Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit (Englisch)
- Neue Suche nach: Hoke, W. E.
- Neue Suche nach: Chelakara, R. V.
- Neue Suche nach: Bettencourt, J. P.
- Neue Suche nach: Kazior, T. E.
- Neue Suche nach: LaRoche, J. R.
- Neue Suche nach: Kennedy, T. D.
- Neue Suche nach: Mosca, J. J.
- Neue Suche nach: Torabi, A.
- Neue Suche nach: Kerr, A. J.
- Neue Suche nach: Lee, H.-S.
- Neue Suche nach: Palacios, T.
- Neue Suche nach: Hoke, W. E.
- Neue Suche nach: Chelakara, R. V.
- Neue Suche nach: Bettencourt, J. P.
- Neue Suche nach: Kazior, T. E.
- Neue Suche nach: LaRoche, J. R.
- Neue Suche nach: Kennedy, T. D.
- Neue Suche nach: Mosca, J. J.
- Neue Suche nach: Torabi, A.
- Neue Suche nach: Kerr, A. J.
- Neue Suche nach: Lee, H.-S.
- Neue Suche nach: Palacios, T.
In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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30
, 2
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6
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2012
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit
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Weitere Titelangaben:Monolithic integration of silicon CMOS and GaN transistors
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Beteiligte:Hoke, W. E. ( Autor:in ) / Chelakara, R. V. ( Autor:in ) / Bettencourt, J. P. ( Autor:in ) / Kazior, T. E. ( Autor:in ) / LaRoche, J. R. ( Autor:in ) / Kennedy, T. D. ( Autor:in ) / Mosca, J. J. ( Autor:in ) / Torabi, A. ( Autor:in ) / Kerr, A. J. ( Autor:in ) / Lee, H.-S. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.03.2012
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Format / Umfang:6 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 30, Ausgabe 2
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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InGaN laser diodes operating at 450-460 nm grown by rf-plasma MBE 02B102Skierbiszewski, C et al. | 2012
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Shallow defect states in GaAs responsible for GaAs bandgap upconversion induced by electron beam during MBE growth 02B120Tex, David M et al. | 2012
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Dopant depletion in the near surface region of thermally prepared silicon (100) in UHV 021806Pitters, Jason L et al. | 2012
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Successful growth of Cu2Se-free CuGaSe2 by migration-enhanced epitaxy 02B126Fujita, Miki et al. | 2012
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Comparison of tunnel junctions for cascaded InAs/GaSb superlattice light emitting diodesMurray, L. M. / Norton, D. T. / Olesberg, J. T. / Boggess, T. F. / Prineas, J. P. et al. | 2012
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Wafer level critical dimension control in spacer-defined double patterning for sub-72 nm pitch logic technologya)Kim, Ryoung-han / Watso, Robert / van Dommelen, Youri / Finders, Jo / Colburn, Matthew E. / Levinson, Harry J. et al. | 2012
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Advanced nanodiamond emitter with pyramidal tip-on-pole structure for emission self-regulationWisitsora-at, Anurat / Hsu, Shao-Hua / Kang, Weng P. / Davidson, Jimmy L. / Tuantranont, Adisorn et al. | 2012
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Structural properties of InAs/InAs1–xSbx type-II superlattices grown by molecular beam epitaxyOuyang, Lu / Steenbergen, Elizabeth H. / Zhang, Yong-Hang / Nunna, Kalyan / Huffaker, Diana L. / Smith, David J. et al. | 2012
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Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxyLuna, E. / Hey, R. / Trampert, A. et al. | 2012
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Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxyStorm, D. F. / Meyer, D. J. / Katzer, D. S. / Binari, S. C. / Paskova, Tanya / Preble, E. A. / Evans, K. R. / Zhou, Lin / Smith, David J. et al. | 2012
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Electrical properties of C60 and Si codoped GaAs layersNishinaga, Jiro / Horikoshi, Yoshiji et al. | 2012
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InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectricsLin, C. A. / Huang, M. L. / Chiu, P.-C. / Lin, H.-K. / Chyi, J.-I. / Chiang, T. H. / Lee, W. C. / Chang, Y. C. / Chang, Y. H. / Brown, G. J. et al. | 2012
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Shallow defect states in GaAs responsible for GaAs bandgap upconversion induced by electron beam during MBE growthTex, David M. / Kamiya, Itaru et al. | 2012
