Wet‐developed bilayer resists for 193‐nm excimer laser lithography (Englisch)
- Neue Suche nach: Kunz, R. R.
- Neue Suche nach: Horn, M. W.
- Neue Suche nach: Bianconi, P. A.
- Neue Suche nach: Smith, D. A.
- Neue Suche nach: Eshelman, J. R.
- Neue Suche nach: Kunz, R. R.
- Neue Suche nach: Horn, M. W.
- Neue Suche nach: Bianconi, P. A.
- Neue Suche nach: Smith, D. A.
- Neue Suche nach: Eshelman, J. R.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
;
10
, 6
;
2554-2559
;
1992
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Wet‐developed bilayer resists for 193‐nm excimer laser lithography
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Weitere Titelangaben:Wet‐developed bilayer resists for 193‐nm excimer laser lithography
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Beteiligte:Kunz, R. R. ( Autor:in ) / Horn, M. W. ( Autor:in ) / Bianconi, P. A. ( Autor:in ) / Smith, D. A. ( Autor:in ) / Eshelman, J. R. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.11.1992
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Format / Umfang:6 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 10, Ausgabe 6
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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- 2496
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Erratum: ‘‘GaSb‐oxide removal and surface passivation using an electron cyclotron resonance hydrogen source’’ [J. Vac. Sci. Technol. B 10, 1856 (1992)]Lu, Z. / Jiang, Y. / Wang, W. I. / Teich, M. C. / Osgood, R. M. et al. | 1992
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Electron beam writing of continuous resist profiles for optical applicationsStauffer, J. M. / Oppliger, Y. / Regnault, P. / Baraldi, L. / Gale, M. T. et al. | 1992
- 2530
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Characterization of near‐field holography grating masks for optoelectronics fabricated by electron beam lithographyTennant, D. M. / Koch, T. L. / Mulgrew, P. P. / Gnall, R. P. / Ostermeyer, F. / Verdiell, J‐M. et al. | 1992
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Process optimization of 200 nm wide trenches in SiO2 using a chemically amplified acid catalyzed e‐beam resistKocon, Waldemar W. / Shacham‐Diamand, Y. / Frechet, Jean M. J. / Fahey, James et al. | 1992
- 2554
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Wet‐developed bilayer resists for 193‐nm excimer laser lithographyKunz, R. R. / Horn, M. W. / Bianconi, P. A. / Smith, D. A. / Eshelman, J. R. et al. | 1992
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Defect studies on single and bilayer resist systemsMuller, K. Paul / Sachdev, Harbans S. et al. | 1992
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Negative i‐line photoresist for 0.5 μm and beyondConley, Willard / Gelorme, Jeffery et al. | 1992
- 2576
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0.35 μm rule device pattern fabrication using high absorption‐type novolac photoresist in single layer deep ultraviolet lithography: Surface image transfer for contact hole fabricationTomo, Y. / Kasuga, T. / Saito, M. / Someya, A. / Tsumori, T. et al. | 1992
- 2581
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New model of polymer silylation: Application to lithographyPierrat, C. et al. | 1992
- 2589
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Fabrication of submicron conducting and chemically functionalized structures from poly(3‐octylthiophene) by an electron beamCai, Sui Xiong / Kanskar, Manoj / Nabity, J. C. / Keana, John F. W. / Wybourne, M. N. et al. | 1992
- 2593
