Laser‐induced regrowth of 〈100〉 Ge implanted with B and P ions (Englisch)
- Neue Suche nach: Mea, G. Della
- Neue Suche nach: Foti, G.
- Neue Suche nach: Majni, G.
- Neue Suche nach: Mea, G. Della
- Neue Suche nach: Foti, G.
- Neue Suche nach: Majni, G.
- Neue Suche nach: Ferris, S. D.
- Neue Suche nach: Leamy, H. J.
- Neue Suche nach: Poate, J. M.
In:
AIP Conference Proceedings
;
50
, 1
;
317-320
;
1979
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Laser‐induced regrowth of 〈100〉 Ge implanted with B and P ions
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Beteiligte:Mea, G. Della ( Autor:in ) / Foti, G. ( Autor:in ) / Majni, G. ( Autor:in ) / Ferris, S. D. ( Herausgeber:in ) / Leamy, H. J. ( Herausgeber:in ) / Poate, J. M. ( Herausgeber:in )
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Erschienen in:AIP Conference Proceedings ; 50, 1 ; 317-320
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Verlag:
- Neue Suche nach: American Institute of Physics
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Erscheinungsdatum:15.04.1979
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Format / Umfang:4 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 50, Ausgabe 1
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- 1
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Fundamentals of laser‐solid interactionsBloembergen, N. et al. | 1979
- 11
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Dynamics of laser annealingAuston, D. H. / Golovchenko, J. A. / Simons, A. L. / Slusher, R. E. / Smith, P. R. / Surko, C. M. / Venkatesan, T. N. C. et al. | 1979
- 27
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Laser generated stress waves: Their characteristics and their effects to materialsFairand, B. P. / Clauer, A. H. et al. | 1979
- 43
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Annealing of silicon with 1.06 μm laser pulsesvon Allemen, M. / Lüthy, W. / Siregar, M. T. / Affolter, K. / Nicolet, M. A. et al. | 1979
- 49
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Infrared laser molecular solid interaction at low temperatures under ultrahigh vacuumHeidberg, J. / Stein, H. / Nestmann, A. / Hoefs, E. / Hussla, I. et al. | 1979
- 55
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Transient heating of metals by Microsecond‐duration CO2 laser pulses with air plasma ignitionMcKay, J. A. / Schriempf, J. T. et al. | 1979
- 61
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Dynamic behaviors of pulsed‐laser annealing in ion‐implanted silicon studied by measuring the optical reflectanceMurakami, Kouichi / Gamo, Kenji / Namba, Susumu / Kawabe, Mitsuo / Aoyagi, Yoshinobu / Akasaka, Youichi et al. | 1979
- 67
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Time‐resolved specular reflectivity of metals subjected to 10.6‐μm laser pulsesWalters, C. T. / Clauer, A. H. et al. | 1979
- 73
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Kinetics of motion of crystal‐melt interfacesSpaepen, F. / Turnbull, D. et al. | 1979
- 84
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Comparison of laser and thermal annealing of implanted‐amorphous siliconLau, S. S. / Mayer, J. W. / Tseng, W. F. et al. | 1979
- 97
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A calculation of the thermodynamic first order amorphous semiconductor to metallic liquid transition temperatureBagley, B. G. / Chen, H. S. et al. | 1979
- 102
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A comment on the solubility of impurities in laser annealed siliconJackson, K. A. / Leamy, H. J. et al. | 1979
- 105
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Redistribution of very thin Sb‐layers in Si after laser annealing: A theoretical model and preliminary experimental resultsLiau, Z. L. / Tsaur, B. Y. / Lau, S. S. / Golecki, I. / Mayer, J. W. et al. | 1979
- 111
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Laser induced structure changes in implanted semiconductors related to pulse shapeVitali, G. / Bertolotti, M. / Stagni, L. et al. | 1979
- 117
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Fast laser kinetic studies of the semiconductor‐metal phase transition in VO2 thin filmsWalser, R. M. / Becker, M. F. et al. | 1979
- 123
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Dopant profile changes induced by laser irradiation of silicon: comparison of theory and experimentWang, J. C. / Wood, R. F. / White, C. W. / Appleton, B. R. / Pronko, P. P. / Wilson, S. R. / Christie, W. H. et al. | 1979
- 129
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Laser surface melting and subsequent solidificationMehrabian, R. / Kou, S. / Hsu, S. C. / Munitz, A. et al. | 1979
- 149
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Spatial distribution of temperature rise induced by a Gaussian laser beamLax, Melvin et al. | 1979
- 155
