Quasiperiodic microfacets on the surface of AlGaAs/GaAs quantum well structures grown by molecular beam epitaxy on (311)A high‐index substrates (Englisch)
- Neue Suche nach: Freire, S. L. S.
- Neue Suche nach: Cury, L. A.
- Neue Suche nach: Matinaga, F. M.
- Neue Suche nach: Valadares, E. C.
- Neue Suche nach: Moreira, M. V. B.
- Neue Suche nach: de Oliveira, A. G.
- Neue Suche nach: Alves, A. R.
- Neue Suche nach: Vilela, J. M. C.
- Neue Suche nach: Andrade, M. S.
- Neue Suche nach: Lima, T. M.
- Neue Suche nach: Sluss, J. A.
- Neue Suche nach: Freire, S. L. S.
- Neue Suche nach: Cury, L. A.
- Neue Suche nach: Matinaga, F. M.
- Neue Suche nach: Valadares, E. C.
- Neue Suche nach: Moreira, M. V. B.
- Neue Suche nach: de Oliveira, A. G.
- Neue Suche nach: Alves, A. R.
- Neue Suche nach: Vilela, J. M. C.
- Neue Suche nach: Andrade, M. S.
- Neue Suche nach: Lima, T. M.
- Neue Suche nach: Sluss, J. A.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
;
14
, 6
;
3555-3558
;
1996
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Quasiperiodic microfacets on the surface of AlGaAs/GaAs quantum well structures grown by molecular beam epitaxy on (311)A high‐index substrates
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Weitere Titelangaben:Quasiperiodic microfacets on the surface of AlGaAs/GaAs
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Beteiligte:Freire, S. L. S. ( Autor:in ) / Cury, L. A. ( Autor:in ) / Matinaga, F. M. ( Autor:in ) / Valadares, E. C. ( Autor:in ) / Moreira, M. V. B. ( Autor:in ) / de Oliveira, A. G. ( Autor:in ) / Alves, A. R. ( Autor:in ) / Vilela, J. M. C. ( Autor:in ) / Andrade, M. S. ( Autor:in ) / Lima, T. M. ( Autor:in )
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Erschienen in:
-
Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.11.1996
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Format / Umfang:4 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
-
Datenquelle:
Inhaltsverzeichnis – Band 14, Ausgabe 6
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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Quasiperiodic microfacets on the surface of AlGaAs/GaAs quantum well structures grown by molecular beam epitaxy on (311)A high‐index substratesFreire, S. L. S. / Cury, L. A. / Matinaga, F. M. / Valadares, E. C. / Moreira, M. V. B. / de Oliveira, A. G. / Alves, A. R. / Vilela, J. M. C. / Andrade, M. S. / Lima, T. M. et al. | 1996
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-
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- 3605
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-
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- 3797
-
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- 3802
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- 3808
-
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- 3813
-
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- 3821
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- 3834
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- 3839
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-
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- 3850
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- 3855
-
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- 3860
-
