The role of sandwich holography in inertial confinement fusion (Englisch)
- Neue Suche nach: Pattinson, Theodore R.
- Neue Suche nach: Musinski, Donald L.
- Neue Suche nach: Felmlee, William J.
- Neue Suche nach: Pattinson, Theodore R.
- Neue Suche nach: Musinski, Donald L.
- Neue Suche nach: Felmlee, William J.
In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
;
7
, 3
;
993-995
;
1989
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:The role of sandwich holography in inertial confinement fusion
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Weitere Titelangaben:Role of sandwich holography in ICF
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Beteiligte:Pattinson, Theodore R. ( Autor:in ) / Musinski, Donald L. ( Autor:in ) / Felmlee, William J. ( Autor:in )
-
Erschienen in:
-
Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.05.1989
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Format / Umfang:3 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 7, Ausgabe 3
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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TiN formed by ion beam nitriding of TiSi2Hörnström, S. E. / Moy, D. / Charai, A. / Harper, J. M. E. / Robertsson, A. / Gong, S. F. et al. | 1989
- 570
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Low hydrogen content silicon nitride deposited at low temperature by novel remote plasma techniqueHattangady, S.V. / Fountain, G. G. / Rudder, R. A. / Markunas, R. J. et al. | 1989
- 576
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Evidence for the occurrence of subcutaneous oxidation during low temperature remote plasma enhanced deposition of silicon dioxide filmsFountain, G. G. / Hattangady, S. V. / Rudder, R. A. / Markunas, R. J. / Lucovsky, G. / Kim, S. S. / Tsu, D. V. et al. | 1989
- 581
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GaAs(100) substrate cleaning by thermal annealing in hydrogenBernstein, R. W. / Grepstad, J. K. et al. | 1989
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Interplay between computer simulation and transport theory in the analysis of ion‐beam‐induced collision processes in solidsSigmund, Peter et al. | 1989
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Epitaxial silicide interfaces: Fabrication and propertiesTung, R. T. et al. | 1989
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The influence of Sb doping on the growth and electronic properties of GaAs(100) and AlGaAs(100)Jamison, K. D. / Chen, H. C. / Bensaoula, A. / Lim, W. / Trombetta, L. / Ignatiev, A. et al. | 1989
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Modulation of internal piezoelectric fields in strained‐layer superlattices grown along the [111] orientationMailhiot, C. / Smith, D. L. et al. | 1989
- 616
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Molecular‐beam epitaxial growth and x‐ray characterization of (Zn,Cd)Te/CdTe strained layer superlatticesGolding, T. D. / Qadri, S. B. / Dinan, J. H. et al. | 1989
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Selectivity loss during tungsten chemical vapor deposition: The role of tungsten pentafluorideCreighton, J. R. et al. | 1989
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Gas/surface reactions in the chemical vapor deposition of tungsten using WF6/SiH4 mixturesYu, Ming L. / Eldridge, Benjamin N. et al. | 1989
- 630
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The role of oxygen in chemical vapor deposition nucleation barriers of triisobutylaluminum on siliconMantell, David A. et al. | 1989
- 634
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The decomposition of [Mn(CO)5]2(μ‐SiH2)Stauf, G. T. / Dowben, P. A. / Emrich, K. / Hirschwald, W. / Boag, N. M. et al. | 1989
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A thermal desorption and x‐ray photoelectron spectroscopy study of the surface chemistry of iron pentacarbonylZaera, Francisco et al. | 1989
- 646
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A surface analytical study of GaAs(100) cleaning proceduresLu, Z. H. / Lagarde, C. / Sacher, E. / Currie, J. F. / Yelon, A. et al. | 1989
- 651
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Effect of the sputtering ambient contamination on the microstructure of Al–Si filmsQueirolo, G. / Dellagiovanna, M. / De Santi, G. et al. | 1989
- 656
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Inverse photoemission and resonant photoemission characterization of semimagnetic semiconductorsWall, A. / Franciosi, A. / Gao, Y. / Weaver, J. H. / Tsai, M.‐H. / Dow, J. D. / Kasowski, R. V. et al. | 1989
- 663
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Remote plasma enhanced chemical vapor deposition of silicon nitride on III–V semiconductors: X‐ray photoelectron spectroscopy studies of the interfaceSodhi, Rana N. S. / Lau, W. M. / Ingrey, S. I. J. et al. | 1989
- 670
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Isotropic plasma etching of doped and undoped silicon dioxide for contact holes and viasvan den Hoek, W. G. M. / Wicker, T. E. / Westlund, B. F. / Powell, G. B. et al. | 1989
- 676
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Stoichiometric dry etching of mercury cadmium telluride using a secondary afterglow reactorSpencer, John E. / Dinan, J. H. / Boyd, P. R. / Wilson, H. / Buttrill, S. E. et al. | 1989
- 682
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A process for improved Al(Cu) reactive ion etchingHu, C.‐K. / Canney, B. / Pearson, D. J. / Small, M. B. et al. | 1989
- 686
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Selective etching of silicon nitride using remote plasmas of CF4 and SF6Loewenstein, Lee M. et al. | 1989
- 691
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High‐selectivity plasma etching of silicon dioxide on single‐wafer etchersYin, Gerald Z. / Ben‐Dor, Monique / Chang, Mark S. / Yep, Tom O. et al. | 1989
- 696
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Understanding of surface chemistry of III–V metalorganic chemical vapor deposition reactantsLüth, Hans et al. | 1989
- 701
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Growth of cubic phase gallium nitride by modified molecular‐beam epitaxyPaisley, M. J. / Sitar, Z. / Posthill, J. B. / Davis, R. F. et al. | 1989
- 706
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Photo‐metalorganic molecular‐beam epitaxy: A new epitaxial growth techniqueTokumitsu, Eisuke / Yamada, Takumi / Konagai, Makoto / Takahashi, Kiyoshi et al. | 1989
- 711
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Reflectance–difference studies of organometallic chemical vapor deposition growth transients on (001) GaAsAspnes, D. E. / Bhat, R. / Colas, E. / Keramidas, V. G. / Koza, M. A. / Studna, A. A. et al. | 1989
- 717
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Schottky barrier formation by silicon deposition on unreactive and reactive metal substratesChang, Y. / Hanson, J. / Hwu, Y. / Zanini, F. / Margaritondo, G. et al. | 1989
- 720
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Electronic surface changes induced in silicon by hydrogen, oxygen, and cesium coveragesSouzis, A. E. / Seidl, M. / Carr, W. E. / Huang, H. et al. | 1989
- 724
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Arsenic on GaAs: Fermi‐level pinning and thermal desorption studiesChiang, T. T. / Spicer, W. E. et al. | 1989
- 731
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Temperature control of morphology and barrier formation at the In/GaAs(110) interfaceMiyano, K. E. / Cao, R. / Kendelewicz, T. / Lindau, I. / Spicer, W. E. et al. | 1989
- 738
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Fermi‐level pinning at the interfaces of Sb, Sn, and Ge on GaAs(110) surfacesCao, Renyu / Miyano, K. / Lindau, I. / Spicer, W. E. et al. | 1989
- 744
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Formation of the Ca/GaAs(110) interfaceMao, D. / Young, K. / Stiles, K. / Kahn, A. et al. | 1989
