Time multiplexed deep reactive ion etching of germanium and silicon—A comparison of mechanisms and application to x-ray optics (Englisch)
- Neue Suche nach: Genova, Vincent J.
- Neue Suche nach: Agyeman-Budu, David N.
- Neue Suche nach: Woll, Arthur R.
- Neue Suche nach: Genova, Vincent J.
- Neue Suche nach: Agyeman-Budu, David N.
- Neue Suche nach: Woll, Arthur R.
In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
;
36
, 1
;
8
;
2018
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Time multiplexed deep reactive ion etching of germanium and silicon—A comparison of mechanisms and application to x-ray optics
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Weitere Titelangaben:Time multiplexed deep RIE of germanium and silicon
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Beteiligte:Genova, Vincent J. ( Autor:in ) / Agyeman-Budu, David N. ( Autor:in ) / Woll, Arthur R. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.01.2018
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Format / Umfang:8 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 36, Ausgabe 1
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