Organic electroluminescent devices with improved stability (Englisch)
Nationallizenz
- Neue Suche nach: Van Slyke, S. A.
- Neue Suche nach: Chen, C. H.
- Neue Suche nach: Tang, C. W.
- Neue Suche nach: Van Slyke, S. A.
- Neue Suche nach: Chen, C. H.
- Neue Suche nach: Tang, C. W.
In:
Applied Physics Letters
;
69
, 15
;
2160-2162
;
1996
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Organic electroluminescent devices with improved stability
-
Beteiligte:
-
Erschienen in:Applied Physics Letters ; 69, 15 ; 2160-2162
-
Verlag:
- Neue Suche nach: American Institute of Physics
-
Erscheinungsdatum:07.10.1996
-
ISSN:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Elektronische Ressource
-
Sprache:Englisch
-
Datenquelle:
Inhaltsverzeichnis – Band 69, Ausgabe 15
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 2151
-
Single‐sided output Sn/Er/Yb distributed feedback fiber laserLoh, W. H. / Dong, L. / Caplen, J. E. et al. | 1996
- 2154
-
Second‐harmonic generation using a fiber ring resonator with a LiNbO3 waveguide and a semiconductor optical amplifierXu, C. Q. / Shinozaki, K. / Okayama, H. / Kamijoh, T. et al. | 1996
- 2157
-
Mechanisms of carrier and energy injection in three‐terminal laser structuresTolstikhin, Valery I. / Khrenov, Gregory Yu. et al. | 1996
- 2160
-
Organic electroluminescent devices with improved stabilityVan Slyke, S. A. / Chen, C. H. / Tang, C. W. et al. | 1996
- 2163
-
Movable‐mask reactive ion etch process for thickness control in devicesSandstrom, R. L. / Pezeshki, B. / Agahi, F. / Martel, R. / Crockett, J. G. et al. | 1996
- 2166
-
Time‐resolved picosecond optical nonlinearity and all‐optical Kerr gate in poly (3‐hexadecylthiophene)Gomes, A. S. L. / Demenicis, Luciene / Petrov, D. V. / de Arau´jo, Cid B. / de Melo, Celso P. / Souto‐Maior, Rosa et al. | 1996
- 2169
-
Splitting of the first generalized Rayleigh mode in thin layers deposited on anisotropic mediaMourad, Andre´ / Desmet, Carl / Thoen, Jan et al. | 1996
- 2172
-
Target atomic number effect on the duration and conversion efficiency of ultrashort x‐ray pulsesPelletier, J. F. / Chaker, M. / Kieffer, J. C. et al. | 1996
- 2175
-
A proposed high‐gradient laser‐driven electron accelerator using crossed cylindrical laser focusingHuang, Y. C. / Byer, R. L. et al. | 1996
- 2178
-
Effect of reactive ion etching–generated sidewall roughness on propagation loss of buried‐channel silica waveguidesBazylenko, M. V. / Gross, M. / Faith, M. et al. | 1996
- 2181
-
Growth of adherent diamond films on optically transparent sapphire substratesSingh, Rajiv K. / Gilbert, D. R. / Laveigne, J. et al. | 1996
- 2184
-
Effect of cyclic process on the {100}‐oriented texture growth of diamond filmKim, S. H. / Park, Y. S. / Han, I. T. / Lee, J.‐W. / Yun, W. S. et al. | 1996
- 2187
-
Substrate dependence in the growth of epitaxial Pb1−xLaxTiO3 thin filmsKim, Y. / Erbil, A. / Boatner, L. A. et al. | 1996
- 2190
-
Infrared absorption in silicon at elevated temperaturesRogne, H. / Timans, P. J. / Ahmed, H. et al. | 1996
- 2193
-
Preparation of BaTiO3 thin films by backside pulsed ion‐beam evaporationSonegawa, T. / Grigoriu, C. / Masugata, K. / Yatsui, K. / Shimotori, Y. / Furuuchi, S. / Yamamoto, H. et al. | 1996
- 2196
-