- 749
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Resonant photoemission from the Ni–GaAs(110) interfaceKendelewicz, T. / Cao, R. / Miyano, K. / Lindau, I. / Spicer, W. E. et al. | 1989
- 753
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Circuit modeling of GaAs: a‐SiC interfacesSoukup, R. J. / Sullivan, J. R. et al. | 1989
- 758
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Energies and symmetries in interface formation: In/GaP(110) and Ga/InP(110)Vitomirov, I. M. / Aldao, C. M. / Schabel, M. / Waddill, G. D. / Anderson, S. G. / Weaver, J. H. et al. | 1989
- 765
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Unique band bending at the Sb/InP(110) interfaceKendelewicz, T. / Cao, R. / Miyano, K. / Lindau, I. / Spicer, W. E. et al. | 1989
- 770
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Structural and electrical characterization of InAs grown on GaAs substrates by molecular‐beam epitaxySheldon, P. / Al‐Jassim, M. M. / Jones, K. M. / Goral, J. P. / Yacobi, B. G. et al. | 1989
- 775
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Strained‐layer epitaxy of SnTe on CdTe(110)Höchst, Hartmut / Niles, David W. / Engelhardt, Michael A. / Hernández‐Calderón, Isaac et al. | 1989
- 780
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High‐temperature stable TaSix –GaAs Schottky barrierKao, C. H. / Huang, F. S. / Huang, S. L. et al. | 1989
- 784
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A comparison between aluminum and copper interactions with high‐temperature oxide and nitride diffusion barriersCharai, A. / Hörnström, S. E. / Thomas, O. / Fryer, P. M. / Harper, J. M. E. et al. | 1989
- 790
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Reaction of Au4 and Ga(CH3)3 with GaAs(110)Menon, Madhu / Allen, Roland E. et al. | 1989
- 792
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Growth of GaAs on Si using ionized cluster beam techniqueKim, K. / Sung, M. Y. / Hsieh, K. C. / Cowell, E. W. / Feng, M. S. / Cheng, K. Y. et al. | 1989
- 796
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Activation and recrystallization of ion‐implanted amorphous silicon films by rapid thermal annealingKim, Youn Tae / Yoo, Hyung Joun / Jun, Chi Hoon / Jang, Won Ick / Kim, Sang Ho et al. | 1989
- 802
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Development of an ultrahigh vacuum, in vacuo wafer transfer facility integrated processingRudder, R. A. / Hendry, R. C. / Markunas, R. J. et al. | 1989
- 808
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Reaction of water with hydrofluoric acid treated silicon(111) and (100) surfacesGräf, D. / Grundner, M. / Schulz, R. et al. | 1989
- 814
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Influence of target microstructure on the propensity for whisker growth in sputter‐deposited aluminum alloy filmsSucco, L. / Esposito, J. / Cleeves, Monty / Whitney, S. / Lionetti, R. E. / Wickersham, C. E. et al. | 1989
- 817
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Interface formation by atom and cluster deposition: Novel electronic and structural propertiesAldao, C. M. / Waddill, G. D. / Vitomirov, I. M. / Weaver, J. H. et al. | 1989
- 822
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Minority‐carrier lifetime in AlxGa1−xAsAhrenkiel, R. K. / Dunlavy, D. J. et al. | 1989
- 827
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High‐efficiency solar cells fabricated from direct‐current magnetron sputtered n‐indium tin oxide onto p‐InP grown by atmospheric pressure metalorganic vapor phase epitaxyLi, X. / Wanlass, M. W. / Gessert, T. A. / Emery, K. A. / Coutts, T. J. et al. | 1989
- 833
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High‐efficiency CdTe thin‐film solar cells using metalorganic chemical vapor deposition techniquesNouhi, A. / Stirn, R. J. / Meyers, P. V. / Liu, C. H. et al. | 1989
- 837
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Interface properties of (Cd,Zn)S/CuInSe2 single‐crystal solar cellsAbou‐Elfotouh, F. A. / Kazmerski, L. L. / Coutts, T. J. / Matson, R. J. / Asher, S. E. / Nelson, A. J. / Swartzlander‐Franz, A. B. et al. | 1989
- 842
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Surface emitting semiconductor laser array: Its advantage and futureIga, K. / Koyama, F. / Kinoshita, S. et al. | 1989
- 847
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The mechanical field effect transistor: A new force sensorSteinbrüchel, Christoph et al. | 1989
- 850
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Electronic structure of an ordered overlayer on a semiconductor: Bi/GaAs(110)Joyce, J. J. / Anderson, J. / Nelson, M. M. / Yu, C. / Lapeyre, G. J. et al. | 1989
- 855
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Interface states and Schottky barrier formation at metal/GaAs junctionsViturro, R. E. / Mailhiot, C. / Shaw, J. L. / Brillson, L. J. / LaGraffe, D. / Margaritondo, G. / Pettit, G. D. / Woodall, J. M. et al. | 1989
- 861
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Evidence for two pinning mechanisms with noble metals on InP(110)Cao, Renyu / Miyano, K. / Lindau, I. / Spicer, W. E. et al. | 1989
- 865
-
Temperature‐dependent interface morphology and Schottky barrier evolution for Au/InP(110)Waddill, G. D. / Aldao, C. M. / Vitomirov, I. M. / Gao, Y. / Weaver, J. H. et al. | 1989
- 870
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Effects of thin interlayers on Ag/(HgCd)Te interface behaviorDavis, G. D. / Beck, W. A. / Kilday, D. G. / McKinley, J. T. / Margaritondo, G. et al. | 1989
- 875
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Mechanisms for success or failure of diffusion barriers between aluminum and siliconHarper, J. M. E. / Hörnström, S. E. / Thomas, O. / Charai, A. / Krusin‐Elbaum, L. et al. | 1989
- 883
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Electron cyclotron resonance microwave discharges for etching and thin‐film depositionAsmussen, Jes et al. | 1989
- 894
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Characteristics of electron cyclotron resonance plasma sourcesPopov, O. A. et al. | 1989
- 899
-
Plasma characterization for a divergent field electron cyclotron resonance sourceForster, John / Holber, William et al. | 1989
- 903
-
Plasma characterization of an electron cyclotron resonance–radio‐frequency hybrid plasma reactorLee, Young H. / Heidenreich, John E. / Fortuno, Guadalupe et al. | 1989
- 908
-
Optical emission characterization of a divergent magnetic field electron cyclotron resonance sourceMcKillop, John S. / Forster, John C. / Holber, William M. et al. | 1989
- 914
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Electron cyclotron resonance plasma stream source for plasma enhanced chemical vapor depositionPopov, O. A. / Waldron, H. et al. | 1989
- 918
-
A broad‐beam electron cyclotron resonance ion source for sputtering etching and deposition of materialGhanbari, E. / Trigor, I. / Nguyen, T. et al. | 1989
- 925
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Review of hydrogen pellet injection technology for plasma fueling applicationsMilora, S. L. et al. | 1989
- 938
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Tritium pellet injector resultsFisher, P. W. / Bauer, M. L. / Baylor, L. R. / Combs, S. K. / Deleanu, L. E. / Fehling, D. T. / Foster, C. A. / Gouge, M. J. / Milora, S. L. / Schuresko, D. D. et al. | 1989
- 944
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Tritium neutral beams for the Tokamak Fusion Test ReactorGrisham, L. R. / Dylla, H. F. / Williams, M. D. / Wright, K. / Causey, R. et al. | 1989
- 949
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Simplified eight‐shot pneumatic pellet injector for plasma fueling applications on the Princeton Beta Experiment and on the Advanced Toroidal FacilitySchuresko, D. D. / Cole, M. J. / Fisher, P. W. / Qualls, A. L. / Bauer, M. L. / Wysor, R. B. / Lickliter, P. / Webster, D. J. / Argo, B. E. / Combs, S. K. et al. | 1989