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Characterization of chemically amplified resists for soft x‐ray projection lithographyKubiak, Glenn D. / Kneedler, Eric M. / Hwang, Robert Q. / Schulberg, Michelle T. / Berger, Kurt W. / Bjorkholm, J. E. / Mansfield, W. M. et al. | 1992
- 2600
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Characterization of AZ PN114 resist for high resolution using electron‐beam and soft‐x‐ray projection lithographiesEarly, K. / Tennant, D. M. / Jeon, D. Y. / Mulgrew, P. P. / MacDowell, A. A. / Wood, O. R. et al. | 1992
- 2606
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Application of a new analytical technique of electron distribution calculations to the profile simulation of a high sensitivity negative electron‐beam resistGlezos, N. / Raptis, I. / Tsoukalas, D. / Hatzakis, M. et al. | 1992
- 2610
-
Wet silylation and dry development with the AZ 5214TM photoresistGogolides, Evangelos / Tsoi, Elizabeth / Nassiopoulos, Androula G. / Hatzakis, Michael et al. | 1992
- 2615
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Acid‐diffusion effect on nanofabrication in chemical amplification resistYoshimura, Toshiyuki / Nakayama, Yoshinori / Okazaki, Shinji et al. | 1992
- 2620
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Single layer chemically amplified resist processes for device fabrication by x‐ray lithographySeeger, D. / Viswanathan, R. / Blair, C. / Gelorme, J. / Conley, W. et al. | 1992
- 2628
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Spatial correlation of electron‐beam mask errors and the implications for integrated circuit yieldBerglund, C. N. / Maluf, N. I. / Ye, Jun / Owen, G. / Browning, R. / Pease, R. F. W. et al. | 1992
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Dynamic performance of a scanning X–Y stage for automated electron‐beam inspectionClark, D. J. / McMurtry, J. / Chadwick, C. / Simmons, R. / Meisburger, W. D. / Veneklasen, L. / Chitayat, A. / Squires, S. / Squires, W. / Levine, M. et al. | 1992
- 2643
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Analytical description of backscattered electron signal for high‐resolution metrologyDi Fabrizio, E. / Luciani, L. / Grella, L. / Baciocchi, M. / Gentili, M. / Mastrogiacomo, L. / Maggiora, R. / White, V. et al. | 1992
- 2648
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Simple metrology scheme with nanometer resolution employed to check the accuracy of an electron beam lithography systemHübner, B. / Koops, H. W. P. et al. | 1992
- 2653
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Pattern placement metrology precision evaluationNash, S. C. / Fecteau, T. J. / Cook, J. S. et al. | 1992
- 2657
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Novel x‐ray mask distortion measurement technique employing holographic gratings and phase‐shifting interferometryHansen, M. E. / Chen, H. T. H. / Chen, G. / Engelstad, R. L. / Cerrina, F. et al. | 1992
- 2662
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- 2667
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- 2685
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- 2690
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- 2695
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- 2699
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Large radius new etching system using electron beam excited plasmaAoyagi, Y. / Hara, T. / Hamagaki, M. / Ryoji, M. / Ohnishi, K. et al. | 1992
- 2703
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Comparison between etching in Cl2 and BCl3 for compound semiconductors using a multipolar electron cyclotron resonance sourcePang, S. W. / Ko, K. K. et al. | 1992
