Field‐emitter‐array development for microwave applications (Englisch)
- Neue Suche nach: Spindt, C. A.
- Neue Suche nach: Holland, C. E.
- Neue Suche nach: Schwoebel, P. R.
- Neue Suche nach: Brodie, I.
- Neue Suche nach: Spindt, C. A.
- Neue Suche nach: Holland, C. E.
- Neue Suche nach: Schwoebel, P. R.
- Neue Suche nach: Brodie, I.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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14
, 3
;
1986-1989
;
1996
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Field‐emitter‐array development for microwave applications
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Weitere Titelangaben:FE array developmet for MW applications
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Beteiligte:Spindt, C. A. ( Autor:in ) / Holland, C. E. ( Autor:in ) / Schwoebel, P. R. ( Autor:in ) / Brodie, I. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.05.1996
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Format / Umfang:4 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:MICROELECTRONICS , MICROWAVE AMPLIFIERS , CATHODES , FIELD EMISSION , SILICON , CAPACITANCE , DESIGN , Si
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Datenquelle:
Inhaltsverzeichnis – Band 14, Ausgabe 3
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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- 2208
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Structural and photoluminescence properties of growth‐induced InAs island columns in GaAsSolomon, G. S. / Trezza, J. A. / Marshall, A. F. / Harris, J. S. et al. | 1996
- 2212
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High index orientation effects of strained self‐assembled InGaAs quantum dotsLubyshev, D. I. / González‐Borrero, P. P. / Marega, E. / Petitprez, E. / Basmaji, P. et al. | 1996
- 2216
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Commercial heterojunction bipolar transistor production by molecular beam epitaxyStreit, Dwight C. / Oki, Aaron K. / Block, Thomas R. / Lammert, Michael D. / Hoppe, Matthew M. / Umemoto, Donald K. / Wojtowicz, Michael et al. | 1996
- 2221
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Molecular beam epitaxy growth and characterization of InGaAlAs‐collector heterojunction bipolar transistors with 140 GHz fmax and 20 V breakdownBlock, T. R. / Wojtowicz, M. / Cowles, J. / Tran, L. / Oki, A. K. / Streit, D. C. et al. | 1996
- 2225
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InGaP/GaAs/InGaP double‐heterojunction bipolar transistors grown by solid‐source molecular‐beam epitaxy with a valved phosphorus crackerChin, T. P. / Chang, J. C. P. / Woodall, J. M. / Chen, W. L. / Haddad, G. I. et al. | 1996
- 2229
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Surface segregation of arsenic and phosphorus from buried layers during Si molecular beam epitaxyHobart, K. D. / Kub, F. J. / Jernigan, G. G. / Thompson, P. E. et al. | 1996
- 2233
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In1−xAlxP/InAlAs/InGaAs and InAlAs/InAs0.3P0.7 high‐electron mobility transistor structures grown by solid source molecular beam epitaxyHoke, W. E. / Lemonias, P. J. / Weir, D. G. / Hendriks, H. T. / Chou, L.‐J. / Hsieh, K. C. et al. | 1996
- 2236
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Pseudomorphic high‐electron‐mobility transistors with low‐temperature‐grown GaAs buffersRogers, T. J. / Nichols, K. B. / Kopp, W. F. / Smith, F. W. / Actis, R. et al. | 1996
- 2240
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Nondestructive test methodology for molecular beam epitaxy grown pseudomorphic high electron mobility transistor materialsPao, Y. C. et al. | 1996
- 2244
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All solid source molecular beam epitaxy growth of GaxIn1−xAsyP1−y/InP lasers using phosphorus and arsenic valved cracking cellsBaillargeon, J. N. / Cheng, K. Y. / Cho, A. Y. / Chu, S. N. G. et al. | 1996
- 2248