- 955
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Investigation of the behavior of a plasma‐arc armature inside a two‐stage railgun and methods for preventing arcingKim, Kyekyoon / Zhang, David J. et al. | 1989
- 959
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Solid deuterium pellet injection with a two‐stage pneumatic gunReggiori, A. / Riva, G. / Daminelli, G. / Frattolillo, A. / Martinis, L. / Scaramuzzi, F. et al. | 1989
- 963
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Development of a two‐stage light gas gun to accelerate hydrogen pellets to high speeds for plasma fueling applicationsCombs, S. K. / Milora, S. L. / Foust, C. R. / Gouge, M. J. / Fehling, D. T. / Sparks, D. O. et al. | 1989
- 968
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Optical emission in magnetrons: Nonlinear aspectsRossnagel, S. M. / Saenger, K. L. et al. | 1989
- 972
-
Measurements of time varying plasma potential, temperature, and density in a 13.56 MHz radio‐frequency dischargeWilson, Jeffrey L. / Caughman, J. B. O. / Nguyen, Phi Long / Ruzic, D. N. et al. | 1989
- 977
-
Laser‐induced fluorescence measurement of plasma ion temperatures: Corrections for power saturationGoeckner, M. J. / Goree, J. et al. | 1989
- 982
-
Plasma‐enhanced photoemission in argon discharges: Signal characterization and silicon doping effectsSelwyn, Gary S. / Singh, J. et al. | 1989
- 987
-
Magnetic field effects on cylindrical magnetron reactive ion etching of Si/SiO2 in CF4 and CF4/H2 plasmasYeom, Geun Young / Kushner, Mark J. et al. | 1989
- 993
-
The role of sandwich holography in inertial confinement fusionPattinson, Theodore R. / Musinski, Donald L. / Felmlee, William J. et al. | 1989
- 996
-
High‐Z elements in laser fusion targetsGobby, P. L. / Moore, J. E. / Snow, R. C. / Archuleta, T. A. / Espinoza, B. F. / Gomez, V. M. / Barthell, B. L. et al. | 1989
- 1001
-
Comparison of experimental measurements and model predictions for radio‐frequency Ar and SF6 dischargesGogolides, Evangelos / Nicolai, Jean‐Philippe / Sawin, Herbert H. et al. | 1989
- 1007
-
Macroscopic modeling of radio‐frequency plasma dischargesMisium, G. R. / Lichtenberg, A. J. / Lieberman, M. A. et al. | 1989
- 1014
-
Low‐frequency turbulent transport in magnetron plasmasSheridan, T. E. / Goree, J. et al. | 1989
- 1019
-
Measurements of secondary electron emission in reactive sputtering of aluminum and titanium nitrideLewis, Mark A. / Glocker, David A. / Jorne, Jacob et al. | 1989
- 1025
-
Energetic particle bombardment of films during magnetron sputteringRossnagel, S. M. et al. | 1989
- 1030
-
Surface analysis of realistic semiconductor microstructuresOehrlein, Gottlieb S. / Chan, Kevin K. / Jaso, Mark A. / Rubloff, Gary W. et al. | 1989
- 1035
-
Competitive reactions of fluorine and oxygen with W, WSi2, and Si surfaces in reactive ion etching using CF4/O2Oehrlein, Gottlieb S. / Lindstöm, J. Lennart et al. | 1989
- 1042
-
Measurement of hydrogen permeation through bilayer copper–iron membranesHaasz, A. A. / Andrew, P. L. / Antoniazzi, A. B. et al. | 1989
- 1047
-
Glow‐discharge removal of codeposited carbon films in graphite‐lined tokamak reactorsHsu, Wen L. et al. | 1989
- 1052
-
Tritium retention on the Tokamak Fusion Test Reactor neutral beam componentsCausey, R. / Jalbert, R. et al. | 1989
- 1055
-
Deuterium pumping speed measurements on 77 K cryopanels and implications for deuterium–tritium retention in neutral beam systemsDylla, H. F. et al. | 1989
- 1060
-
Initial results for ion‐induced release of hydrogen and deuterium from AXF‐5Q graphite by hydrogen and deuteriumLangley, R. A. et al. | 1989
- 1065
-
Carbon deposition in the gaps between tiles: Data from the Tokamak Fusion Test Reactor and laboratory simulation studiesHsu, W. L. / Mills, B. E. / Ehrhardt, A. B. / Sun, Y. C. et al. | 1989
- 1070
-
In situ spectroscopic measurements of erosion behavior of Tokamak Fusion Test Reactor redeposited carbon materials under high‐flux plasma bombardment in Plasma Interactive Surface Component Experimental Station‐AHirooka, Y. / Pospieszczyk, A. / Conn, R. W. / Mills, B. / Nygren, R. E. / Ra, Y. et al. | 1989
- 1078
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Tritium release from a codeposited layer of carbon and tritium during air exposureCausey, R. A. / Chrisman, W. L. / Hsu, W. L. / Anderl, R. / Wishard, B. et al. | 1989
- 1083
-
Measurements of energy and flux of neutrals at the wall in the Tokamak Fusion Test ReactorWampler, W. R. / Kilpatrick, S. J. et al. | 1989
- 1087
-
Hydrogen isotope trapping on graphite collectors during an isotope exchange experiment in the Tokamak Fusion Test ReactorKilpatrick, S. J. / Nygren, R. / Wampler, W. R. / Ulrickson, M. / Dylla, H. F. / Manos, D. M. / Ramsey, A. T. / Hirooka, Y. et al. | 1989
- 1092
-
Floating potential measurements in the near field of an ion cyclotron resonance heating antennaCaughman, J. B. O. / Ruzic, D. N. / Hoffman, D. J. et al. | 1989
- 1099
-
Low‐temperature pulsed plasma deposition. II. The production of novel amorphous compounds of germanium in thin filmScarsbrook, G. / Llewellyn, I. P. / Heinecke, R. A. et al. | 1989
- 1105
-
Particle bombardment effects on thin‐film deposition: A reviewMattox, D. M. et al. | 1989
- 1115
-
Optical emission and mass spectroscopic studies of the gas phase during the deposition of SiO2 and a‐Si:H by remote plasma‐enhanced chemical vapor depositionTsu, D. V. / Parsons, G. N. / Lucovsky, G. / Watkins, M. W. et al. | 1989
- 1124
-
Precursors for the deposition of amorphous silicon–hydrogen alloys by remote plasma enhanced chemical vapor depositionParsons, G. N. / Tsu, D. V. / Wang, C. / Lucovsky, G. et al. | 1989
- 1130
-
Characterization of epitaxial Ge films grown by remote plasma enhanced chemical vapor deposition on Ge(111) and GaAs(111) substratesPosthill, J. B. / Rudder, R. A. / Hattangady, S. V. / Fountain, G. G. / Vitkavage, D. J. / Markunas, R. J. / Parikh, N. R. / Yu, N. et al. | 1989
- 1136
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Atomic structure in SiO2 thin films deposited by remote plasma‐enhanced chemical vapor depositionLucovsky, G. / Fitch, J. T. / Tsu, D. V. / Kim, S. S. et al. | 1989
- 1145
-
Selective reactive ion etching of silicon nitride on oxide in a multifacet (‘‘HEX’’) plasma etching machineStocker, Hans J. et al. | 1989
- 1150
-
Why cryogenic inertial confinement fusion targets?Larsen, Jon T. et al. | 1989
- 1157
-
Beta heating driven deuterium–tritium ice redistribution, modeling studiesMartin, Alfred J. / Simms, Richard J. / Wineberg, Steve B. et al. | 1989
- 1161
-
Uniform solid deuterium–tritium fuel layers resulting from radioactively induced sublimationHoffer, J. K. / Foreman, L. R. et al. | 1989
- 1165
-
Target fabrication for laser fusion research in JapanNorimatsu, T. / Kato, Y. / Nakai, S. / Kubo, U. et al. | 1989
- 1170
-
An analysis of the stability of a uniform liquid fuel layer inside a spherical‐shell cryogenic inertial confinement fusion targetIslam Raja, M. M. / Kim, K. / Bernat, T. P. et al. | 1989
- 1177
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Geometric characterization of macroshell targetsAlway, Peter C. / Scott, Larry A. / Martin, Alfred J. et al. | 1989
- 1181
-
Fabrication of hollow silica aerogel spheres by a droplet generation method and sol–gel processingKim, N. K. / Kim, K. / Payne, D. A. / Upadhye, R. S. et al. | 1989
- 1187
-
Ar and excess N incorporation in epitaxial TiN films grown by reactive bias sputtering in mixed Ar/N2 and pure N2 dischargesHultman, L. / Sundgren, J.‐E. / Markert, L. C. / Greene, J. E. et al. | 1989
- 1194
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Effects of low‐energy low‐flux ion bombardment on the properties of VO2 thin filmsCase, Francine C. et al. | 1989
- 1199
-
Properties of ion beam deposited Pb1−xLax(ZryTiz)1−x/4O3Boyer, L. L. / Wu, A. Y. / Metzger, G. W. / McNeil, J. R. et al. | 1989