- 2708
-
Fabrication of deep submicron patterns with high aspect ratio using magnetron reactive ion etching and sidewall processShiping, Gao / Mengzhen, Chen et al. | 1992
- 2711
-
New in situ electron beam patterning process for GaAs using an electron‐cyclotron‐resonance plasma‐oxidized mask and Cl2 gas etchingTakado, N. / Kohmoto, S. / Sugimoto, Y. / Ozaki, M. / Sugimoto, M. / Asakawa, K. et al. | 1992
- 2716
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Magnetically enhanced triode etching of large area silicon membranes in a molecular bromine plasmaWolfe, J. C. / Sen, S. / Pendharkar, S. V. / Mauger, P. / Shimkunas, A. R. et al. | 1992
- 2720
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HCl, H2, and Cl2 radical‐beam ion‐beam etching of AlxGa1−xAs substrates with varying Al mole fractionSkidmore, J. A. / Lishan, D. G. / Young, D. B. / Hu, E. L. / Coldren, L. A. et al. | 1992
- 2725
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Electron cyclotron resonance plasma etching using downstream magnetic confinementChoquette, Kent D. / Wetzel, Robert C. / Freund, Robert S. / Kopf, Rose F. et al. | 1992
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Low‐energy electron beam enhanced etching of Si(100)‐(2×1) by molecular hydrogenGillis, H. P. / Clemons, J. L. / Chamberlain, J. P. et al. | 1992
- 2734
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Electron beam lithography using MEBES IVAbboud, F. / Gesley, M. / Colby, D. / Comendant, K. / Dean, R. / Eckes, W. / McClure, D. / Pearce‐Percy, H. / Prior, R. / Watson, S. et al. | 1992
- 2743
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Arrayed miniature electron beam columns for high throughput sub‐100 nm lithographyChang, T. H. P. / Kern, D. P. / Muray, L. P. et al. | 1992
- 2749
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Micromachined electrostatic electron sourceCrewe, D. A. / Perng, D. C. / Shoaf, S. E. / Feinerman, A. D. et al. | 1992
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100 kV thermal field emission electron beam lithography tool for high‐resolution x‐ray mask patterningMcCord, M. A. / Viswanathan, R. / Hohn, F. J. / Wilson, A. D. / Naumann, R. / Newman, T. H. et al. | 1992
- 2771
-
Three‐dimensional electron‐beam resist profile simulatorMoniwa, A. / Yamaguchi, H. / Okazaki, S. et al. | 1992
- 2776
-
Choice of system parameters for projection electron‐beam lithography: Accelerating voltage and demagnification factorLiddle, J. A. / Berger, S. D. et al. | 1992
- 2780
-
Mark detection for alignment and registration in a high‐throughput projection electron lithography toolFarrow, R. C. / Liddle, J. A. / Berger, S. D. / Huggins, H. A. / Kraus, J. S. / Camarda, R. M. / Jurgensen, C. W. / Kola, R. R. / Fetter, L. et al. | 1992
- 2784
-
Calculation of a proximity resist heating in variably shaped electron beam lithographyNakajima, Ken / Aizaki, Naoaki et al. | 1992
- 2789
-
Multiconcens: An exposure method for submicron contact‐hole layers, using variable‐shape electron‐beam direct‐write and single‐layer resistHeinlein, F. / Gross, G. / Höfflinger, B. / Irmscher, M. / Reuter, C. / Springer, R. et al. | 1992
- 2794
-
Electron beam lithography system with new correction techniquesTakahashi, Y. / Yamada, A. / Oae, Y. / Yasuda, H. / Kawashima, K. et al. | 1992
- 2799
-
Cell projection column for high speed electron‐beam lithography systemItoh, H. / Todokoro, H. / Sohda, Y. / Nakayama, Y. / Saitou, N. et al. | 1992
- 2804
-