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- 3864
-
Modeling of electron elastic and inelastic scatteringMarrian, C. R. K. / Perkins, F. K. / Park, D. / Dobisz, E. A. / Peckerar, M. C. / Rhee, K.‐W. / Bass, R. et al. | 1996
- 3870
-
Studies on correction accuracy of proximity effect for the pattern area density method in electron beam direct writingKasuga, Takashi / Konishi, Morikazu / Oda, Tatsuji / Moriya, Shigeru et al. | 1996
- 3874
-
Region‐wise proximity effect correction for heterogeneous substrates in electron‐beam lithography: Shape modificationLee, Soo‐Young / Liu, Bin et al. | 1996
- 3880
-
Feature contrast in dose‐equalization schemes used for electron‐beam proximity controlPeckerar, Martin / Marrian, Christie / Perkins, F. Keith et al. | 1996
- 3887
-
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- 3892
-
Divot defect repair on a deep ultraviolet SiNx halftone maskNakamura, H. / Komano, H. / Sugihara, K. / Koike, T. / Higashikawa, I. et al. | 1996
- 3896
-
A proximity ion beam lithography process for high density nanostructuresWolfe, John C. / Pendharkar, Sandeep V. / Ruchhoeft, Paul / Sen, Sudipto / Morgan, Mark D. / Horne, W. E. / Tiberio, R. C. / Randall, John N. et al. | 1996
- 3900
-
Stencil mask temperature measurement and control during ion irradiationRiordon, James / Didenko, Lidia / Melngailis, John et al. | 1996
- 3903
-
Application of optical filters fabricated by masked ion beam lithographyMorgan, M. D. / Horne, W. E. / Sundaram, V. / Wolfe, J. C. / Pendharkar, S. V. / Tiberio, R. et al. | 1996
- 3907
-
High‐brightness ion source for ion projection lithographyGuharay, S. K. / Wang, W. / Dudnikov, V. G. / Reiser, M. / Orloff, J. / Melngailis, J. et al. | 1996
- 3911
-
Energy spread in liquid metal ion sources at low currentsBeckman, J. C. / Chang, T. H. P. / Wagner, A. / Pease, R. F. W. et al. | 1996
- 3916
-
Sub‐100 nm focused ion beam lithography using ladder silicone spin‐on glassSuzuki, Kohei / Yamashita, Motoji / Kawakami, Nobuyuki / Yoshikawa, Akihisa / Nakaue, Akimitsu et al. | 1996
- 3920
-
Tetramethoxysilane as a precursor for focused ion beam and electron beam assisted insulator (SiOx) depositionLipp, S. / Frey, L. / Lehrer, C. / Frank, B. / Demm, E. / Pauthner, S. / Ryssel, H. et al. | 1996
- 3924
-
HPR 506 photoresist used as a positive tone ion resistBruenger, W. H. / Buchmann, L.‐M. / Torkler, M. / Sinkwitz, Stephan et al. | 1996
- 3928
-
Development of focused ion‐beam machining techniques for Permalloy structuresThaus, D. M. / Stark, T. J. / Griffis, D. P. / Russell, P. E. et al. | 1996
- 3933
-
Use of very low energy in situ focused ion beams for three‐dimensional dopant patterning during molecular beam epitaxial growthSazio, P. J. A. / Thompson, J. H. / Jones, G. A. C. / Linfield, E. H. / Ritchie, D. A. / Houlton, M. / Smith, G. W. et al. | 1996
- 3938
-
Fabrication of laterally selected Si doped layer in GaAs using a low‐energy focused ion beam/molecular beam epitaxy combined systemYanagisawa, Junichi / Nakayama, Hiromasa / Wakaya, Fujio / Yuba, Yoshihiko / Gamo, Kenji et al. | 1996
- 3942
-
Focused ion beam biased repair of conventional and phase shift masksCui, Zheng / Prewett, Philip D. / Watson, John G. et al. | 1996
- 3947
-