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Calculation of the dynamics of surface melting during laser annealingSurko, C. M. / Simons, A. L. / Auston, D. H. / Golovchenko, J. A. / Slusher, R. E. / Venkatesan, T. N. C. et al. | 1979
- 161
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Laser melt quenching and alloyingCopley, S. M. / Beck, D. / Esquivel, O. / Bass, M. et al. | 1979
- 173
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Laser transformation hardeningGnanamuthu, D. S. / Shaw, C. B. / Lawrence, W. E. / Mitchell, M. R. et al. | 1979
- 189
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Heat transfer properties and microstructures of laser surface melted alloysGreenwald, L. E. / Breinan, E. M. / Kear, B. H. et al. | 1979
- 205
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Laser assisted hot spot machiningBass, Michael / Copley, Stephen / beck, David G. / Wallace, Russell J. et al. | 1979
- 212
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Redistribution of Cu in polycrystalline and single crystal Al after laser irradiationMea, G. Della / Mazzoldi, P. et al. | 1979
- 215
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Pulsed YAG laser welding of ODS alloysKelly, T. J. et al. | 1979
- 221
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Topographical characteristics of laser surface melted metalsMoore, P. / Kim, C. / Weinman, L. S. et al. | 1979
- 225
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Analysis of laser drilling and cutting results in Al2O3 and ferritesSiekman, J. G. et al. | 1979
- 232
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Heat treatment of laser melted M2 tool steelStrutt, P. R. / Gilbert, D. A. / Nowotny, H. / Kim, Young‐Won et al. | 1979
- 239
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A microprobe study of rapidly solidified laser surface alloyed low carbon steelsWeinman, L. S. / Devault, J. N. et al. | 1979
- 245
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Laser annealing of ion‐implanted semiconductorsDvurechensky, A. V. / Kachurin, G. A. / Mustafin, T. N. et al. | 1979
- 259
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Ruby laser pulse effects in ion implanted semiconductorsRimini, E. / Baeri, P. / Campisano, S. U. / Foti, G. et al. | 1979
- 275
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Laser annealing of ion implanted siliconWhite, C. W. / Narayan, J. / Young, R. T. et al. | 1979
- 291
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New materials properties achievable by ion implantation doping and laser processingAppleton, B. R. / Larson, B. C. / White, C. W. / Narayan, J. / Wilson, S. R. / Pronko, P. P. et al. | 1979
- 299
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Effects of ruby laser pulses on virgin and amorphous silicon surface layersBell, R. O. / Muller, J. C. / Toulemonde, M. / Stuck, R. / Siffert, P. et al. | 1979
- 305
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Channeling study of the formation of arsenic clusters in siliconChu, W. K. / Masters, B. J. et al. | 1979
- 311
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Redistribution and enhanced solubility of transition metal implants in silicon following laser irradiationCullis, A. G. / Poate, J. M. / Celler, G. K. et al. | 1979
- 317
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Laser‐induced regrowth of 〈100〉 Ge implanted with B and P ionsMea, G. Della / Foti, G. / Majni, G. et al. | 1979
- 321
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Elemental and dose dependent threshold for Nd‐YAG laser induced recrystallization of siliconEggermont, G. E. J. / Tamminga, Y. / Hofker, W. K. et al. | 1979
- 325
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Annealing behavior of phosphorus implanted silicon irradiated by several lasers of different wavelengthMiyao, M. / Tamura, H. / Ohyu, K. / Tokuyama, T. et al. | 1979
- 331
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Laser annealing of hydrogen implanted amorphous siliconPeercy, P. S. / Stein, H. J. et al. | 1979
- 337
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Pulsed laser annealing of ion implanted siliconStephen, J. / Smith, B. J. / Blamires, N. G. et al. | 1979
- 344
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Laser recrystallization of ion‐implanted Si by frequency‐doubled Nd:YAG laserTsu, R. / Baglin, J. E. / Tan, T. Y. / Tsai, M. Y. / Park, K. C. / Hodgson, R. et al. | 1979
- 351
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Lattice location of As and Sb implanted in silicon after annealing with a pulsed ruby laserWilson, S. R. / White, C. W. / Pronko, P. P. / Young, R. T. / Appleton, B. R. et al. | 1979
- 357
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Laser annealing of ion‐implanted polysilicon filmsWu, C. P. / Magee, C. W. et al. | 1979
- 365
