Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors (Englisch)
- Neue Suche nach: Kim, Hong-Yeol
- Neue Suche nach: Kim, Jihyun
- Neue Suche nach: Liu, Lu
- Neue Suche nach: Lo, Chien-Fong
- Neue Suche nach: Ren, Fan
- Neue Suche nach: Pearton, Stephen J.
- Neue Suche nach: Kim, Hong-Yeol
- Neue Suche nach: Kim, Jihyun
- Neue Suche nach: Liu, Lu
- Neue Suche nach: Lo, Chien-Fong
- Neue Suche nach: Ren, Fan
- Neue Suche nach: Pearton, Stephen J.
In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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31
, 5
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4
;
2013
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors
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Weitere Titelangaben:Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN HEMTs
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Beteiligte:Kim, Hong-Yeol ( Autor:in ) / Kim, Jihyun ( Autor:in ) / Liu, Lu ( Autor:in ) / Lo, Chien-Fong ( Autor:in ) / Ren, Fan ( Autor:in ) / Pearton, Stephen J. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.09.2013
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Format / Umfang:4 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 31, Ausgabe 5
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