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Optical and electrical properties of Si-doped GaAs films grown on (631)-oriented substratesVázquez-Cortés, D. / Cruz-Hernández, E. / Méndez-García, V. H. / Shimomura, S. / López-López, M. et al. | 2012
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Letters - Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-face n-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers 020601Jeon, Joon-Woo et al. | 2012
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Structural properties of InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy 02B106Ouyang, Lu et al. | 2012
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Process effects of copper film over a step etched with a plasma-based process 021204Lin, Chi-Chou et al. | 2012
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Nanometer Science & Technology - Emission properties of carbon nanowalls on porous silicon 021801Evlashin, Stanislav A et al. | 2012
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Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device 02B123Chang, W H et al. | 2012
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MBE growth and characterization of Mn-doped InN 02B124Chai, Jessica H et al. | 2012
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100 keV electron backscattered range and coefficient for siliconCzaplewski, David A. / Ocola, Leonidas E. et al. | 2012
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Stress mapping in strain-engineered silicon p-type MOSFET device: A comparison between process simulation and experimentsKrzeminski, Christophe D. et al. | 2012
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Molecular beam epitaxial growth and characterization of nitrogen δ-doped AlGaAs/GaAs quantum wellsFuruse, Shin-ichiro / Sumiya, Kengo / Morifuji, Masato / Ishikawa, Fumitaro et al. | 2012
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Application of GaInNAs for the gain medium of a photonic crystal microcavityNagatomo, H. / Kukita, K. / Goto, H. / Nakao, R. / Nakano, K. / Ishikawa, F. / Morifuji, M. / Kondow, M. et al. | 2012
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Resistive switching of HfO2 based flexible memories fabricated by low temperature atomic layer depositiona)Fang, R. C. / Wang, L. H. / Yang, W. / Sun, Q. Q. / Zhou, P. / Wang, P. F. / Ding, S. J. / Zhang, David W. et al. | 2012
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Scanning tunneling microscope-based local electroluminescence spectroscopy of p-AlGaAs/i-GaAs/n-AlGaAs double heterostructureWatanabe, Kentaro / Ichikawa, Masakazu / Nakamura, Yoshiaki / Kuboya, Shigeyuki / Katayama, Ryuji / Onabe, Kentaro et al. | 2012
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Molecular beam epitaxy control and photoluminescence properties of InAsBiSvensson, S. P. / Hier, H. / Sarney, W. L. / Donetsky, D. / Wang, D. / Belenky, G. et al. | 2012
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Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111)Dargis, Rytis / Arkun, Erdem / Clark, Andrew / Roucka, Radek / Smith, Robin / Williams, David / Lebby, Michael / Demkov, Alexander A. et al. | 2012
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Molecular beam epitaxy growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiencyZhang, Wei / Nikiforov, A. Yu. / Thomidis, C. / Woodward, J. / Sun, H. / Kao, Chen-Kai / Bhattarai, D. / Moldawer, A. / Zhou, L. / Smith, D. J. et al. | 2012
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CUMULATIVE AUTHOR INDEX| 2012
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Electronic & Optoelectronic Materials, Devices & Processing - Characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF3 and CF4 surface treatment 021201Chen, C H et al. | 2012
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Wafer level critical dimension control in spacer-defined double patterning for sub-72 nm pitch logic technology 021602Kim, Ryoung-han et al. | 2012
-
Growth of GaNxASyP1-x-y alloys on GaP(100) by gas-source molecular beam epitaxy 02B121Kuang, Yan-Jin et al. | 2012
-
Advanced nanodiamond emitter with pyramidal tip-on-pole structure for emission self-regulation 022204Wisitsora-at, Anurat et al. | 2012
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GaN surface electron field emission efficiency enhancement by low-energy photon illumination 022206Evtukh, Anatoli et al. | 2012
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AUTHOR INDEX| 2012
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Structural and luminescent properties of bulk InAsSb 02B105Sarney, W L et al. | 2012