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Molecular beam epitaxy growth of InGaP multiple quantum well structures on GaP for optical modulatorsVogt, T. J. / Thiagarajan, P. / Robinson, G. Y. et al. | 1996
- 2252
-
Improved modulation contrast of asymmetric Fabry–Perot field‐effect transistor self‐electro‐optic effect devices by in situ thickness correctionsKuo, J. M. / D’Asaro, L. A. / Kuo, H. C. / Pei, S. S. / Chang, P. C. et al. | 1996
- 2256
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Molecular beam epitaxy growth of resonant‐cavity separate‐absorption‐and‐multiplication avalanche photodiodesAnselm, K. A. / Murtaza, S. S. / Hu, C. / Campbell, J. C. / Streetman, B. G. et al. | 1996
- 2259
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II–VI blue/green laser diodes on ZnSe substratesBoney, C. / Yu, Z. / Rowland, W. H. / Hughes, W. C. / Cook, J. W. / Schetzina, J. F. / Cantwell, Gene / Harsch, William C. et al. | 1996
- 2263
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Molecular‐beam epitaxy growth of strontium thiogallateYang, T. / Wagner, B. K. / Chaichimansour, M. / Park, W. / Wang, Z. L. / Summers, C. J. et al. | 1996
- 2267
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Molecular beam epitaxial growth of Eu‐doped CaF2 and BaF2 on SiFang, X. M. / Chatterjee, T. / McCann, P. J. / Liu, W. K. / Santos, M. B. / Shan, W. / Song, J. J. et al. | 1996
- 2271
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Molecular beam epitaxy of high‐quality, nonstoichiometric multiple quantum wellsMelloch, M. R. / Lahiri, I. / Nolte, D. D. / Chang, J. C. P. / Harmon, E. S. / Woodall, J. M. / Li, N. Y. / Tu, C. W. et al. | 1996
- 2275
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Optical characterization of low temperature grown GaAs by transmission measurements above the band gapStreb, D. / Ruff, M. / Dankowski, S. U. / Kiesel, P. / Kneissl, M. / Malzer, S. / Keil, U. D. / Döhler, G. H. et al. | 1996
- 2278
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In situ and ex situ spectroscopic investigation of low temperature grown gallium arsenide by molecular beam epitaxyEyink, Kurt G. / Capano, M. A. / Walck, S. D. / Haas, T. W. / Streetman, Ben G. et al. | 1996
- 2282
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Material optimization for a polarized electron source from strained GaAs:Be grown on an InGaP pseudosubstrateBi, W. G. / Tu, C. W. et al. | 1996
- 2286
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Study of interface abruptness of molecular beam epitaxial GaAs/AlAs superlattices grown on GaAs (311) and (100) substratesHsu, Y. / Wang, W. I. / Kuan, T. S. et al. | 1996
- 2290
-
Growth and characterization of high mobility two‐dimensional electron gasesColeridge, P. T. / Wasilewski, Z. / Zawadzki, P. et al. | 1996
- 2293
-
Influence of surface and interface states on the electrical properties of an Al0.2Ga0.8As/In0.18Ga0.82As δ ‐modulation‐doped heterostructureYoung, A. P. / Wieder, H. H. et al. | 1996
- 2297
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Low interface state density oxide‐GaAs structures fabricated by in situ molecular beam epitaxyHong, M. / Passlack, M. / Mannaerts, J. P. / Kwo, J. / Chu, S. N. G. / Moriya, N. / Hou, S. Y. / Fratello, V. J. et al. | 1996
- 2301
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Carbon tetrabromide doping memory effect, incorporation efficiency, and InAlAs/InGaAs heterojunction bipolar transistor applicationHwang, W.‐Y. / Micovic, M. / Miller, D. L. / Geva, M. et al. | 1996
- 2305
-
Comparison of (Al,Ga)As(110) grown by molecular beam epitaxy with As2 and As4Holland, M. C. / Stanley, C. R. et al. | 1996
- 2309
-
X‐valley related luminescence from AlAs/(Al,Ga) As quantum well structures grown on (112)B GaAs substratesHenderson, R. H. / Towe, E. et al. | 1996
- 2312
-
Large blueshift in the photoluminescence of pseudomorphic InGaAs/GaAs quantum wells grown in patterned (100) GaAs grooves and ridges with vertical sidewallsKamath, K. / Phillips, J. / Singh, J. / Bhattacharya, P. et al. | 1996
