Radiation stability and damage mechanisms in x‐ray membranes (Englisch)
- Neue Suche nach: Vladimirsky, Y.
- Neue Suche nach: Vladimirsky, Y.
In:
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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6
, 1
;
183-185
;
1988
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Radiation stability and damage mechanisms in x‐ray membranes
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Weitere Titelangaben:Radiation stability and damage mechanisms
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Beteiligte:Vladimirsky, Y. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.01.1988
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Format / Umfang:3 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 6, Ausgabe 1
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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A review of excimer laser projection lithographyRothschild, M. / Ehrlich, D. J. et al. | 1988
- 18
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Local electronic structure and surface geometry of Ag on Si(111)Demuth, J. E. / Von Lenen, E. J. / Tromp, R. M. / Hamers, R. J. et al. | 1988
- 26
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Morphology of thermally etched GaAs substrate and molecular‐beam epitaxial layers grown on its substrateSaito, Junji / Nanbu, Kazuo / Kondo, Kazuo et al. | 1988
- 31
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Observation of the superstructure at the Al–GaAs(001) interface by synchrotron x‐ray diffractionMizuki, J. / Akimoto, K. / Hirosawa, I. / Hirose, K. / Mizutani, T. / Matsui, J. et al. | 1988
- 34
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X‐ray double‐crystal diffraction studies of GaInAsP/InP heterostructuresWang, X. R. / Chi, X. Y. / Zheng, H. / Miao, Z. L. / Wang, J. / Zhang, Z. S. / Jin, Y. S. et al. | 1988
- 37
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Rapid direct writing of high‐aspect ratio trenches in silicon: Process physicsTreyz, G. V. / Beach, R. / Osgood, R. M. et al. | 1988
- 45
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Thermal nitridation of silicon dioxide filmsMenéndez, I. / Fernández, M. / Sacedón, J. L. et al. | 1988
- 48
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Photocathodic deposition of gold alloys for Ohmic contacts to III–V materialsKelly, J. J. / Rikken, J. M. G. / Jacobs, J. W. M. / Valster, A. et al. | 1988
- 53
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In situ investigation of TiN formation on top of TiSi2Willemsen, M. F. C. / Kuiper, A. E. T. / Reader, A. H. / Hokke, R. / Barbour, J. C. et al. | 1988
- 62
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Preoxidation treatments for very thin oxides grown after silicon exposure to reactive ion etching plasmaBellezza, O. / Ghezzi, P. / Gualandris, F. / Riva, C. et al. | 1988
- 66
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Plasma etching of organic materials. II. Polyimide etching and passivation downstream of an O2–CF4–Ar microwave plasmaVukanovic, V. / Takacs, G. A. / Matuszak, E. A. / Egitto, F. D. / Emmi, F. / Horwath, R. S. et al. | 1988
- 72
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Temperature and flow effects in aluminum etching using bromine‐containing plasmasKeaton, A. Landauer / Hess, D. W. et al. | 1988
- 77
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Selective reactive ion etching of GaAs on AlGaAs using CCl2F2 and HeSeabaugh, Alan et al. | 1988
- 82
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Polymethacrylonitrile as a resist in x‐ray lithographySchlegel, L. / Schnabel, W. et al. | 1988
- 87
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New portable conformable masking excimer laser lithography using water‐soluble contrast enhanced materialEndo, M. / Sasago, M / Hirai, Y. / Ogawa, K. / Ishihara, T. et al. | 1988
- 91
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Characteristics of diazonaphthoquinone‐4‐ and ‐5‐sulfonate derivatives as sensitizers for electron‐beam positive resistsTanigaki, Katsumi et al. | 1988
- 95
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Incorporation of rapid isothermal processor in a vacuum systemRadpour, F. / Anandakugan, S. / Chou, P. / Singh, R. et al. | 1988
- 107
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X‐ray lithographyHeuberger, A. et al. | 1988
- 122
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Fabrication of quantum devices in metals and semiconductorsSchmid, H. / Rishton, S. A. / Kern, D. P. / Washburn, S. / Webb, R. A. / Kleinsasser, A. / Chang, T. H. P. / Fowler, A. et al. | 1988
- 127
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Fabrication of quantum wires in GaAs/AlGaAs heterolayersThoms, S. / McIntyre, I. / Beaumont, S. P. / Al‐Mudares, M. / Cheung, R. / Wilkinson, C. D. W. et al. | 1988
- 131
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Observation of Aharonov–Bohm effect in quasi‐one‐dimensional GaAs/AlGaAs ringsMankiewich, P. M. / Behringer, R. E. / Howard, R. E. / Chang, A. M. / Chang, T. Y. / Chelluri, B. / Cunningham, J. / Timp, G. et al. | 1988
