 1986
- 4259
-
Electron spin resonance studies of the temperature dependence of the ZnS visible photoluminescenceCieplak, M. Z. / Godlewski, M. et al. | 1986
- 4262
-
1.5‐μm infrared excitation of visible luminescent in Y1−xErxF3 and Y1−x−yErxTmyF3 via resonant‐energy transfervan der Ziel, J. P. / Van Uitert, L. G. / Grodkiewicz, W. H. / Mikulyak, R. M. et al. | 1986
- 4268
-
Hydrogenated amorphous silicon films deposited in a helium atmosphereChu, T. L. / Chu, Shirley S. / Ang, S. T. / Duong, A. / Han, Y. X. / Liu, Y. H. et al. | 1986
- 4273
-
Characterization of the effects of different capping layer structures on the laser recrystallization of silicon by using electrical test structures and Raman spectroscopyLu, Hsindao E. / Boyd, Joseph T. / Jackson, Howard E. / Janning, John L. et al. | 1986
- 4277
-
Quantitative abrasion resistance of optical coatings and surfacesLudwig, Mark A. / Stoner, Robert B. et al. | 1986
- 4281
-
Thermal and structural stability of cosputtered amorphous TaxCu1−x alloy thin films on GaAsOh, J. E. / Woollam, J. A. / Aylesworth, K. D. / Sellmyer, D. J. / Pouch, J. J. et al. | 1986
- 4287
-
Hole transport in a molecularly doped polymer: p‐diethylaminobenzaldehyde‐diphenyl hydrazone in polycarbonateSchein, L. B. / Rosenberg, A. / Rice, S. L. et al. | 1986
- 4293
-
Modal field transforming fiber between dissimilar waveguidesShigihara, Kimio / Shiraishi, Kazuo / Kawakami, Shojiro et al. | 1986
- 4297
-
Behavior of hydrogen in palladium‐aluminum metal‐oxide‐semiconductor structuresEnquist, F. / Armgarth, M. / Lundstro¨m, I. et al. | 1986
- 4300
-
Effect of light attenuation on the responsivity and detectivity of transverse and longitudinal detectorsSzmulowicz, Frank / Bloch, Kenneth T. / Madarasz, Frank L. et al. | 1986
- 4308
-
Superconducting gravity gradiometer for space and terrestrial applicationsMoody, M. V. / Chan, H. A. / Paik, H. J. et al. | 1986
- 4316
-
Transmission electron microscopy of interfaces utilizing mean inner potential differences between materialsTafto, J. / Jones, R. H. / Heald, S. M. et al. | 1986
- 4319
-
Effects of transition‐metal elements on tellurium alloys for reversible optical‐data storageYoung, R. T. / Strand, D. / Gonzalez‐Hernandez, J. / Ovshinsky, S. R. et al. | 1986
- 4322
-
Experimental observation of current generation by asymmetrical heating of ions in a tokamak plasmaGahl, J. / Ishihara, O. / Wong, K. L. / Kristiansen, M. / Hagler, M. et al. | 1986
- 4325
-
Chemical annealing of the aluminum‐oxygen hole center in vitreous silicaShelby, James E. et al. | 1986
- 4327
-
Effect of the dissolved oxygen concentration on the growth of thin oxide films on siliconMurali, V. / Murarka, S. P. et al. | 1986
- 4329
-
Behavior of dopant diffusion in a silicon‐on‐insulator structure formed by high‐dose oxygen implantationFahey, P. / Solmi, S. et al. | 1986
- 4332
-
Comment on ‘‘Crystallization characteristics of late transition metal‐Zr glasses around the composition M90Zr10’’ [J. Appl. Phys. 59, 2364 (1986)]Khan, Y. / Sostarich, M. et al. | 1986
- 4334
-
Reply to ‘‘Comment on ‘Crystallization characteristics of late transition metal‐Zr glasses around the composition M90Zr10’ ’’ [J. Appl. Phys. 59, 2364 (1986)]Altounian, Z. / Batalla, E. / Strom‐Olsen, J. O. et al. | 1986
- 4335
-
Comment on ‘‘Shortening of electron conduction pulses by electron attachers O2, N2O, and CF4’’ [J. Appl. Phys. 56, 3169 (1984)]Hunter, S. R. et al. | 1986
- 4338
-
Reply to ‘‘Comment on ‘Shortening of electron conduction pulses by electron attachers O2, N2O, and CF4’ ’’ [J. Appl. Phys. 56, 3169 (1984)]Lee, L. C. et al. | 1986
- 4339
-
SiO2‐Si interface formation by catalytic oxidation using alkali metals and removal of the catalyst speciesSoukiassian, P. / Gentle, T. M. / Bakshi, M. H. / Hurych, Z. et al. | 1986
- 4342
-
Electronic and optical properties of Fe‐doped InP prepared by organometallic vapor‐phase epitaxyHuang, K. / Wessels, B. W. et al. | 1986
- R161
-
A review of frequency measurements of optically pumped lasers from 0.1 to 8 THzInguscio, M. / Moruzzi, G. / Evenson, K. M. / Jennings, D. A. et al. | 1986