Electronic properties of Si-doped AlxN with aluminum mole fractions above 80% (Englisch)
- Neue Suche nach: Mehnke, Frank
- Neue Suche nach: Trinh, Xuan Thang
- Neue Suche nach: Pingel, Harald
- Neue Suche nach: Wernicke, Tim
- Neue Suche nach: Janzén, Erik
- Neue Suche nach: Son, Nguyen Tien
- Neue Suche nach: Kneissl, Michael
- Neue Suche nach: Mehnke, Frank
- Neue Suche nach: Trinh, Xuan Thang
- Neue Suche nach: Pingel, Harald
- Neue Suche nach: Wernicke, Tim
- Neue Suche nach: Janzén, Erik
- Neue Suche nach: Son, Nguyen Tien
- Neue Suche nach: Kneissl, Michael
In:
Journal of Applied Physics
;
120
, 14
;
10
;
2016
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Electronic properties of Si-doped AlxN with aluminum mole fractions above 80%
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Beteiligte:Mehnke, Frank ( Autor:in ) / Trinh, Xuan Thang ( Autor:in ) / Pingel, Harald ( Autor:in ) / Wernicke, Tim ( Autor:in ) / Janzén, Erik ( Autor:in ) / Son, Nguyen Tien ( Autor:in ) / Kneissl, Michael ( Autor:in )
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Erschienen in:Journal of Applied Physics ; 120, 14 ; 10
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Verlag:
- Neue Suche nach: AIP Publishing LLC
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Erscheinungsdatum:14.10.2016
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Format / Umfang:10 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 120, Ausgabe 14
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