Reflectance difference spectroscopy spectra of clean and surfaces: New evidence for surface state contributions to optical anisotropy spectra (Englisch)
- Neue Suche nach: Rossow, U.
- Neue Suche nach: Lindner, K.
- Neue Suche nach: Lübbe, M.
- Neue Suche nach: Aspnes, D. E.
- Neue Suche nach: Zahn, D. R. T.
- Neue Suche nach: Rossow, U.
- Neue Suche nach: Lindner, K.
- Neue Suche nach: Lübbe, M.
- Neue Suche nach: Aspnes, D. E.
- Neue Suche nach: Zahn, D. R. T.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
;
16
, 4
;
2355-2357
;
1998
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Reflectance difference spectroscopy spectra of clean and surfaces: New evidence for surface state contributions to optical anisotropy spectra
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Beteiligte:Rossow, U. ( Autor:in ) / Lindner, K. ( Autor:in ) / Lübbe, M. ( Autor:in ) / Aspnes, D. E. ( Autor:in ) / Zahn, D. R. T. ( Autor:in )
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Erschienen in:
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Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.07.1998
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Format / Umfang:3 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 16, Ausgabe 4
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- 2473
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Development of ion and electron dual focused beam apparatus for high spatial resolution three-dimensional microanalysis of solid materialsCheng, Zhaohui / Sakamoto, Tetsuo / Takahashi, Masanori / Kuramoto, Yasuyuki / Owari, Masanori / Nihei, Yoshimasa et al. | 1998
- 2479
-
Key technologies of a focused ion beam system for single ion implantationMatsukawa, T. / Shinada, T. / Fukai, T. / Ohdomari, I. et al. | 1998
- 2484
-
Development of wide range energy focused ion beam lithography systemKinokuni, M. / Sawaragi, H. / Mimura, R. / Aihara, R. / Forchel, A. et al. | 1998
- 2489
-
Current status of single ion implantationShinada, Takahiro / Kumura, Yoshinori / Okabe, Jun / Matsukawa, Takashi / Ohdomari, Iwao et al. | 1998
- 2494
-
Chemically and geometrically enhanced focused ion beam micromachiningRussell, P. E. / Stark, T. J. / Griffis, D. P. / Phillips, J. R. / Jarausch, K. F. et al. | 1998
- 2499
-
Focused ion beam technology applied to microstructure fabricationVasile, Michael J. / Nassar, Raja / Xie, Jushan et al. | 1998
- 2506
-
Focused-ion-beam-assisted etching of diamond inTaniguchi, Jun / Ohno, Naoto / Takeda, Shuuichi / Miyamoto, Iwao / Komuro, Masanori et al. | 1998
- 2511
-
Focused ion beam etching of resist/Ni multilayer films and applications to metal island structure formationNakayama, Masayoshi / Wakaya, Fujio / Yanagisawa, Junichi / Gamo, Kenji et al. | 1998
- 2515
-
Focused ion beam direct deposition and its applicationsNagamachi, Shinji / Ueda, Masahiro / Ishikawa, Junzo et al. | 1998
- 2522
-
Transmission electron microscopy observation of thin foil specimens prepared by means of a focused ion beamSaka, H. et al. | 1998
- 2528
-
Dynamic Monte Carlo simulation for depth profiling by ion-sputter etching: Application to the AlAs/GaAs multilayered systemLee, Hyung-Ik / Shimizu, Ryuichi et al. | 1998
- 2532
-
Proposals for exact-point transmission-electron microscopy using focused ion beam specimen-preparation techniqueIshitani, T. / Taniguchi, Y. / Isakozawa, S. / Koike, H. / Yaguchi, T. / Matsumoto, H. / Kamino, T. et al. | 1998
- 2538
-
GaAs microcrystal growth on semiconductor surfaces by low energy focused ion beamChikyow, Toyohiro / Koguchi, Nobuyuki et al. | 1998
- 2543
-
AlGaAs/GaAs heterostructures grown on a focused-Be-ion-beam written backgateHirayama, Y. / Saku, T. et al. | 1998
- 2547
-
Formation of GaAs/AlGaAs constricted-channel field-effect transistor structures by focused Ga implantation and transport of electrons via focused ion beam induced localized statesKim, H. / Noda, T. / Sakaki, H. et al. | 1998
- 2551
-
Hopping conduction and localized states in p-Si wires formed by focused ion beam implantationsIwano, Hirotaka / Zaima, Shigeaki / Yasuda, Yukio et al. | 1998
- 2555
-
End-point detection using focused ion beam-excited photoemissions in milling deep small holes in large scale integrated circuit structuresYamaguchi, Hiroshi / Saitoh, Keiya / Mizumura, Michinobu et al. | 1998
- 2562
-
Focused ion beam implantation for opto- and microelectronic devicesKönig, H. / Mais, N. / Höfling, E. / Reithmaier, J. P. / Forchel, A. / Müssig, H. / Brugger, H. et al. | 1998
- 2567
-
Direct writing of active loads by focused ion beamsWiemann, C. / Versen, M. / Wieck, A. D. et al. | 1998
- 2570
-
In situ scanning tunneling microscope studies of high-energy, focused ion implantation of Ga into GaAs: Direct observation of ion beam profilesJones, G. A. C. / Rose, P. D. / Brown, S. et al. | 1998
- 2574
-
Ion beam synthesis of cobalt disilicide using focused ion beam implantationTeichert, J. / Bischoff, L. / Hausmann, S. et al. | 1998