Determination of critical layer thicknesses in IV‐IV‐alloy systems using reflection high energy electron diffraction intensity oscillations: Ge(100)/GexSn1−x (Englisch)
Nationallizenz
- Neue Suche nach: Gossmann, H.‐J.
- Neue Suche nach: Gossmann, H.‐J.
In:
Journal of Applied Physics
;
68
, 6
;
2791-2795
;
1990
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Determination of critical layer thicknesses in IV‐IV‐alloy systems using reflection high energy electron diffraction intensity oscillations: Ge(100)/GexSn1−x
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Beteiligte:Gossmann, H.‐J. ( Autor:in )
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Erschienen in:Journal of Applied Physics ; 68, 6 ; 2791-2795
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Verlag:
- Neue Suche nach: American Institute of Physics
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Erscheinungsdatum:15.09.1990
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 68, Ausgabe 6
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