- 1202
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Aluminum sputtering with intermittent pulse bias applicationShimamura, Hideaki / Fujita, Shoyo / Sakata, Masao / Kamei, Tsuneaki / Kobayashi, Shigeru et al. | 1989
- 1206
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Anisotropic surface mobility of aluminum on Si(111) during the initial stage of vapor depositionLevenson, L. L. / Usui, H. / Yamada, I. / Takagi, T. / Swartzlander, A. B. et al. | 1989
- 1210
-
Effect of hydrogen on the microstructural, optical, and electronic properties of a‐Si:H thin films deposited by direct current magnetron reactive sputteringPinarbasi, M. / Maley, N. / Kushner, M. J. / Myers, A. / Abelson, J. R. / Thornton, J. A. et al. | 1989
- 1215
-
Effect of hydrogen on carbon incorporation in indium antimonide layers grown by metalorganic magnetron sputteringRao, T. Sudersena / Webb, J. B. / Beaulieu, Y. / Brebner, J. L. / Noad, J. P. / Jackman, J. et al. | 1989
- 1220
-
Structural stability of ZrO2–Al2O3 thin films deposited by magnetron sputteringQadri, S. B. / Gilmore, C. M. / Quinn, C. / Skelton, E. F. / Gossett, C. R. et al. | 1989
- 1225
-
Process modeling of reactive sputteringBerg, S. / Blom, H.‐O. / Moradi, M. / Nender, C. / Larsson, T. et al. | 1989
- 1230
-
The formation and control of direct current magnetron discharges for the high‐rate reactive processing of thin filmsHowson, R. P. / Spencer, A. G. / Oka, K. / Lewin, R. W. et al. | 1989
- 1235
-
The transition from αZr to αZrO2 growth in sputter‐deposited films as a function of gas O2 content, rare‐gas type, and cathode voltageKwok, Chee‐Kin / Aita, Carolyn Rubin et al. | 1989
- 1240
-
High‐rate reactive sputter deposition of aluminum oxideJones, Fletcher / Logan, Joseph et al. | 1989
- 1248
-
Reactive magnetron sputtered zirconium oxide and zirconium silicon oxide thin filmsRussak, Michael A. / Jahnes, Christopher V. / Katz, Eric P. et al. | 1989
- 1254
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A modified technique for the production of Al2O3 by direct current reactive magnetron sputteringPang, T. M. / Scherer, M. / Heinz, B. / Williams, C. / Chaput, G. N. et al. | 1989
- 1259
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Thermal conductivity of thin films: Measurements and understandingCahill, David G. / Fischer, Henry E. / Klitsner, Tom / Swartz, E. T. / Pohl, R. O. et al. | 1989
- 1267
-
Infrared absorption and thermal evolution study of hydrogen bonding in a‐SiHMaley, N. / Myers, A. / Pinarbasi, M. / Leet, D. / Abelson, J. R. / Thornton, J. A. et al. | 1989
- 1271
-
Optical‐ and magneto‐optical measurements using a variable angle of incidence spectroscopic ellipsometer: Application to DyCo multilayersMcGahan, William A. / Shan, Z. S. / Massengale, Alan M. / Tiwald, Thomas E. / Woollam, John A. et al. | 1989
- 1273
-
The effects of copper underlays on the stability of gold thin films during isothermal annealingKim, J. Y. / Hummel, R. E. / DeHoff, R. T. et al. | 1989
- 1279
-
Transport properties of sputtered molybdenum silicide thin films as a function of grain sizeThorpe, T. P. / Morrish, A. A. / Qadri, S. B. et al. | 1989
- 1282
-
On the multiple fracture of low‐elongation thin films deposited on high‐elongation substratesWojciechowski, P. H. / Mendolia, M. S. et al. | 1989
- 1289
-
Surface roughness and fractal nature of thin films of MgF2 and Ag/MgF2Varnier, F. / Mayani, N. / Rasigni, G. et al. | 1989
- 1294
-
Mixed‐metal‐oxide planar optical waveguidesArjavalingam, G. / Russak, M. A. / Jahnes, C. V. / Jackson, K. P. et al. | 1989
- 1298
-
Alumina films by sputter deposition with Ar/O2: Preparation and characterizationBhatia, C. S. / Guthmiller, G. / Spool, A. M. et al. | 1989
- 1303
-
Carbon contaminant in the ion processing of aluminum oxide filmChaug, Yi‐Shung / Roy, Nripen et al. | 1989
- 1305
-
Sputter deposition of aluminum and other alloys at cryogenic temperaturesChambers, D. L. / Wan, C. T. / Susi, G. T. / Taylor, K. A. et al. | 1989
- 1310
-
Temperature effects on structure and optical properties of radio‐frequency sputtered VO2Razavi, A. / Hughes, T. / Antinovitch, J. / Hoffman, J. et al. | 1989
- 1314
-
Effects of microstructure and nonstoichiometry on electrical properties of vanadium dioxide filmsKusano, Eiji / Theil, Jeremy A. et al. | 1989
- 1318
-
Optical and compositional properties of a‐Si:H/transparent conductive oxide interfacesRava, P. / Perino, M. A. / Pirri, C. F. / Galloni, R. / Carnera, A. et al. | 1989
- 1322
-
The electrical characterization of whole wafer silicon on sapphire for process controlMcLeod, Donald / Shields, D. A. / Maurits, J. E. A. / Forbes, D. H. et al. | 1989
- 1329
-
Si planar doping of GaAsTorabi, A. / Haugen, R. B. / Harris, H. M. / Summers, C. J. et al. | 1989
- 1334
-
Thin‐film topography control with transient liquid underlayerKhandros, Igor Y. / Baseman, Robert J. / Farrell, Curtis E. / Ting, Chung‐Y. et al. | 1989
- 1341
-
Determination of overlayer growth by angle‐resolved Auger electron spectroscopyIdzerda, Y. U. / Lind, D. M. / Prinz, G. A. et al. | 1989
- 1345
-
Effects of the film thickness on the interfacial reaction of Pt/(111)SiChen, Jiann‐Ruey / Chang, Li‐Di / Yeh, Fon‐Shan et al. | 1989
- 1350
-
Electron energy‐loss spectroscopy analysis of low‐temperature plasma‐enhanced chemically vapor deposited a‐C:H filmsNelson, A. J. / Benson, D. K. / Tracy, C. E. / Kazmerski, L. L. / Wager, J. F. et al. | 1989
- 1353
-
Fundamental aspects of film nucleation and growthTiller, William A. et al. | 1989
- 1360
-
Structural characterization of Zn1−xCoxSe epilayers on GaAs(001)Jonker, B. T. / Qadri, S. B. / Krebs, J. J. / Prinz, G. A. / Salamanca‐Young, L. et al. | 1989
- 1366
-
Monte Carlo simulations of phase separation during growth of semiconductor alloysKaspi, R. / Barnett, S. A. et al. | 1989
- 1372
-
Heteroepitaxy of 76Ge films on GaAs by direct deposition from a low‐energy ion beamHaynes, T. E. / Zuhr, R. A. / Pennycook, S. J. / Larson, B. C. / Appleton, B. R. et al. | 1989
- 1378
-
In situ ellipsometry as a diagnostic of thin‐film growth: Studies of amorphous carbonCollins, R. W. et al. | 1989
- 1386
-
The effect of vapor incidence angle upon thin‐film columnar growthMazor, A. / Bukiet, B. G. / Srolovitz, D. J. et al. | 1989
- 1392
-
A study of voids in sputtered SiO2Logan, Joseph S. / Hait, Mitchell J. / Jones, Harris C. / Firth, Gerald R. / Thompson, David B. et al. | 1989
- 1397
-
Composition distribution and magnetic characteristics of sputtered Permalloy films with substrate angleNakagawa, Y. / Ohshita, Y. / Narishige, S. / Setoyama, E. et al. | 1989
- 1402
-
A study of the chemical and physical interaction between copper and polyimideShih, D‐Y. / Paraszczak, J. / Klymko, N. / Flitsch, R. / Nunes, S. / Lewis, J. / Yang, C. / Cataldo, J. / McGouey, R. / Graham, W. et al. | 1989
- 1413
-
Thin‐film deposition in ultraclean environmentsLewis, K. L. / Muirhead, I. T. / Pitt, A. M. / Cullis, A. G. / Williams, G. M. / Wyatt‐Davies, T. J. et al. | 1989
- 1420
-
Growth and material characterization of PbSnSe/PbSe heterostructuresMartínez‐Collazo, Antonio / Santiago, Francisco / Chu, Tak‐Kin et al. | 1989
- 1424
-
Substrate temperature effect on the optical properties of radio‐frequency sputtered CuInSe2 thin filmsSantamaria, J. / Martil, I. / Iborra, E. / Gonzalez Diaz, G. / Sanchez Quesada, F. et al. | 1989
- 1428
-
Band gap and optical constants of microcrystalline CdTe thin filmsMeléndez‐Lira, M. / Jiménez‐Sandoval, S. / Hernández‐Calderón, I. et al. | 1989
- 1432
-
In situ deposition monitoring for solar film production by roll coatingMeyer, Stephen F. et al. | 1989
- 1436
-
Microstructure analysis of thin films deposited by reactive evaporation and by reactive ion platingGuenther, Karl H. / Loo, Boon / Burns, David / Edgell, Jo / Windham, Debbie / Müller, Karl‐Heinz et al. | 1989
- 1446
-