Development of ion sources for ion projection lithographyLee, Y. / Gough, R. A. / Kunkel, W. B. / Leung, K. N. / Perkins, L. T. / Pickard, D. S. / Sun, L. / Vujic, J. / Williams, M. D. et al. | 1996
- 3951
-
Nanofabrication technology by gas cluster ion beamsMatsuo, Jiro / Toyoda, Noriaki / Yamada, Isao et al. | 1996
- 3955
-
Atmospheric metrology using the air turbulence compensated interferometerHenshaw, Philip D. / DeGloria, Donald P. et al. | 1996
- 3960
-
Absolute distance measurement interferometry for alignment systems for advanced lithography toolsDunn, Thomas J. / Lee, Teik‐Meng / Jain, Kanti et al. | 1996
- 3964
-
Initial results from an extreme ultraviolet interferometer operating with a compact laser plasma sourceRay‐Chaudhuri, A. K. / Krenz, K. D. / Nissen, R. P. / Haney, S. J. / Fields, C. H. / Sweatt, W. C. / MacDowell, A. A. et al. | 1996
- 3969
-
Simultaneous measurement of gap and superposition in a precision aligner for x‐ray nanolithographyMoon, E. E. / Everett, P. N. / Rhee, K. / Smith, Henry I. et al. | 1996
- 3974
-
Latent image formation: Nanoscale topography and calorimetric measurements in chemically amplified resistsOcola, L. E. / Fryer, D. / Nealey, P. / dePablo, J. / Cerrina, F. / Kämmer, S. et al. | 1996
- 3980
-
Minimizing alignment error induced by asymmetric resist coatingChen, Xun / Pease, R. F. W. et al. | 1996
- 3985
-
Patterning accuracy estimation during stage acceleration in the electron beam direct writing system EX‐8DHattori, K. / Magoshi, S. / Ando, A. / Satoh, S. / Sunaoshi, H. / Suenaga, M. / Housai, H. / Hashimoto, S. / Wada, H. / Sugihara, K. et al. | 1996
- 3990
-
Characterization of resist profiles using water enhanced focused ion beam micromachiningStark, T. J. / Griffis, D. P. / Russell, P. E. et al. | 1996
- 3996
-
Investigations on the topology of structures milled and etched by focused ion beamsLipp, S. / Frey, L. / Lehrer, C. / Frank, B. / Demm, E. / Ryssel, H. et al. | 1996
- 4000
-
Direct aerial image measurements to evaluate the performance of an extreme ultraviolet projection lithography systemFields, C. H. / Oldham, W. G. / Ray‐Chaudhuri, A. K. / Krenz, K. D. / Stulen, R. H. et al. | 1996
- 4004
-
Atomic force microscopy for cross section inspection and metrologyWilder, Kathryn / Quate, Calvin F. / Singh, Bhanwar / Alvis, Roger / Arnold, William H. et al. | 1996
- 4009
-
Analysis of distortion in interferometric lithographyFerrera, Juan / Schattenburg, M. L. / Smith, Henry I. et al. | 1996
- 4014
-
Effects of electron‐beam parameters on critical‐dimension measurementsMizuno, Fumio / Satoh, Osamu et al. | 1996
- 4020
-
0.1μm complementary metal–oxide–semiconductors and beyondToriumi, Akira et al. | 1996
- 4024
-
Fabrication of back‐gated complementary metal‐oxide semiconductor devices using mixed and matched optical and x‐ray lithographiesYang, Isabel Y. / Antoniadis, Dimitri A. / Smith, Henry I. et al. | 1996
- 4029
-
A new high‐performance surface‐micromachined tunneling accelerometer fabricated using nanolithographyKubena, R. L. / Atkinson, G. M. / Robinson, W. P. / Stratton, F. P. et al. | 1996
- 4034
-
Metal based single electron transistors operating at several KelvinAltmeyer, S. / Hamidi, A. / Spangenberg, B. / Kurz, H. et al. | 1996
- 4038
-
