Spectroscopic studies of carbon impurities in PISCES‐A (Englisch)
- Neue Suche nach: Ra, Y.
- Neue Suche nach: Pospieszczyk, A.
- Neue Suche nach: Hirooka, Y.
- Neue Suche nach: Leung, W. K.
- Neue Suche nach: Conn, R. W.
- Neue Suche nach: Ra, Y.
- Neue Suche nach: Pospieszczyk, A.
- Neue Suche nach: Hirooka, Y.
- Neue Suche nach: Leung, W. K.
- Neue Suche nach: Conn, R. W.
In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
;
8
, 3
;
1783-1789
;
1990
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Spectroscopic studies of carbon impurities in PISCES‐A
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Weitere Titelangaben:Spectroscopic studies of carbon impurities
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Beteiligte:Ra, Y. ( Autor:in ) / Pospieszczyk, A. ( Autor:in ) / Hirooka, Y. ( Autor:in ) / Leung, W. K. ( Autor:in ) / Conn, R. W. ( Autor:in )
-
Erschienen in:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films ; 8, 3 ; 1783-1789
-
Verlag:
- Neue Suche nach: American Vacuum Society
-
Erscheinungsdatum:01.05.1990
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Format / Umfang:7 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:CARBON , IMPURITIES , HYDROCARBONS , CARBON OXIDES , MOLECULES , ATOMS , ENERGY SPECTRA , BREAKUP REACTIONS , PLASMA , GRAPHITE , EROSION , SPECTROSCOPY , C
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Datenquelle:
Inhaltsverzeichnis – Band 8, Ausgabe 3
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- 1969
-
Molecular‐beam study of gas‐surface chemistry in the ion‐assisted etching of silicon with atomic and molecular hydrogen and chlorineChuang, Mei‐Chen / Coburn, J. W. et al. | 1990
- 1977
-
Initial stages of heterojunction formation: Si on GaAs(111)González, M. L. / Soria, F. / Alonso, M. et al. | 1990
- 1983
-
Synchrotron radiation photoemission study of the formation of the Ag/GaSb(110) interfaceMao, D. / Soonckindt, L. / Kahn, A. / Terrasi, A. / Margaritondo, G. et al. | 1990
- 1988
-
Overlayer morphology and metallicity: Formation of In/GaSb(110) barriers at room and low temperatureLü, Z. M. / Mao, D. / Soonckindt, L. / Kahn, A. et al. | 1990
- 1993
-
X‐ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy studies of the effects of Ni layer on AuGe/GaAs(100) interfaceFang, C. S. Ares / Chang, Y. L. / Tse, W. S. et al. | 1990
- 2000
-
Adsorption of tin on the (111) and (100) silicon and germanium surfaces: A theoretical studyToscano, M. / Russo, N. et al. | 1990
- 2004
-
Minority carrier diffusion length of p‐GaAs determined by time‐of‐flightKeyes, B. M. / Dunlavy, D. J. / Ahrenkiel, R. K. / Asher, S. E. / Partain, L. D. / Liu, D. D. / Kuryla, M. S. et al. | 1990
- 2009
-
Silicon migration during the molecular beam epitaxy of delta‐doped GaAs and Al0.25Ga0.75AsLanzillotto, A‐M. / Santos, M. / Shayegan, M. et al. | 1990
- 2012
-
Effects of annealing and surface preparation on the properties of polycrystalline CdZnTe films grown by molecular beam epitaxyRingel, S. A. / Sudharsanan, R. / Rohatgi, A. / Owens, M. S. / Gillis, H. P. et al. | 1990
- 2020
-
X‐ray absorption of As low‐energy ion implanted into Si(100) grown by molecular‐beam epitaxyTyliszczak, T. / Hitchcock, A. P. / Jackman, T. E. et al. | 1990
- 2025
-
Microcorrosion of Al–Cu and Al–Cu–Si alloys: Interaction of the metallization with subsequent aqueous photolithographic processingWeston, D. / Wilson, S. R. / Kottke, M. et al. | 1990
- 2033
-
Growth structure of excited oxygen on GaAs(111) surfacesAlonso, M. / Soria, F. / González, M. L. et al. | 1990
- 2039
-
Substrate temperature dependence of subcutaneous oxidation at Si/SiO2 interfaces formed by remote plasma‐enhanced chemical vapor depositionKim, S. S. / Stephens, D. J. / Lucovsky, G. / Fountain, G. G. / Markunas, R. J. et al. | 1990
- 2046
-
X‐ray reflectivity study of SiO2 on SiHeald, S. M. / Jayanetti, J. K. D. / Bright, A. A. / Rubloff, G. W. et al. | 1990
- 2049
-
Electrical and structural characterization of Mo/Si contact to n‐GaAsKulkarni, A. K. / Patkar, M. P. et al. | 1990
- 2055
-
CdTe(110) interface formation with reactive and nonreactive overlayers: Al, Ti, Pd, Ag, Au, In, and CeTrafas, B. M. / Meyer, H. M. / Aldao, C. M. / Siefert, R. L. / Vos, M. / Xu, F. / Weaver, J. H. et al. | 1990
- 2062
-
