Impurity Bands and Electroluminescence in SiC p‐n Junctions (Englisch)
Nationallizenz
- Neue Suche nach: Patrick, Lyle
- Neue Suche nach: Choyke, W. J.
- Neue Suche nach: Patrick, Lyle
- Neue Suche nach: Choyke, W. J.
In:
Journal of Applied Physics
;
30
, 2
;
236-248
;
1959
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Impurity Bands and Electroluminescence in SiC p‐n Junctions
-
Beteiligte:Patrick, Lyle ( Autor:in ) / Choyke, W. J. ( Autor:in )
-
Erschienen in:Journal of Applied Physics ; 30, 2 ; 236-248
-
Verlag:
- Neue Suche nach: American Institute of Physics
-
Erscheinungsdatum:01.02.1959
-
ISSN:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Elektronische Ressource
-
Sprache:Englisch
-
Datenquelle:
Inhaltsverzeichnis – Band 30, Ausgabe 2
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 129
-
Dislocation Velocities, Dislocation Densities, and Plastic Flow in Lithium Fluoride CrystalsJohnston, W. G. / Gilman, J. J. et al. | 1959
- 144
-
Photoconductivity as a Function of Optical AbsorptionGoodman, Alvin M. et al. | 1959
- 148
-
High‐Temperature Mechanical Properties of Graphite. I. Creep in CompressionWagner, Paul / Driesner, Allen R. et al. | 1959
- 152
-
High‐Temperature Properties of Graphite. II. Creep in TensionWagner, Paul / Driesner, Allen R. / Haskin, Larry A. et al. | 1959
- 155
-
High‐Voltage Photovoltaic EffectGoldstein, B. / Pensak, L. et al. | 1959
- 161
-
Space Charge Neutralization by Positive Ions in DiodesAuer, P. L. / Hurwitz, H. et al. | 1959
- 166
-
T‐F Theory of Electron Emission in High‐Current ArcsLee, T. H. et al. | 1959
- 172
-
Accurate Determination of the Capacitance of Rectangular Parallel‐Plate CapacitorsReitan, Daniel Kinseth et al. | 1959
- 176
-
Vaporization‐Crystallization Method for Growing CdS Single CrystalsBoyd, D. R. / Sihvonen, Y. T. et al. | 1959
- 180
-
Effects of Carrier Injection on the Recombination Velocity in Semiconductor SurfacesDousmanis, George C. et al. | 1959
- 185
-
Low‐Energy X‐Ray Attenuation Measurements for Elements of Low Atomic NumberHopkins, John I. et al. | 1959
- 188
-
Hydromagnetic CapacitorAnderson, Oscar / Baker, William R. / Bratenahl, Alexander / Furth, Harold P. / Kunkel, Wulf B. et al. | 1959
- 196
-
Propagation of Plastic Waves in SolidsBell, James F. et al. | 1959
- 202
-
Domain Wall Motion and Ferrimagnetic Resonance in a Manganese FerriteDillon, J. F. / Earl, H. E. et al. | 1959
- 214
-
Compression and the α‐β Phase Transition of PlutoniumBridgman, P. W. et al. | 1959
- 217
-
Domain Behavior in Some Transparent Magnetic OxidesSherwood, R. C. / Remeika, J. P. / Williams, H. J. et al. | 1959
- 226
-
Investigation of an Alloy Surface with the Field Emission MicroscopeBradley, R. C. / D'Asaro, L. A. et al. | 1959
- 234
-
Dislocation Etch Pits in BismuthLovell, L. C. / Wernick, J. H. et al. | 1959
- 236
-
Impurity Bands and Electroluminescence in SiC p‐n JunctionsPatrick, Lyle / Choyke, W. J. et al. | 1959
- 249
-
Correlation of Secondary X‐Ray IntensitiesBanerjee, Bani R. et al. | 1959
- 252
-
Internal Friction of Copper and Copper AlloysBeshers, Daniel N. et al. | 1959
- 259
-
Diffusion of Impurities into Evaporating SiliconBatdorf, R. L. / Smits, F. M. et al. | 1959
- 265
-
Radiation Damping Effects in Two Level Maser OscillatorsYariv, A. / Singer, J. R. / Kemp, J. et al. | 1959
- 266
-
Strength of Gold WhiskersBrenner, S. S. et al. | 1959
- 267
-
Light Induced Plasticity in GermaniumKuczynski, G. C. / Hochman, R. H. et al. | 1959
- 268
-
Narrowing the Energy Gap in Semiconductors by CompensationStern, Frank / Dixon, Jack R. et al. | 1959
- 269
-
Effect of γ‐Ray and Pile Irradiation on the Coercive Field of BaTiO3Lefkowitz, Issai / Mitsui, Toshio et al. | 1959
- 270
-
Note on R. R. Newton's Paper, ``Motion of a Satellite around an Unsymmetrical Central Body''Sterne, Theodore E. et al. | 1959