Detection of hot electron current with scanning hot electron microscopyVa´zquez, F. / Kobayashi, D. / Kobayashi, I. / Miyamoto, Y. / Furuya, K. / Maruyama, T. / Watanabe, M. / Asada, M. et al. | 1996
- 2199
-
Time‐resolved optical waveguide spectroscopy: Application to a study of the switching process of a nematic liquid crystal under the influence of an electric fieldMitsuishi, M. / Ito, S. / Yamamoto, M. / Knoll, W. et al. | 1996
- 2202
-
Determination of the oxide‐precipitate–silicon‐matrix interface energy by considering the change of precipitate morphologySenkader, S. / Hobler, G. / Schmeiser, C. et al. | 1996
- 2205
-
Pressure induced structural transitions in nanometer size particles of PbSQadri, S. B. / Yang, J. / Ratna, B. R. / Skelton, E. F. / Hu, J. Z. et al. | 1996
- 2208
-
Ti/MgO superlattices epitaxially grown on sapphire (00.1) and MgO(001) substratesKado, Tetsuo et al. | 1996
- 2211
-
A field‐sensitive photoconductive probe for sampling through passivation layersHwang, Jiunn‐Ren / Lai, Richard K. / Nees, John / Norris, Ted / Whitaker, John F. et al. | 1996
- 2214
-
Oxynitride films formed by low energy NO+ implantation into siliconDiniz, J. A. / Tatsch, P. J. / Pudenzi, M. A. A. et al. | 1996
- 2216
-
Time‐resolved measurements of the photoluminescence of Cu‐quenched porous siliconRigakis, N. / Yamani, Z. / AbuHassan, L. H. / Hilliard, J. / Nayfeh, M. H. et al. | 1996
- 2219
-
Electron velocity saturation in quantized silicon carbide inversion layersGa´miz, F. / Rolda´n, J. B. / Lo´pez‐Villanueva, J. A. / Carceller, J. E. et al. | 1996
- 2222
-
Nanometer‐scale local oxidation of silicon using silicon nitride islands formed in the early stages of nitridationTabe, Michiharu / Yamamoto, Takeshi et al. | 1996
- 2225
-
Tunable polarization converter based on ordered AlGaInP waveguide structuresWirth, R. / Moritz, A. / Geng, C. / Scholz, F. / Hangleiter, A. et al. | 1996
- 2228
-
Role of silicon surface in the removal of point defects in ultrashallow junctionsSultan, A. / Banerjee, S. / List, S. / Rodder, M. et al. | 1996
- 2231
-
Improved thin films of pentacene via pulsed laser deposition at elevated substrate temperaturesSalih, A. J. / Lau, S. P. / Marshall, J. M. / Maud, J. M. / Bowen, W. R. / Hilal, N. / Lovitt, R. W. / Williams, P. M. et al. | 1996
- 2234
-
Back‐gating effect of low‐temperature GaAs on a pseudomorphic modulation‐doped field‐effect transistorFolkes, P. A. / Smith, Doran / Lux, R. A. / Zhou, W. / Thompson, R. / Moerkirk, R. / Lemeune, M. / Cooke, P. / Brown, K. et al. | 1996
- 2237
-
Structural and optical properties of strained (Ga,In)Sb/GaSb quantum wells grown by molecular‐beam epitaxyBertru, N. / Klann, R. / Mazuelas, A. / Brandt, O. / Ploog, K. H. / Gaillard, S. et al. | 1996
- 2240
-
Four‐wave mixing in bulk GaAs microcavities at room temperatureBuhleier, R. / Bardinal, V. / Collet, J. H. / Fontaine, C. / Hu¨bner, M. / Kuhl, J. et al. | 1996
- 2243
-
Nonlinear optical mapping of silicon carbide polytypes in 6H‐SiC epilayersMeyer, C. / Lu¨pke, G. / Stein von Kamienski, E. / Go¨lz, A. / Kurz, H. et al. | 1996
- 2246
-
Enhancement of the light‐to‐current conversion efficiency in an n‐SiC/solution diode by porous etchingvan de Lagemaat, J. / Plakman, M. / Vanmaekelbergh, D. / Kelly, J. J. et al. | 1996