Properties of low‐pressure chemical vapor deposited dielectric films from hexamethyldisilazaneFreeman, Dean / Kern, Werner et al. | 1989
- 1451
-
Preparation and characterization of ZnS thin films produced by metalorganic chemical vapor depositionSmith, Patricia B. et al. | 1989
- 1456
-
Comparative study of dielectric formation by furnace and rapid isothermal processingSingh, R. / Radpour, F. / Chou, P. et al. | 1989
- 1461
-
Dependence of the electrical properties of KNO3 memory devices on fabrication and processing parametersKulkarni, A. K. / Rohrer, G. A. / McMillan, L. D. / Adams, S. E. et al. | 1989
- 1467
-
Nucleation of new solid phases from chemical interactions at an interfaced’Heurle, F. M. et al. | 1989
- 1472
-
Epitaxial orientation and morphology of thin CoSi2 films grown on Si(100): Effects of growth parametersYalisove, S. M. / Tung, R. T. / Loretto, D. et al. | 1989
- 1475
-
Room‐temperature study of cobalt metal growth on Ge(111)Smith, G. A. / Luo, L. / Hashimoto, Shin / Gibson, W. M. / Lewis, N. et al. | 1989
- 1479
-
Amorphous silicide formation by thermal reaction: A comparison of several metal–silicon systemsHolloway, Karen / Sinclair, Robert / Nathan, Menachem et al. | 1989
- 1484
-
Metal/Al/Si contacts formed by eutectic rapid thermal meltingKatz, A. / Komem, Y. et al. | 1989
- 1488
-
TiSi2 formation by rapid thermal processing in a diffusion furnaceKumar, P. K. Ashwini / Kumar, Vijay / Sarkar, S. K. et al. | 1989
- 1492
-
Diffusion of silicon in Pd2Si during growthComrie, C. M. / Egan, J. M. et al. | 1989
- 1497
-
Fundamental factors governing improved performance of Al–Si/Ti multilayer metallization for very large scale integrationJoshi, A. / Hu, H. S. / Yaney, D. L. / Gardner, D. / Saraswat, K. et al. | 1989
- 1529
-
The effect of electron transmission function on calculated Auger sensitivity factorsMroczkowski, Susan J. et al. | 1989
- 1535
-
Reduction of noise amplification in processing noise containing data using global approximation based on spline functionsSasse, A. G. B. M. / Wormeester, H. / van Silfhout, A. et al. | 1989
- 1539
-
Quantitative secondary ion mass spectrometry analysis of contaminants in TaSi2 thin filmsStevie, F. A. / Kahora, P. M. / Cochran, G. W. et al. | 1989
- 1545
-
Secondary ion mass spectrometry depth profile of CaF2/Si(100)Hopkins, L. C. / Cerullo, M. et al. | 1989
- 1549
-
Photoemission and glancing‐angle extended x‐ray absorption fine‐structure studies of vacuum‐deposited Al/Cu bilayersDi Marzio, D. / Chen, H. / Ruckman, M. W. / Heald, S. M. et al. | 1989
- 1554
-
Characterization of surface oxides and oxide desorption on InGaAsIngrey, S. I. J. / Lau, W. M. / Sodhi, R. N. S. et al. | 1989
- 1558
-
An Auger investigation of the effects of rapid thermal annealing of GaAs on Si with or without intermediate Ge layersOpila, R. L. / Awal, M. A. / Lee, E.‐H. / Lum, R. M. et al. | 1989
- 1563
-
The adsorption of Cs and O2 on a clean GaAs(110) surface under light illuminationGuo, Tailiang et al. | 1989
- 1568
-
Redistribution phenomena in aluminum alloy/titanium thin filmsSlusser, George J. / Ryan, James G. / Shore, Susan E. / Lavoie, Mark A. / Sullivan, Timothy D. et al. | 1989
- 1573
-
Grain boundary diffusion of phosphorous in siliconHolloway, P. H. / Abrantes, T. et al. | 1989
- 1579
-
A mixed Cu–Ni bridge site for CO adsorptionGarfunkel, Eric / Yu, Mingren / Yang, Shu / Feng, Xinghong et al. | 1989
- 1585
-
Effect of some elements and temperature on the surface segregation of boron nitrideMinami, Y. / Tohyama, A. / Yamada, T. et al. | 1989
- 1589
-
Hydrogen isotope exchange via water exposure at oxyhydroxide surfaces of stainless steel and siliconGill, J. T. / Watkins, D. B. / Schultz, J. A. / Anderson, L. R. / Schmidt, H. K. / Bastasz, R. J. et al. | 1989
- 1596
-
The Auger electron, Rutherford backscattering, secondary neutral mass, and secondary ion mass spectroscopies characterization of a W/TiNy/TiSiz/Si barrier structure for use in 1.0‐μm very large scale integrated circuit contactsGrove, C. L. / Gregory, R. B. / Hance, R. L. / Sun, S. W. / Kelly, N. et al. | 1989
- 1601
-
A study of Pd–Ta on Si(100) using Auger electron spectroscopy, Rutherford backscattering spectrometry, and variable energy positron annihilationvan der Kolk, G. J. / Kuiper, A. E. T. / Duchateau, J. P. W. B. / Willemsen, M. / Nielsen, Bent / Lynn, K. G. et al. | 1989
- 1608
-
Structural characterization of multilayer metal phosphonate film on silicon using angular‐dependent x‐ray photoelectron spectroscopyAkhter, S. / Lee, H. / Hong, H.‐G. / Mallouk, T. E. / White, J. M. et al. | 1989
- 1614
-
Chemical effects in the carbon KVV Auger line shapesRamaker, David E. et al. | 1989
- 1623
-
Use of a partial local density of states calculation to characterize the Auger electron Si‐L2,3 VV transitions of thin oxide layersSasse, A. G. B. M. / Wormeester, H. / van der Hoef, M. A. / Keim, E. G. / van Silfhout, A. et al. | 1989
- 1629
-
Photoemission study of uranium compounds with MgAgAs structureHöchst, H. / Tan, K. / Buschow, K. H. J. et al. | 1989
- 1634
-
Auger parameter measurements of phosphorus compounds for characterization of phosphazenesDake, L. S. / Baer, D. R. / Friedrich, D. M. et al. | 1989
- 1639
-
The Versailles Project on Advanced Materials and Standards (VAMAS) project on ion‐implanted reference materials for surface analysis: September 1988Gries, W. H. et al. | 1989
- 1641
-
Influence of ion mixing on the depth resolution of sputter depth profilingCheng, Yang‐Tse / Dow, Audrey A. / Clemens, Bruce M. / Cirlin, Eun‐Hee et al. | 1989
- 1646
-
Determining depth profiles from angle dependent x‐ray photoelectron spectroscopy: The effects of analyzer lens aperture size and geometryTyler, Bonnie J. / Castner, David G. / Ratner, Buddy D. et al. | 1989
- 1655
-
An evaluation of the capabilities of photon and electron spectroscopies for nondestructive quantitative measurements on analyte depth profiles by the angle‐resolved signal ratio methodGries, W. H. et al. | 1989
- 1663
-
Improved quantification and detection limits for oxygen analysis in AlxGa1−x As/GaAs multilayers with secondary ion mass spectroscopyMeuris, M. / Vandervorst, W. / Borghs, G. et al. | 1989
- 1673
-
Ion beam effects on the composition and structure of glass surfacesBrow, R. K. et al. | 1989
- 1677
-
Studies in differential chargingBarr, Tery L. et al. | 1989
- 1684
-
Scanning tunneling microscope equipped with a field ion microscopeSakurai, T. / Hashizume, T. / Kamiya, I. / Hasegawa, Y. / Ide, T. / Miyao, M. / Sumita, I. / Sakai, A. / Hyodo, S. et al. | 1989
- 1689
-
Surface studies of amorphous W75Si25 oxidationChristensen, T. M. et al. | 1989
- 1694
-
Formation of a platinum oxide during the thermal oxidation of noble‐metal alloysGraham, G. W. / Potter, T. J. / Weber, W. H. et al. | 1989
- 1697
-
Sputter deposition of gold in rare‐gas (Ar,Ne)–O2 dischargesKlumb, Arlene M. / Aita, Carolyn Rubin / Tran, Ngoc C. et al. | 1989
- 1702
-
Surface studies of electroless nickel/copper plated polycarbonate subjected to Batelle class II flowing mixed gas environmentIsern‐Flecha, Ileana et al. | 1989
- 1706
-
Characterization of a fast atom source for secondary ion mass spectrometryCorcoran, S. / Parikh, N. / Griffis, D. P. / Linton, R. W. et al. | 1989
- 1712
-
Texturing of polyimide films during O2/CF4 sputter etchingDunn, D. S. / Grant, J. L. / McClure, D. J. et al. | 1989
- 1719
-
Etching of thin SiO2 layers using wet HF gasvan der Heide, P. A. M. / Baan Hofman, M. J. / Ronde, H. J. et al. | 1989
- 1724
-
Alkoxysilane adsorption on metal oxide substratesRamsier, R. D. / Zhuang, G. R. / Henriksen, P. N. et al. | 1989
- 1729
-
Characterization of supported metal oxide particles by variable angle x‐ray photoelectron spectroscopyBerge, Peter ten / Young, Vaneica / Bates, Stanley R. et al. | 1989
- 1733
-
Development of Ti Kα x radiation for electron spectroscopy for chemical analysis of polymer surfacesVargo, Terrence G. / Gardella, Joseph A. et al. | 1989