- 134
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Fabrication and characterization of ultrashort gate length GaAs field‐effect transistorsTiberio, R. C. / Wolf, E. D. / Anderson, S. F. / Schaff, W. J. / Tasker, P. J. / Eastman, L. F. et al. | 1988
- 137
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Electron velocity overshoot in sub‐100‐nm channel length metal–oxide–semiconductor field‐effect transistors at 77 and 300 KShahidi, G. G. / Antoniadis, D. A. / Smith, Henry I. et al. | 1988
- 140
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Lithography for ultrashort channel silicon field effect transistor circuitsRishton, S. A. / Schmid, H. / Kern, D. P. / Luhn, H. E. / Chang, T. H. P. / Sai‐Halasz, G. A. / Wordeman, M. R. / Ganin, E. / Polcari, M. et al. | 1988
- 146
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Electron‐beam inspection technology for x‐ray masksTakeuchi, S. / Moriizumi, K. / Saitoh, K. / Yoshioka, N. / Kato, T. et al. | 1988
- 150
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Use of a pi‐phase shifting x‐ray mask to increase the intensity slope at feature edgesKu, Y.‐C. / Anderson, Erik H. / Schattenburg, Mark L. / Smith, Henry I. et al. | 1988
- 154
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An improved boron nitride technology for synchrotron x‐ray masksLevy, R. A. / Resnick, D. J. / Frye, R. C. / Yanof, A. W. / Wells, G. M. / Cerrina, F. et al. | 1988
- 162
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Radiation damage in boron nitride x‐ray lithography masksKing, Paul L. / Pan, Lawrence / Pianetta, Piero / Shimkunas, Alex / Mauger, Philip / Seligson, Daniel et al. | 1988
- 167
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Reduction in x‐ray lithography shot noise exposure limit by dissolution phenomenaNeureuther, Andrew R. / Willson, C. Grant et al. | 1988
- 174
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Reduction in x‐ray mask distortion using amorphous WNx absorber stress compensated with ion bombardmentKanayama, Toshihiko / Sugawara, Minoru / Itoh, Junji et al. | 1988
- 178
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Progress in deep‐etch synchrotron radiation lithographyEhrfeld, W. / Bley, P. / Götz, F. / Mohr, J. / Münchmeyer, D. / Schelb, W. / Baving, H. J. / Beets, D. et al. | 1988
- 183
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Radiation stability and damage mechanisms in x‐ray membranesVladimirsky, Y. et al. | 1988
- 186
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X‐ray lithography using broadband sourcesHollman, Richard et al. | 1988
- 191
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Development of highly reliable synchrotron radiation lithography beamlineOkada, K. / Fujii, K. / Kawase, Y. / Nagano, M. et al. | 1988
- 195
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Plasma focus x‐ray source for lithographyKato, Yasuo / Ochiai, Isao / Watanabe, Yoshio / Murayama, Seiichi et al. | 1988
- 199
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- 204
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High‐precision reticle making by electron‐beam lithographyHamaguchi, Shin‐ichi / Kai, Jun‐ichi / Yasuda, Hiroshi et al. | 1988
- 209
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The electron‐beam column for a high‐dose and high‐voltage electron‐beam exposure system EX‐7Tamamushi, S. / Wada, H. / Ogawa, Y. / Sasaki, I. / Nakasuji, M. / Kusakabe, H. / Yoshikawa, R. / Takigawa, T. et al. | 1988
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A multiple exposure strategy for reducing butting errors in a raster‐scanned electron‐beam exposure systemDameron, David H. / Fu, Chong‐Cheng / Pease, R. F. W. et al. | 1988
- 216
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Achromatic holographic lithography in the deep ultravioletAnderson, Erik H. / Komatsu, Kazuhiko / Smith, Henry I. et al. | 1988
- 219
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Azide–poly(methylmethacrylate) photoresist for ultraviolet lithographyHan, C. C. / Corelli, J. C. et al. | 1988
- 224
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Printability of defects in optical lithography: Polarity and critical location effectsMastromarco, Vincent / Neureuther, A. R. / Toh, Kenny et al. | 1988
- 230
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Au–Zn–Si liquid‐metal ion source emitting multiple p‐ and n‐type ion species for compositional disordering of GaAs–AlGaAs multiquantum wellsArimoto, Hiroshi / Miyauchi, Eizo / Furuya, Akira / Ishida, Koji / Takamori, Takeshi / Nakashima, Hisao / Hashimoto, Hisao et al. | 1988
- 234
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Focused‐ion‐beam milling, scanning‐electron microscopy, and focused‐droplet deposition in a single microcircuit surgery toolSudraud, P. / Ben Assayag, G. / Bon, M. et al. | 1988
- 239
