Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies (Englisch)
Nationallizenz
- Neue Suche nach: Morkoc¸, H.
- Neue Suche nach: Strite, S.
- Neue Suche nach: Gao, G. B.
- Neue Suche nach: Lin, M. E.
- Neue Suche nach: Sverdlov, B.
- Neue Suche nach: Burns, M.
- Neue Suche nach: Morkoc¸, H.
- Neue Suche nach: Strite, S.
- Neue Suche nach: Gao, G. B.
- Neue Suche nach: Lin, M. E.
- Neue Suche nach: Sverdlov, B.
- Neue Suche nach: Burns, M.
In:
Journal of Applied Physics
;
76
, 3
;
1363-1398
;
1994
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
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Beteiligte:Morkoc¸, H. ( Autor:in ) / Strite, S. ( Autor:in ) / Gao, G. B. ( Autor:in ) / Lin, M. E. ( Autor:in ) / Sverdlov, B. ( Autor:in ) / Burns, M. ( Autor:in )
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Erschienen in:Journal of Applied Physics ; 76, 3 ; 1363-1398
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Verlag:
- Neue Suche nach: American Institute of Physics
-
Erscheinungsdatum:01.08.1994
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 76, Ausgabe 3
Zeige alle Jahrgänge und Ausgaben
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- 1363
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Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologiesMorkoc¸, H. / Strite, S. / Gao, G. B. / Lin, M. E. / Sverdlov, B. / Burns, M. et al. | 1994
- 1399
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Free‐electron laser intracavity light as a source of hard x‐ray production by Compton backscatteringDattoli, G. / Gallardo, Juan C. / Ottaviani, P. L. et al. | 1994
- 1405
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- 1405
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Estimator of direct current bias and drift of Ti:LiNbO~3 optical modulatorsNagata, H. / Kiuchi, K. / Shimotsu, S. / Ogiwara, J. et al. | 1994
- 1409
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Efficient Raman conversion of high repetition rate, 193 nm picosecond laser pulsesTomov, I. V. / Chen, P. / Rentzepis, P. M. et al. | 1994
- 1413
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Spectroscopy and green upconversion laser emission of Er3+‐doped crystals at room temperatureDanger, T. / Koetke, J. / Brede, R. / Heumann, E. / Huber, G. / Chai, B. H. T. et al. | 1994
- 1423
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- 1431
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- 1436
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- 1447
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Gas dynamics resulting from laser vaporization of metals in one dimension. IIBellantone, R. / Hahn, Y. et al. | 1994
- 1455
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Velocity surface measurements for ZnO films over {001}‐cut GaAsKim, Yoonkee / Hunt, William D. / Liu, Yongsheng / Jen, Cheng‐Kuei et al. | 1994
- 1462
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Thermal diffusivity measurements in opaque solids by the mirage technique in the temperature range from 300 to 1000 KSa´nchez‐Lavega, A. / Salazar, A. et al. | 1994
- 1469
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- 1476
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- 1480
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Time‐integrated optical emission studies of plumes generated from laser ablated germania glassWolf, Paul J. et al. | 1994
- 1487