- 1742
-
Curve fitting of photoemission spectra with physically realistic subspectraNiemantsverdriet, J. W. / Wandelt, K. et al. | 1989
- 1745
-
Laser vaporization mass spectrometry of refractory materials: Graphite and YBa2Cu3OxSchenck, P. K. / Bonnell, D. W. / Hastie, J. W. et al. | 1989
- 1750
-
Laser Raman and laser ablation Fourier transform mass spectroscopy studies of chemically etched polyethyleneSiperko, L. M. / Creasy, W. R. / Brenna, J. T. et al. | 1989
- 1754
-
Laser‐enhanced oxidation of nickelMesarwi, A. / Ignatiev, A. et al. | 1989
- 1758
-
Surface analysis with pulsed‐laser stimulated field desorptionTsong, Tien T. / Liou, Yung / Liu, Jiang et al. | 1989
- 1764
-
Radical formation and surface reaction induced by laser radiation in the CH2I2–Al systemMödl, A. / Domen, K. / Chuang, T. J. et al. | 1989
- 1766
-
Analysis of ion‐bombarded and laser‐irradiated surfaces of ZnS and Zn via two‐photon high‐resolution laser‐induced fluorescence spectroscopyArlinghaus, H. F. / Calaway, W. F. / Young, C. E. / Pellin, M. J. / Gruen, D. M. / Chase, L. L. et al. | 1989
- 1772
-
X‐ray photoelectron spectroscopy and infrared spectroscopy analysis of pyromellitic dianhydride–oxydianiline polyamide‐acid and polyamide‐ester imidizationBuchwalter, L. P. et al. | 1989
- 1778
-
Interfacial reactions at copper surfaces coated with polymer filmsBurrell, M. C. / Codella, P. J. / Fontana, J. A. / Chera, J. J. et al. | 1989
- 1784
-
Interactions of high‐energy ion beams with polyimide filmsMatienzo, L. J. / Emmi, F. / Van Hart, D. C. / Gall, T. P. et al. | 1989
- 1790
-
Time‐of‐flight secondary ion mass spectrometry of polymer materialsvan Leyen, D. / Hagenhoff, B. / Niehuis, E. / Benninghoven, A. / Bletss, I. V. / Hercules, D. M. et al. | 1989
- 1795
-
Interface analysis of monolayer and solution cast films of a polymerizable functionalized diacetylene (B1P51)Hook, Kevin J. / Gardella, Joseph A. et al. | 1989
- 1801
-
Surface chemistry of electrodes: Cu(111) in aqueous HClStickney, John L. / Ehlers, Charles B. et al. | 1989
- 1806
-
Cesium ion transport across a solid electrolyte–porous tungsten interfaceKim, S. I. / Seidl, M. et al. | 1989
- 1810
-
Some applications of microanalytical techniques in very large scale integrated circuits fabricationThomas, Simon et al. | 1989
- 1818
-
Surface characterization of the copper–epoxy adhesion interface from production printed circuit boardsMiller, C. W. / Laberge, P. C. et al. | 1989
- 1823
-
Surface and trace analysis by high‐resolution time‐of‐flight secondary ion mass spectrometryNiehuis, E. / Heller, T. / Jürgens, U. / Benninghoven, A. et al. | 1989
- 1829
-
Positive‐ion emission from the fracture of fused silicaLangford, S. C. / Dickinson, J. T. / Jensen, L. C. / Pederson, L. R. et al. | 1989
- 1837
-
Reactive atom–surface scattering: The adsorption and reaction of atomic oxygen on the Si(100) surfaceEngstrom, J. R. / Nelson, Mark M. / Engel, Thomas et al. | 1989
- 1841
-
Elastic electron fine‐structure investigation of oxygen interaction with the Si(111) surfaceLin, B. Y. / Kahn, A. et al. | 1989
- 1845
-
Reaction kinetics of surface silicon hydridesGreenlief, C. Michael / Gates, Stephen M. / Holbert, Philip A. et al. | 1989
- 1850
-
Infrared‐induced single‐phonon desorption of H2, HD, and D2 from graphite single crystalsCui, Jinhe / Fain, S. C. / Liu, Wei et al. | 1989
- 1851
-
An experimental study of the factors that effect ion desorption yieldsWen, C.‐R. / Rosenberg, R. A. et al. | 1989
- 1854
-
Diffusion measurements on interactive systemsTringides, M. C. et al. | 1989
- 1859
-
Classically exact surface diffusion constants at arbitrary temperatureVoter, Arthur F. / Cohen, Jennifer M. et al. | 1989
- 1863
-
Molecular‐beam studies of the precursor‐mediated dissociative chemisorption of N2 on W(100)Rettner, C. T. / Schweizer, E. K. / Stein, H. / Auerbach, D. J. et al. | 1989
- 1871
-
Rotational dynamics of desorption and inelastic scattering for the NO/Pt(111) systemJacobs, D. C. / Kolasinski, K. W. / Madix, R. J. / Zare, R. N. et al. | 1989
- 1878
-
Energy transfer and photochemistry on a metal surface: Mo(CO)6 on Rh(100)Germer, Thomas A. / Ho, W. et al. | 1989
- 1882
-
Periodic forcing of the oscillatory CO oxidation on Pt single‐crystal surfacesEiswirth, M. / Möller, P. / Ertl, G. et al. | 1989
- 1885
-
Properties of potassium adsorbed on Si(100)2×1Pervan, P. / Michel, E. / Castro, G. R. / Miranda, R. / Wandelt, K. et al. | 1989
- 1889
-
Ferromagnetic order at surfaces of ultrathin Fe(100)/Ag(100) and Tb/Fe(100)/Ag(100) films determined by electron capture spectroscopyRau, C. / Xing, G. et al. | 1989
- 1893
-
Determination of valence states in Fe3O4 by resonant photoemissionLad, Robert J. / Henrich, Victor E. et al. | 1989
- 1898
-
Orientational stability of silicon surfacesBartelt, N. C. / Williams, E. D. / Phaneuf, R. J. / Yang, Y. / Das Sarma, S. et al. | 1989
- 1906
-
In‐plane geometry of the Si(111)‐(√3×√3)Ag surfaceChang, C. S. / Porter, T. L. / Tsong, I. S. T. et al. | 1989
- 1910
-
Structure of the Si(111)/CaF2 interfaceTromp, R. M. / Reuter, M. C. / LeGoues, F. K. / Krakow, W. et al. | 1989
- 1914
-
Steps on Si(001)Griffith, J. E. / Kochanski, G. P. / Kubby, J. A. / Wierenga, P. E. et al. | 1989
- 1919
-
Structure of submonolayers of tin on Si(111) studied by scanning tunneling microscopyNogami, J. / Park, Sang‐il / Quate, C. F. et al. | 1989
- 1922
-
Oxygen induced reconstruction on Cu(100)Wuttig, M. / Franchy, R. / Ibach, H. et al. | 1989
- 1926
-
Determination of the adsorption site of C, N, and O on Ni(100) and Cu(100) using photoelectron diffractionKilcoyne, A. L. D. / Woodruff, D. P. / Lindner, Th. / Somers, J. / Bradshaw, A. M. et al. | 1989
- 1931
-
The first interlayer spacing of Ta(100) determined by photoelectron diffractionBartynski, R. A. / Heskett, D. / Garrison, K. / Watson, G. / Zehner, D. M. / Mei, W. N. / Tong, S. Y. / Pan, X. et al. | 1989
- 1937
-
A He and Ne diffraction study of the W(100) phase transitionSchweizer, E. K. / Rettner, C. T. et al. | 1989
- 1942
-
Interaction of Cu overlayers with W(001) studied by low‐energy alkali ion scatteringOverbury, S. H. / Mullins, D. R. et al. | 1989
- 1949
-
Stimulated desorption of neutral molecules as a real‐time probe of surface kinetics: Methanol adsorption and decomposition on Ni(110)Vajo, J. J. / Campbell, J. H. / Becker, C. H. et al. | 1989
- 1954
-
The interaction of oxygen and platinum on W(110)Demmin, R. A. / Madey, T. E. et al. | 1989
- 1961
-
Adsorption of chlorine on clean and on oxygen preexposed Al(111)Bermudez, V. M. / Glass, A. S. et al. | 1989
- 1967
-
Photoemission study of the interaction of SO2 and H2S with titanium and vanadium oxidesSmith, Kevin E. / Henrich, Victor E. et al. | 1989
- 1972
-
Photodesorption of atoms from metal particles with visible laser lightWeidenauer, R. / Vollmer, M. / Hoheisel, W. / Schulte, U. / Träger, F. et al. | 1989
- 1975
-
Metal cluster formation on GaAs(110): A temperature dependence studyCao, Renyu / Miyano, Ken / Lindau, Ingolf / Spicer, William E. et al. | 1989
- 1983
-
Steady‐state rate of decomposition of formaldehyde on Ru(001)Sun, Y.‐K. / Chan, C.‐Y. / Weinberg, W. H. et al. | 1989
- 1986
-
Ammonia adsorption and decomposition on several faces of platinumGohndrone, J. M. / Olsen, C. W. / Backman, A. L. / Gow, T. R. / Yagasaki, E. / Masel, R. I. et al. | 1989
- 1991
-
Static secondary ion mass spectroscopy study of ethylene and acetylene on Ni: Coverage dependenceZhu, X.‐Y. / Castro, M. E. / Akhter, S. / White, J. M. / Houston, J. E. et al. | 1989
- 1996
-
Adsorption of NO and H,O/NO coadsorption at Ni(110) surfacesSchenk, A. / Hock, M. / Küppers, J. et al. | 1989
- 2001
-
Water on Ni(110): Resolution of monolayer, bilayer, and ice layers by thermal desorption, Δφ, and associated absolute coveragesGriffiths, K. / Memmert, U. / Callen, B. W. / Norton, P. R. et al. | 1989
- 2005
-