- 2315
-
Room temperature red light photoluminescence from AlGaAs multiple quantum well structures at very low excitation intensitiesTowner, F. J. et al. | 1996
- 2318
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Analysis of molecular beam epitaxy grown Ga1−xAlxAs/Ga1−yAlyAs dielectric stack mirrors using complex indices of refractionStrachan, W. J. / Reiner, J. / Goodhue, W. D. / Karakashian, A. S. / Casasanta, V. / Geller, J. D. et al. | 1996
- 2322
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Solid source molecular beam epitaxy of GaInAsP/InP: Growth mechanisms and machine operationWamsley, C. C. / Koch, M. W. / Wicks, G. W. et al. | 1996
- 2325
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Heavy Be doping of GaP and InxGa1−xPTagare, M. V. / Chin, T. P. / Woodall, J. M. et al. | 1996
- 2327
-
Quantum confined Stark effect near 1.5 μm wavelength in InAs0.53P0.47/GayIn1−yP strain‐balanced quantum wellsMei, X. B. / Bi, W. G. / Tu, C. W. / Chou, L. J. / Hsieh, K. C. et al. | 1996
- 2331
-
Study on improving InxGa1−xAs/InyGa1−yP heterointerfaces in gas‐source molecular beam expitaxyYan, C. H. / Tu, C. W. et al. | 1996
- 2335
-
Atomic antimony for molecular beam epitaxy of high quality III–V semiconductor alloysBrewer, P. D. / Chow, D. H. / Miles, R. H. et al. | 1996
- 2339
-
Molecular‐beam epitaxial growth and characterization of AlxIn1−xSb/InSb quantum well structuresLiu, W. K. / Zhang, Xuemei / Ma, Weiluan / Winesett, J. / Santos, M. B. et al. | 1996
- 2343
-
Normal incidence infrared modulators using intersubband transitions in InAs/GaSb/AlSb stepped quantum wells grown by molecular beam epitaxyDu, Q. / Alperin, J. / Wang, W. I. et al. | 1996
- 2346
-
Molecular beam epitaxy growth kinetics for group III nitridesFoxon, C. T. / Cheng, T. S. / Hooper, S. E. / Jenkins, L. C. / Orton, J. W. / Lacklison, D. E. / Novikov, S. V. / Popova, T. B. / Tret’yakov, V. V. et al. | 1996
- 2349
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Molecular beam epitaxy growth and properties of GaN, AlxGa1−xN, and AlN on GaN/SiC substratesJohnson, M. A. L. / Fujita, Shizuo / Rowland, W. H. / Bowers, K. A. / Hughes, W. C. / He, Y. W. / El‐Masry, N. A. / Cook, J. W. / Schetzina, J. F. / Ren, J. et al. | 1996
- 2354
-
High‐quality GaN and AlN grown by gas‐source molecular beam epitaxy using ammonia as the nitrogen sourceYang, Z. / Li, L. K. / Wang, W. I. et al. | 1996
- 2357
-
Investigation of GaN deposition on Si, Al2O3, and GaAs using in situ mass spectroscopy of recoiled ions and reflection high‐energy electron diffractionTaferner, W. T. / Bensaoula, A. / Kim, E. / Bousetta, A. et al. | 1996
- 2362
-
Molecular beam epitaxial growth and properties of short‐wave infrared Hg0.3Cd0.7Te filmsRajavel, R. D. / Wu, O. K. / Jamba, D. M. / de Lyon, T. J. et al. | 1996
- 2366
-
Heteroepitaxy of CdTe on {211} Si using crystallized amorphous ZnTe templatesDhar, N. K. / Wood, C. E. C. / Gray, A. / Wei, H. Y. / Salamanca‐Riba, L. / Dinan, J. H. et al. | 1996
- 2371
-
Phase instability of n‐CdS grown by molecular‐beam epitaxyYamada, T. / Setiagung, C. / Jia, A. W. / Kobayashi, M. / Yoshikawa, A. et al. | 1996
- 2374
-
High quality CdTe/Cd1−xMgxTe quantum wells grown on GaAs (100) and (111) substrates by molecular‐beam epitaxyXin, S. H. / Hu, B. H. / Short, S. W. / Bindley, U. / Yin, A. / Dobrowolska, M. / Furdyna, J. K. et al. | 1996
- 2378
-
Surface phenomena and kinetics of Si1−xGex/Si (0≤x<1) growth by molecular beam epitaxy using Si2H6 and Ge/GeH4Zhang, F. C. / Singh, J. / Bhattacharya, P. K. et al. | 1996
- 2381
-
Interfacet mass transport and facet evolution in selective epitaxial growth of Si by gas source molecular beam epitaxyXiang, Qi / Li, Shaozhong / Wang, Dawen / Wang, Kang L. / Couillard, J. Greg / Craighead, Harold G. et al. | 1996
- 2387
-
Improved luminescence quality with an asymmetric confinement potential in Si‐based type‐II quantum wells grown on a graded SiGe relaxed bufferFukatsu, S. / Usami, N. / Shiraki, Y. et al. | 1996