Correlating growth conditions with photoluminescence and lasing properties of mid-IR antimonide type II “W” structures (Englisch)
- Neue Suche nach: Canedy, C. L.
- Neue Suche nach: Boishin, G. I.
- Neue Suche nach: Bewley, W. W.
- Neue Suche nach: Kim, C. S.
- Neue Suche nach: Vurgaftman, I.
- Neue Suche nach: Kim, M.
- Neue Suche nach: Lindle, J. R.
- Neue Suche nach: Meyer, J. R.
- Neue Suche nach: Whitman, L. J.
- Neue Suche nach: Canedy, C. L.
- Neue Suche nach: Boishin, G. I.
- Neue Suche nach: Bewley, W. W.
- Neue Suche nach: Kim, C. S.
- Neue Suche nach: Vurgaftman, I.
- Neue Suche nach: Kim, M.
- Neue Suche nach: Lindle, J. R.
- Neue Suche nach: Meyer, J. R.
- Neue Suche nach: Whitman, L. J.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
;
22
, 3
;
1575-1579
;
2004
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Correlating growth conditions with photoluminescence and lasing properties of mid-IR antimonide type II “W” structures
-
Beteiligte:Canedy, C. L. ( Autor:in ) / Boishin, G. I. ( Autor:in ) / Bewley, W. W. ( Autor:in ) / Kim, C. S. ( Autor:in ) / Vurgaftman, I. ( Autor:in ) / Kim, M. ( Autor:in ) / Lindle, J. R. ( Autor:in ) / Meyer, J. R. ( Autor:in ) / Whitman, L. J. ( Autor:in )
-
Erschienen in:
-
Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.05.2004
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Format / Umfang:5 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 22, Ausgabe 3
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- 1444
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Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxyWilk, A. / Zaknoune, M. / Godey, S. / Dhellemmes, S. / Gérard, P. / Chaix, C. / Mollot, F. et al. | 2004
- 1450
-
Single-phase growth studies of GaP on Si by solid-source molecular beam epitaxyYu, Xiaojun / Kuo, Paulina S. / Ma, Kai / Levi, Ofer / Fejer, Martin M. / Harris, James S. et al. | 2004
- 1455
-
Epitaxial growth on gas cluster ion-beam processed GaSb substrates using molecular-beam epitaxyKrishnaswami, K. / Vangala, S. R. / Zhu, B. / Goodhue, W. D. / Allen, L. P. / Santeufemio, C. / Liu, X. / Ospina, M. C. / Whitten, J. / Sung, C. et al. | 2004
- 1460
-
Molecular beam epitaxial growth of mid-infrared InGaAsSb laser diodes on indium-free GaSb substratesPei, C. W. / Héroux, J. B. / Wang, W. I. et al. | 2004
- 1463
-
Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength atFu, Jun-Xian / Bank, Seth R. / Wistey, Mark A. / Yuen, Homan B. / Harris, James S. et al. | 2004
- 1468
-
Molecular beam epitaxial growth of AlGaPSb and AlGaPSb/InP distributed Bragg reflectors on InPKlem, J. F. / Serkland, D. K. / Kim, J. / Wang, T.-Y. et al. | 2004
- 1472
-
Effect of buffer layer on InSb quantum wells grown on GaAs (001) substratesMishima, T. D. / Santos, M. B. et al. | 2004
- 1475
-
Investigation of radiative and nonradiative trap centers in ZnSe:Al layers grown by molecular beam epitaxyOh, D. C. / Makino, H. / Hanada, T. / Cho, M. W. / Yao, T. / Song, J. S. / Chang, J. H. / Lu, F. et al. | 2004
- 1479
-
Low-temperature Si growth on Si (001): Impurity incorporation and limiting thickness for epitaxyBaribeau, J.-M. / Wu, X. / Lockwood, D. J. / Tay, L. / Sproule, G. I. et al. | 2004
- 1484
-
Molecular beam epitaxy growth of ZnO using initial Zn layer and MgO buffer layer on Si(111) substratesFujita, Miki / Kawamoto, Noriaki / Sasajima, Masanori / Horikoshi, Yoshiji et al. | 2004
- 1487
-
Effect of Ga-rich growth conditions on the optical properties of GaN films grown by plasma-assisted molecular beam epitaxySampath, A. V. / Garrett, G. A. / Collins, C. J. / Boyd, P. / Choe, J. / Newman, P. G. / Shen, H. / Wraback, M. / Molnar, R. J. / Caissie, J. et al. | 2004
- 1491
-
Probing the electronic structures of III–V-nitride semiconductors by x-ray photoelectron spectroscopyLay, T. S. / Kuo, W. T. / Chen, L. P. / Lai, Y. H. / Hung, W. H. / Wang, J. S. / Chi, J. Y. / Shih, D. K. / Lin, H. H. et al. | 2004
- 1495
-
Similarities between and grown on GaAs (001) substratesHong, Y. G. / Nishikawa, A. / Tu, C. W. et al. | 2004
- 1499
-
Heterostructures for achieving large responsivity in InAs/GaAs quantum dot infrared photodetectorsChakrabarti, S. / Stiff-Roberts, A. D. / Bhattacharya, P. / Kennerly, S. W. et al. | 2004
- 1503
-
Improvement on the InAs quantum dot size distribution employing high-temperature GaAs(100) substrate treatmentSaucedo-Zeni, N. / Gorbatchev, A. Yu. / Méndez-Garcı́a, V. H. et al. | 2004
