Distributed microwave amplifier on field emitter arrays with a nonhomogeneous energy collector (Englisch)
- Neue Suche nach: Gulyaev, Yu. V.
- Neue Suche nach: Nefedov, I. S.
- Neue Suche nach: Sinitsyn, N. I.
- Neue Suche nach: Torgashov, G. V.
- Neue Suche nach: Zakharchenko, Yu. F.
- Neue Suche nach: Zhbanov, A. I.
- Neue Suche nach: Gulyaev, Yu. V.
- Neue Suche nach: Nefedov, I. S.
- Neue Suche nach: Sinitsyn, N. I.
- Neue Suche nach: Torgashov, G. V.
- Neue Suche nach: Zakharchenko, Yu. F.
- Neue Suche nach: Zhbanov, A. I.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
;
13
, 2
;
593-598
;
1995
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Distributed microwave amplifier on field emitter arrays with a nonhomogeneous energy collector
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Weitere Titelangaben:Distributed microwave amplifier
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Beteiligte:Gulyaev, Yu. V. ( Autor:in ) / Nefedov, I. S. ( Autor:in ) / Sinitsyn, N. I. ( Autor:in ) / Torgashov, G. V. ( Autor:in ) / Zakharchenko, Yu. F. ( Autor:in ) / Zhbanov, A. I. ( Autor:in )
-
Erschienen in:
-
Verlag:
- Neue Suche nach: American Vacuum Society
-
Erscheinungsdatum:01.03.1995
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Format / Umfang:6 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
-
Sprache:Englisch
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Schlagwörter:
-
Datenquelle:
Inhaltsverzeichnis – Band 13, Ausgabe 2
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-
Solid source molecular‐beam epitaxial growth of Ga0.5In0.5P using a valved, three‐zone phosphorus sourceHoke, W. E. / Weir, D. G. / Lemonias, P. J. / Hendriks, H. T. / Jackson, G. S. / Colombo, P. et al. | 1995
- 736
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Molecular‐beam epitaxial growth of GaxIn1−xP–GaAs (x∼0.5) double heterojunction laser diodes using solid phosphorus and arsenic valved cracking cellsBaillargeon, J. N. / Cho, A. Y. et al. | 1995
- 739
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Linear motion oven for variable incident group III fluxJones, C. R. / Beasley, D. L. / Taylor, E. N. / Evans, K. R. / Solomon, J. S. et al. | 1995
- 742
-
In situ pyrometric interferometry monitoring and control of III–V layered structures during molecular‐beam epitaxy growthLiu, X. / Ranalli, E. / Sato, D. L. / Li, Y. / Lee, H. P. et al. | 1995
- 746
-
Molecular‐beam epitaxy growth of II–VI light‐emitting devices on GaAs substrates using valved sources for S and SeJohnson, M. A. L. / Yu, Z. / Cook, J. W. / Schetzina, J. F. et al. | 1995
- 750
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Operation and device applications of a valved‐phosphorus cracker in solid‐source molecular‐beam epitaxyChin, T. P. / Chang, J. C. P. / Woodall, J. M. / Chen, W. L. / Haddad, G. I. / Parks, C. / Ramdas, A. K. et al. | 1995
- 754
-
High resolution x‐ray diffraction studies of AlGaP grown by gas‐source molecular‐beam epitaxyBi, W. G. / Deng, F. / Lau, S. S. / Tu, C. W. et al. | 1995
- 758
-
Low resistivity vertical‐cavity surface emitting lasers grown by molecular‐ beam epitaxy using sinusoidal‐composition grading in mirrors and in situ nonalloyed ohmic contactsHong, M. / Vakhshoori, D. / Mannaerts, J. P. / Hsieh, Y.‐F. et al. | 1995
- 762
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Yellow (5735 Å) emission GaInP multiple quantum well lasers grown by gas source molecular‐beam epitaxyChen, A. C. / Moy, A. M. / Cheng, K. Y. et al. | 1995
- 765
-
Molecular‐beam epitaxy growth of multiple‐wavelength mirrors and applications for a dual‐wavelength resonant‐cavity photodetectorSrinivasan, A. / Murtaza, S. / Anselm, K. / Shih, Y. C. / Campbell, J. C. / Streetman, B. G. et al. | 1995
- 768
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Novel GaAs photodetector with gain for long wavelength detectionHarmon, E. S. / McInturff, D. T. / Melloch, M. R. / Woodall, J. M. et al. | 1995
- 771
-
GaAs and InP selective molecular‐beam epitaxyStreit, Dwight C. / Block, Thomas R. / Han, An‐Chich / Wojtowicz, Michael / Umemoto, Donald K. / Kobayashi, Kevin / Oki, Aaron K. / Liu, Po‐Hsin / Lai, Richard / Ng, Geok I. et al. | 1995
- 774
-
Graded‐channel InGaAs–InAlAs–InP high electron mobility transistorsStreit, Dwight C. / Block, Thomas R. / Wojtowicz, Michael / Pascua, Dimas / Lai, Richard / Ng, Geok I. / Liu, Po‐Hsin / Tan, Kin L. et al. | 1995
- 777
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Nondestructive characterization of pseudomorphic high‐electron‐mobility transistor structures using x‐ray diffraction and reflectivityRogers, T. J. / Ballingall, J. M. / Larsen, M. / Hall, E. L. et al. | 1995
- 782
-
Molecular‐beam epitaxial growth of high quality InSb for p‐i‐n photodetectorsSingh, G. / Michel, E. / Jelen, C. / Slivken, S. / Xu, J. / Bove, P. / Ferguson, I. / Razeghi, M. et al. | 1995
- 786
-
Ultrathin nitride layers grown by molecular‐beam epitaxy and their effects on interface states in silicon metal–insulator–semiconductor field‐effect transistorsFayfield, R. T. / Chen, J. / Hagedorn, M. S. / Higman, T. K. / Moy, A. M. / Cheng, K. Y. et al. | 1995
- 789
-
Approach to obtain high quality GaN on Si and SiC‐on‐silicon‐on‐insulator compliant substrate by molecular‐beam epitaxyYang, Z. / Guarin, F. / Tao, I. W. / Wang, W. I. / Iyer, S. S. et al. | 1995
- 792
-
Influence of substrate electrical bias on the growth of GaN in plasma‐assisted epitaxyBeresford, R. / Ohtani, A. / Stevens, K. S. / Kinniburgh, M. et al. | 1995
- 796
-
Growth and characterization of GaN on sapphire (0001) using plasma‐assisted ionized source beam epitaxyKim, K. / Yoo, M. C. / Shim, K. H. / Verdeyen, J. T. et al. | 1995