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Comparison of tunnel junctions for cascaded InAs/GaSb superlattice light emitting diodes 021203Murray, L M et al. | 2012
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Photoluminescence study of self-assembled GaAs quantum wires on (631)A-oriented GaAs substrates 02B111Cruz-Hernández, E et al. | 2012
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100 keV electron backscattered range and coefficient for silicon 021604Czaplewski, David A et al. | 2012
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Study of Ti etching and selectivity mechanism in fluorocarbon plasmas for dielectric etch 021804Weilnboeck, F et al. | 2012
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Work function extraction of metal gates with alternate channel materials 022202Coan, Mary et al. | 2012
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Application of GaInNAs for the gain medium of a photonic crystal microcavity 02B127Nagatomo, H et al. | 2012
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Nanoscale scratching of platinum thin films using atomic force microscopy with DLC tipsJiang, Xiaohong / Wu, Guoyun / Du, Zuliang / Ma, Keng-Jeng / Shirakashi, Jun-ichi / Tseng, Ampere A. et al. | 2012
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First-principles study of field-emission from carbon nanotubes in the presence of methaneKashefian Naieni, Ali / Yaghoobi, Parham / Nojeh, Alireza et al. | 2012
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Simulation of the electron field emission characteristics of a flat panel x-ray sourcePosada, Chrystian M. / Castaño, Carlos H. / Grant, Edwin J. / Lee, Hyoung K. et al. | 2012
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InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBEa)Skierbiszewski, C. / Siekacz, M. / Turski, H. / Muzioł, G. / Sawicka, M. / Feduniewicz-Żmuda, A. / Smalc-Koziorowska, J. / Perlin, P. / Grzanka, S. / Wasilewski, Z. R. et al. | 2012
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Automating tumor classification with pixel-by-pixel contrast-enhanced ultrasound perfusion kineticsTa, Casey N. / Kono, Yuko / Barback, Christopher V. / Mattrey, Robert F. / Kummel, Andrew C. et al. | 2012
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Emission properties of carbon nanowalls on porous siliconEvlashin, Stanislav A. / Mankelevich, Yuri A. / Borisov, Vladimir V. / Pilevskii, Andrey A. / Stepanov, Anton S. / Krivchenko, Victor A. / Suetin, Nikolai V. / Rakhimov, Alexander T. et al. | 2012
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Study of Ti etching and selectivity mechanism in fluorocarbon plasmas for dielectric etchWeilnboeck, F. / Bartis, E. / Shachar, S. / Oehrlein, G. S. / Farber, D. / Lii, T. / Lenox, C. et al. | 2012
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Dopant depletion in the near surface region of thermally prepared silicon (100) in UHVPitters, Jason L. / Piva, Paul G. / Wolkow, Robert A. et al. | 2012
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Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy 02B113Storm, D F et al. | 2012
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InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics 02B118Lin, C A et al. | 2012
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Influence of temperature ramp on the materials properties of GaSb grown on ZnTe using molecular beam epitaxy 02B122Fan, Jin et al. | 2012
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Erratum: "Method to pattern etch masks in two inclined planes for three-dimensional nano- and microfabrication" [J. Vac. Sci. Technol. B 29(6), 061604 (2011)] 023401Willem Tjerkstra, R et al. | 2012
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Plasmonics - Planar-localized surface plasmon resonance device by block-copolymer and nanoimprint lithography fabrication methods 026801Peter Yang, C Y et al. | 2012
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Characterization of Bi2Te3 and Bi2Se3 topological insulators grown by MBE on (001) GaAs substrates 02B103Liu, Xinyu et al. | 2012
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Magnetic anisotropy of GaAs/Fe/Au core-shell nanowires grown by MBE 02B115Tivakornsasithorn, K et al. | 2012
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First-principles study of field-emission from carbon nanotubes in the presence of methane 021803Kashefian Naieni, Ali et al. | 2012