- 1508
-
Temperature stabilized photoluminescence in InAs quantum dots grown on InAlGaAs/InPZhang, Z. H. / Cheng, K. Y. et al. | 2004
- 1512
-
Study of structural and optical properties of quantum dots-in-a-well heterostructuresRotella, P. / von Winckel, G. / Raghavan, S. / Stintz, A. / Jiang, Y. / Krishna, S. et al. | 2004
- 1515
-
Temperature dependence of optical properties of quantum dots grown on GaAs (001)Nishikawa, A. / Hong, Y. G. / Tu, C. W. et al. | 2004
- 1518
-
CdSe quantum dots grown on ZnSe and by molecular-beam epitaxy: Optical studiesZhou, Xuecong / Muñoz, Martin / Guo, Shiping / Tamargo, Maria C. / Gu, Yi / Kuskovsky, Igor L. / Neumark, Gertrude F. et al. | 2004
- 1523
-
Photoconductive characteristics in a trench-type InGaAs quantum-wire field effect transistorJang, Kee-Youn / Sugaya, Takeyoshi / Hahn, Cheol-Koo / Ogura, Mutsuo / Komori, Kazuhiro / Shinoda, Akito / Yonei, Kenji et al. | 2004
- 1526
-
Polarization control of vertical cavity surface emitting laser structure by using self-organized quantum wires grown on (775)B-oriented GaAs substrate by molecular beam epitaxyOhno, Yasuhide / Shimomura, Satoshi / Hiyamizu, Satoshi / Takasuka, Yasuyuki / Ogura, Mutsuo / Komori, Kazuhiro et al. | 2004
- 1529
-
Analysis of atomic structure in InAs quantum dashes grown on AlGaAsSb metamorphic buffersBalakrishnan, Ganesh / Huang, Shenghong / Dawson, L. R. / Huffaker, D. L. et al. | 2004
- 1534
-
Studies of oxide desorption from GaAs substrates via to conversion by exposure to Ga fluxWasilewski, Z. R. / Baribeau, J.-M. / Beaulieu, M. / Wu, X. / Sproule, G. I. et al. | 2004
- 1539
-
Real-time stress evolution during growth of metamorphic buffer layersLynch, C. / Beresford, R. / Chason, E. et al. | 2004
- 1544
-
Influence of background pressure on the incorporation of arsenic during molecular beam epitaxy growth of GaAsDieing, T. / Usher, B. F. et al. | 2004
- 1549
-
Flux profile modeling: Monte Carlo simulation and numerical computationVenkat, Rama / Pemmireddy, Bharat Reddy / Vijayagopal, Ramprasad / Cheng, Hwa / Bresnahan, Rich et al. | 2004
- 1554
-
Material properties and performance of metamorphic optoelectronic integrated circuits grown by molecular beam epitaxy on GaAs substratesHoke, W. E. / Leoni, R. E. / Whelan, C. S. / Kennedy, T. D. / Torabi, A. / Marsh, P. F. / Zhang, Y. / Xu, C. / Hsieh, K. C. et al. | 2004
- 1558
-
Molecular-beam epitaxy growth of quantum cascade lasers on (111)B substrates for second harmonic generationMarcadet, X. / Ortiz, V. / Bengloan, J.-Y. / Dhillon, S. / Calligaro, M. / Sirtori, C. et al. | 2004
- 1562
-
GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1.460 μmWistey, M. A. / Bank, S. R. / Yuen, H. B. / Goddard, L. L. / Harris, J. S. et al. | 2004
- 1565
-
Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applicationsLubyshev, D. / Fastenau, J. M. / Fang, X.-M. / Wu, Y. / Doss, C. / Snyder, A. / Liu, W. K. / Lamb, M. S. M. / Bals, S. / Song, C. et al. | 2004
- 1570
-
Metamorphic 6.00 Å heterojunction bipolar transistors on InP by molecular-beam epitaxyLange, M. D. / Cavus, A. / Monier, C. / Sandhu, R. S. / Block, T. R. / Gambin, V. F. / Sawdai, D. J. / Gutierrez-Aitken, A. L. et al. | 2004
- 1575
-
Correlating growth conditions with photoluminescence and lasing properties of mid-IR antimonide type II “W” structuresCanedy, C. L. / Boishin, G. I. / Bewley, W. W. / Kim, C. S. / Vurgaftman, I. / Kim, M. / Lindle, J. R. / Meyer, J. R. / Whitman, L. J. et al. | 2004
- 1580
-
Terahertz magneto-photoconductive characterization of hydrogenic barrier donors in GaAs/AlGaAs epitaxial thin filmsNaweed, Ahmer / Goodhue, William D. / Gorveatt, William J. / Giles, Robert / Waldman, Jerry / Menon, Vinod et al. | 2004
- 1584
-
Positron annihilation study of vacancies in GaInNAsPtak, A. J. / Kurtz, Sarah / Weber, M. H. / Lynn, K. G. et al. | 2004
- 1588
-
Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxyGugov, Tihomir / Gambin, Vincent / Wistey, Mark / Yuen, Homan / Bank, Seth / Harris, James S. et al. | 2004
- 1593
-
Combined x-ray diffraction/scanning tunneling microscopy study of segregation and interfacial bonding in type-II heterostructuresZhong, M. / Steinshnider, J. / Weimer, M. / Kaspi, R. et al. | 2004
- 1598
-
Compositional analysis of graded layers by x-ray energy dispersive spectrometryMahalingam, K. / Wheeler, R. / Taferner, W. T. / Eyink, K. G. / Fenstermaker, S. T. / Solomon, J. S. et al. | 2004