Molecular‐beam epitaxy and migration‐enhanced epitaxy growth modes of GaAs on pseudomorphic Si films grown on GaAs(100) substrates (Englisch)
- Neue Suche nach: López, M.
- Neue Suche nach: Yamauchi, Y.
- Neue Suche nach: Kawai, T.
- Neue Suche nach: Takano, Y.
- Neue Suche nach: Pak, K.
- Neue Suche nach: Yonezu, H.
- Neue Suche nach: López, M.
- Neue Suche nach: Yamauchi, Y.
- Neue Suche nach: Kawai, T.
- Neue Suche nach: Takano, Y.
- Neue Suche nach: Pak, K.
- Neue Suche nach: Yonezu, H.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
;
10
, 5
;
2157-2162
;
1992
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Molecular‐beam epitaxy and migration‐enhanced epitaxy growth modes of GaAs on pseudomorphic Si films grown on GaAs(100) substrates
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Weitere Titelangaben:MBE and MEE growth modes of GaAs
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Beteiligte:López, M. ( Autor:in ) / Yamauchi, Y. ( Autor:in ) / Kawai, T. ( Autor:in ) / Takano, Y. ( Autor:in ) / Pak, K. ( Autor:in ) / Yonezu, H. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.09.1992
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Format / Umfang:6 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 10, Ausgabe 5
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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