Analysis of the role of mobility-lifetime products in the performance of amorphous silicon p-i-n solar cells (Englisch)
Nationallizenz
- Neue Suche nach: Asensi, J. M.
- Neue Suche nach: Merten, J.
- Neue Suche nach: Voz, C.
- Neue Suche nach: Andreu, J.
- Neue Suche nach: Asensi, J. M.
- Neue Suche nach: Merten, J.
- Neue Suche nach: Voz, C.
- Neue Suche nach: Andreu, J.
In:
Journal of Applied Physics
;
85
, 5
;
2939-2951
;
1999
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Analysis of the role of mobility-lifetime products in the performance of amorphous silicon p-i-n solar cells
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Beteiligte:Asensi, J. M. ( Autor:in ) / Merten, J. ( Autor:in ) / Voz, C. ( Autor:in ) / Andreu, J. ( Autor:in )
-
Erschienen in:Journal of Applied Physics ; 85, 5 ; 2939-2951
-
Verlag:
- Neue Suche nach: American Institute of Physics
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Erscheinungsdatum:01.03.1999
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 85, Ausgabe 5
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- 2844
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CONDENSED MATTER: Dielectric and Optical Properties (PACS 77-79) - Low temperature absorption and luminescence of oligothiophene single crystalsSchön, J.H. et al. | 1999
- 2848
-
Modeling the optical constants of hexagonal GaN, InN, and AINDjurisic, A. B. / Li, E. H. et al. | 1999
- 2848
-
Modeling the optical constants of hexagonal GaN, InN, and AlNDjurisˇic´, Aleksandra B. / Li, E. Herbert et al. | 1999
- 2848
-
CONDENSED MATTER: Dielectric and Optical Properties (PACS 77-79) - Modeling the optical constants of hexagonal GaN, InN, and AlNDjurisic, Aleksandra B. et al. | 1999
- 2854
-
Modeling the optical constants of HgxCd1−xTe alloys in the 1.5–6.0 eV rangeDjurisˇic´, Aleksandra B. / Li, E. Herbert et al. | 1999
- 2854
-
CONDENSED MATTER: Dielectric and Optical Properties (PACS 77-79) - Modeling the optical constants of HgxCd1-xTe alloys in the 1.5-6.0 eV rangeDjurisic, Aleksandra B. et al. | 1999
- 2861
-
Spectroscopic and structural characterization of electrochemically grown ZnO quantum dotsMahamuni, Shailaja / Borgohain, Kavita / Bendre, B. S. / Leppert, Valerie J. / Risbud, Subhash H. et al. | 1999
- 2861
-
CONDENSED MATTER: Dielectric and Optical Properties (PACS 77-79) - Spectroscopic and structural characterization of electrochemically grown ZnO quantum dotsMahamuni, Shailaja et al. | 1999
- 2866
-
Spatial and temperature dependence of carrier recombination in an InGaAs/InP heterostructureMonte, A. F. G. / da Silva, S. W. / Cruz, J. M. R. / Morais, P. C. / Cox, H. M. et al. | 1999
- 2866
-
CONDENSED MATTER: Dielectric and Optical Properties (PACS 77-79) - Spatial and temperature dependence of carrier recombination in an InGaAs-InP heterostructureMonte, A.F.G. et al. | 1999
- 2870
-
Polarity sensitive electrooptical response in a nematic liquid crystal–polymer mixtureBartolino, R. / Scaramuzza, N. / Lucchetta, D. E. / Barna, E. S. / Ionescu, A. Th. / Blinov, L. M. et al. | 1999
- 2870
-
CONDENSED MATTER: Dielectric and Optical Properties (PACS 77-79) - Polarity sensitive electrooptical response in a nematic liquid crystal- polymer mixtureBartolino, R. et al. | 1999