An x‐ray photoelectron spectroscopy study of water removal from beryllium at 160 K: Evidence for ion beam induced oxidationLindquist, John M. / George, Patricia M. et al. | 1989
- 2009
-
Carbonate formation and decomposition on KOH/Ag(111)Blass, P. M. / Zhou, X.‐L. / White, J. M. et al. | 1989
- 2013
-
Interaction of alkali‐metal overlayers with oxygenHrbek, J. / Xu, G.‐Q. / Sham, T. K. / Shek, M. L. et al. | 1989
- 2016
-
Growth and electronic structure of Nb and Ta films on Pd and their interaction with COJiang, L. Q. / Ruckman, M. W. / Strongin, Myron et al. | 1989
- 2020
-
Kinetics of CO adsorption on epitaxial (111)Cu on (111)Pd thin filmsOral, B. / Kothari, R. / Vook, R. W. et al. | 1989
- 2024
-
Low‐coverage metal‐induced structural changes in the substrate at metal/InP(110) interfaces determined by photoemission extended x‐ray absorption fine structureChoudhary, K. M. / Mangat, P. S. / Kilday, D. / Margaritondo, G. / Soukiassian, P. / Starnberg, H. I. / Hurych, Z. et al. | 1989
- 2030
-
Surface structure determination of the cleavage faces of CdSe via low‐energy positron diffractionDuke, C. B. / Lessor, D. E. / Horsky, T. N. / Brandes, G. / Canter, K. F. / Lippel, P. H. / Mills, A. P. / Paton, A. / Wang, Y. R. et al. | 1989
- 2035
-
Surface atomic geometry and electronic structure of II–VI cleavage facesDuke, C. B. / Wang, Y. R. et al. | 1989
- 2039
-
Structural studies of (331) GaAs surfaceHorng, S. / Young, K. / Kahn, A. et al. | 1989
- 2044
-
Core‐level shifts on the H2O exposed Ge(100)2×1 surfaceLarsson, C. U. S. / Flodström, A. S. / Karlsson, U. O. / Yang, Y. et al. | 1989
- 2049
-
Full potential linear muffin‐tin orbital study of interface behavior in Ti–C superlatticesPrice, David L. / Cooper, Bernard R. et al. | 1989
- 2054
-
(1×1) rippled relaxation of (100) transition‐metal carbide surfacesGruzalski, G. R. / Zehner, D. M. / Noonan, J. R. / Davis, H. L. / DiDio, R. A. / Müller, K. et al. | 1989
- 2060
-
X‐ray photoelectron forward scattering studies of surface segregation in epitaxial Ni–Cu–Ni(100) sandwich structuresEgelhoff, W. F. et al. | 1989
- 2065
-
Surface electronic behavior of actinide metalsHao, You Gong / Fernando, Gayanath W. / Cooper, Bernard R. et al. | 1989
- 2070
-
The influence of crystallographic order upon the electronic structure of thin mercury overlayersDowben, P. A. / Onellion, M. / Varma, Shikha / Kime, Y. J. / Erskine, J. L. et al. | 1989
- 2075
-
Soft‐x‐ray appearance potential spectroscopy study of Pr2Fe14−xCoxBChourasia, A. R. / Chopra, D. R. / Malik, S. K. et al. | 1989
- 2080
-
Site exchange of atoms across atomically sharp Ag–Au interfacesNiemantsverdriet, J. W. / Markert, K. / Dolle, P. / Wandelt, K. et al. | 1989
- 2083
-
Column 1B metal adsorption on Ge(111): The growth mode of CuHansen, J. C. / Knapp, B. J. / de Souza‐Machado, R. / Wagner, M. K. / Tobin, J. G. et al. | 1989
- 2087
-
Continuous electron stimulated desorption using a ZrO2/Ag permeation membraneOutlaw, R. A. / Hoflund, Gar B. / Davidson, M. R. et al. | 1989
- 2090
-
Electron stimulated desorption of excited neutrals from the surface of solid rare gasArakawa, I. / Takahashi, M. / Takeuchi, K. et al. | 1989
- 2094
-
Surface phonon dispersion curves via thermal energy atom scattering: He atoms on RbCl(001) surfaceChern, G. / Brug, W. P. / Safron, S. A. / Skofronick, J. G. et al. | 1989
- 2099
-
Adsorption and reactions of nitric oxide on Si(111)7×7Ying, Z. / Ho, W. et al. | 1989
- 2104
-
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphologyChabal, Y. J. / Higashi, G. S. / Raghavachari, K. / Burrows, V. A. et al. | 1989
- 2110
-
Infrared internal reflection studies of the surface photochemistry of dimethylcadmium on siliconO’Neill, James A. / Sanchez, Esaul / Osgood, Richard M. et al. | 1989
- 2115
-
The phase diagrams of K and Cs on the Cu(110) surfaceFan, W. C. / Ignatiev, A. et al. | 1989
- 2118
-
Chemisorption studies on Cs/Cu(110): Model studies of cesium promoters on copper‐based catalystsRodriguez, José A. / Clendening, William D. / Campbell, Joseph M. / Min, Wu / Campbell, Charles T. et al. | 1989
- 2121
-
Surface photochemistry. IX. Photochemistry of small molecules on metal surfacesRoop, B. / Zhou, Y. / Liu, Z.‐M. / Henderson, M. A. / Lloyd, K. G. / Campion, A. / White, J. M. et al. | 1989
- 2125
-
A molecular‐beam study of the dissociative chemisorption of O2 on Ir(110)‐(1×2)Mullins, C. B. / Wang, Y. / Weinberg, W. H. et al. | 1989
- 2127
-
Reflection of hydrogen atoms from metal and semiconductor targetsMelnychuk, S. T. / Seidl, M. / Carr, W. / Isenberg, J. / Lopes, J. et al. | 1989
- 2132
-
Energy transfer in the inelastic molecule–surface scatteringShen, Xueying et al. | 1989
- 2138
-
Surface‐stoichiometry dependence of As2 desorption and As4 ‘‘reflection’’ from GaAs(001)Tsao, J. Y. / Brennan, T. M. / Klem, J. F. / Hammons, B. E. et al. | 1989
- 2143
-
Pulsed ion beam investigation of the kinetics of surface reactionsHorton, C. C. / Eck, T. G. / Hoffman, R. W. et al. | 1989
- 2147
-
Surface melting of Pb(110): A compilation of experimental resultsFrenken, J. W. M. et al. | 1989
- 2152
-
D2 on Pd(110): Surface and subsurface phases, absolute coverages, and interconversionMemmert, U. / He, J‐W. / Griffiths, K. / Lennard, W. N. / Norton, P. R. / Richardson, N. V. / Jackman, T. E. / Unertl, W. N. et al. | 1989
- 2155
-
Self‐similar domain growth in a chemisorbed overlayer in the presence of impuritiesZuo, J.‐K. / Wang, G.‐C. et al. | 1989
- 2158
-
New ordered phases and multicriticality of Te/Ni(111): Model calculations and comparisons with experimentThevuthasan, S. / McKay, S. R. / Unertl, W. N. et al. | 1989
- 2162
-
Temperature dependence of metal film growth via low‐energy electron diffraction intensity oscillations: Pt/Pd(100)Flynn, D. K. / Evans, J. W. / Thiel, P. A. et al. | 1989
- 2167
-
The role of adsorbed gases in metal on metal epitaxyEgelhoff, W. F. / Steigerwald, D. A. et al. | 1989
- 2174
-
Ultrathin film growth of silicides studied using microprobe reflection high‐energy electron diffraction and AugerBennett, P. A. / Butler, J. R. / Tong, X. et al. | 1989
- 2180
-
Rate equation modeling of interface widthAumann, C. E. / Kariotis, R. / Lagally, M. G. et al. | 1989
- 2186
-
Low‐energy alkali ion scattering as a probe of resonant charge exchange on cesiated Cu(110)Kimmel, G. A. / Goodstein, D. M. / Cooper, B. H. et al. | 1989
- 2191
-
Coverage dependence of photoemission core levels of alkali‐metal overlayersSham, T. K. / Shek, M.‐L. / Xu, G.‐Q. / Hrbek, J. et al. | 1989
- 2194
-
Dispersion in the loss spectra from Na overlayers on Al(111)Tsuei, K.‐D. / Heskett, D. / Baddorf, A. P. / Plummer, E. W. et al. | 1989
- 2199
-
Symmetry effects in hydrogen chemisorption electronic structureJeong, K. / Gaylord, R. H. / Kevan, S. D. et al. | 1989
- 2203
-
Experimental Fermi surface for W(011)Gaylord, R. H. / Jeong, K. / Dhar, S. / Kevan, S. D. et al. | 1989
- 2207
-
A new method for analysis of reactive adsorbed intermediatesCampbell, Charles T. / Rodriguez, J. A. / Henn, F. C. / Campbell, J. M. et al. | 1989
- 2209
-
X‐ray study of W(001) with and without hydrogenEvans‐Lutterodt, K. / Birgeneau, R. J. / Specht, E. D. / Chung, J. W. / Brock, J. D. / Altman, M. S. / Estrup, P. J. / Robinson, I. K. / MacDowell, A. A. et al. | 1989
- 2217
-
Emission and capture of spin‐polarized electrons during ion reflection at magnetic surfaces: A new tool in surface magnetismRau, C. / Waters, K. et al. | 1989
- 2221
-
Methodology for electron stimulated desorption ion angular distributions of negative ionsJoyce, Stephen A. / Johnson, Allen L. / Madey, Theodore E. et al. | 1989
- 2227
-
CO diffusion on Pt(111) by time‐resolved surface infrared spectroscopyReutt‐Robey, J. E. / Chabal, Y. J. / Doren, D. J. / Christman, S. B. et al. | 1989
- 2235
-
Infrared spectrum from 400 to 1000 cm−1 of PF3 chemisorbed on the Pt(111) surfaceAgrawal, Vijay K. / Trenary, Michael et al. | 1989
- 2238
-