Low‐voltage electron‐optical system for the high‐speed inspection of integrated circuitsMeisburger, W. D. / Brodie, A. D. / Desai, A. A. et al. | 1992
- 2809
-
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- 2814
-
Aberration properties of focused ion‐beam induced by space charge effectHirohata, S. / Kosugi, T. / Sawaragi, H. / Aihara, R. / Gamo, K. et al. | 1992
- 2819
-
Silicon stencil masks for lithography below 0.25 μm by ion‐projection exposureMauger, P. E. / Shimkunas, A. R. / Wolfe, J. C. / Sen, S. / Löschner, H. / Stengl, G. et al. | 1992
- 2824
-
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- 2829
-
Stability and electronic adjustment of ion images projected at 10×reductionBrünger, W. H. / Torkler, M. / Buchmann, L. M. et al. | 1992
- 2834
-
Ultrahigh vacuum in situ fabrication of three‐dimensional semiconductor structures using a combination of particle beamsJones, G. A. C. / Ritchie, D. A. / Linfield, E. H. / Thompson, J. H. / Hamilton, A. R. / Brown, K. et al. | 1992
- 2838
-
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- 2842
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Helium field ion source for application in a 100 keV focused ion beam systemSakata, Takahide / Kumagai, Kiyohito / Naitou, Motohiro / Watanabe, Iwao / Ohhashi, Yuu / Hosoda, Osamu / Kokubo, Yasushi / Tanaka, Kazumitsu et al. | 1992
- 2846
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Oxidation of sub‐50 nm Si columns for light emission studyLiu, Harvey I. / Maluf, Nadim I. / Pease, R. F. W. / Biegelsen, David K. / Johnson, Noble M. / Ponce, Fernando A. et al. | 1992
- 2851
-
Evaluation of the etch depth dependence of three‐dimensional confinement in strain‐induced quantum well dot structuresTan, I‐Hsing / Chang, Ying‐Lan / Shi, Song / Mirin, Richard / Hu, Evelyn / Bowers, John / Merz, James et al. | 1992
- 2855
-
Etch‐rate characterization of irradiated SiO2 and its application in the fabrication of a T‐gate structureHoole, A. C. F. / Broers, A. N. et al. | 1992
- 2860
-
Novel vertical silicon‐membrane structure and its application to Josephson devicesRittenhouse, G. E. / Early, K. / Meyerson, B. S. / Smith, Henry I. / Graybeal, J. M. et al. | 1992
- 2864
-
Selective order–disorder transition in GaInP/AlGaInP: A new approach for the definition of buried quantum wiresHämisch, Y. / Steffen, R. / Oshinowo, J. / Forchel, A. / Röntgen, P. et al. | 1992
- 2868
-
Nanostructure fabrication using lithium fluoride films as an electron beam resistLangheinrich, W. / Spangenberg, B. / Beneking, H. et al. | 1992
- 2873
-
Nanometer metal–oxide semiconductor field effect transistor structures for studying electron transportJin, Gongjiu / Tang, Y. S. / Thoms, S. / Wilkinson, C. D. W. / Gundlach, A. M. et al. | 1992
- 2877
-
Electron‐beam lithography with the scanning tunneling microscopeMarrian, Christie R. K. / Dobisz, Elizabeth A. / Dagata, John A. et al. | 1992
- 2882
-
Study of the lithographic process in deposited silicon dioxidePan, Xiaodan / Broers, A. N. / Jeynes, C. et al. | 1992
- 2886
-
Effects of a pseudomorphic InGaAs layer on focused ion‐beam modulation doped GaAs–AlGaAs quantum well structuresLi, Y. J. / Hashemi, M. / Wassermeier, M. / Mishra, U. K. / Merz, J. L. / Petroff, P. M. et al. | 1992
- 2890
-
Comparative mobility degradation in modulation‐doped GaAs devices after e‐beam and x‐ray irradiationGhanbari, R. A. / Burkhardt, M. / Antoniadis, D. A. / Smith, Henry I. / Melloch, M. R. / Rhee, K. W. / Peckerar, M. C. et al. | 1992
- 2893
-
