The EL2-like metastable defect and the n- to p-type transition in silicon planar-doped GaAs (Englisch)
Nationallizenz
- Neue Suche nach: da Silva, M. I. N.
- Neue Suche nach: de Oliveira, A. G.
- Neue Suche nach: Ribeiro, G. M.
- Neue Suche nach: Rubinger, R. M.
- Neue Suche nach: Corre⁁a, J. A.
- Neue Suche nach: Baeta Moreira, M. V.
- Neue Suche nach: da Silva, M. I. N.
- Neue Suche nach: de Oliveira, A. G.
- Neue Suche nach: Ribeiro, G. M.
- Neue Suche nach: Rubinger, R. M.
- Neue Suche nach: Corre⁁a, J. A.
- Neue Suche nach: Baeta Moreira, M. V.
In:
Journal of Applied Physics
;
82
, 7
;
3346-3350
;
1997
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:The EL2-like metastable defect and the n- to p-type transition in silicon planar-doped GaAs
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Beteiligte:da Silva, M. I. N. ( Autor:in ) / de Oliveira, A. G. ( Autor:in ) / Ribeiro, G. M. ( Autor:in ) / Rubinger, R. M. ( Autor:in ) / Corre⁁a, J. A. ( Autor:in ) / Baeta Moreira, M. V. ( Autor:in )
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Erschienen in:Journal of Applied Physics ; 82, 7 ; 3346-3350
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Verlag:
- Neue Suche nach: American Institute of Physics
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Erscheinungsdatum:01.10.1997
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 82, Ausgabe 7
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