Fabrication of lateral resonant tunneling devices with heterostructure barriersRandall, John N. / Broekaert, T. P. E. / Smith, B. D. / Beam, E. A. / Seabaugh, A. C. / Jovanovic, D. et al. | 1996
- 4042
-
A triangle‐shaped nanoscale metal–oxide–semiconductor deviceGondermann, J. / Röwer, Th. / Hadam, B. / Köster, Th. / Stein, J. / Spangenberg, B. / Roskos, H. / Kurz, H. et al. | 1996
- 4046
-
Charge detector realization for AlGaAs/GaAs quantum‐dot cellular automataBazán, G. / Orlov, A. O. / Snider, G. L. / Bernstein, G. H. et al. | 1996
- 4051
-
A heavy ion implanted pocket 0.10 μm n‐type metal–oxide–semiconductor field effect transistor with hybrid lithography (electron‐beam/deep ultraviolet) and specific gate passivation processBenistant, F. / Tedesco, S. / Guegan, G. / Martin, F. / Heitzmann, M. / Dal’zotto, B. et al. | 1996
- 4055
-
Fabrication and performance of thin amorphous Si subwavelength transmission grating for controlling vertical cavity surface emitting laser polarizationZhuang, Lei / Schablitsky, Steve / Shi, Rick C. / Chou, Stephen Y. et al. | 1996
- 4058
-
Fabrication and investigation of nanostructures and their application in new laser devicesGriesinger, U. A. / Kronmüller, S. / Geiger, M. / Ottenwälder, D. / Scholz, F. / Schweizer, H. et al. | 1996
- 4062
-
Fabrication of quantum nanostructures for the measurement of thermoelectric phenomenaHannan, M. / Grundbacher, R. / Adesida, I. / Giannetta, R. W. et al. | 1996
- 4068
-
Fabrication of Si double barrier structureYuki, K. / Hirai, Y. / Morimoto, K. / Morita, K. / Uenoyama, T. et al. | 1996
- 4072
-
Limit of resolution of a standing wave atom optical lensBehringer, R. E. / Natarajan, Vasant / Timp, G. / Tennant, D. M. et al. | 1996
- 4076
-
Fabrication of a refractive microlens integrated onto the monomode fiberBabin, S. / Weber, M. / Koops, H. W. P. et al. | 1996
- 4080
-
Controlling sidewall smoothness for micromachined Si mirrors and lensesJuan, W. H. / Pang, S. W. et al. | 1996
- 4085
-
High‐resolution silicon patterning with self‐assembled monolayer resistsLercel, M. J. / Whelan, C. S. / Craighead, H. G. / Seshadri, K. / Allara, D. L. et al. | 1996
- 4091
-
Fabrication of InP‐based wavelength division multiplexing arrayed waveguide filters using chemically assisted ion beam etchingYoutsey, C. / Adesida, I. / Soole, J. B. D. / Amersfoort, M. R. / LeBlanc, H. P. / Andreadakis, N. C. / Rajhel, A. / Caneau, C. / Koza, M. A. / Bhat, R. et al. | 1996
- 4096
-
Fabrication of subwavelength, binary, antireflection surface‐relief structures in the near infraredWendt, J. R. / Vawter, G. A. / Smith, R. E. / Warren, M. E. et al. | 1996
- 4100
-
Combined method of electron‐beam lithography and ion implantation techniques for the fabrication of high‐temperature superconductor Josephson junctionsHollkott, J. / Hu, S. / Becker, C. / Auge, J. / Spangenberg, B. / Kurz, H. et al. | 1996
- 4105
-
Conductive dots, wires, and supertips for field electron emitters produced by electron‐beam induced deposition on samples having increased temperatureKoops, H. W. P. / Schössler, C. / Kaya, A. / Weber, M. et al. | 1996
- 4110
-
Lithographic band gap tuning in photonic band gap crystalsCheng, C. C. / Scherer, A. / Arbet‐Engels, V. / Yablonovitch, E. et al. | 1996
- 4115
-