Improvement of the quality of InGaAs/InP quantum wires due to epitaxial overgrowthBergmann, R. / Menschig, A. / Lehr, G. / Kübler, P. / Hommel, J. / Rudeloff, R. / Henle, B. / Scholz, F. / Schweizer, H. et al. | 1992
- 2896
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Investigation of high‐quantum efficiency InGaAs/InP and InGaAs/GaAs quantum dotsSchmidt, A. / Forchel, A. / Straka, J. / Gyuro, I. / Speier, P. / Zielinski, E. et al. | 1992
- 2900
-
Fabrication of lateral superlattices using multilayer resist techniquesChang, H. / Nummila, K. / Grundbacher, R. / Adesida, I. / Leburton, J.‐P. / Hess, K. et al. | 1992
- 2904
-
Fabrication and physics of lateral superlattices with 40 nm pitch on high‐mobility GaAs GaAlAs heterostructuresSmith, C. G. / Chen, W. / Pepper, M. / Ahmed, H. / Hasko, D. / Ritchie, D. A. / Frost, J. E. F. / Jones, G. A. C. et al. | 1992
- 2909
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Large‐area, free‐standing gratings for atom interferometry produced using holographic lithographyCarter, J. M. / Olster, D. B. / Schattenburg, M. L. / Yen, A. / Smith, Henry I. et al. | 1992
- 2912
-
Fabrication of compact 100 nm‐scale silicon metal–oxide–semiconductor field effect transistorsWind, S. J. / Reeves, C. M. / Bucchignano, J. J. / Lii, Y. T. / Newman, T. H. / Klaus, D. P. / Keller, J. / Volant, R. P. / Tebin, B. / Hohn, F. J. et al. | 1992
- 2917
-
Design and characterization of compact 100 nm‐scale silicon metal–oxide–semiconductor field effect transistorsReeves, C. M. / Wind, S. J. / Hohn, F. J. / Lii, Y. T. / Bucchignano, J. J. / Newman, T. H. / Klaus, D. P. / Volant, R. P. / Keller, J. / Tebin, B. et al. | 1992
- 2922
-
Gate technology for 89 GHz vertical doping engineered Si metal–oxide semiconductor field effect transistorJeon, D. Y. / Tennant, D. M. / Kim, Y. O. / Yan, R. H. / Lee, K. F. / Early, K. et al. | 1992
- 2927
-
T‐gate, Γ‐gate, and air‐bridge fabrication for monolithic microwave integrated circuits by mixed ion‐beam, high‐voltage electron‐beam, and optical lithographyWoodham, R. G. / Cleaver, J. R. A. / Ahmed, H. / Ladbrooke, P. H. et al. | 1992
- 2932
-
Nanoscale metal–semiconductor–metal photodetectors with subpicosecond response time fabricated using electron beam lithographyLiu, M. Y. / Chou, S. Y. / Hsiang, T. Y. / Alexandrou, S. / Sobolewski, R. et al. | 1992
- 2936
-
Submicron modulation‐doped field‐effect transistor/metal–semiconductor–metal‐based optoelectronic integrated circuit receiver fabricated by direct‐write electron‐beam lithographyKetterson, A. / Tong, M. / Seo, J.‐W. / Nummila, K. / Cheng, K. Y. / Morikuni, J. / Kang, S. / Adesida, I. et al. | 1992
- 2941
-
Fabrication of lateral resonant tunneling devicesRandall, J. N. / Seabaugh, A. C. / Luscombe, J. H. et al. | 1992
- 2945
-
Direct‐current and radio‐frequency characterization of submicron striped‐channel field effect transistor structures using focused ion beam and electron‐beam lithographyHashemi, M. M. / Li, Y. / Kiziloglu, K. / Wassermeier, M. / Petroff, P. M. / Mishra, U. K. et al. | 1992
- 2949
-
Dry etching bilayer and trilevel resist systems for submicron gate length GaAs based high electron mobility transistors for power and digital applicationsRen, F. / Pearton, S. J. / Tennant, D. M. / Resnick, D. J. / Abernathy, C. R. / Kopf, R. F. / Wu, C. S. / Hu, M. / Pao, C. K. / Paine, B. M. et al. | 1992
- 2954
-
Fabrication of n‐channel metal–oxide–semiconductor field‐effect transistors with 0.2 μm gate lengths in 500 Å thin film silicon on sapphirede la Houssaye, P. R. / Offord, B. W. / Minter, J. P. / Imthurn, G. P. / Garcia, G. A. et al. | 1992
- 2958
-
