Investigation of interface states in (Sr,Ca)TiO3−x‐based ceramics (Englisch)
Nationallizenz
- Neue Suche nach: Nakano, Yoshitaka
- Neue Suche nach: Watanabe, Masamitsu
- Neue Suche nach: Takahashi, Tomoharu
- Neue Suche nach: Nakano, Yoshitaka
- Neue Suche nach: Watanabe, Masamitsu
- Neue Suche nach: Takahashi, Tomoharu
In:
Journal of Applied Physics
;
70
, 3
;
1539-1547
;
1991
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Investigation of interface states in (Sr,Ca)TiO3−x‐based ceramics
-
Beteiligte:Nakano, Yoshitaka ( Autor:in ) / Watanabe, Masamitsu ( Autor:in ) / Takahashi, Tomoharu ( Autor:in )
-
Erschienen in:Journal of Applied Physics ; 70, 3 ; 1539-1547
-
Verlag:
- Neue Suche nach: American Institute of Physics
-
Erscheinungsdatum:01.08.1991
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 70, Ausgabe 3
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- 1880
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Twice sum-frequency mixing of a dual-wavelength Nd:YALO3 laser to get 413.7-nm violet coherent radiation in LiLO3 crystalShen, H.Y. / Lin, W.X. / Zeng, R.R. / Zhou, Y.P. / Yu, G.F. / Huang, C.H. / Zeng, Z.D. / Zhang, W.J. et al. | 1991
- 1880
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Twice sum‐frequency mixing of a dual‐wavelength Nd:YALO3 laser to get 413.7‐nm violet coherent radiation in LiIO3 crystalShen, H. Y. / Lin, W. X. / Zeng, R. R. / Zhou, Y. P. / Yu, G. F. / Huang, C. H. / Zeng, Z. D. / Zhang, W. J. et al. | 1991
- 1882
-
An inverse‐scattering model for an all‐optical logic gateTamil, Lakshman S. / Jordan, Arthur K. et al. | 1991
- 1885
-
Valence‐band states of ion‐bombarded polystyreneTerrasi, A. / Foti, G. / Hwu, Y. / Margaritondo, G. et al. | 1991
- 1888
-
Enhanced line emission from laser‐produced plasmasTimmer, C. / Srivastava, S. K. / Hall, T. E. / Fucaloro, A. F. et al. | 1991
- 1891
-
The isotope effect of boron implantation in silicon simulatedTsatis, Demetre E. et al. | 1991
- 1893
-
cw femtosecond pulses tunable in the near‐ and midinfraredWachman, E. S. / Pelouch, W. S. / Tang, C. L. et al. | 1991
- 1896
-
Studies of resonant and preresonant femtosecond degenerate four‐wave mixing in unoriented conducting polymersWong, K. S. / Han, S. G. / Vardeny, Z. V. et al. | 1991
- 1899
-
Frequency dependence of transconductance on deep traps in GaAs metal semiconductor field‐effect transistorsZhao, Jian H. / Tang, Pin F. / Hwang, Robert / Chang, Steven et al. | 1991
- 1902
-
Mechanism of phase‐shifted distributed‐feedback laser with linearly chirped grating for stable‐mode operationZhou, Ping / Lee, G. S. et al. | 1991