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Annealing of ion‐implanted Si using scanned laser and electron beamsGibbons, J. F. / Gat, A. / Gerzberg, L. / Lietoila, A. / Regolini, J. L. / Sigmon, T. W. / Pease, R. F. W. / Magee, T. J. / Peng, J. / Hong, J. et al. | 1979
- 381
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CO2 laser annealing of ion–implanted siliconCeller, G. K. / Borutta, R. / Brown, W. L. / Poate, J. M. / Rozgonyi, G. A. / Sheng, T. T. et al. | 1979
- 387
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Comparison of laser annealing (pulsed and continuous) and furnace annealing of low‐solid solubility, Pb‐implanted SiPaine, B. M. / Williams, J. S. / Austin, M. W. / Celler, G. K. et al. | 1979
- 393
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Recrystallization of 75As implanted silicon by a free running ruby laserRegolini, J. L. / Sigmon, T. W. / Gibbons, J. F. / Magee, T. J. / Peng, J. et al. | 1979
- 399
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Channeling analysis of Cw Argon laser annealed, As+‐Implanted siliconWilliams, J. S. / Brown, W. L. / Poate, J. M. et al. | 1979
- 405
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Infrared and Raman spectra of Boron implanted, laser annealed siliconEngstrom, Herbert / Bates, J. B. / Young, R. T. / Noonan, J. R. / White, C. W. et al. | 1979
- 411
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Prevention of dislocation arrays in thermally annealed, high dose, phosphorus‐implanted Si by prior laser annealingGoodwin, C. A. et al. | 1979
- 419
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Boundary effects in laser annealing silicon device structuresHill, C. et al. | 1979
- 425
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The removal of implantation damage in silicon by laser irradiation and its thermal stabilityHofker, W. K. / Eggermont, G. E. J. / Tamminga, Y. / Oosthoek, D. P. et al. | 1979
- 429
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Raman Spectroscopy of Pulsed‐laser annealed ion implanted siliconMorhange, J. F. / Kanellis, G. / Balkanski, M. / Peray, J. F. / Icole, J. / Croset, M. et al. | 1979
- 434
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Ellipsometric analysis of laser‐annealed Si layersNakamura, K. / Kamoshida, M. / Uehara, A. / Tatsumi, R. et al. | 1979
- 440
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Effect of thermal annealing in boron implanted, laser annealed siliconNarayan, J. / Larson, B. C. / Christie, W. H. et al. | 1979
- 446
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Extent of annealed or melted regions as a function of energy of pulsed laser irradiationNarayan, J. / White, C. W. et al. | 1979
- 453
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Characterization of laser irradiated silicon using x‐ray topographyPorter, W. A. / Parker, D. L. / Richardson, T. W. et al. | 1979
- 457
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The microstructure of laser annealing siliconRozgonyi, G. A. / Leamy, H. J. / Sheng, T. T. et al. | 1979
- 463
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Temperature distribution and microstructure in small‐diameter laser beam annealed amorphous siliconTan, T. Y. / Ho, P. S. / Tsu, R. et al. | 1979
- 470
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Pulsed electron beam annealing of ion implanted Si layersKennedy, E. F. / Lau, S. S. / Golecki, I. / Mayer, J. W. / Tseng, W. / Minnucci, J. A. / Kirkpatrick, A. R. et al. | 1979
- 475
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Processing of semiconductor materials by pulsed electron beamsKirkpatrick, A. R. / Greenwald, A. C. / Minnucci, J. A. / Little, R. G. et al. | 1979
- 481
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Comparison of effects of pulsed ruby laser and pulsed electron beam annealing of 75As+ implanted siliconWilson, S. R. / Appleton, B. R. / White, C. W. / Narayan, J. et al. | 1979
- 487
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Laser induced epitaxy of amorphous deposited siliconBean, J. C. / Leamy, H. J. / Poate, J. M. / Rozgonyi, G. A. / van der Ziel, J. / Williams, J. S. / Celler, G. K. et al. | 1979
- 492
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Laser effects on amorphous siliconBertolotti, M. / Vitali, G. / Spear, W. E. et al. | 1979
- 496
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Laser‐annealing behavior of deposited and implant‐produced amorphous Si layers on Si substratesHess, L. D. / Roth, J. A. / Anderson, C. L. / Dunlap, H. L. et al. | 1979
- 503
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A comparison of laser and electron beam pulsed annealing of deposited layersLau, S. S. / Tseng, W. F. / Golecki, I. / Kennedy, E. F. / Mayer, J. W. et al. | 1979
- 509