Optical and electron beam lithography for electroless copper multilevel metallizationShacham‐Diamand, Y. / Angyal, M. / Dedhia, A. / Nasir, Q. et al. | 1992
- 2962
-
Engineering sub‐50 nm quantum effect devices and single‐electron transistors using electron‐beam lithographyWang, Yun / Chou, Stephen Y. et al. | 1992
- 2966
-
Conductance quantization in a GaAs electron waveguide device fabricated by x‐ray lithographyChu, W. / Eugster, C. C. / Moel, A. / Moon, E. E. / del Alamo, J. A. / Smith, Henry I. / Schattenburg, M. L. / Rhee, K. W. / Peckerar, M. C. / Melloch, M. R. et al. | 1992
- 2970
-
Fabrication of nonconventional distributed feedback lasers with variable grating periods and phase shifts by electron beam lithographyKaden, C. / Griesinger, U. / Schweizer, H. / Pilkuhn, M. H. / Stath, N. et al. | 1992
- 2974
-
Curved grating fabrication techniques for surface‐emitting distributed feedback lasersKing, Oliver / Erdogan, Turan / Wicks, Gary W. / Hall, Dennis G. / Anderson, Erik H. / Costello, Dennis / Rooks, Michael J. et al. | 1992
- 2979
-
Fabrication of nonlinearly shaped optical waveguide tapers on InP with precise design‐parameter controlBrückner, H. J. / Olzhausen, H.‐J. / Zengerle, R. et al. | 1992
- 2984
-
Fabrication of encapsulated silicon‐vacuum field‐emission transistors and diodesSune, C. T. / Jones, G. W. / Vellenga, D. et al. | 1992
- 2989
-
Photolithography at 193 nmRothschild, M. / Goodman, R. B. / Hartney, M. A. / Horn, M. W. / Kunz, R. R. / Sedlacek, J. H. C. / Shaver, D. C. et al. | 1992
- 2997
-
Lithographic tolerances based on vector diffraction theoryFlagello, D. G. / Rosenbluth, A. E. et al. | 1992
- 3004
-
Optimization of partially coherent optical system for optical lithographyInoue, Soichi / Fujisawa, Tadahito / Tamaushi, Shuichi / Ogawa, Yoji / Nakase, Makoto et al. | 1992
- 3008
-
Contrast transfer function measurements of deep ultraviolet steppersGrassmann, Andreas / Moritz, Holger et al. | 1992
- 3012
-
Thin film interference effects in phase shifting masks causing phase and transmittance errorsRonse, Kurt / Jonckheere, R. / Baik, Ki‐Ho / Pforr, R. / Van den hove, L. et al. | 1992
- 3019
-
Simulation of projection optic lithography images with finite impulse response filtersWhite, L. K. / Matey, J. R. et al. | 1992
- 3023
-
High performance optical lithography using a separated light sourceAsai, Satoru / Hanyu, Isamu / Hikosaka, Kohki et al. | 1992
- 3027
-
Investigation of single sideband optical lithography using oblique incidence illuminationTamechika, Emi / Matsuo, Seitaro / Komatsu, Kazuhiko / Takeuchi, Yoshinobu / Mimura, Yoshiaki / Harada, Katsuhiro et al. | 1992
- 3032
-
1/8 μm optical lithographyOwen, G. / Pease, R. F. W. / Markle, D. A. / Grenville, A. / Hsieh, R. L. / von Bünau, R. / Maluf, N. I. et al. | 1992
- 3037
-
Extending scalar aerial image calculations to higher numerical aperturesCole, Daniel C. / Barouch, Eytan / Hollerbach, Uwe / Orszag, Steven A. et al. | 1992
- 3042
-
All‐reflective phase‐shifting masks for Markle–Dyson opticsHsieh, Robert L. / Grenville, Andrew / Owen, Geraint / Pease, R. Fabian et al. | 1992
- 3047
-
Depth of focus enhancement in optical lithographyvon Bünau, R. / Owen, G. / Pease, R. F. W. et al. | 1992
- 3055
-
Exposure characteristics of alternate aperture phase‐shifting masks fabricated using a subtractive processKostelak, R. L. / Pierrat, C. / Garofalo, J. G. / Vaidya, S. et al. | 1992
- 3062
-
Proximity effect reduction in x‐ray mask making using thin silicon dioxide layersRhee, Kee W. / Ma, David I / Peckerar, Martin C. / Ghanbari, R. A. / Smith, Henry I. et al. | 1992