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Scanning tunneling microscope-based local electroluminescence spectroscopy of p-AlGaAs/i-GaAs/n-AlGaAs double heterostructure 021802Watanabe, Kentaro et al. | 2012
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Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7–4.9 μm infrared materialsYildirim, Asli / Prineas, John P. et al. | 2012
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Analysis of defect-free GaSb/GaAs(001) quantum dots grown on the Sb-terminated (2 × 8) surfaceMartin, Andrew J. / Saucer, Timothy W. / Sun, Kai / Joo Kim, Sung / Ran, Guang / Rodriguez, Garrett V. / Pan, Xiaoqing / Sih, Vanessa / Millunchick, Joanna et al. | 2012
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Magnetic anisotropy of GaAs/Fe/Au core-shell nanowires grown by MBETivakornsasithorn, K. / Pimpinella, R. E. / Nguyen, V. / Liu, X. / Dobrowolska, M. / Furdyna, J. K. et al. | 2012
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MBE growth and characterization of Mn-doped InNChai, Jessica H. / Myers, Thomas H. / Song, Young-Wook / Reeves, Roger J. / Linhart, Wojciech M. / Morris, Richard J. H. / Veal, Timothy D. / Dowsett, Mark G. / McConville, Christopher F. / Durbin, Steven M. et al. | 2012
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RHEED transients during InAs quantum dot growth by MBEShimomura, K. / Shirasaka, T. / Tex, D. M. / Yamada, F. / Kamiya, I. et al. | 2012
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Integrated processing of contrast pulse sequencing ultrasound imaging for enhanced active contrast of hollow gas filled silica nanoshells and microshellsTa, Casey N. / Liberman, Alexander / Paul Martinez, H. / Barback, Christopher V. / Mattrey, Robert F. / Blair, Sarah L. / Trogler, William C. / Kummel, Andrew C. / Wu, Zhe et al. | 2012
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Mechanism of Ohmic Cr/Ni/Au contact formation on p-GaN 022205Magdenko, Liubov et al. | 2012
-
Resistive switching of HfO2 based flexible memories fabricated by low temperature atomic layer deposition 020602Fang, R C et al. | 2012
-
Influence of hydrogen on the thermionic electron emission from nitrogen-incorporated polycrystalline diamond films 021202Paxton, W F et al. | 2012
-
Molecular beam epitaxy control and photoluminescence properties of InAsBi 02B109Svensson, S P et al. | 2012
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Molecular beam epitaxy growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiency 02B119Zhang, Wei et al. | 2012
-
Optical and electrical properties of Si-doped GaAs films grown on (631)-oriented substrates 02B125Vázquez-Cortés, D et al. | 2012
-
Characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF3 and CF4 surface treatmentChen, C. H. / Yang, C. W. / Chiu, H. C. / Fu, Jeffrey. S. et al. | 2012
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Probing temporal evolution of extreme ultraviolet assisted contamination on Ru mirror by x-ray photoelectron spectroscopyAl-Ajlony, A. / Kanjilal, A. / Catalfano, M. / Fields, M. / Harilal, S. S. / Hassanein, A. / Rice, B. et al. | 2012
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Influence of temperature ramp on the materials properties of GaSb grown on ZnTe using molecular beam epitaxyFan, Jin / Ouyang, Lu / Liu, Xinyu / Ding, Ding / Furdyna, Jacek K. / Smith, David J. / Zhang, Yong-Hang et al. | 2012
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RHEED transients during InAs quantum dot growth by MBE 02B128Shimomura, K et al. | 2012
-
Integrated processing of contrast pulse sequencing ultrasound imaging for enhanced active contrast of hollow gas filled silica nanoshells and microshells 02C104Ta, Casey N et al. | 2012
-
Automating tumor classification with pixel-by-pixel contrast-enhanced ultrasound perfusion kinetics 02C103Ta, Casey N et al. | 2012
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Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxy 02B108Luna, E et al. | 2012
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Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111) 02B110Dargis, Rytis et al. | 2012
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Morphology of inkjet printed 6,13 bis(tri-isopropylsilylethynyl) pentacene on surface-treated silica 021206Wang, Xiang Hua et al. | 2012
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Analysis of defect-free GaSb/GaAs(001) quantum dots grown on the Sb-terminated (2 × 8) surface 02B112Martin, Andrew J et al. | 2012
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Lithography - Probing temporal evolution of extreme ultraviolet assisted contamination on Ru mirror by x-ray photoelectron spectroscopy 021601Al-Ajlony, A et al. | 2012