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Laser annealing for solid‐phase thin‐film reactionsKiau, Z. L. / Tsaur, B. Y. / Mayer, J. W. et al. | 1979
- 515
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Aluminum silicon laser alloying with implications for mass storageParks, H. G. / Kirkpatrick, C. G. et al. | 1979
- 521
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Detailed characterization of metal semiconductor alloys produced by single laser pulsesParks, H. G. / Rose, K. et al. | 1979
- 527
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Laser induced reactions of metal films with siliconPoate, J. M. / Leamy, H. J. / Sheng, T. T. / Celler, G. K. et al. | 1979
- 533
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Crystallization of amorphous silicides by energy beam annealingTan, T. Y. / Tsu, R. / Ho, P. S. / Tu, K. N. et al. | 1979
- 539
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Laser‐induced formation of metal‐silicidesWittmer, M. / von Allmen, M. et al. | 1979
- 543
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Electrical properties of laser annealed siliconBenton, J. L. / Kimerling, L. C. / Miller, G. L. / Robinson, D. A. H. / Celler, G. K. et al. | 1979
- 550
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Deep levels in ion‐implanted, CW laser‐annealed siliconJohnson, N. M. / Gold, R. B. / Lietoila, A. / Gibbons, J. F. et al. | 1979
- 556
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Charge collection microscopy of laser annealed siliconLeamy, H. J. / Ferris, S. D. / Miller, G. L. / Brown, W. L. / Celler, G. K. et al. | 1979
- 563
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Electrical characterization of low‐dose ion‐implanted silicon annealed with microsecond laser pulsesMyers, D. R. / Roitman, P. / Mayo, S. et al. | 1979
- 569
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Electrical properties and annealing kinetics study of laser‐annealed ion‐implanted siliconWang, K. L. / Liu, Y. S. / Kirkpatrick, C. G. / Possin, G. E. et al. | 1979
- 579
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Transmission electron microscopy and electrical properties measurements of laser doped silicon and GaAsYoung, R. T. / Narayan, J. / Westbrook, R. D. / Wood, R. F. et al. | 1979
- 585
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Laser‐annealed Si and Se Implants for GaAs microwave devicesAnderson, C. L. / Dunlap, H. L. / Hess, L. D. / Vaidyanathan, K. V. et al. | 1979
- 591
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Laser‐annealing of Te ion implanted GaAsGamo, K. / Katano, F. / Yuba, Y. / Murakami, K. / Namba, S. et al. | 1979
- 597
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Laser annealing of ion‐implanted GaAsKim, Quiesup / Park, Y. S. / Mason, R. S. / Luke, T. E. / Hengehold, R. L. / Yeo, Y. K. et al. | 1979
- 603
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Annealing of ion‐implanted GaAs with Nd:Glass laserLiu, S. G. / Wu, C. P. / Magee, C. W. et al. | 1979
- 616
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Pulsed annealing of implanted semi‐insulating GaAsTandon, J. L. / Eisen, F. H. et al. | 1979
- 623
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Laser induced damage and recrystallization of ion implanted GaAs by frequency‐doubled Nd:YAG laserTsu, Raphael / Baglin, John E. / Lasher, Gordon J. / Tsang, James C. et al. | 1979
- 629
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Study of surface crystallinity and stoichiometry of laser annealed GaAs using time resolved reflectivity and channelingVenkatesan, T. N. C. / Auston, D. H. / Golovchenko, J. A. / Surko, C. M. et al. | 1979
- 635
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Laser alloying of Au‐Ge ohmic contacts on GaAsGold, R. B. / Powell, R. A. / Gibbons, J. F. et al. | 1979
- 641
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Laser‐annealed ohmic contacts for GaAs microwave devicesEckhardt, G. / Anderson, C. L. / Hess, L. D. / Krumm, C. F. et al. | 1979
- 647
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Ohmic contacts produced by laser‐annealing Te‐implanted GaAsBarnes, P. A. / Leamy, H. J. / Poate, J. M. / Ferris, S. D. / Williams, J. S. / Celler, G. K. et al. | 1979
- 653
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Laser annealing of ion‐implanted indium phosphideCullis, A. G. / Webber, H. C. / Robertson, D. S. et al. | 1979
- 659
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Laser synthesis of silicon nitride powdersDanforth, S. C. / Flint, J. H. / Cannon, W. R. / Haggerty, J. S. et al. | 1979
- 665
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Laser annealing of CdSe thin filmsFeenstra, R. M. / Parsons, R. R. / Shepherd, F. R. / Westwood, W. D. / Ingrey, S. J. et al. | 1979
- 671
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A bibliography on laser processing of semiconductorsStevens, B. A. et al. | 1979