- 3067
-
Thin silicon nitride films for reduction of linewidth and proximity effects in e‐beam lithographyDobisz, E. A. / Marrian, C. R. K. / Shirey, L. M. / Ancona, M. et al. | 1992
- 3072
-
Fast proximity effect correction method using a pattern area density mapMurai, Fumio / Yoda, Haruo / Okazaki, Shinji / Saitou, Norio / Sakitani, Yoshio et al. | 1992
- 3077
-
Fast proximity effect correction: An extension of PYRAMID for circuit patterns of arbitrary sizeJacob, Joseph C. / Lee, Soo‐Young / McMillan, Jo A. / MacDonald, Noel C. et al. | 1992
- 3083
-
Low voltage, high resolution studies of electron beam resist exposure and proximity effectMcCord, M. A. / Newman, T. H. et al. | 1992
- 3088
-
Low‐voltage electron beam lithographyPeterson, P. A. / Radzimski, Z. J. / Schwalm, S. A. / Russell, P. E. et al. | 1992
- 3094
-
Low voltage alternative for electron beam lithographyLee, Y.‐H. / Browning, R. / Maluf, N. / Owen, G. / Pease, R. F. W. et al. | 1992
- 3099
-
Characterization of a positive resist and the application of proximity effect correction in electron‐beam direct writeTan, Z. C. H. / Standiford, K. / Lem, H. Y. / Nurmi, C. et al. | 1992
- 3104
-
30 nm resolution zero proximity lithography on high‐Z substratesAtkinson, G. M. / Stratton, F. P. / Kubena, R. L. / Wolfe, J. C. et al. | 1992
- 3109
-
Optical detection of multibit logic signals at internal nodes in a flip‐chip mounted silicon static random‐access memory integrated circuitHeinrich, H. K. / Pakdaman, N. / Prince, J. L. / Jordy, G. / Belaidi, M. / Franch, R. / Edelstein, D. C. et al. | 1992
- 3112
-
Ballistic electron emission microscopy investigation of SiGe nanostructures fabricated using reactive‐ion etchingCouillard, J. G. / Davies, A. / Craighead, H. G. et al. | 1992
- 3116
-
Scanning probe microscopy of deposits employed to image the current density distribution of electron beamsWeber, M. / Koops, H. W. P. / Görtz, W. et al. | 1992
- 3120
-
Focused ion beam observation of grain structure and precipitates in aluminum thin filmsBarr, D. L. / Harriott, L. R. / Brown, W. L. et al. | 1992
- 3126
-
Laser‐produced plasmas for soft x‐ray projection lithographySilfvast, W. T. / Richardson, M. C. / Bender, H. / Hanzo, A. / Yanovsky, V. / Jin, F. / Thorpe, J. et al. | 1992
- 3134
-
Defect repair for soft x‐ray projection lithography masksTennant, D. M. / Fetter, L. A. / Harriott, L. R. / MacDowell, A. A. / Mulgrew, P. P. / Waskiewicz, W. K. / Windt, D. L. / Wood, O. R. et al. | 1992
- 3141
-
Metal‐less x‐ray phase‐shift masks for nanolithographyWhite, V. / Cerrina, F. et al. | 1992
- 3145
-
Application of x‐ray lithography with a single‐layer resist process to subquartermicron large scale integrated circuit fabricationDeguchi, Kimiyoshi / Miyoshi, Kazunori / Ban, Hiroshi / Kyuragi, Hakaru / Konaka, Shinsuke / Matsuda, Tadahito et al. | 1992
- 3150
-
Experimental and theoretical study of image bias in x‐ray lithographyGuo, Jerry Z. Y. / Leonard, Quinn / Cerrina, Franco / Di Fabrizio, E. / Luciani, L. / Gentili, M. / Gerold, David et al. | 1992
- 3155
-
Stress reduction of gold absorber patterns on x‐ray masksJohnson, W. A. / Acosta, R. E. / Berry, B. S. / Pritchet, W. C. / Resnick, D. J. / Dauksher, W. J. et al. | 1992
- 3159
-
Chemical‐vapor deposition of SiC thin films for x‐ray mask applicationsFuentes, Ricardo I. et al. | 1992
- 3164
-
Modeling and experimental verification of illumination and diffraction effects on image quality in x‐ray lithographyHector, Scott D. / Schattenburg, M. L. / Anderson, E. H. / Chu, W. / Wong, Vincent V. / Smith, Henry I. et al. | 1992
