Direct Observation of Charge Storage in the Surface States of Silicon (Englisch)
Nationallizenz
- Neue Suche nach: Harman, G. G.
- Neue Suche nach: Raybold, R. L.
- Neue Suche nach: Meyer, Owen L.
- Neue Suche nach: Harman, G. G.
- Neue Suche nach: Raybold, R. L.
- Neue Suche nach: Meyer, Owen L.
In:
Journal of Applied Physics
;
34
, 2
;
380-383
;
1963
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Direct Observation of Charge Storage in the Surface States of Silicon
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Beteiligte:
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Erschienen in:Journal of Applied Physics ; 34, 2 ; 380-383
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Verlag:
- Neue Suche nach: American Institute of Physics
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Erscheinungsdatum:01.02.1963
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 34, Ausgabe 2
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