Quantification of line-edge roughness of photoresists. II. Scaling and fractal analysis and the best roughness descriptors (Englisch)
- Neue Suche nach: Constantoudis, V.
- Neue Suche nach: Patsis, G. P.
- Neue Suche nach: Tserepi, A.
- Neue Suche nach: Gogolides, E.
- Neue Suche nach: Constantoudis, V.
- Neue Suche nach: Patsis, G. P.
- Neue Suche nach: Tserepi, A.
- Neue Suche nach: Gogolides, E.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
;
21
, 3
;
1019-1026
;
2003
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Quantification of line-edge roughness of photoresists. II. Scaling and fractal analysis and the best roughness descriptors
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Beteiligte:Constantoudis, V. ( Autor:in ) / Patsis, G. P. ( Autor:in ) / Tserepi, A. ( Autor:in ) / Gogolides, E. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.05.2003
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Format / Umfang:8 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 21, Ausgabe 3
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