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Two‐photon laser induced fluorescence and amplified spontaneous emission atom concentration measurements in O2 and H2 dischargesAmorim, J. / Baravian, G. / Touzeau, M. / Jolly, J. et al. | 1994
- 1494
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- 1503
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- 1511
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- 1515
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- 1518
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Solute trapping of group III, IV, and V elements in silicon by an aperiodic stepwise growth mechanismReitano, Riccardo / Smith, Patrick M. / Aziz, Michael J. et al. | 1994
- 1530
-
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- 1535
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Growth of voids in porous ductile materials at high strain rateWang, Ze‐Ping et al. | 1994
- 1543
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On the shear strength of shock loaded brittle solidsRosenberg, Z. et al. | 1994
- 1547
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Determination of bending stress of Si water using concentrated loadChen, L. D. / Zhang, M. J. / Zhang, S. et al. | 1994
- 1547
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Determination of bending stress of Si wafer using concentrated loadChen, L. D. / Zhang, M. J. / Zhang, S. et al. | 1994
- 1552
-
Local thermal conductivity in chemical‐vapor‐deposited diamondGraebner, J. E. / Jin, S. / Herb, J. A. / Gardinier, C. F. et al. | 1994
- 1557
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Role of liquid droplet surface diffusion in the vapor‐liquid‐solid whisker growth mechanismWang, Hongyu / Fischman, Gary S. et al. | 1994
- 1563
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- 1572
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Effect of boron doping on the structural properties of polycrystalline silicon films grown at reduced pressuresLin, Horng‐Chih / Lin, Hsiao‐Yi / Chang, Chun‐Yen / Jung, Tz‐Gwei / Wang, P. J. / Deng, Ray‐Chern / Lin, Jandel et al. | 1994
- 1578
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Silicide formation in Co/amorphous Si multilayersWang, W. H. / Wang, W. K. et al. | 1994
- 1585
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Growth studies of erbium‐doped GaAs deposited by metalorganic vapor phase epitaxy using novel cyclopentadienyl‐based erbium sourcesRedwing, J. M. / Kuech, T. F. / Gordon, D. C. / Vaartstra, B. A. / Lau, S. S. et al. | 1994
- 1592
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In situ observations of As atoms at step sites of vicinal Si(100) surfaces by coaxial impact‐collision ion scattering spectroscopyHashimoto, A. / Saitoh, T. / Tamura, M. / Itoh, T. et al. | 1994
- 1598
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Energetics of dislocation dipoles in capped epitaxially strained layersAtkinson, A. / Jain, S. C. et al. | 1994
- 1604
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In situ Raman spectroscopy during diamond growth in a microwave plasma reactorFayette, L. / Marcus, B. / Mermoux, M. / Rosman, N. / Abello, L. / Lucazeau, G. et al. | 1994
- 1609
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Accurately determining the composition and thickness of layers in a GaAs/InGaAs superlatticeJones, K. A. / Cole, M. W. / Cooke, P. / Flemish, J. R. / Pfeffer, R. L. / Shen, H. et al. | 1994
- 1615
