Three‐dimensional analysis for contrast enhancement lithography by a three‐dimensional photolithography simulator (Englisch)
- Neue Suche nach: Ito, Tetsuo
- Neue Suche nach: Takahashi, Shigeru
- Neue Suche nach: Okano, Sadao
- Neue Suche nach: Sugimoto, Aritoshi
- Neue Suche nach: Kobayashi, Masamichi
- Neue Suche nach: Ito, Tetsuo
- Neue Suche nach: Takahashi, Shigeru
- Neue Suche nach: Okano, Sadao
- Neue Suche nach: Sugimoto, Aritoshi
- Neue Suche nach: Kobayashi, Masamichi
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
;
10
, 1
;
126-132
;
1992
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Three‐dimensional analysis for contrast enhancement lithography by a three‐dimensional photolithography simulator
-
Weitere Titelangaben:3D analysis for CEL
-
Beteiligte:Ito, Tetsuo ( Autor:in ) / Takahashi, Shigeru ( Autor:in ) / Okano, Sadao ( Autor:in ) / Sugimoto, Aritoshi ( Autor:in ) / Kobayashi, Masamichi ( Autor:in )
-
Erschienen in:
-
Verlag:
- Neue Suche nach: American Vacuum Society
-
Erscheinungsdatum:01.01.1992
-
Format / Umfang:7 pages
-
ISSN:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Elektronische Ressource
-
Sprache:Englisch
-
Schlagwörter:
-
Datenquelle:
Inhaltsverzeichnis – Band 10, Ausgabe 1
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
-
Force microscope using a twin‐path interferometerWatanabe, S. / Hane, K. / Goto, T. et al. | 1992
- 6
-
Identification of the facet planes of phase I TiO2(001) rutile by scanning tunneling microscopy and low energy electron diffractionPoirier, G. E. / Hance, B. K. / White, J. M. et al. | 1992
- 16
-
Strain‐induced dimer adatom stacking fault structures of germanium on Si(111)‐(√3×√3)R30°:B observed by scanning tunneling microscopyMüller, B. / Jusko, O. / Pietsch, G. J. / Köhler, U. et al. | 1992
- 19
-
Dependence of the quality factor of micromachined silicon beam resonators on pressure and geometryBlom, F. R. / Bouwstra, S. / Elwenspoek, M. / Fluitman, J. H. J. et al. | 1992
- 27
-
Localized plasma etching for device optimizationLarson, Donald R. / Veasey, David L. et al. | 1992
- 30
-
Particle contamination on a silicon substrate in a SF6/Ar plasmaSmadi, Mithkal M. / Kong, George Y. / Carlile, Robert N. / Beck, Scott E. et al. | 1992
- 37
-
The role of oxygen excitation and loss in plasma‐enhanced deposition of silicon dioxide from tetraethylorthosilicateRaupp, Gregory B. / Cale, Timothy S. / Hey, H. Peter W. et al. | 1992
- 46
-
Semiconductor damage from inert and molecular gas plasmasSeaward, K. L. / Moll, N. J. et al. | 1992
- 53
-
Platinum silicide junction spiking in arsenic doped polysilicon transistorsGrivna, Gordon / Kirchgessner, Jim / Carlson, Jack et al. | 1992
- 60
-
Applications of sawtooth doping superlattice for negative‐differential‐resistance devices fabricationLiu, Wen‐Chau / Sun, Chung‐Yih / Lour, Wen‐Shiung / Guo, Der‐Feng et al. | 1992
- 67
-
Low‐energy etching of GaAs using a single‐grid ion beamUenishi, Yuji / Yanagisawa, Keiichi et al. | 1992
- 71
-
(511) and (711) GaAs epilayers prepared by molecular‐beam epitaxyYoung, K. / Kahn, A. / Phillips, J. M. et al. | 1992
- 77
-
GaAs doping by rapid thermal diffusion of a laser‐deposited elemental Zn source film: Shallow and laterally graded diffusionsLicata, Thomas J. / Scarmozzino, Robert / Garcia, Basilio J. / Osgood, Richard M. / Schwarz, Steven A. et al. | 1992
- 84
-
Deep levels and DX centers in AlxGa1−xAs/GaAs. I. Composition dependence studyHalder, N. C. / Barnes, D. E. et al. | 1992
- 94
-
Deep levels and DX centers in AlxGa1−xAs/GaAs. II. Field effect deep level transient spectroscopy studyHalder, N. C. / Barnes, D. E. et al. | 1992
- 103
-
Electrical characterization of pseudomorphic GaAs/InGaAs/AlGaAs and AlGaAs/InGaAs/AlGaAs modulation doped field effect transistor‐type heterostructures grown by molecular‐beam epitaxyMoreira, M. V. Baeta / Py, M. A. / Gailhanou, M. / Ilegems, M. et al. | 1992