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Summary Abstract: An ion beam lithography system for nanolithography with a focused H+2 ion probeLewis, George / Mioduszewski, John / Weiner, David / Siegel, Benjamin et al. | 1988
- 241
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Fine pattern lithography using a helium field ion sourceHoriuchi, K. / Itakura, T. / Ishikawa, H. et al. | 1988
- 245
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Performance of a 20–200 kV focused‐ion‐beam system with a new optical design conceptAihara, R. / Sawaragi, H. / Morimoto, H. / Hosono, K. / Sasaki, Y. / Kato, T. / Hassel Shearer, M. et al. | 1988
- 249
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Pattern transfer by dry etching through stencil masksPang, S. W. / Geis, M. W. / Goodhue, W. D. / Efremow, N. N. / Ehrlich, D. J. / Goodman, R. B. / Randall, J. N. et al. | 1988
- 253
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- 257
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Magnetically enhanced reactive ion etching of silicon in bromine plasmasEl‐Masry, Ahmed M. / Fong, F‐O. / Wolfe, J. C. / Randall, John N. et al. | 1988
- 263
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Broad ion beam modeling for extraction optics optimization and etching process simulationKorzec, D. / Schmitz, K. / Engemann, J. et al. | 1988
- 268
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Plasma etching with a microwave cavity plasma disk sourceHopwood, J. / Dahimene, M. / Reinhard, D. K. / Asmussen, J. et al. | 1988
- 272
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Anisotropy of low‐energy ion etching via electron cyclotron resonance plasmaTobinaga, Y. / Hayashi, N. / Araki, H. / Nakayama, S. / Kudoh, H. et al. | 1988
- 277
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Electrical damage induced by ion beam etching of GaAsScherer, A. / Craighead, H. G. / Roukes, M. L. / Harbison, J. P. et al. | 1988
- 280
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Effects of dry etching on the electrical properties of siliconHeddleson, J. M. / Horn, M. W. / Fonash, S. J. / Nguyen, D. C. et al. | 1988
- 284
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Characterization of a reactive broad beam radio‐frequency ion sourceLossy, R. / Engemann, J. et al. | 1988
- 288
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Electron energy distributions in oxygen microwave plasmasHeidenreich, J. E. / Paraszczak, J. R. / Moisan, M. / Sauve, G. et al. | 1988
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Lift‐off metallization using poly(methyl methacrylate) exposed with a scanning tunneling microscopeMcCord, M. A. / Pease, R. F. W. et al. | 1988
- 297
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Nanometer‐scale structure for the study of flux‐line lattice shearing in superconducting double layers of a‐Nb3Ge and NbNv. d. Drift, E. / Radelaar, S. / Pruymboom, A. / Kes, P. H. et al. | 1988
- 302
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- 306
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Scanning tunneling microscope liquid‐metal ion source for microfabricationBell, A. E. / Rao, K. / Swanson, L. W. et al. | 1988
- 311
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- 316
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Microporous GaAs/GaAlAs superlatticesDeckman, H. W. / Moustakas, T. D. et al. | 1988
- 319
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Nanolithography with an acid catalyzed resistUmbach, C. P. / Broers, A. N. / Willson, C. G. / Koch, R. / Laibowitz, R. B. et al. | 1988
- 323
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Imaging zone plates for x‐ray microscopy fabricated by electron‐beam lithographyUnger, P. / Bögli, V. / Beneking, H. / Niemann, B. / Guttmann, P. et al. | 1988
- 328
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Sub‐100‐nm gate length GaAs metal–semiconductor field‐effect transistors and modulation‐doped field‐effect transistors fabricated by a combination of molecular‐beam epitaxy and electron‐beam lithographyAllee, D. R. / de la Houssaye, P. R. / Schlom, D. G. / Harris, J. S. / Pease, R. F. W. et al. | 1988
- 333
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Macromolecular self‐organized assembliesDeckman, H. W. / Dunsmuir, J. H. / Garoff, S. / McHenry, J. A. / Peiffer, D. G. et al. | 1988
- 337
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Pattern definition and formation on curved surfacesDeininger, William D. / Garner, Charles E. et al. | 1988
- 341
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Formation of submicron silicon‐on‐insulator structures by lateral oxidation of substrate‐silicon islandsArney, Susanne C. / MacDonald, Noel C. et al. | 1988
- 346
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A model for comparing process latitude in ultraviolet, deep‐ultraviolet, and x‐ray lithographySmith, Henry I. et al. | 1988
- 350
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Comparison of data transfer rates of focused electron and ion beam nanometer lithographySiegel, Benjamin M. et al. | 1988
- 353