- 2875
-
CONDENSED MATTER: Dielectric and Optical Properties (PACS 77-79) - Photoluminescence quenching in Si1 xGex-Si multiple quantum wells grown with atomic hydrogenBalchin, G.A. et al. | 1999
- 2875
-
Photoluminescence quenching in Si1−xGex/Si multiple quantum wells grown with atomic hydrogenBalchin, G. A. / Amirtharaj, P. M. / Silvestre, C. / Thompson, P. et al. | 1999
- 2881
-
Thermophysical characterization of artificially aged papers by means of the photothermal deflection techniqueBertolotti, M. / Ligia, S. / Liakhou, G. / Li Voti, R. / Paoloni, S. / Sibilia, C. / Ricciardiello, G. / Alessi, P. et al. | 1999
- 2881
-
CONDENSED MATTER: Dielectric and Optical Properties (PACS 77-79) - Thermophysical characterization of artificially aged papers by means of the photothermal deflection techniqueBertolotti, M. et al. | 1999
- 2888
-
CONDENSED MATTER: Dielectric and Optical Properties (PACS 77-79) - Thermal treatment effect of the GaN buffer layer on the photoluminescence characteristics of the GaN epilayerAn, H.Y. et al. | 1999
- 2888
-
Thermal treatment effect of the GaN buffer layer on the photoluminescence characteristics of the GaN epilayerAn, H. Y. / Cha, O. H. / Kim, J. H. / Yang, G. M. / Lim, K. Y. / Suh, E. -K. / Lee, H. J. et al. | 1999
- 2894
-
Enhancement of electro-optical performance in nematic emulsion filmsDe Filpo, G. / Lanzo, J. / Nicoletta, F. P. / Chidichimo, G. et al. | 1999
- 2894
-
CONDENSED MATTER: Dielectric and Optical Properties (PACS 77-79) - Enhancement of electro-optical performance in nematic emulsion filmsFilpo, G.De et al. | 1999
- 2899
-
Laser plasma interaction at an early stage of laser ablationLu, Y. F. / Hong, M. H. / Low, T. S. et al. | 1999
- 2899
-
CONDENSED MATTER: Dielectric and Optical Properties (PACS 77-79) - Laser plasma interaction at an early stage of laser ablationLu, Y.F. et al. | 1999
- 2904
-
INTERDISCIPLINARY PHYSICS (PACS 81-98) - Growth of amorphous hydrogenated carbon nitride films in radio-frequency plasmaZhang, Mei et al. | 1999
- 2904
-
Growth of amorphous hydrogenated carbon nitride films in radio-frequency plasmaZhang, Mei / Nakayama, Yoshikazu / Miyazaki, Tsutomu / Kume, Masato et al. | 1999
- 2909
-
Growth stage of crystalline Y2O3 film on Si(100) grown by an ionized cluster beam depositionCho, M.-H. / Ko, D.-H. / Jeong, K. / Whangbo, S. W. / Whang, C. N. / Choi, S. C. / Cho, S. J. et al. | 1999
- 2909
-
INTERDISCIPLINARY PHYSICS (PACS 81-98) - Growth stage of crystalline Y2O3 film on Si(100) grown by an ionized cluster beam depositionCho, M.-H. et al. | 1999
- 2915
-
INTERDISCIPLINARY PHYSICS (PACS 81-98) - Pulsed-laser deposition of diamond-like carbon: Relations between laser fluence, velocity of carbon ions, and bonding in the filmsKoivusaari, K.J. et al. | 1999
- 2915
-
Pulsed-laser deposition of diamond-like carbon: Relations between laser fluence, velocity of carbon ions, and bonding in the filmsKoivusaari, K. J. / Levoska, J. / Leppa¨vuori, S. et al. | 1999
- 2921
-
INTERDISCIPLINARY PHYSICS (PACS 81-98) - Mechanism of low temperature nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impactMizokuro, Toshiko et al. | 1999