- 110
-
Spin–disorder scattering in europium‐doped indium antimonide thin filmsMorelli, D. T. / Partin, D. L. / Heremans, J. / Thrush, C. M. et al. | 1992
- 114
-
Embossed grating lead chalcogenide distributed‐feedback lasersSchlereth, K.‐H. / Böttner, H. et al. | 1992
- 118
-
Fabrication of 50 nm line‐and‐space x‐ray masks in thick Au using a 50 keV electron beam systemChu, W. / Smith, Henry I. / Rishton, S. A. / Kern, D. P. / Schattenburg, M. L. et al. | 1992
- 122
-
Deep submicron contact fabrication by electron beam direct writing with intraproximity effect correctionHashimoto, Kazuhiko / Misaka, Akio / Nomura, Noboru et al. | 1992
- 126
-
Three‐dimensional analysis for contrast enhancement lithography by a three‐dimensional photolithography simulatorIto, Tetsuo / Takahashi, Shigeru / Okano, Sadao / Sugimoto, Aritoshi / Kobayashi, Masamichi et al. | 1992
- 133
-
Proximity effect correction data processing system for electron beam lithographyHarafuji, Kenji / Misaka, Akio / Kawakita, Kenji / Nomura, Noboru / Hamaguchi, Hiromitsu / Kawamoto, Masahiro et al. | 1992
- 143
-
Effects of Si on electromigration of Al–Cu–Si/TiN layered metallizationKoubuchi, Yasushi / Ishida, Shin‐ichi / Sahara, Masashi / Tanigaki, Yukio / Kato, Tokio / Onuki, Jin / Suwa, Motoo et al. | 1992
- 149
-
Properties of Cu film under XeCl excimer laser irradiationWang, Shi‐Qing / Ong, Edith et al. | 1992
- 160
-
Filling of contacts and interconnects with Cu under XeCl excimer laser irradiationWang, Shi‐Qing / Ong, Edith et al. | 1992
- 166
-
Noncontact, 1 °C resolution temperature measurement by projection moiré interferometryZaidi, Saleem H. / Brueck, S. R. J. / McNeil, J. R. et al. | 1992
- 170
-
Internal structure and two‐dimensional order of monolayer C60 molecules on gold substrateChen, T. / Howells, S. / Gallagher, M. / Yi, L. / Sarid, D. / Lichtenberger, D. L. / Nebesny, K. W. / Ray, C. D. et al. | 1992
- 175
-
Anisotropic and damageless etching of single‐crystalline silicon using chlorine trifluoride molecular beamSaito, Yoji / Hirabaru, Masahiro / Yoshida, Akira et al. | 1992
- 179
-
Proximity exposure compensation and resist debris formation in electron beam lithographyDeshmukh, P. R. / Singh, M. / Rangra, K. J. / Vyas, P. D. / Khokle, W. S. / Pal, B. B. et al. | 1992
- 183
-
Preparation of transmission electron microscopy cross sections using nanofabrication techniquesYater, J. A. / Thompson, Michael O. et al. | 1992
- 187
-
Erratum: An investigation of the properties of cubic GaN grown on GaAs by plasma‐assisted molecular‐beam epitaxy [J. Vac. Sci. Technol. B 9, 1924 (1991)]Strite, S. / Ruan, J. / Li, Z. / Manning, N. / Salvador, A. / Chen, H. / Smith, David J. / Choyke, W. J. / Morkoç, H. et al. | 1992
- 191
-
Photochemistry at adsorbate–metal interfaces: Issues and examplesWhite, J. M. et al. | 1992
- 196
-
Dissociative attachment and surface reactions induced by low‐energy electronsSanche, Léon et al. | 1992
- 201
-
Laser‐induced reactions of semiconductor surfacesQin, Q. Z. / Li, Y. L. / Lu, P. H. / Zhang, Z. J. / Jin, Z. K. / Zheng, Q. K. et al. | 1992
- 206
-
Ultraviolet laser‐induced interaction of Cl2 with GaAs(110)Haase, G. / Liberman, V. / Osgood, R. M. et al. | 1992
- 216
-
Pulsed ultraviolet laser stimulated chlorination mechanisms for Si(111)Paulsen‐Boaz, Carlotta / O’Brien, William L. / Rhodin, Thor et al. | 1992
- 221
-
Diethylsilane on silicon surfaces: Adsorption and decomposition kineticsCoon, P. A. / Wise, M. L. / Dillon, A. C. / Robinson, M. B. / George, S. M. et al. | 1992
- 228
-
Investigation of the laser‐Al2O3(112̄0) surface interaction using excitation by pairs of picosecond laser pulsesHamza, Alex V. / Hughes, Robert S. / Chase, L. L. / Lee, H. W. H. et al. | 1992
- 231
-