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Atomic layer epitaxy of Si on Ge(100): Direct recoiling studies of film morphologyKoleske, D. D. / Gates, S. M. et al. | 1994
- 1622
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Positron stopping profiles in multilayered systemsAers, G. C. et al. | 1994
- 1633
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Roughening instability and ion‐induced viscous relaxation of SiO2 surfacesMayer, T. M. / Chason, E. / Howard, A. J. et al. | 1994
- 1644
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Epitaxial (GaAs)1−x(Si2)x metastable alloys on GaAs(001) and (GaAs)1−x(Si2)x /GaAs strained‐layer superlattices: Crystal growth, spinodal decomposition, and antiphase domainsKim, Y.‐W. / Mei, D. H. / Lubben, D. / Robertson, I. / Greene, J. E. et al. | 1994
- 1656
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Surface modification of magnetic recording heads by plasma immersion ion implantation and depositionKomvopoulos, K. / Wei, B. / Anders, S. / Anders, A. / Brown, I. G. et al. | 1994
- 1665
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Some properties of semiconducting IrSb3Slack, Glen A. / Tsoukala, Veneta G. et al. | 1994
- 1672
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Procedure for fitting Monte Carlo calculated impact ionization coefficient to experimentErshov, M. / Ryzhii, V. et al. | 1994
- 1676
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Spatial characteristics of electron- and photon-induced secondary electron cascades in CslGibrekhterman, A. et al. | 1994
- 1676
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Spatial characteristics of electron‐ and photon‐induced secondary electron cascades in CsIGibrekhterman, A. / Akkerman, A. / Breskin, A. / Chechik, R. et al. | 1994
- 1681
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Generation of delocalized E'd defects in buried Si oxide by hole injectionStesmans, A. et al. | 1994
- 1681
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Generation of delocalized E’δ defects in buried Si oxide by hole injectionStesmans, A. / Vanheusden, K. et al. | 1994
- 1686
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Redistribution of constituent elements in Pd/Ge contacts to n‐type GaAs using rapid thermal annealingLai, Jiun Tsuen / Lee, Joseph Ya‐min et al. | 1994
- 1686
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Redistribution of constituents elements in Pd/Ge contacts to n-type GaAs using rapid thermal annealingLai, Jiun-Tsuen / Lee, J.Y.M. et al. | 1994
- 1691
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Phonon‐mediated carrier capture in quantum well lasersPreisel, Michael / Mo&slash;rk, Jesper et al. | 1994
- 1697
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Effects of rapid thermal annealing on electrical properties of heavily doped silicon molecular‐beam‐epitaxial layer with B2O3 doping sourceXu, Qiang / Yuan, Jian / Wang, Jianbao / Huang, Daming / Lu, Fang / Sun, Henghui / Wang, Xun / Liu, Rong et al. | 1994
- 1701
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Raman studies of plasmon modes in a drifting two‐dimensional electron gasO´ Su´illeabha´in, L. C. / Hughes, H. P. / Churchill, A. C. / Ritchie, D. A. / Grimshaw, M. P. / Jones, G. A. C. et al. | 1994
- 1706
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Out‐of‐plane magnetoresistivity for fields parallel to the c axis in single‐crystalline (La1−xSrx)2 CuO4Yuan, S. L. / Kadowaki, K. / Yang, Z. J. / Li, J. Q. / Chen, J. L. / Kimura, T. / Takeya, H. / Kishio, K. et al. | 1994
