Nitrogen plasma source ion implantation of aluminum (Englisch)
- Neue Suche nach: Walter, K. C.
- Neue Suche nach: Walter, K. C.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
;
12
, 2
;
945-950
;
1994
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Nitrogen plasma source ion implantation of aluminum
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Weitere Titelangaben:Nitrogen PSII
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Beteiligte:Walter, K. C. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.03.1994
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Format / Umfang:6 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 12, Ausgabe 2
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- 1153
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Gas source molecular beam epitaxy growth of ZnSe on novel buffer layersLu, K. / Fisher, P. A. / House, J. L. / Ho, E. / Coronado, C. A. / Petrich, G. S. / Kolodziejski, L. A. / Hua, G.‐C. / Otsuka, N. et al. | 1994
- 1156
-
Time‐of‐flight measurement of carrier transport and carrier collection in strained Si1−xGex/Si quantum wellsFukatsu, S. / Fujiwara, A. / Muraki, K. / Takahashi, Y. / Shiraki, Y. et al. | 1994
- 1160
-
Room temperature photoluminescence in strained Si1−xGex/Si quantum wellsFukatsu, S. / Sunamura, H. / Shiraki, Y. et al. | 1994
- 1163
-
Novel integration of a group IV electron‐beam deposition capability with a III–V molecular beam epitaxy system*Lee, H. P. / Szalkowski, F. J. / Sato, D. L. / Liu, X. / Ranalli, E. / George, T. et al. | 1994
- 1167
-
Study of interaction between incident silicon and germanium fluxes and SiO2 layer using solid‐source molecular beam epitaxyYun, Sun Jin / Lee, Seung‐Chang / Kim, Bo‐Woo / Kang, Sang‐Won et al. | 1994
- 1170
-
Atomic layer‐by‐layer epitaxy of cuprate superconductorsBozovic, I. / Eckstein, J. N. / Virshup, G. F. et al. | 1994
- 1174
-
Growth morphologies of (001), (100), and (010) oriented Er5Ba7Cu12Oy high‐temperature superconductor thin films on various substratesChoudhary, K. M. / Seshadri, P. / Black, M. et al. | 1994
- 1178
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Effects of oxygen on the sublimation of alkaline earths from effusion cellsHellman, E. S. / Hartford, E. H. et al. | 1994
- 1181
-
Atomically controlled growth of GaAs/NiAl/GaAs structures by molecular‐beam epitaxyHirono, S. / Tanimoto, M. / Inoue, N. et al. | 1994
- 1184
-
Stabilized α‐Sn grown at high temperature by molecular beam epitaxyKimata, M. / Suzuki, T. / Saino, K. / Kawamura, K. / Hobbs, A. et al. | 1994
- 1186
-
Growth of group III nitrides on Si(111) by plasma‐assisted molecular beam epitaxyStevens, K. S. / Ohtani, A. / Schwartzman, A. F. / Beresford, R. et al. | 1994
- 1190
-
Carbon p+ doping of molecular‐beam epitaxial GaAs films using carbon tetrabromideLemonias, P. J. / Hoke, W. E. / Weir, D. G. / Hendriks, H. T. et al. | 1994
- 1193
-
Carbon doping of InGaAs in solid‐source molecular beam epitaxy using carbon tetrabromideHwang, Wen‐Yen / Miller, D. L. / Chen, Y. K. / Humphrey, D. A. et al. | 1994
- 1197
-
Some doping results in ZnSe grown by molecular beam epitaxyLi, L. K. / Wang, W. I. / Gaines, J. M. / Petruzzello, J. / Marshall, T. et al. | 1994
