Novolak–diazonaphthoquinone resists: The central role of phenolic strings (Englisch)
- Neue Suche nach: Reiser, Arnost
- Neue Suche nach: Yan, Zhenglin
- Neue Suche nach: Han, Yu-Kai
- Neue Suche nach: Soo Kim, Myoung
- Neue Suche nach: Reiser, Arnost
- Neue Suche nach: Yan, Zhenglin
- Neue Suche nach: Han, Yu-Kai
- Neue Suche nach: Soo Kim, Myoung
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
;
18
, 3
;
1288-1293
;
2000
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Novolak–diazonaphthoquinone resists: The central role of phenolic strings
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Beteiligte:Reiser, Arnost ( Autor:in ) / Yan, Zhenglin ( Autor:in ) / Han, Yu-Kai ( Autor:in ) / Soo Kim, Myoung ( Autor:in )
-
Erschienen in:
-
Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.05.2000
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Format / Umfang:6 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 18, Ausgabe 3
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Process control of high volume pseudomorphic high electron mobility transistor and metal–semiconductor field effect transistor molecular beam epitaxy production using temperature-dependent photoluminescenceLiu, W. / Lin, M. E. et al. | 2000
- 1668
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New approach to the independent ohmic contact formation in the structures with two parallel isotype quantum wellsSadofyev, Yu. G. / Yevstigneev, S. V. / Kopaev, Yu. V. / Shipitsin, D. S. / Shmelev, S. S. et al. | 2000
- 1672
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Laser operation at room temperature of self-organized quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxyOhno, Yasuhide / Higashiwaki, Masataka / Shimomura, Satoshi / Hiyamizu, Satoshi / Ikawa, Seiji et al. | 2000
- 1675
-
Fabrication of GaAs quantum wires by natural selective doping and its characterization by electrostatic force microscopeYoh, Kanji / Takabayashi, Shingo et al. | 2000
- 1680
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Negative differential resistance of a ridge-type InGaAs quantum wire field-effect transistorSugaya, Takeyoshi / Kim, Seong-Jin / Nakagawa, Tadashi / Sugiyama, Yoshinobu / Ogura, Mutsuo et al. | 2000
- 1684
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Growth of CdS self-organized quantum dots by molecular beam epitaxy and application to light emitting diode structuresKobayashi, M. / Kitamura, K. / Umeya, H. / Jia, A. W. / Yoshikawa, A. / Shimotomai, M. / Kato, Y. / Takahashi, K. et al. | 2000
- 1688
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Characteristics of interface: Structures and compositionsHong, M. / Kortan, A. R. / Kwo, J. / Mannaerts, J. P. / Krajewski, J. J. / Lu, Z. H. / Hsieh, K. C. / Cheng, K. Y. et al. | 2000
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Modulation-doped ZnSe/(Zn,Cd,Mn)Se quantum wells and superlatticesBerry, J. J. / Knobel, R. / Ray, O. / Peoples, W. / Samarth, N. et al. | 2000
- 1697
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Structural and magnetic properties of molecular beam epitaxy grown GaMnAs layersSadowski, J. / Domagała, J. Z. / Ba̧k-Misiuk, J. / Koleśnik, S. / Sawicki, M. / Świa̧tek, K. / Kanski, J. / Ilver, L. / Ström, V. et al. | 2000
- 1701
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Growth and nonlinear optical properties of GaAs absorber layers for semiconductor saturable absorber mirrorsSchön, S. / Haiml, M. / Achermann, M. / Keller, U. et al. | 2000
- 1706
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Fabrication of GaAs-based photonic band gap materialsZhou, W. D. / Bhattacharya, P. / Sabarinathan, J. / Zhu, D. H. et al. | 2000
- 1711
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Molecular-beam epitaxy growth and nitrogen doping of hexagonal ZnSe and ZnCdSe/ZnSe quantum well structures on hexagonal ZnMgSSe bulk substratesLin, W. / Tamargo, M. C. / Wei, H. Y. / Sarney, W. / Salamanca-Riba, L. / Fitzpatrick, B. J. et al. | 2000
- 1716
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Phase stability during molecular beam epitaxial growth of CdTe on InSb(111) substratesHuerta, J. / López, M. / Zelaya-Angel, O. et al. | 2000
- 1720
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Molecular beam epitaxy of PbSrSe and PbSe/PbSrSe multiple quantum well structures for use in midinfrared light emitting devicesFang, X. M. / Namjou, K. / Chao, I-Na / McCann, P. J. / Dai, N. / Tor, G. et al. | 2000
- 1724
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Interface-controlled Si/SiGe-heterostructure growth and its device applicationSugii, N. / Nakagawa, K. / Yamaguchi, S. / Miyao, M. et al. | 2000
- 1728
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Heterostructures of pseudomorphic and alloys grown on Ge (001) substratesDashiell, M. W. / Kolodzey, J. / Boucaud, P. / Yam, Vy / Lourtioz, J.-M. et al. | 2000
- 1737
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Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited interfacesBrillson, L. J. / Young, A. P. / White, B. D. / Schäfer, J. / Niimi, H. / Lee, Y. M. / Lucovsky, G. et al. | 2000
- 1742
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Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectricsLucovsky, G. / Yang, H. / Niimi, H. / Keister, J. W. / Rowe, J. E. / Thorpe, M. F. / Phillips, J. C. et al. | 2000
- 1749
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Stress and defects in silicate films and glassesPhillips, J. C. et al. | 2000
- 1752
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Controlled bond formation between chemical vapor deposition Si and ultrathin layersYasuda, T. / Nishizawa, M. / Yamasaki, S. / Tanaka, K. et al. | 2000
- 1757
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remote plasma-assisted oxidation of Si(100): Plasma chemistry, growth kinetics, and interfacial reactionsSmith, Bradley C. / Khandelwal, Amit / Lamb, H. Henry et al. | 2000
- 1764
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Bond strain, chemical induction, and OH incorporation in low-temperature (350–100 °C) plasma deposited silicon dioxide filmsGupta, A. / Parsons, G. N. et al. | 2000
- 1770
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Hydrogen diffusion through silicon/silicon dioxide interfacesNickel, N. H. et al. | 2000
- 1773
-
Internal stress of amorphous carbon nitride filmsAono, Masami / Nitta, Shoji / Katsuno, Takashi / Iuchi, Takeshi et al. | 2000
- 1776
-
Photoemission of the heterointerfaceO’Brien, M. L. / Koitzsch, C. / Nemanich, R. J. et al. | 2000
- 1785
-
Band offsets of wide-band-gap oxides and implications for future electronic devicesRobertson, John et al. | 2000
- 1792
-
Bandtails and defects in microcrystalline siliconFuhs, W. / Kanschat, P. / Lips, K. et al. | 2000
- 1796
-
Infrared optical constants of silicon dioxide thin films by measurements of andTsu, David V. et al. | 2000
- 1805
-
Comparison of the potential fluctuations in measured by the optical and transport methodsSinha, A. K. / Agarwal, S. C. et al. | 2000