The adsorption and decomposition of formic acid on Ni(111): The identification of formic anhydride by vibrational spectroscopyErley, W. / Sander, D. et al. | 1989
- 2247
-
Temperature dependence of intrinsic stress in Fe, Si, and AlN prepared by ion beam sputteringWindischmann, H. et al. | 1989
- 2252
-
Stress dependence of reactively sputtered aluminum nitride thin films on sputtering parametersHuffman, G. L. / Fahnline, D. E. / Messier, R. / Pilione, L. J. et al. | 1989
- 2256
-
Stress in Y2O3 thin films deposited by radio‐frequency magnetron and ion beam sputteringTustison, R. W. / Varitimos, T. E. / Montanari, D. G. / Wahl, J. M. et al. | 1989
- 2261
-
Influence of conductor steps in passivation stress in magnetic bubble memory devicesUmezaki, H. / Sato, T. / Toyooka, T. / Suzuki, R. et al. | 1989
- 2267
-
A review of the mechanical tests for assessment of thin‐film adhesionSteinmann, P. A. / Hintermann, H. E. et al. | 1989
- 2273
-
An ultrahigh vacuum, low‐energy ion‐assisted deposition system for III–V semiconductor film growthRohde, S. / Barnett, S. A. / Choi, C.‐H. et al. | 1989
- 2280
-
Ion assisted deposition of oxynitrides of aluminum and siliconAl‐Jumaily, G. A. / Mooney, T. A. / Spurgeon, W. A. / Dauplaise, H. M. et al. | 1989
- 2286
-
Metal oxides deposited using ion assisted deposition at low temperatureWilliams, Forrest L. / Reicher, D. W. / Juang, C.‐B. / McNeil, J. R. et al. | 1989
- 2289
-
The angular dependence of preferential sputtering and composition in aluminum–copper thin filmsRudeck, P. J. / Harper, J. M. E. / Fryer, P. M. et al. | 1989
- 2294
-
Diamond and diamondlike films: Deposition processes and propertiesDeshpandey, C. V. / Bunshah, R. F. et al. | 1989
- 2303
-
Mechanical properties (hardness and adhesion) of a‐C:H thin films produced by dual ion beam sputteringScaglione, S. / Emiliani, G. et al. | 1989
- 2307
-
Preparation and properties of diamondlike carbon filmsFranks, J. et al. | 1989
- 2311
-
Influence of exposure to an atmosphere of high relative humidity on tribological properties of diamondlike carbon filmsKokaku, Yuichi / Kitoh, Makoto et al. | 1989
- 2315
-
Graphite formation in diamond film depositionZhu, W. / Randall, C. A. / Badzian, A. R. / Messier, R. et al. | 1989
- 2325
-
Radio‐frequency plasma chemical vapor deposition growth of diamondMeyer, Duane E. / Dillon, Rodney O. / Woollam, John A. et al. | 1989
- 2328
-
Light‐induced defects in hydrogenated amorphous carbon filmsReyes‐Mena, A. / González‐Hernández, J. / Asomoza, R. / Contreras, G. et al. | 1989
- 2332
-
Characterization of as‐prepared and annealed hydrogenated carbon filmsGonzalez‐Hernandez, J. / Chao, B. S. / Pawlik, D. A. et al. | 1989
- 2339
-
Review of ion‐based coating processes derived from the cathodic arcSanders, David M. et al. | 1989
- 2346
-
High‐rate deposition of Al2O3 films using modified cathodic arc plasma deposition processesRandhawa, H. et al. | 1989
- 2350
-
Corrosion‐resistant ion‐plated Al–Zn filmsNowak, W. B. / Burns, L. E. / Harris, V. G. et al. | 1989
- 2355
-
Drift in film thickness uniformity arising from sputtering target recrystallizationHaupt, G. R. / Wickersham, C. E. et al. | 1989
- 2361
-
System level vibration spectra of a low‐vibration cryopump for semiconductor processing equipmentMinta, M. / Stolz, J. et al. | 1989
- 2365
-
Calculation and measurement of the volume flow rate dependence of turbomolecular pumps on the type of gasReich, G. et al. | 1989
- 2369
-
Selection criteria for oil‐free vacuum pumpsDuval, Pierre et al. | 1989
- 2373
-
Cryogenic adsorption of noncondensibles in the high‐vacuum regimeLessard, Philip A. et al. | 1989
- 2377
-
Vibrations in turbomolecular pumps: Spectra and source locationCasaro, F. et al. | 1989
- 2381
-
Dry pumps operating under harsh conditions in the semiconductor industryTroup, A. P. / Turrell, D. et al. | 1989
- 2387
-
Mass flow measurement and control of low vapor pressure sourcesSullivan, J. J. / Schaffer, S. / Jacobs, R. P. et al. | 1989
- 2393
-
Thermocouple gauge for partial pressure measurementsWang, Chi‐Luen / Ghosh, Prasanta K. / Kornreich, Philipp et al. | 1989
- 2397
-
Conductance modulation method for the measurement of the pumping speed and outgassing rate of pumps in ultrahigh vacuumTerada, Keiko / Okano, Tatsuo / Tuzi, Yutaka et al. | 1989
- 2403
-
Recommended procedures for measuring the performance of positive‐displacement mechanical vacuum pumpsKendall, B. R. F. et al. | 1989
- 2408
-
The modeling of standard gas leaksChamberlin, J. L. et al. | 1989
- 2414
-
Fast calibrator for superfine helium leak standards and ion current sensorsBergquist, Lyle E. / Sasaki, Y. Tito et al. | 1989
- 2418
-
Outgassing and desorption of the stainless‐steel beam tubes after different degassing treatmentsHseuh, H. C. / Cui, Xiuhua et al. | 1989
- 2423
-
Gas injection system for the Advanced Toroidal FacilityLangley, R. A. / Halliwell, J. W. / Dyer, G. R. / Yarber, J. L. et al. | 1989
- 2427
-
Design aspects of a differential vacuum pumping systemBridgman, C. / Meyer, E. A. et al. | 1989
- 2430
-
Heavy Ion Storage Ring for Atomic Physics (HISTRAP) vacuum test stand for pressures of 10−12 TorrJohnson, J. W. / Atkins, W. H. / Dowling, D. T. / McConnell, J. W. / Milner, W. T. / Olsen, D. K. et al. | 1989
- 2435
-
High‐vacuum degassing furnace made from aluminum alloy and its thermal characteristicsItoh, K. / Ishigaki, T. / Kamikawana, A. / Ishimaru, H. et al. | 1989
- 2439
-
Ultimate pressure of the order of 10−13 Torr in an aluminum alloy vacuum chamberIshimaru, Hajime et al. | 1989
- 2445
-
Photon‐stimulated desorption as a measure of surface electronic structureYarmoff, J. A. / Joyce, S. A. et al. | 1989
- 2449
-
Study of interface formation on Co/Si(111)‐7×7 using angle‐resolved photoemissionChambliss, David D. / Rhodin, Thor N. / Rowe, J. E. / Shigekawa, H. et al. | 1989
- 2454
-
Photoemission study of the CoSi2(111)–Si surfaceRowe, J. E. / Wertheim, G. K. / Tung, R. T. et al. | 1989
- 2459
-
Low‐temperature Ge heteroepitaxy on GaAs(001)Chambers, S. A. et al. | 1989
- 2464
-
From heterojunctions to Schottky barriersNiles, D. W. / Tang, M. / McKinley, J. / Zanoni, R. / Margaritondo, G. et al. | 1989
- 2466
-
Photoemission study of the band bending and chemistry of sodium sulfide on GaAs(100)Spindt, C. J. / Besser, R. S. / Cao, R. / Miyano, K. / Helms, C. R. / Spicer, W. E. et al. | 1989
- 2469
-
The chemical interaction of Mn with the MoS2(0001) surface studied by high‐resolution photoelectron spectroscopyLince, Jeffrey R. / Stewart, Thomas B. / Fleischauer, Paul D. / Yarmoff, Jory A. / Taleb‐Ibrahimi, Amina et al. | 1989
- 2475
-
Angle‐resolved photoelectron spectroscopy studies of surface alloying in Au/Cu(001)Hansen, J. C. / Tobin, J. G. et al. | 1989
- 2481
-
Roughness and porosity characterization of carbon and magnetic films through adsorption isotherm measurementsWang, C. L. / Krim, J. / Toney, M. F. et al. | 1989
- 2486
-
Cross‐sectional transmission electron microscopy of the interfaces between physical vapor deposited TiNx coatings and steel substratesErdemir, A. / Cheng, C. C et al. | 1989
- 2491
-
Tribological phenomena at the head–disk interface of thin‐film rigid disksTsai, Hsiao‐chu / Mehmandoust, Yassin / Samani, Hamid / Eltoukhy, Atef et al. | 1989
- 2496
-
X‐ray photoelectron spectroscopy studies of enameled steelsPaparazzo, E. / Fierro, G. / Ingo, G. M. / Sturlese, S. et al. | 1989
- 2500
-
Contamination reduction in vacuum processing systemsO’Hanlon, John F. et al. | 1989
- 2504
-
Ultrahigh purity gas distribution systemsHackenberg, John / Spencer, Mark et al. | 1989
- 2508
-
Distribution of dust particles generated from a ball bearing in vacuumMinamigawa, Yasuo / Maeba, Yoshiyasu / Yamakawa, Hiroyuki et al. | 1989
- 2512
-
New electrostatic dust collector for use in vacuum systemsSaeki, H. / Ikeda, J. / Kohzu, I. / Ishimaru, H. et al. | 1989
- 2515
-
Titanium nitridation of metallic surfacesGrieggs, R. J. / Cornelius, W. D. et al. | 1989