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Nanoscale scratching of platinum thin films using atomic force microscopy with DLC tips 021605Jiang, Xiaohong et al. | 2012
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Microelectronic & Nanoelectronic Devices - Simulation of the electron field emission characteristics of a flat panel x-ray source 022201Posada, Chrystian M et al. | 2012
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Externally triggered on-demand drug release and deep tumor penetration 02C102Kong, Seong Deok et al. | 2012
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Process effects of copper film over a step etched with a plasma-based processLin, Chi-Chou / Kuo, Yue et al. | 2012
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Magnetophoretic assembly and printing of nanowiresWright, Andrew C. / Faulkner, Michael et al. | 2012
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Characterization of carbon nanotube film-silicon Schottky barrier photodetectorsAn, Yanbin / Rao, Hemant / Bosman, Gijs / Ural, Ant et al. | 2012
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Electron emission Si-based resonant-tunneling diodeEvtukh, A. / Litovchenko, V. / Goncharuk, N. / Mimura, H. et al. | 2012
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Strain-balanced InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates 02B107Steenbergen, Elizabeth H et al. | 2012
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Electrical properties and radiation detector performance of free-standing bulk n-GaN 021205Lee, In-Hwan et al. | 2012
-
Electrical properties of C60 and Si codoped GaAs layers 02B116Nishinaga, Jiro et al. | 2012
-
Morphology of inkjet printed 6,13 bis(tri-isopropylsilylethynyl) pentacene on surface-treated silicaWang, Xiang Hua / Xiong, Xian Feng / Qiu, Long Zhen / Qiang Lv, Guo et al. | 2012
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Behavioral model for electrical response and strain sensitivity of nanotube-based nanocomposite materialsAmini, Alborz / Bahreyni, Behraad et al. | 2012
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GaN surface electron field emission efficiency enhancement by low-energy photon illuminationEvtukh, Anatoli / Yilmazoglu, Oktay / Litovchenko, Vladimir / Ievtukh, Valery / Hartnagel, Hans L. / Pavlidis, Dimitris et al. | 2012
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Erratum: “Method to pattern etch masks in two inclined planes for three-dimensional nano- and microfabrication” [Willem Tjerkstra, R. / Woldering, Léon A. / van den Broek, Johanna M. / Roozeboom, Fred / Setija, Irwan D. / Vos, Willem L. et al. | 2012
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Successful growth of Cu2Se-free CuGaSe2 by migration-enhanced epitaxyFujita, Miki / Sato, Tomohiro / Kitada, Tsuyoshi / Kawaharazuka, Atsushi / Horikoshi, Yoshiji et al. | 2012
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Ultra-high vacuum deposition and characterization of silicon nitride thin filmsKatzer, D. S. / Meyer, D. J. / Storm, D. F. / Mittereder, J. A. / Bermudez, V. M. / Cheng, S. F. / Jernigan, G. G. / Binari, S. C. et al. | 2012
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Molecular beam epitaxial growth and characterization of nitrogen δ-doped AlGaAs/GaAs quantum wells 02B117Furuse, Shin-ichiro et al. | 2012
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MEMS & NEMS - Behavioral model for electrical response and strain sensitivity of nanotube-based nanocomposite materials 022001Amini, Alborz et al. | 2012
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Mechanism of Ohmic Cr/Ni/Au contact formation on p-GaNMagdenko, Liubov / Patriarche, Gilles / Troadec, David / Mauguin, Olivia / Morvan, Erwan / di Forte-Poisson, Marie-Antoinette / Pantzas, Konstantinos / Ougazzaden, Abdallah / Martinez, Anthony / Ramdane, Abderrahim et al. | 2012
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Planar-localized surface plasmon resonance device by block-copolymer and nanoimprint lithography fabrication methodsPeter Yang, C. Y. / Yang, Elaine L. / Steinhaus, Chip A. / Liu, Chi-Chun / Nealey, Paul F. / Skinner, Jack L. et al. | 2012
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Structural and luminescent properties of bulk InAsSbSarney, W. L. / Svensson, S. P. / Hier, H. / Kipshidze, G. / Donetsky, D. / Wang, D. / Shterengas, L. / Belenky, G. et al. | 2012
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Strain-balanced InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substratesSteenbergen, Elizabeth H. / Nunna, Kalyan / Ouyang, Lu / Ullrich, Bruno / Huffaker, Diana L. / Smith, David J. / Zhang, Yong-Hang et al. | 2012