- 1200
-
Carbon doping by a compact electron beam sourceVan Hove, J. M. / Chow, P. P. / Rosamond, M. F. / Carpenter, G. L. / Chow, L. A. et al. | 1994
- 1203
-
Boron delta doping in Si and SiGe and its application toward field‐effect transistor devicesCarns, T. K. / Zheng, X. / Wang, K. L. / Wu, S. L. / Wang, S. J. et al. | 1994
- 1207
-
Pyrometric interferometry for real time molecular beam epitaxy process monitoringBöbel, F. G. / Möller, H. / Wowchak, A. / Hertl, B. / Van Hove, J. / Chow, L. A. / Chow, P. P. et al. | 1994
- 1211
-
Determination of molecular beam epitaxial growth parameters by ellipsometryDroopad, R. / Kuo, C. H. / Anand, S. / Choi, K. Y. / Maracas, G. N. et al. | 1994
- 1214
-
Measurement of GaAs temperature‐dependent optical constants by spectroscopic ellipsometryKuo, C. H. / Anand, S. / Droopad, R. / Choi, K. Y. / Maracas, G. N. et al. | 1994
- 1217
-
Dual beam atomic absorption spectroscopy for controlling thin film deposition ratesBenerofe, S. J / Ahn, C. H. / Wang, M. M. / Kihlstrom, K. E. / Do, K. B. / Arnason, S. B. / Fejer, M. M. / Geballe, T. H. / Beasley, M. R. / Hammond, R. H. et al. | 1994
- 1221
-
In situ thickness monitoring and control for highly reproducible growth of distributed Bragg reflectorsHoung, Y. M. / Tan, M. R. T. / Liang, B. W. / Wang, S. Y. / Mars, D. E. et al. | 1994
- 1225
-
Factors affecting the temperature uniformity of semiconductor substrates in molecular‐beam epitaxyJohnson, S. R. / Lavoie, C. / Nodwell, E. / Nissen, M. K. / Tiedje, T. / Mackenzie, J. A. et al. | 1994
- 1229
-
Efficient liquid nitrogen supply system for the cooling shroud in a molecular beam epitaxy systemCook, J. W. / Schetzina, J. F. et al. | 1994
- 1232
-
Atomic nitrogen production in a molecular‐beam epitaxy compatible electron cyclotron resonance plasma sourceVaudo, R. P. / Cook, J. W. / Schetzina, J. F. et al. | 1994
- 1236
-
Reflection high‐energy electron diffraction intensity oscillations during molecular‐beam epitaxy on rotating substratesvan der Wagt, Jan P. A. / Harris, James S. et al. | 1994
- 1239
-
Molecular beam epitaxial growth and properties of Si‐doped GaAs/AlGaAs quantum wellsAsom, M. T. / Livescu, G. / Swaminathan, V. / Geva, M. / Luther, L. et al. | 1994
- 1242
-
Electrical and optical properties of heavily n‐doped GaSb–AlSb multiquantum well structures for infrared photodetector applicationsBrar, Berinder / Samoska, Lorene / Kroemer, Herbert / English, John H. et al. | 1994
- 1246
-
Growth of GaAs light modulators on Si by gas source molecular‐beam epitaxy for 850 nm optical interconnectsCunningham, J. E. / Goossen, K. W. / Walker, J. A. / Jan, W. / Santos, M. / Miller, D. A. B. et al. | 1994
- 1251
-
Chemical beam epitaxy of InP‐based solar cells and tunnel junctionsVilela, M. F. / Rossignol, V. / Bensaoula, A. / Medelci, N. / Freundlich, A. et al. | 1994
- 1254
-
Molecular beam epitaxy growth of pseudomorphic II–VI multilayered structures for blue/green laser diodes and light‐emitting diodesHan, J. / He, L. / Grillo, D. C. / Clark, S. M. / Gunshor, R. L. / Jeon, H. / Salokatve, A. / Nurmikko, A. V. / Hua, G. C. / Otsuka, N. et al. | 1994