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Dot lithography for zero‐dimensional quantum wells using focused ion beamsKubena, R. L. / Joyce, R. J. / Ward, J. W. / Garvin, H. L. / Stratton, F. P. / Brault, R. G. et al. | 1988
- 357
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- 361
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Characterization of electron‐beam exposed optical resistTam, Nelson N. / Coyne, Rick D. / Neureuther, Andrew R. / Slayman, Charlie W. et al. | 1988
- 366
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A new contrast enhancement technique for electron‐beam lithographySuga, Osamu / Aoki, Emiko / Okazaki, Shinji / Murai, Fumio / Shiraishi, Hiroshi / Nonogaki, Saburo et al. | 1988
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Plasma polymerized styrene: A negative resistFong, F.‐O. / Kuo, Hong C. / Wolfe, J. C. / Randall, John N. et al. | 1988
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Sensitization of optical photoresists for electron‐beam exposure of submicron patternsGoncher, G. M. / Lyngdal, J. W. / Lamer, G. L. et al. | 1988
- 389
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Very large scale integrated pattern registration improvement by photoablation of resist‐covered alignment targetsPolasko, Kenneth J. / Elliott, David J. / Piwczyk, Bernhard P. et al. | 1988
- 394
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Moiré alignment technique for the mix and match lithographic systemNomura, Tsutomu / Kimura, Seiichiro / Uchida, Yoshiyuki / Hattori, Shuzo et al. | 1988
- 399
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Clearing resist from alignment mark areas using an excimer laserSeeger, D. E. / Rosenfield, M. G. et al. | 1988
- 403
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Alignment errors from resist coating topographyBobroff, Norman / Rosenbluth, Alan et al. | 1988
- 409
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An alignment system for synchrotron radiation x‐ray lithographyItoh, Junji / Kanayama, Toshihiko / Atoda, Nobufumi / Hoh, Koichiro et al. | 1988
- 413
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A practical interferometric technique for mask/wafer alignment during proximity printingBartelt, John L. / Olney, Ross D. et al. | 1988
- 417
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An improved magnetic‐collimating secondary electron energy filter for very large scale integrated diagnosticsRichardson, Neil / Muray, Andrew et al. | 1988
- 422
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Simple calculation formulas for field and aberrations of resistance box yokesJiang, Xinrong et al. | 1988
- 426
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Electron scattering distribution in InP at 50 kVTennant, D. M. / Doran, G. E. / Howard, R. E. / Denker, J. S. et al. | 1988
- 432
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Exact solution of the proximity effect equation by a splitting methodGerber, P. Dean et al. | 1988
- 436
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Applying transform based proximity corrections to electron‐beam lithography with 0.2‐μm featuresHaslam, Michael E. / McDonald, John F. et al. | 1988
- 443
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Proximity correction on the AEBLE‐150Otto, O. W. / Griffith, A. K. et al. | 1988
- 448
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GHOST proximity correction technique: Its parameters, limitations, and process latitudeKostelak, R. L. / Kung, E. H. / Thomson, M. G. R. / Vaidya, S. et al. | 1988
- 456
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Ionized cluster beam depositionKnauer, W. / Poeschel, R. L. et al. | 1988
- 461
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Summary Abstract: Photoablation of photoresist polymer thin films using synchrotron radiationMancini, Derrick C. / Taylor, James W. / Beall, Charles E. et al. | 1988
- 463
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Dopant‐induced ablation of polymers by a 308 nm excimer laserHiraoka, H. / Chuang, T. J. / Masuhara, H. et al. | 1988
- 466
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- 470
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Deposition and characterization of silicon dioxide thin films deposited by mercury‐arc‐source driven photon‐activated chemical‐vapor depositionScoles, Kevin J. / Kim, Anderson H. / Jiang, Mian‐Heng / Lee, Brian C. et al. | 1988
- 473
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SiO2 films deposited on Si by dual ion beamsMinowa, Y. / Ito, H. et al. | 1988
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- 496
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Summary Abstract: Qualitative description of cluster and droplet emission from liquid‐metal ion sourcesBahasadri, A. / Pourrezaei, K. / Francois, M. / Nayak, D. et al. | 1988
- 498
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Characteristics of a helium field ion gunKonishi, Morikazu / Takizawa, Masaaki / Tsumori, Toshiro et al. | 1988