- 2921
-
Mechanism of Iow temperature nitridation of silicon oxide layers by nitrogen plasma generated by Iow energy electron impactMizokuro, T. / Yoneda, K. / Todokoro, Y. / Kobayashi, H. et al. | 1999
- 2921
-
Mechanism of low temperature nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impactMizokuro, Toshiko / Yoneda, Kenji / Todokoro, Yoshihiro / Kobayashi, Hikaru et al. | 1999
- 2929
-
Diameter of As clusters in LT-GaAs by Raman spectroscopyToufella, M. / Puech, P. / Carles, R. / Bedel, E. / Fontaine, C. / Claverie, A. / Benassayag, G. et al. | 1999
- 2929
-
INTERDISCIPLINARY PHYSICS (PACS 81-98) - Diameter of As clusters in LT-GaAs by Raman spectroscopyToufella, M. et al. | 1999
- 2934
-
INTERDISCIPLINARY PHYSICS (PACS 81-98) - Transmission electron microscopy of silicides nucleated in Y-Si reaction systemNoya, Atsushi et al. | 1999
- 2934
-
Transmission electron microscopy of silicides nucleated in Y–Si reaction systemNoya, Atsushi / Takeyama, Mayumi B. / Sasaki, Katsutaka / Aoyagi, Eiji / Hiraga, Kenji et al. | 1999
- 2939
-
Analysis of the role of mobility-lifetime products in the performance of amorphous silicon p-i-n solar cellsAsensi, J. M. / Merten, J. / Voz, C. / Andreu, J. et al. | 1999
- 2939
-
INTERDISCIPLINARY PHYSICS (PACS 81-98) - Analysis of the role of mobility-lifetime products in the performance of amorphous silicon p-i-n solar cellsAsensi, J.M. et al. | 1999
- 2952
-
INTERDISCIPLINARY PHYSICS (PACS 81-98) - Evolution of a two-dimensional quantum cellular neural network driven by an external fieldQiao, Bi et al. | 1999
- 2952
-
Evolution of a two-dimensional quantum cellular neural network driven by an external fieldQiao, Bi / Ruda, Harry E. et al. | 1999
- 2962
-
INTERDISCIPLINARY PHYSICS (PACS 81-98) - Modeling and manufacturability assessment of bistable quantum-dot cellsGovernale, M. et al. | 1999
- 2962
-
Modeling and manufacturability assessment of bistable quantum-dot cellsGovernale, M. / Macucci, M. / Iannaccone, G. / Ungarelli, C. / Martorell, J. et al. | 1999
- 2972
-
Intersubband infrared detector with optimized valence band quantum wells for 3–5 μm wavelength regionLiu, H. C. / Szmulowicz, F. / Wasilewski, Z. R. / Buchanan, M. / Brown, G. J. et al. | 1999
- 2972
-
Intersubband infrared detector with optimized valence band quantum wells for 3-5 mu m wavelength regionLiu, H.C. / Szmulowicz, F. / Wasilewski, Z.R. / Buchanan, M. / Brown, G.J. et al. | 1999
- 2972
-
INTERDISCIPLINARY PHYSICS (PACS 81-98) - Intersubband infrared detector with optimized valence band quantum wells for 3-5 mm wavelength regionLiu, H.C. et al. | 1999
- 2977
-
Quasiadiabatic switching for metal-island quantum-dot cellular automataTo´th, Ge´za / Lent, Craig S. et al. | 1999
- 2977
-
INTERDISCIPLINARY PHYSICS (PACS 81-98) - Quasiadiabatic switching for metal-island quantum-dot cellular automataToth, Géza et al. | 1999
- 2985
-
Transition of carrier distribution from a strained to relaxed state in InGaAs/GaAs quantum wellWang, P. Y. / Chen, J. F. / Wang, J. S. / Chen, N. C. / Chen, Y. S. et al. | 1999
- 2985
-
COMMUNICATIONS - Transition of carrier distribution from a strained to relaxed state in InGaAs-GaAs quantum wellWang, P.Y. et al. | 1999