- 1711
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Josephson transmission lines with multilayer Josephson junctionsLomatch, S. / Rippert, E. D. et al. | 1994
- 1720
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Correlation of transport and magnetic critical currents in melt‐processed YBa2Cu3O7−δ thick filmsJones, A. R. / Cardwell, D. A. / Ingle, N. J. C. / Ashworth, S. P. / Campbell, A. M. / Alford, N. McN. / Button, T. W. / Wellhofer, F. / Abell, J. S. et al. | 1994
- 1720
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Correlation of transport and magnetic critical currents in melt-processed YBa2Cu3O7-d thick filmsJones, A.R. et al. | 1994
- 1720
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Correlation of transport and magnetic critical currents in melt-processed YBa2Cu3O(7-delta) thick filmsJones, A.R. / Cardwell, D.A. / Ingle, N.J.C. / Ashworth, S.P. / Campbell, A.M. / Alford, N.M. / Button, T.W. / Wellhofer, F. / Abell, J.S. et al. | 1994
- 1726
-
Field orientations and sweep rate effects on magnetic switching of Stoner–Wohlfarth particlesLu, Jing Ju / Huang, Huei Li / Klik, I. et al. | 1994
- 1733
-
Magnetic properties and magnetic hardening mechanism of Pt‐Co‐B alloysQiu, Ning / Flanagan, William F. / Wittig, James E. et al. | 1994
- 1741
-
On the relationship between magnetic viscosity and coercivity of perpendicular mediate Lintelo, J. G. Th. / Lodder, J. C. et al. | 1994
- 1745
-
Magnetic properties of anisotropic Nd(Fe,Mo)12Nx powdersYang, Ying‐chang / Liu, Zun‐xiao / Zhang, Xiao‐dong / Cheng, Ben‐pei / Ge, Sen‐lin et al. | 1994
- 1749
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Variations of the local anisotropy versus Tb content in amorphous CoZrTb thin filmsSuran, G. / Ouahmane, H. / Iglesias, I. / Rivas, M. / Corrales, J. A. / Contreras, M. C. et al. | 1994
- 1749
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Variations of the local anisotropic versus Tb content in amorphous CoZrTb thin filmsSuran, G. / Ouahmane, H. / Iglesias, I. / Rivas, M. / Corrales, J.A. / Contreras, M.C. et al. | 1994
- 1754
-
Comparison of defect structure in N2O‐ and NH3‐nitrided oxide dielectricsYount, J. T. / Lenahan, P. M. / Krick, J. T. et al. | 1994
- 1759
-
Existence of a Pb1‐like defect center in porous siliconXiao, Y. / McMahon, T. J. / Pankove, J. I. / Tsuo, Y. S. et al. | 1994
- 1764
-
Measurement of piezoelectric coefficients of ferroelectric thin filmsLefki, K. / Dormans, G. J. M. et al. | 1994
- 1768
-
Low‐temperature epitaxial growth of BaTiO3 films by radio‐frequency‐mode electron cyclotron resonance sputteringMatsuoka, Morito / Hoshino, Koichi / Ono, Ken’ichi et al. | 1994
- 1776
-
Photorefractive damage in LiNbO3 thin‐film optical waveguides grown by liquid phase epitaxyYamada, Atsuo / Tamada, Hitoshi / Saitoh, Masaki et al. | 1994
- 1784
-
Effect of tension on R lines in ruby crystals shocked along crystal c axisGupta, Y. M. / Horn, P. D. / Burt, J. A. et al. | 1994
- 1789
-
Raman spectroscopic study of order–disorder in lead magnesium niobateIdink, Heike / White, William B. et al. | 1994
- 1794
-
The dependence of the electro‐optic effect on electric field distribution and light beam propagation directionde Kort, Kees / Heringa, Anco / Vrehen, Joris J. et al. | 1994
- 1800
-
Optical and thermal properties of electron- and hole-trapping sites in the x-ray storage phosphor Rbl:X (X=Tl^+, In^+, Pb^2^+, Eu^2^+)Thoms, M. / Von Seggern, H. / Winnacker, A. et al. | 1994