- 2249
-
Investigations of the structural stability of highly strained [(Al)GaIn]As/Ga (PAs) multiple quantum wellsMarschner, T. / Lutgen, S. / Volk, M. / Stolz, W. / Go¨bel, E. O. et al. | 1996
- 2252
-
Hole traps in oxide layers thermally grown on SiCAfanas’ev, V. V. / Stesmans, A. et al. | 1996
- 2255
-
Solid‐phase epitaxial growth of amorphized GaAs: The influence of microscopic nonstoichiometryBelay, K. B. / Llewellyn, D. J. / Ridgway, M. C. et al. | 1996
- 2258
-
Textured diamond growth by low pressure flat flame chemical vapor depositionWolden, C. A. / Sitar, Z. / Davis, R. F. / Prater, J. T. et al. | 1996
- 2261
-
Exciton dynamics in a novel high‐yield GaInP quantum‐wire arrayDua, P. / Cooper, S. L. / Chen, A. C. / Cheng, K. Y. et al. | 1996
- 2264
-
SiC rapid thermal carbonization of the (111)Si semiconductor‐on‐insulator structure and subsequent metalorganic chemical vapor deposition of GaNSteckl, A. J. / Devrajan, J. / Tran, C. / Stall, R. A. et al. | 1996
- 2267
-
Electroluminescent device based on silicon nanopillarsNassiopoulos, A. G. / Grigoropoulos, S. / Papadimitriou, D. et al. | 1996
- 2270
-
Charge injection in organic light‐emitting diodes: Tunneling into low mobility materialsDavids, P. S. / Kogan, Sh. M. / Parker, I. D. / Smith, D. L. et al. | 1996
- 2273
-
Spectroellipsometry for characterization of Zn1−xCdxSe multilayered structures on GaAsLee, Joungchel / Collins, R. W. / Heyd, A. R. / Flack, F. / Samarth, N. et al. | 1996
- 2276
-
Interface states at ultrathin oxide/Si(111) interfaces obtained from x‐ray photoelectron spectroscopy measurements under biasesKobayashi, H. / Yamashita, Y. / Nakato, Y. / Komeda, T. / Nishioka, Y. et al. | 1996
- 2279
-
Inhibition of thickness variations during growth of InAsP/InGaP and InAsP/InGaAsP multiquantum wells with high compensated strainsPatriarche, G. / Ougazzaden, A. / Glas, F. et al. | 1996
- 2282
-
A sulfur passivation for GaAs surface by an organic molecular, CH3CSNH2 treatmentLu, E. D. / Zhang, F. P. / Xu, S. H. / Yu, X. J. / Xu, P. S. / Han, Z. F. / Xu, F. Q. / Zhang, X. Y. et al. | 1996
- 2285
-
Ferromagnetic artificial pinning centers in superconducting Nb0.36Ti0.64 wiresRizzo, N. D. / Wang, J. Q. / Prober, D. E. / Motowidlo, L. R. / Zeitlin, B. A. et al. | 1996
- 2288
-
YBa2Cu3O7−δ/NdBa2Cu3O7−δ/YBa2Cu3O7−δ edge junctions and SQUIDSOh, B. / Choi, Y. H. / Moon, S. H. / Kim, H. T. / Min, B. C. et al. | 1996
- 2288
-
YBa2Cu3O7 - d-NdBa2Cu3O7 - d)-YBa2Cu3O7 - d edge junctions and SQUIDSOh, B. et al. | 1996
- 2291
-
Spin‐dependent tunneling in HfO2 tunnel junctionsPlatt, C. L. / Dieny, B. / Berkowitz, A. E. et al. | 1996
- 2294
-
The capacitive origin of the picosecond electrical transients detected by a photoconductively gated scanning tunneling microscopeGroeneveld, R. H. M. / van Kempen, H. et al. | 1996
- 2297
-
Addendum:‘‘Ion beam synthesis and stability of GaAs nanocrystals in silicon’’ [Appl. Phys. Lett. 68, 2389 (1996)]White, C. W. / Budai, J. D. / Zhu, J. G. / Withrow, S. P. / Aziz, M. J. et al. | 1996
- 2298
-
Erratum:‘‘Laser‐plasma interaction during visible‐laser ablation of methods’’ [Appl. Phys. Lett. 69, 473 (1996)]Chang, Jim J. / Warnor, Bruce E. et al. | 1996
- 2299
-
CUMULATIVE AUTHOR INDEX| 1996