Reliable fabrication of sub‐40 nm period gratings using a nanolithography system with interferometric dynamic focus controlCumming, D. R. S. / Thomas, S. / Beaumont, S. P. / Weaver, J. M. R. et al. | 1996
- 4119
-
Dry etching of horizontal distributed Bragg reflector mirrors for waveguide lasersThomas, S. / Pang, S. W. et al. | 1996
- 4124
-
Mold‐assisted nanolithography: A process for reliable pattern replicationHaisma, Jan / Verheijen, Martin / van den Heuvel, Kees / van den Berg, Jan et al. | 1996
- 4129
-
Nanoimprint lithographyChou, Stephen Y. / Krauss, Peter R. / Renstrom, Preston J. et al. | 1996
- 4134
-
Fabrication of nanostructures on silicon surfaces on wafer scale by controlling self‐organization processesOgino, T. / Hibino, H. / Prabhakaran, K. et al. | 1996
- 4140
-
Nanoscale patterning of an organosilane monolayer on the basis of tip‐induced electrochemistry in atomic force microscopySugimura, Hiroyuki / Okiguchi, Keiko / Nakagiri, Nobuyuki / Miyashita, Masayuki et al. | 1996
- 4144
-
The nanoscilloscope: Combined topography and AC field probing with a micromachined tipvan der Weide, D. W. / Neuzil, P. et al. | 1996
- 4148
-
Three dimensional electron optical modeling of scanning tunneling microscope lithography in resistsDobisz, E. A. / Koops, H. W. P. / Perkins, F. K. / Marrian, C. R. K. / Brandow, S. L. et al. | 1996
- 4153
-
Silicon metal‐oxide‐semiconductor field‐effect transistor with gate structures defined by scanned probe lithographyHagedorn, M. S. / Litfin, D. D. / Price, G. M. / Gordon, A. E. / Higman, T. K. et al. | 1996
- 4157
-
How practical is 193 nm lithography?Rothschild, M. / Burns, J. A. / Cann, S. G. / Forte, A. R. / Keast, C. L. / Kunz, R. R. / Palmateer, S. C. / Sedlacek, J. H. C. / Uttaro, R. / Grenville, A. et al. | 1996
- 4162
-
Can synthetic aperture techniques be applied to optical lithography?Fukuda, Hiroshi / von Bunau, Rudolf M. et al. | 1996
- 4167
-
Large‐area achromatic interferometric lithography for 100 nm period gratings and gridsSavas, T. A. / Schattenburg, M. L. / Carter, J. M. / Smith, Henry I. et al. | 1996
- 4171
-
Experimental and simulated estimation of new super resolution techniqueKamon, Kazuya / Matsui, Yasuji et al. | 1996
- 4175
-
Characterization and correction of optical proximity effects in deep‐ultraviolet lithography using behavior modelingYen, Anthony / Tritchkov, Alexander / Stirniman, John P. / Vandenberghe, Geert / Jonckheere, Rik / Ronse, Kurt / Van den hove, Luc et al. | 1996
- 4179
-
Application of optical lithography for high aspect ratio microstructuresLoechel, B. / Demmeler, R. / Rothe, M. / Bruenger, W. / Fehlberg, S. / Gruetzner, G. et al. | 1996
- 4184
-
Calorimetric measurements of optical materials for 193 nm lithographyGrenville, A. / Uttaro, R. / Sedlacek, J. H. C. / Rothschild, M. / Corliss, D. et al. | 1996
- 4188
-
Fabrication of metal–oxide–semiconductor devices with extreme ultraviolet lithographyNguyen, K. B. / Cardinale, G. F. / Tichenor, D. A. / Kubiak, G. D. / Berger, K. / Ray‐Chaudhuri, A. K. / Perras, Y. / Haney, S. J. / Nissen, R. / Krenz, K. et al. | 1996
- 4193
-
Study on elliptical polarization illumination effects for microlithographyJeon, Seong‐Ho / Cho, Bae‐Doo / Lee, Kyeong‐Woon / Lee, Sung‐Muk / Baik, Ki‐Ho / Ahn, Chang‐Nam / Yim, Dong‐Gyu et al. | 1996
- 4199
-
