SiO2 planarization technology with biasing and electron cyclotron resonance plasma deposition for submicron interconnections (Englisch)
- Neue Suche nach: Machida, Katsuyuki
- Neue Suche nach: Oikawa, Hideo
- Neue Suche nach: Machida, Katsuyuki
- Neue Suche nach: Oikawa, Hideo
In:
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
;
4
, 4
;
818-821
;
1986
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:SiO2 planarization technology with biasing and electron cyclotron resonance plasma deposition for submicron interconnections
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Weitere Titelangaben:SiO2 planarization technology
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Beteiligte:Machida, Katsuyuki ( Autor:in ) / Oikawa, Hideo ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.07.1986
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Format / Umfang:4 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 4, Ausgabe 4
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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- 939
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- 955
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Photoemission study of the reactive Pd/InP(110) interfaceKendelewicz, T. / List, R. S. / Bertness, K. A. / Williams, M. D. / Lindau, I. / Spicer, W. E. et al. | 1986
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- 1055
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- 1060
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Tight‐binding theory of heterojunction band lineups and interface dipolesHarrison, W. A. / Tersoff, J. et al. | 1986
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- 1091
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- 1095
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- 1115
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- 1121
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- 1123
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Initial formation of the interface between a polar insulator and a nonpolar semiconductor: CaF2 on Si(111)Olmstead, Marjorie A. / Uhrberg, R. I. G. / Bringans, R. D. / Bachrach, R. Z. et al. | 1986
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