Reactive ion etching of GaAs through wafer via holes using Cl2 and SiCl4 gases: A comprehensive statistical approach (Englisch)
- Neue Suche nach: Camacho, A.
- Neue Suche nach: Morgan, D. V.
- Neue Suche nach: Camacho, A.
- Neue Suche nach: Morgan, D. V.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
;
12
, 5
;
2933-2940
;
1994
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Reactive ion etching of GaAs through wafer via holes using Cl2 and SiCl4 gases: A comprehensive statistical approach
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Weitere Titelangaben:RIE of GaAs through wafer
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Beteiligte:Camacho, A. ( Autor:in ) / Morgan, D. V. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.09.1994
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Format / Umfang:8 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 12, Ausgabe 5
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