Passivate SiNx halftone phase shifting mask for deep ultraviolet exposureIto, S. / Iwamatsu, T. / Sato, H. / Asano, M. / Kawano, K. / Miyashita, F. et al. | 1996
- 4203
-
Prospect and challenges of ArF excimer laser lithography processes and materialsOhfuji, T. / Ogawa, T. / Kuhara, K. / Sasago, M. et al. | 1996
- 4207
-
Plasma‐deposited silylation resist for 193 nm lithographyHorn, Mark W. / Maxwell, Brian E. / Goodman, Russell B. / Kunz, Roderick R. / Eriksen, Lynn M. et al. | 1996
- 4212
-
ArF surface modification resist process with enhanced water sorption abilityMatsuo, Takahiro / Endo, Masayuki / Shirai, Masamitsu / Tsunooka, Masahiro et al. | 1996
- 4216
-
Acid‐diffusion suppression in chemical amplification resists by controlling acid‐diffusion channels in base matrix polymersYoshimura, Toshiyuki / Shiraishi, Hiroshi / Terasawa, Tsuneo / Okazaki, Shinji et al. | 1996
- 4221
-
Diagnostics of patterning mechanisms in chemically amplified resists from bake dependencies of imagesZuniga, Marco A. / Neureuther, Andrew R. et al. | 1996
- 4226
-
A study of acid diffusion in chemically amplified deep ultraviolet resistItani, Toshiro / Yoshino, Hiroshi / Hashimoto, Shuichi / Yamana, Mitsuharu / Samoto, Norihiko / Kasama, Kunihiko et al. | 1996
- 4229
-
A multilayer inorganic antireflective system for use in 248 nm deep ultraviolet lithographyCirelli, R. A. / Weber, G. R. / Kornblit, A. / Baker, R. M. / Klemens, F. P. / DeMarco, J. / Pai, C. S. et al. | 1996
- 4234
-
Effect of gaseous permeability of overcoat layer on KrF chemically amplified positive resistsKishimura, S. / Sakai, J. / Tsujita, K. / Matsui, Y. et al. | 1996
- 4239
-
Resist application effects on chemically amplified resist responseDentinger, Paul M. / Nelson, Carla M. / Rhyner, Steven J. / Taylor, James W. / Fedynyshyn, Theodore H. / Cronin, Michael F. et al. | 1996
- 4246
-
Impact of reduced resist thickness on deep ultraviolet lithographyAzuma, T. / Ohiwa, T. / Okumura, K. / Farrell, T. / Nunes, R. / Dobuzinsky, D. / Fichtl, G. / Gutmann, A. et al. | 1996
- 4252
-
Application of a reaction‐diffusion model for negative chemically amplified resists to determine electron‐beam proximity correction parametersGlezos, N. / Patsis, G. P. / Raptis, I. / Argitis, P. / Gentili, M. / Grella, L. et al. | 1996
- 4257
-
Negative resist corner rounding. Envelope volume modelingHagouel, Paul Isaac L. / Neureuther, Andrew R. / Zenk, Andrew M. et al. | 1996
- 4262
-
Electron‐beam induced etching of resist with water vapor as the etching mediumKohlmann‐von Platen, K. T. / Bruenger, W. H. et al. | 1996
- 4267
-
Correlation of UVIIHS resist chemistry to dissolution rate measurementsThackeray, J. / Fedynyshyn, T. H. / Kang, D. / Rajaratnam, M. M. / Wallraff, G. / Opitz, J. / Hofer, D. et al. | 1996
- 4272
-
Nanometer‐scale resolution of calixarene negative resist in electron beam lithographyFujita, J. / Ohnishi, Y. / Ochiai, Y. / Nomura, E. / Matsui, S. et al. | 1996
- 4277
-
Measurement of the backscatter coefficient using resist response curves for 20–100 keV electron beam lithography on SiWatson, G. Patrick / Fu, Diana / Berger, Steven D. / Tennant, Donald / Fetter, Linus / Novembre, Anthony / Biddick, Christopher et al. | 1996
- 4283
-
High voltage electron beam nanolithography on WO3Carcenac, F. / Vieu, C. / Haghiri‐Gosnet, A. M. / Simon, G. / Mejias, M. / Launois, H. et al. | 1996