- 1800
-
Optical and thermal properties of electron- and hole-trapping sites in the x-ray storage phosphor Rbl:X (X=TI+,In+, Pb2+, Eu2+)Thoms, M. et al. | 1994
- 1800
-
Optical and thermal properties of electron‐ and hole‐trapping sites in the x‐ray storage phosphor RbI:X (X=Tl+, In+, Pb2+, Eu2+)Thoms, M. / Seggern, H. von / Winnacker, A. et al. | 1994
- 1809
-
Refractive indices measurement of (GaInP)m/(AlInP)n quasi‐quaternaries and GaInP/AlInP multiple quantum wellsKaneko, Yawara / Kishino, Katsumi et al. | 1994
- 1809
-
Refractive indices measurement of (GaInP)m-(AllnP)n quasi-quaternaries and GalnP-AllnP multiple quantum wellsKaneko, Yawara et al. | 1994
- 1819
-
Raman study of low temperature phase transitions in bismuth titanate, Bi4Ti3O12Idink, H. / Srikanth, V. / White, William B. / Subbarao, E. C. et al. | 1994
- 1819
-
Raman study of low temperature phase transitions in bismuth titanate, Bi4Ti3iO12Idink, H. / Srikanth, V. / White, W.B. / Subbarao, E.C. et al. | 1994
- 1824
-
Optical and electrical properties of evaporated 2,5‐bis‐methylthio‐7,7’,8,8’‐tetracyanoquinodimethaneZambounis, J. S. / Mizuguchi, J. / Rihs, G. / Chauvet, O. / Zuppiroli, L. et al. | 1994
- 1830
-
Optical properties of polyimide during ArF excimer laser ablationHahn, D. W. / Pettit, G. H. / Ediger, M. N. et al. | 1994
- 1833
-
Inhomogeneous pulsed laser melting of high‐dose Ge‐implanted siliconCalcagnile, L. / Grimaldi, M. G. / Baeri, P. et al. | 1994
- 1840
-
Oxidation of silicon by low energy oxygen bombardmentWilliams, J. S. / Petravic´, M. / Svensson, B. G. / Conway, M. et al. | 1994
- 1847
-
Radio‐frequency bias effects on SiO2 films deposited by distributed electron cyclotron resonance plasma enhanced chemical vapor depositionJiang, N. / Agius, B. / Hugon, M. C. / Olivier, J. / Puech, M. et al. | 1994
- 1856
-
Hydrogen release kinetics during reactive magnetron sputter deposition of a‐Si:H: An isotope labeling studyAbelson, J. R. / Mandrell, L. / Doyle, J. R. et al. | 1994
- 1871
-
Laser ablation deposition of Cu‐Ni and Ag‐Ni films: Nonconservation of alloy composition and film microstructurevan Ingen, R. P. / Fastenau, R. H. J. / Mittemeijer, E. J. et al. | 1994
- 1884
-
Si(001)2×1 gas‐source molecular‐beam epitaxy from Si2H6: Growth kinetics and boron dopingBramblett, T. R. / Lu, Q. / Karasawa, T. / Hasan, M.‐A. / Jo, S. K. / Greene, J. E. et al. | 1994
- 1884
-
Si(OO1)2x1 gas-source molecular-beam epitaxy from Si~2H~6: Growth kinetics and boron dopingBramblett, T. R. / Lu, Q. / Karasawa, T. / Hasan, M.-A. et al. | 1994
- 1884
-
Si(001)2x1 gas-source molecular-beam epitaxy from Si2H6: Growth kinetics and boron dopingBramblett, T.R. et al. | 1994
- 1889
-
Noise and photoconductive gain in AlGaAs/GaAs quantum well intersubband infrared photodetectorsXing, B. / Liu, H. C. / Wilson, P. H. / Buchanan, M. / Wasilewski, Z. R. / Simmons, J. G. et al. | 1994
- 1895
-
Low frequency (1/f) noise in YBa2Cu3O7−δ grain boundary junction dc superconducting quantum interference devicesChen, J. / Ogawa, T. / Nakamura, H. / Myoren, H. / Nakajima, K. / Yamashita, T. et al. | 1994
- 1895
-
Low frequency (1/f) noise in YBa~2Cu~3O~gamma~-~ grain boundary junction dc superconducting quantum interference devicesChen, J. / Ogawa, T. / Nakamura, H. / Myoren, H. et al. | 1994
- 1895
-
Low frequency (1-f) noise in YBa2Cu3O7-d grain boundary junction dc superconducting quantum interference devicesChen, J. et al. | 1994
- 1895
-