- 3169
-
Correlation of in‐plane and out‐of‐plane distortion in x‐ray lithography masksKu, Y. C. / Lim, Michael H. / Carter, J. M. / Mondol, M. K. / Moel, A. / Smith, Henry I. et al. | 1992
- 3173
-
Resolution limits in x‐ray lithographyFeldman, M. / Sun, J. et al. | 1992
- 3177
-
Projection x‐ray lithography using computer‐generated holograms: A study of compatibility with proximity lithographyJacobsen, Chris / Howells, Malcolm et al. | 1992
- 3182
-
Repair of opaque defects on reflection masks for soft x‐ray projection lithographyHawryluk, Andrew M. / Stewart, Diane et al. | 1992
- 3186
-
Masks for x‐ray lithography with a point source stepperCeller, G. K. / Biddick, C. / Frackoviak, J. / Jurgensen, C. W. / Kola, R. R. / Novembre, A. E. / Trimble, L. E. / Tennant, D. M. et al. | 1992
- 3191
-
X‐ray mask development based on SiC membrane and W absorberChaker, M. / Boily, S. / Diawara, Y. / El Khakani, M. A. / Gat, E. / Jean, A. / Lafontaine, H. / Pépin, H. / Voyer, J. / Kieffer, J. C. et al. | 1992
- 3196
-
Fabrication of parallel quasi‐one‐dimensional wires using a novel conformable x‐ray mask technologyGhanbari, R. A. / Chu, W. / Moon, E. E. / Burkhardt, M. / Yee, K. / Antoniadis, D. A. / Smith, Henry I. / Schattenburg, M. L. / Rhee, K. W. / Bass, R. et al. | 1992
- 3200
-
Membrane fragility: Fact or illusion?Trimble, L. E. / Celler, G. K. / Frackoviak, J. / Weber, G. R. et al. | 1992
- 3204
-
Impact of different x‐ray mask substrate materials on optical alignmentFuentes, R. I. / Progler, C. / Bukofsky, S. / Kimmel, K. et al. | 1992
- 3208
-
Deformation of x‐ray lithography masks during tool chuckingChen, Alek C. / Maldonado, Juan R. et al. | 1992
- 3212
-
Diffraction effects and image blurring in x‐ray proximity printingDubner, A. D. / Wagner, A. / Levin, J. P. / Mauer, J. et al. | 1992
- 3217
-
Diamond membrane based x‐ray masksLöchel, B. / Huber, H.‐L. / Klages, C.‐P. / Schäfer, L. / Bluhm, A. et al. | 1992
- 3221
-
Novel approach to zero‐magnification x‐ray mask replicationWells, G. M. / Krasnoperova, A. / Haytcher, E. A. / Engelstad, R. / Cerrina, F. / Fair, R. / Maldonado, J. et al. | 1992
- 3224
-
Installation and early operating experience with the Helios compact synchrotron x‐ray sourceArchie, C. N. / Granlund, J. I. / Hill, R. W. / Kukkonen, K. W. / Leavey, J. A. / Lesoine, L. G. / Oberschmidt, J. M. / Palumbo, A. E. / Wasik, C. / Barton, M. Q. et al. | 1992
- 3229
-
CXrL aligner: An experimental x‐ray lithography system for quarter‐micron feature devicesChen, G. / Wallace, J. / Nachman, R. / Wells, G. / Bodoh, D. / Anderson, P. / Reilly, M. / Cerrina, F. et al. | 1992
- 3235
-
Synchrotron radiation stepper with new alignment systemSato, F. / Ito, K. / Miyatake, T. / Yamazaki, K. / Hamada, S. / Tomita, Y. et al. | 1992
- 3239
-
Laser plasma sources for proximity printing or projection x‐ray lithographyChaker, M. / La Fontaine, B. / Côté, C. Y. / Kieffer, J. C. / Pépin, H. / Talon, M. H. / Enright, G. D. / Villeneuve, D. M. et al. | 1992
- 3243
-
Application of an x‐ray stepper for subquarter micrometer fabricationChen, Yong / Haghiri‐Gosnet, A. M. / Decanini, D. / Ravet, M. F. / Rousseaux, F. / Launois, H. et al. | 1992
- 3248
-
Evaluation of heterodyne alignment technique for x‐ray steppersKoga, K. / Higashikawa, I. / Itoh, T. / Araki, K. / Fujita, K. / Yasui, J. / Aoki, S. et al. | 1992
- 3252
-
Measurement of x‐ray absorption spectra of photoresists using a silicon lithium detectorWells, G. M. / Taylor, J. W. / Cerrina, F. / Pearson, D. / MacKay, J. et al. | 1992