- 4288
-
Extendibility of x‐ray lithography to ⩽130 nm ground rules in complex integrated circuit patternsHector, Scott / Chu, William / Thompson, Matthew / Pol, Victor / Dauksher, Bill / Cummings, Kevin / Resnick, Doug / Pendharkar, Sandeep / Maldonado, Juan / McCord, Mark et al. | 1996
- 4294
-
Extendibility of synchrotron radiation lithography to the sub‐100 nm regionDeguchi, Kimiyoshi / Miyoshi, Kazunori / Oda, Masatoshi / Matsuda, Tadahito / Ozawa, Akira / Yoshihara, Hideo et al. | 1996
- 4298
-
Replication of near 0.1 μm hole patterns by using x‐ray lithographyKikuchi, Yukiko / Kihara, Naoko / Sugihara, Shinji / Saitoh, Satoshi / Kondo, Kenzo / Nomura, Hiroshi / Ozaki, Tohru et al. | 1996
- 4303
-
Overlay accuracy of Canon synchrotron radiation stepper XFPA for 0.15 μm processSaitoh, K. / Ohsawa, H. / Sentoku, K. / Matsumoto, T. / Mizusawa, N. / Fukuda, Y. / Uda, K. / Sumitani, H. / Hifumi, T. et al. | 1996
- 4308
-
Predicting in‐plane distortion from electron‐beam lithography on x‐ray mask membranesLaird, D. L. / Engelstad, R. L. / Puisto, D. M. / Acosta, R. E. / Cummings, K. D. / Johnson, W. A. et al. | 1996
- 4314
-
Trench isolation at 300 nm active pitch using x‐ray lithographyPerera, Asanga H. / Thompson, M. / Hector, S. / Iyer, S. / Azrak, M. J. / Zavala, M. et al. | 1996
- 4318
-
A proposal for maskless, zone‐plate‐array nanolithographySmith, Henry I. et al. | 1996
- 4323
-
Optimization of the refractory x‐ray mask fabrication sequenceCummings, K. D. / Dauksher, W. J. / Johnson, W. A. / Laudon, M. F. / Engelstad, R. et al. | 1996
- 4328
-
Defect‐free x‐ray masks for 0.2‐μm large‐scale integrated circuitsOkada, I. / Saitoh, Y. / Sekimoto, M. / Ohkubo, T. / Matsuda, T. et al. | 1996
- 4332
-
X‐ray mask distortion correction technology using pattern displacement simulatorUchiyama, S. / Oda, M. / Matsuda, T. et al. | 1996
- 4336
-
X‐ray induced mask contamination and particulate monitoring in x‐ray steppersCapasso, C. / Pomerene, A. / Chu, W. / Leavey, J. / Lamberti, A. / Hector, S. / Oberschmidt, J. / Pol, V. et al. | 1996
- 4341
-
Multiple‐pass writing optimization for proximity x‐ray mask‐making using electron‐beam lithographyPuisto, Denise M. / Lawliss, Mark S. / Rocque, Janet M. / Kimmel, Kurt R. / Hartley, John G. et al. | 1996
- 4345
-
Fabrication of x‐ray lithography masks with optical lithographyLaTulipe, D. / Maldonado, J. R. / Mitchell, P. / Leduc, R. / Babich, I. et al. | 1996
- 4350
-
Dynamic motion of mask membrane in x‐ray stepperUchida, Norio / Kikuiri, Nobutaka / Nishida, Jun et al. | 1996
- 4354
-
Image placement errors in x‐ray masks induced by changes in resist stress during electron‐beam writingAcosta, R. E. / Puisto, Denise et al. | 1996
- 4359
-
Fabrication of x‐ray masks for giga‐bit DRAM by using a SiC membrane and W–Ti absorberMarumoto, Kenji / Yabe, Hideki / Aya, Sunao / Kitamura, Kaeko / Sasaki, Kei / Kise, Koji / Miyachi, Takeshi et al. | 1996
- 4363
-
Sputtered TaX film properties for x‐ray mask absorbersYoshihara, Takuya / Kotsuji, Setsu / Suzuki, Katsumi et al. | 1996
- 4366
-
X‐ray mask fabrication technology for 0.1 μm very large scale integrated circuitsOda, M. / Uchiyama, S. / Watanabe, T. / Komatsu, K. / Matsuda, T. et al. | 1996