- 2988
-
COMMUNICATIONS - Microstructural study on the C49-to-C54 phase transformation in TiSi2 formed from preamorphization implantationOkihara, M. et al. | 1999
- 2988
-
Microstructural study on the C49-to-C54 phase transformation in TiSi2 formed from preamorphization implantationOkihara, M. / Hirashita, N. / Tai, K. / Kageyama, M. / Harada, Y. / Onoda, H. et al. | 1999
- 2991
-
Connection between hydrogen plasma treatment and etching of amorphous phase in the layer-by-layer technique with very high frequency plasma excitationVetterl, O. / Hapke, P. / Houben, L. / Finger, F. / Carius, R. / Wagner, H. et al. | 1999
- 2991
-
COMMUNICATIONS - Connection between hydrogen plasma treatment and etching of amorphous phase in the layer-by-layer technique with very high frequency plasma excitationVetterl, O. et al. | 1999
- 2994
-
Device simultaneous determination of the source and cavity parameters of a microcavity light-emitting diodeOchoa, D. / Houdre´, R. / Stanley, R. P. / Dill, C. / Oesterle, U. / Ilegems, M. et al. | 1999
- 2994
-
COMMUNICATIONS - Device simultaneous determination of the source and cavity parameters of a microcavity light-emitting diodeOchoa, D. et al. | 1999
- 2997
-
Temperature-dependent photoluminescence of Ino~0~.~5Al~0~.~5As/Al~0~.~2~5Ga~0~.~7~5As self-organized quantum dotsPhillips, J. / Kamath, K. / Bhattacharya, P. / Venkateswaran, U. et al. | 1999
- 2997
-
COMMUNICATIONS - Temperature-dependent photoluminescence of In0.5 Al0.5As-Al0.25Ga0.75As self-organized quantum dotsPhillips, J. et al. | 1999
- 2997
-
Temperature-dependent photoluminescence of In0.5Al0.5As/Al0.25Ga0.75As self-organized quantum dotsPhillips, J. / Kamath, K. / Bhattacharya, P. / Venkateswaran, U. et al. | 1999
- 3000
-
In situ reflection high-energy electron diffraction observation of epitaxial LaNiO3 thin filmsChen, P. / Xu, S. Y. / Zhou, W. Z. / Ong, C. K. / Cui, D. F. et al. | 1999
- 3000
-
COMMUNICATIONS - In situ reflection high-energy electron diffraction observation of epitaxial LaNiO3 thin filmsChen, P. et al. | 1999
- 3003
-
COMMUNICATIONS - Chemical trends for acceptor impurities in GaNNeugebauer, Jörg et al. | 1999
- 3003
-
Chemical trends for acceptor impurities in GaNNeugebauer, Jo¨rg / Van de Walle, Chris G. et al. | 1999
- 3006
-
High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentrationCho, Yong-Hoon / Fedler, F. / Hauenstein, R. J. / Park, G. H. / Song, J. J. / Keller, S. / Mishra, U. K. / DenBaars, S. P. et al. | 1999
- 3006
-
COMMUNICATIONS - High resolution x-ray analysis of pseudomorphic InGaN-GaN multiple quantum wells: Influence of Si doping concentrationCho, Yong-Hoon et al. | 1999
- 3009
-
Two-channel AlGaN/GaN heterostructure field effect transistor for high power applicationsGaska, R. / Shur, M. S. / Fjeldly, T. A. / Bykhovski, A. D. et al. | 1999
- 3009
-
COMMUNICATIONS - Two-channel AlGaN-GaN heterostructure field effect transistor for high power applicationsGaska, R. et al. | 1999
- 3009
-
Two-channel AIGaN/GaN heterostructure field effect transistor for high power applicationsGaska, R. / Shur, M. S. / Fjeldly, T. A. / Bykhovski, A. D. et al. | 1999
- 3012
-
CUMULATIVE AUTHOR INDEX| 1999