Low frequency (1/f) noise in YBa2Cu3O(7-delta) grain boundary junction dc superconducting quantum interference devicesChen, J. / Ogawa, T. / Nakamura, H. / Myoren, H. / Nakajima, K. / Yamashita, T. et al. | 1994
- 1899
-
Thermoelectric devices using semiconductor quantum wellsMahan, G. D. / Lyon, H. B. et al. | 1994
- 1902
-
Nonequilibrium and bolometric photoresponse in patterned YBa2Cu3O7−δ thin filmsDanerud, M. / Winkler, D. / Lindgren, M. / Zorin, M. / Trifonov, V. / Karasik, B. S. / Gol’tsman, G. N. / Gershenzon, E. M. et al. | 1994
- 1902
-
Nonequilibrium and bolometric photoresponse in patterned YBa2Cu3O(7-delta) thin filmsDanerud, M. / Winkler, D. / Lindgren, M. / Zorin, M. / Trifonov, V. / Karasik, B.S. / Goltsman, G.N. / Gershenzon, E.M. et al. | 1994
- 1902
-
Nonequilibrium and bolometric photoresponse in patterned YBa2Cu3O7-d thin filmsDanerud, M. et al. | 1994
- 1910
-
Design, fabrication, switching, and optical characteristics of new magneto‐optic spatial light modulatorCho, Jaekyong / Santhanam, Suresh / Le, Tan / Mountfield, Keith / Lambeth, David N. / Stancil, Daniel / Ross, William E. / Lucas, John et al. | 1994
- 1920
-
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- 1924
-
Monte Carlo study of electron transport in strained silicon‐carbon alloyErshov, M. / Ryzhii, V. et al. | 1994
- 1927
-
Field‐assisted self‐propagating synthesis of β‐SiCFeng, A. / Munir, Z. A. et al. | 1994
- 1927
-
Field-assisted self-propagating synthesis of b-SiCFeng, A. et al. | 1994
- 1927
-
Field-assisted self-propagating synthesis of beta-SiCFeng, A. / Munir, Z.A. et al. | 1994
- 1929
-
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- 1929
-
Bu¨ttiker–Landauer traversal times in the radial direction of cylindrical single and double barriersPing, Er‐Xuan et al. | 1994
- 1932
-
Promotion of the oxidation of silicon carbide by a rubidium overlayerRiehl‐Chudoba, M. / Soukiassian, P. / Jaussaud, C. et al. | 1994
- 1935
-
Accounting for the Hugoniot elastic limits of polymers by using pressure‐dependent yield criterionRosenberg, Z. / Partom, Y. et al. | 1994
- 1937
-
Epitaxial iridium silicide formation during deposition of Ir on Si(100) at high temperature under ultrahigh vacuumChung, C. K. / Hwang, J. et al. | 1994
- 1940
-
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- 1943
-
Resistivity-peak anomaly in Y1Ba2Cu3O 7-d crystals and nonuniformly distributed critical-temperature inhomogeneitiesMosqueira, J. et al. | 1994
- 1943
-
Resistivity‐peak anomaly in Y1Ba2Cu3O7−δ crystals and nonuniformly distributed critical‐temperature inhomogeneitiesMosqueira, J. / Pomar, A. / Veira, J. A. / Maza, J. / Vidal, Fe´lix et al. | 1994
- 1943
-
Resistivity-peak anomaly in Y1Ba2Cu3O(7-delta) crystals and nonuniformly distributed critical-temperature inhomogeneitiesMosqueira, J. / Pomar, A. / Veira, J.A. / Maza, J. / Vidal, F. et al. | 1994
- 1946
-
Epitaxial GaAs growth using atomic hydrogen as the reactantSilva‐Andrade, F. / Cha´vez, F. / Go´mez, E. et al. | 1994
- 1948
-
Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on siliconGeorgakilas, A. / Christou, A. / Zekentes, K. / Mercy, J. M. / Konczewicz, L. K. / Vila, A. / Cornet, A. et al. | 1994
- 1948
-
Electrical transport quantum effects in the In0.53Ga 0.47)As-In0.52AI0.48As heterostructure on siliconGeorgakilas, A. et al. | 1994
- 1951
-
Determination of the deformation potentials of GaAs0.80P0.20Gonza´lez, Y. / Armelles, G. / Gonza´lez, L. et al. | 1994
- 1954
-