The interaction of synchrotron light with water adsorbed on a Ag‐field emitter in the presence of a high electric fieldDirks, J. / Drachsel, W. / Block, J. H. et al. | 1992
- 235
-
Arsenic passivation of silicon by photo‐assisted metalorganic vapor‐phase epitaxyRodway, D. C. / Mackey, K. J. / Smith, P. C. / Vere, A. W. et al. | 1992
- 239
-
Chemical vapor deposition of amorphous hydrogenated silicon: Chemistry–structure–performance relationshipsHess, Peter et al. | 1992
- 248
-
Continuous wave laser induced chemical reactions with integrated circuitsAuvert, Geoffroy et al. | 1992
- 256
-
Scanning tunneling microscopy studies on the growth and structure of thin metallic films on metal substratesHwang, R. Q. / Behm, R. J. et al. | 1992
- 262
-
Selective low pressure chemical vapor deposition of copper and platinumLecohier, B. / Philippoz, J.‐M. / van den Bergh, H. et al. | 1992
- 268
-
Rotationally anisotropic second‐harmonic generation studies of the structure and thermal stability of Cu(110)Hoffbauer, Mark A. / McVeigh, Victoria J. / Zuerlein, Michael J. et al. | 1992
- 274
-
Etching of film by synchrotron radiation in hydrogen and its application to low‐temperature surface cleaningNara, Yasuo / Sugita, Yoshihiro / Nakayama, Noriaki / Ito, Takashi et al. | 1992
- 278
-
Nanolithography and its prospects as a manufacturing technologyPease, R. F. W. et al. | 1992
- 289
-
Strategies for shallow junction and profile formationHill, Chris et al. | 1992
- 296
-
Measurements of abrupt transitions in III–V compounds and heterostructuresStreetman, B. G. / Shih, Y. C. et al. | 1992
- 302
-
On the determination of dopant/carrier distributionsVandervorst, W. / Clarysse, T. et al. | 1992
- 316
-
Cascade mixing limitations in sputter profilingHofmann, S. et al. | 1992
- 323
-
Secondary ion mass spectrometry analysis strategy for shallow junctions on test and product silicon wafersStevie, F. A. et al. | 1992
- 329
-
Shallow pnp profiling with a molecular ion probeRonsheim, P. A. / Fitzgibbon, G. et al. | 1992
- 333
-
Secondary ion mass spectrometry depth profiling of nanometer‐scale p+‐n junctions fabricated by Ga+ focused ion beam implantationNovak, Steven W. / Magee, Charles W. / Mogul, Homi C. / Steckl, A. J. / Pawlik, M. et al. | 1992
- 336
-
Secondary ion mass spectrometry depth profiling of boron, antimony, and germanium deltas in silicon and implications for profile deconvolutionDowsett, M. G. / Barlow, R. D. / Fox, H. S. / Kubiak, R. A. A. / Collins, R. et al. | 1992
- 342
-
Evaluation of polyencapsulation, oxygen leak, and low energy ion bombardment in the reduction of secondary ion mass spectrometry surface ion yield transientsCorcoran, S. F. / Felch, S. B. et al. | 1992
- 348
-
Qualification and application of profiling data for model development and characterizationWu, Sheldon / Chien, Ling‐Chu et al. | 1992
- 353
-
Two dimensional profiling using secondary ion mass spectrometryDowsett, M. G. / Cooke, G. A. et al. | 1992
- 358
-
Methods for the measurement of two‐dimensional doping profilesSubrahmanyan, Ravi et al. | 1992
- 369
-
Reconstructed two‐dimensional doping profiles from multiple one‐dimensional secondary ion mass spectrometry measurementsGoodwin‐Johansson, Scott H. / Ray, Mark / Kim, Yudong / Massoud, H. Z. et al. | 1992
- 380
-
Photoionization of sputtered neutrals for reliable and sensitive depth profilesBecker, C. H. / MacKay, S. G. / Welkie, D. G. et al. | 1992
- 385
-
Quantitative depth profiling resonance ionization mass spectrometry of GaAs/AlGaAs heterojunction bipolar transistorsDowney, S. W. / Emerson, A. B. / Kopf, R. F. et al. | 1992
- 388
-
Spreading resistance:A quantitative tool for process control and developmentPawlik, Marek et al. | 1992
- 397
-
Poisson‐based analysis of spreading resistance profilesMazur, R. G. et al. | 1992
- 408
-
Incremental sheet resistance and spreading resistance: A comparisonQueirolo, G. / Polignano, M. L. et al. | 1992