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Photoluminescence study of self-assembled GaAs quantum wires on (631)A-oriented GaAs substratesCruz-Hernández, E. / Vázquez-Cortés, D. / Cisneros-de-la-Rosa, A. / López-Luna, E. / Méndez-García, V. H. / Shimomura, S. et al. | 2012
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Growth of GaNxAsyP1−x−y alloys on GaP(100) by gas-source molecular beam epitaxyKuang, Yan-Jin / Chen, San-Wen / Li, Hua / Sinha, Sunil K. / Tu, Charles Wuching / 邝彦瑾 / 陳尚文 / 李华 et al. | 2012
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Optimization of Ohmic metal contacts for advanced GaAs-based CMOS deviceChang, W. H. / Chiang, T. H. / Lin, T. D. / Chen, Y. H. / Wu, K. H. / Huang, T. S. / Hong, M. / Kwo, J. et al. | 2012
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Externally triggered on-demand drug release and deep tumor penetrationDeok Kong, Seong / Zhang, Weizhou / Hee Lee, Jun / Choi, Chulmin / Khamwannah, Jirapon / Karin, Michael / Jin, Sungho et al. | 2012
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Structural and magnetic characterization of superparamagnetic iron platinum nanoparticle contrast agents for magnetic resonance imagingTaylor, Robert M. / Huber, Dale L. / Monson, Todd C. / Esch, Victor / Sillerud, Laurel O. et al. | 2012
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Influence of hydrogen on the thermionic electron emission from nitrogen-incorporated polycrystalline diamond filmsPaxton, W. F. / Howell, M. / Kang, W. P. / Davidson, J. L. et al. | 2012
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Work function extraction of metal gates with alternate channel materialsCoan, Mary / Johnson, Derek / Hwan Woo, Jung / Biswas, Nivedita / Misra, Veena / Majhi, Prashant / Rusty Harris, H. et al. | 2012
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Characterization of Bi2Te3 and Bi2Se3 topological insulators grown by MBE on (001) GaAs substratesLiu, Xinyu / Smith, David J. / Cao, Helin / Chen, Yong P. / Fan, Jin / Zhang, Yong-Hang / Pimpinella, Richard E. / Dobrowolska, Malgorzata / Furdyna, Jacek K. et al. | 2012
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Electron emission Si-based resonant-tunneling diode 022207Evtukh, A et al. | 2012
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Special Issue: Nanoscience in Cancer Research - Structural and magnetic characterization of superparamagnetic iron platinum nanoparticle contrast agents for magnetic resonance imaging 02C101Taylor, Robert M et al. | 2012
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PAPERS FROM THE 28TH NORTH AMERICAN MOLECULAR BEAM EPITAXY CONFERENCE - Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit 02B101Hoke, W E et al. | 2012
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Growth of GaSb1-xBix by molecular beam epitaxy 02B114Song, Yuxin et al. | 2012
-
Magnetophoretic assembly and printing of nanowires 021603Wright, Andrew C et al. | 2012
-
Characterization of carbon nanotube film-silicon Schottky barrier photodetectors 021805An, Yanbin et al. | 2012
-
Stress mapping in strain-engineered silicon p-type MOSFET device: A comparison between process simulation and experiments 022203Krzeminski, Christophe D et al. | 2012
-
Ultra-high vacuum deposition and characterization of silicon nitride thin films 02B129Katzer, D S et al. | 2012
-
Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7-4.9 μm infrared materials 02B104Yildirim, Asli et al. | 2012
-
Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-face n-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layersJeon, Joon-Woo / Yum, Woong-Sun / Seong, Tae-Yeon / Youl Lee, Sang / Song, June-O et al. | 2012
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Electrical properties and radiation detector performance of free-standing bulk n-GaNLee, In-Hwan / Polyakov, A. Y. / Smirnov, N. B. / Govorkov, A. V. / Kozhukhova, E. A. / Zaletin, V. M. / Gazizov, I. M. / Kolin, N. G. / Pearton, S. J. et al. | 2012
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Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuitHoke, W. E. / Chelakara, R. V. / Bettencourt, J. P. / Kazior, T. E. / LaRoche, J. R. / Kennedy, T. D. / Mosca, J. J. / Torabi, A. / Kerr, A. J. / Lee, H.-S. et al. | 2012
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Growth of GaSb1−xBix by molecular beam epitaxySong, Yuxin / Wang, Shumin / Saha Roy, Ivy / Shi, Peixiong / Hallen, Anders / 宋禹忻 et al. | 2012