- 1258
-
Buried heterostructure laser diodes fabricated using in situ processingHong, M. / Vakhshoori, D. / Grober, L. H. / Mannaerts, J. P. / Asom, M. T. / Wynn, J. D. / Thiel, F. A. / Freund, R. S. et al. | 1994
- 1262
-
Blue/green ZnSe–ZnCdSe light‐emitting diodes and photopumped laser structures grown by molecular beam epitaxy on ZnSe substratesRen, J. / Eason, D. B. / Yu, Z. / Sneed, B. / Cook, J. W. / Schetzina, J. F. / El‐Masry, N. A. / Yang, X. H. / Song, J. J. / Cantwell, Gene et al. | 1994
- 1266
-
Molecular‐beam epitaxy growth of high‐performance midinfrared diode lasersTurner, G. W. / Choi, H. K. / Calawa, D. R. / Pantano, J. V. / Chludzinski, J. W. et al. | 1994
- 1269
-
Photocontrolled double‐barrier resonant‐tunneling diodeLi, H. S. / Chen, Y. W. / Wang, K. L. / Pan, D. S. / Chen, L. P. / Liu, J. M. et al. | 1994
- 1273
-
Studies of Si segregation in GaAs using current–voltage characteristics of quantum well infrared photodetectorsWasilewski, Z. R. / Liu, H. C. / Buchanan, M. et al. | 1994
- 1277
-
One‐dimensional wire formed by molecular‐beam epitaxial regrowth on a patterned pnpnp GaAs substrateBurroughes, J. H. / Grimshaw, M. P. / Leadbeater, M. L. / Ritchie, D. A. / Pepper, M. / Jones, G. A. C. et al. | 1994
- 1280
-
High‐quality strained quantum wires grown by molecular beam epitaxy on (100) GaAs substrateChen, Y.‐P. / Reed, J. D. / Schaff, W. J. / Eastman, L. F. et al. | 1994
- 1283
-
Current‐controlled negative differential resistance in InAs/AlxGa1−xSb tunnel structuresChow, D. H. / Schulman, J. N. et al. | 1994
- 1286
-
50 nm GaAs/AlAs wire structures grown on corrugated GaAsMiller, David J. / Harris, James S. et al. | 1994
- 1290
-
Effect of the proximity of an ex situ patterned interface on the quality of two‐dimensional electron gases at GaAs/AlGaAs heterojunctionsGrimshaw, M. P. / Ritchie, D. A. / Burroughs, J. H. / Jones, G. A. C. et al. | 1994
- 1293
-
Fabrication of independent contacts to two closely spaced two‐dimensional electron gases using molecular beam epitaxy regrowth and in situ focused ion beam lithographyBrown, K. M. / Linfield, E. H. / Ritchie, D. A. / Jones, G. A. C. / Grimshaw, M. P. / Churchill, A. C. et al. | 1994
- 1296
-
Optimization of high mobility two‐dimensional hole gasesSimmons, M. Y. / Ritchie, D. A. / Zailer, I. / Churchill, A. C. / Jones, G. A. C. et al. | 1994
- 1300
-
AlGaAs/Ge/GaAs heterostructures grown by molecular beam epitaxyWang, Y. / Baruch, N. / Wang, W. I. / Cheney, M. E. / Huang, C. I. / Scherer, R. L. et al. | 1994
- 1303
-
Observation of quantum mechanical reflections of electrons at an in situ grown GaAs/aluminum Schottky barrierWeckwerth, M. V. / van der Wagt, Jan P. A. / Harris, James S. et al. | 1994
- 1306
-
Modulation‐doped InAlAs/InGaAs quantum well structures for high electron mobility transistorsKlein, W. / Böhm, G. / Sexl, M. / Grigull, S. / Heiss, H. / Tränkle, G. / Weimann, G. et al. | 1994
- 1309
-
Double quantum well charge transport in pseudomorphic Al0.3Ga0.7As/In0.15Ga0.85As/GaAs modulation doped heterostructuresYoung, A. P. / Fernandez, J. M. / Chen, Jianhui / Wieder, H. H. et al. | 1994