- 413
-
A contact model for Poisson‐based spreading resistance correction schemes incorporating Schottky barrier and pressure effectsClarysse, T. / Vandervorst, W. et al. | 1992
- 421
-
Dopant profile extraction from spreading resistance measurementsMathur, Rajiv et al. | 1992
- 426
-
Spreading resistance analysis with carrier spilling correctionLeong, M. S. / Choo, S. C. / Lee, Y. T. / Ong, H. L. / Ng, K. P. et al. | 1992
- 432
-
A new spreading resistance correction scheme combining variable radius and barrier resistance with epilayer matchingClarysse, T. / Vandervorst, W. et al. | 1992
- 438
-
A Poisson solver for spreading resistance analysisDickey, D. H. et al. | 1992
- 442
-
Electrical characterization of shallow arsenic profiles using SRP2Subrahmanyan, Ravi / Berkowitz, H. / Heddleson, J. / Rai‐Choudhury, P. et al. | 1992
- 449
-
Two‐dimensional carrier profilingVandervorst, W. / Clarysse, T. / Vanhellemont, J. / Romano‐Rodriguez, A. et al. | 1992
- 456
-
Profiling of composition and carrier concentration in AlxGa1−xAs by point contact techniquesChong, T. C. / Hillard, R. J. / Heddleson, J. M. / Rai‐Choudhury, P. / Moore, W. T. / SpringThorpe, A. J. et al. | 1992
- 463
-
Carrier diffusion effects in III–V semiconductor structures measured by the point contact current voltage techniqueEldridge, G. W. / Berkowitz, H. L. / Hillard, R. J. / Heddleson, J. M. / Rai‐Choudhury, P. / Mazur, R. G. / Stillman, G. E. et al. | 1992
- 468
-
Measurement of ultra‐abrupt doping transitions using capacitance versus voltage techniquesSadwick, L. P. / Hwu, R. J. / Streit, D. C. / Jones, W. L. / Tan, K. L. / Velebir, J. R. / Yen, H. C. et al. | 1992
- 474
-
Practical implementation of metal oxide semiconductor capacitor majority carrier corrected dopant profilingAnders, B. et al. | 1992
- 480
-
Optimization of the capacitance–voltage profiling method based on inverse modelingIniewski, K. / Salama, C. A. T. et al. | 1992
- 485
-
Numerical extraction of ultra‐shallow one‐dimensional metal–oxide–semiconductor doping profiles from capacitance–voltage measurementsOsse, A. L. M. / Krusius, J. P. et al. | 1992
- 491
-
Two‐dimensional delineation of shallow junctions in silicon by selective etching of transmission electron microscopy cross sectionsCerva, Hans et al. | 1992
- 496
-
Two‐dimensional pn‐junction delineation on cleaved silicon samples with an ultrahigh vacuum scanning tunneling microscopeKordić, S. / van Loenen, E. J. / Walker, A. J. et al. | 1992
- 502
-
Model and simulation of scanning tunneling microscope tip/semiconductor interactions in pn junction delineationChapman, Richard / Kellam, Mark / Goodwin‐Johansson, Scott / Russ, John / McGuire, G. E. / Kjoller, Kevin et al. | 1992
- 508
-
Scanning tunneling microscopy and spectroscopy for studying cross‐sectioned Si(100)Johnson, M. B. / Halbout, J.‐M. et al. | 1992
- 515
-
Shallow junctions for 0.1 μm n‐type metal–oxide semiconductor devicesWatts, R. K. / Luftman, H. S. / Baiocchi, F. A. et al. | 1992
- 524
-
Secondary ion mass spectrometry–spreading resistance profiling study on the outdiffusion from poly‐ and monocrystalline cobaltsilicideElst, K. / Vandervorst, W. / Clarysse, T. / Eichhammer, W. / Maex, K. et al. | 1992
- 533
-
Profiling of ultra‐shallow complementary metal–oxide semiconductor junctions using spreading resistance: A comparison to secondary ion mass spectrometryOsburn, C. M. / Berkowitz, H. L. / Heddleson, J. M. / Hillard, R. J. / Mazur, R. G. / Rai‐Choudhury, P. et al. | 1992
- 540
-
Measurement of defect profiles in reactive ion etched siliconBenton, J. L. / Weir, B. E. / Eaglesham, D. J. / Gottscho, R. A. / Michel, J. / Kimerling, L. C. et al. | 1992
- 544
-
Lateral and in‐depth junction delineation of buried Sb‐doped layers following silicidationHoneycutt, J. W. / Rozgonyi, G. A. et al. | 1992