Gain enhancement in InAlAs/InGaAs heterojunction bipolar transistors using an emitter ledgeKyono, C. S. / Binari, S. C. / Ikossi‐Anastasiou, K. et al. | 1994
- 1954
-
Gain enhancement in InAIAs-InGaAs heterojunction bipolar transistors using an emitter ledgeKyono, C.S. et al. | 1994
- 1956
-
Determination of ionization energies of the nitrogen donors in 6H‐SiC by admittance spectroscopyRaynaud, C. / Ducroquet, F. / Guillot, G. / Porter, L. M. / Davis, R. F. et al. | 1994
- 1959
-
Diminution of the surface states on GaAs by a sulfur treatmentOh, Y. T. / Byun, S. C. / Lee, B. R. / Kang, T. W. / Hong, C. Y. / Park, S. B. / Lee, H. K. / Kim, T. W. et al. | 1994
- 1962
-
Measurement of residual strain in InGaAs buffer layersMaigne´, P. / Baribeau, J.‐M. et al. | 1994
- 1965
-
Enhancement of electron transfer and negative differential resistance in GaAs‐based real‐space transfer devices by using strained InGaAs channel layersLai, Jiun‐Tsuen / Lee, Joseph Ya‐min et al. | 1994
- 1968
-
A study of epitaxially stabilized FeSi2 by surface enhanced scatteringMo, Raman Yujun et al. | 1994
- 1968
-
A study of epitaxially stabilized FeSi2 by surface enhanced Raman scatteringMo, Yujun / von Ka¨nel, H. / Onda, N. / Wachter, P. / Mattei, G. et al. | 1994
- 1971
-
Magnetic properties of a novel Sm3(Fe,Ti)29Ny nitrideYang, Fu‐Ming / Nasunjilegal, B. / Wang, Jian‐Li / Pan, Hua‐Yong / Qing, Wei‐Dong / Zhao, Ru‐Wen / Hu, Bo‐Ping / Wang, Yi‐Zhong / Liu, Gui‐Chuan / Li, Hong‐Shuo et al. | 1994
- 1974
-
Te doping of GaAs using diethyl‐telluriumKamp, M. / Mo¨rsch, G. / Gra¨ber, J. / Lu¨th, H. et al. | 1994
- 1977
-
Analytical studies on multiple delta doping in diamond thin films for efficient hole excitation and conductivity enhancementKobayashi, Takeshi / Ariki, Takuya / Iwabuchi, Mamoru / Maki, Tetsuro / Shikama, Shozo / Suzuki, Sei et al. | 1994
- 1980
-
Mobility anisotropy of two‐dimensional hole systems in (311)A GaAs/AlxGa1−xAs heterojunctionsHeremans, J. J. / Santos, M. B. / Hirakawa, K. / Shayegan, M. et al. | 1994
- 1980
-
Mobility anisotropy of two-dimensional hole systems in (311) GaAs-AIxGa1-xAs heterojunctionsHeremans, A.J.J. et al. | 1994
- 1983
-
Phase transition of new solid solution crystal Li0.7Na0.3NbO3Kim, J. B. / Kim, J. N. et al. | 1994
- 1986
-
Photoelectronic properties of porous siliconOzaki, Tsuyoshi / Araki, Minoru / Yoshimura, Shotaro / Koyama, Hideki / Koshida, Nobuyoshi et al. | 1994
- 1989
-
Mechanical stress in gallium‐arsenide on silicon substratesBudnick, B. / Wilke, K. / Heymann, G. et al. | 1994
- 1992
-
Optical band‐gap shrinkage in highly transparent and conducting ZnO thin films deposited by the Pyrosol processTiburcio‐Silver, A. / Joubert, J. C. / Labeau, M. et al. | 1994
- 1995
-
Role of fluorine atoms on the thermal stability of the silicide/silicon structureTsui, Bing‐Yue / Chen, Mao‐Chieh et al. | 1994
- 1998
-
Polarization dependence of spectral transmission and photoconductive response of a p‐doped multiple quantum well structureFenigstein, A. / Finkman, E. / Bahir, G. / Schacham, S. E. et al. | 1994
- 2001
-
Erratum: ‘‘The number of third‐order elastic constants of an icosahedral solid’’ [J. Appl. Phys. 60, 2638 (1986)]Chen, L. C. / Ebalard, S. / Goldman, L. M. / Ohashi, W. / Park, B. / Spaepen, F. et al. | 1994
- 2001
-
The number of third-order elastic constants of an icosahedral solid" [J. Appl. Phys. 60, 2638 (1986)]Chen, L. C. / Ebalard, S. / Goldman, L. M. / Ohashi, W. et al. | 1994
- 2002
-
CUMULATIVE AUTHOR INDEX| 1994