Surface termination of epitaxial NiAl on GaAs(001) by x‐ray photoelectron diffractionChambers, S. A. et al. | 1990
- 2068
-
Adsorption geometry and overlayer morphology in the formation of interfaces between metals and (110) III–V surfacesStevens, K. / Soonckindt, L. / Kahn, A. et al. | 1990
- 2074
-
Schottky barrier height and thermal stability of the NiAl/n‐Ge/GaAs(001) interfaceChambers, S. A. / Loebs, V. A. et al. | 1990
- 2079
-
Backside secondary ion mass spectrometry investigation of ohmic and Schottky contacts on GaAsSchwarz, S. A. / Palmstro/m, C. J. / Schwartz, C. L. / Sands, T. / Shantharama, L. G. / Harbison, J. P. / Florez, L. T. / Marshall, E. D. / Han, C. C. / Lau, S. S. et al. | 1990
- 2084
-
‘‘Pinning’’ and Fermi level movement at GaAs surfaces and interfacesSpicer, W. E. / Newman, N. / Spindt, C. J. / Liliental‐Weber, Z. / Weber, E. R. et al. | 1990
- 2090
-
The interface state study of TaSix/GaAs Schottky barrierKao, C. H. / Huang, F. S. / Chen, Jiann‐Ruey et al. | 1990
- 2096
-
Scanning Auger electron spectroscopy of the fiber/matrix interface of SiC fiber/silicate glass matrix compositesLaube, Bruce L. / Brennan, John J. et al. | 1990
- 2101
-
Characterization of interfacial failure in SiC reinforced Si3N4 matrix composite material by both fiber push‐out testing and Auger electron spectroscopyEldridge, J. I. / Honecy, F. S. et al. | 1990
- 2107
-
Surface science studies on the Ni/Al2O3 interfaceZhong, Q. / Ohuchi, F. S. et al. | 1990
- 2113
-
Stresses in sputter deposited thick coatings of chromium and zirconium diboride on polymeric compositesChambers, D. L. / Wan, C. T. / Taylor, K. A. / Susi, G. T. et al. | 1990
- 2118
-
Studies in modified polybismaleimide resins and its composite materialsXiaoming, Yang / Luxia, Jiang / Meili, Xie / Xingxian, Cai et al. | 1990
- 2124
-
An investigation of electromagnetic field patterns during microwave plasma diamond thin film depositionZhang, J. / Huang, B. / Reinhard, D. K. / Asmussen, J. et al. | 1990
- 2129
-
Intermediate layers for the deposition of polycrystalline diamond filmsHartnett, T. / Miller, R. / Montanari, D. / Willingham, C. / Tustison, R. et al. | 1990
- 2137
-
Oxidation kinetics of diamond, graphite, and chemical vapor deposited diamond films by thermal gravimetryJoshi, A. / Nimmagadda, R. / Herrington, J. et al. | 1990
- 2143
-
Diamond‐like carbon films grown by a large‐scale direct current plasma chemical vapor deposition reactor: System design, film characteristics, and applicationsHam, M. / Lou, Karen A. et al. | 1990
- 2150
-
The role of ion‐assisted deposition in the formation of diamond‐like carbon filmsAisenberg, Sol et al. | 1990
- 2155
-
Ion‐assisted deposition effects on the surface structure of a TiO2 thin filmVarnier, F. et al. | 1990
- 2160
-
The anodic vacuum arc and its application to coatingEhrich, H. / Hasse, B. / Mausbach, M. / Müller, K. G. et al. | 1990
- 2165
-
Effects of nitrogen pulsing on sputter‐deposited beryllium filmsHsieh, E. J. / Price, C. W. / Pierce, E. L. / Wirtenson, R. G. et al. | 1990
- 2169
-
Structure and property correlation of plasma source ion implanted layers in Monel K‐500 alloyMadapura, M. / Dodd, R. A. / Conrad, J. R. / Plantz, D. / Worzala, F. J. et al. | 1990
- 2173
-
Changes in hydrophobic properties of glass surfaces by ion implantationOhwaki, Takeshi / Taga, Yasunori et al. | 1990
- 2197
-
Formalism for quantitative surface analysis by electron spectroscopyTougaard, S. et al. | 1990
- 2204
-
Estimation of film thickness from the background signal in x‐ray photoemission spectroscopyOgama, T. / Horikawa, T. et al. | 1990
- 2209
-
Chemical imaging using ion microscopy and digital image processingMantus, David S. / Morrison, George H. et al. | 1990
- 2213
-
Material dependence of electron inelastic mean free paths at low energiesTanuma, S. / Powell, C. J. / Penn, D. R. et al. | 1990
- 2217
-
Information from electron spectra: Numerical analysis compared with high‐energy resolutionStickle, W. F. / Watson, D. G. / Moulder, J. F. et al. | 1990
- 2221
-
Automated peak identification applied to Auger electron spectroscopyBumgarner, S. / Hofmeister, S. / Griffis, D. / Russell, P. et al. | 1990
- 2226
-
Electron energy‐loss spectral analysis of diamond and diamond‐like carbon filmsWang, Yaxin / Hoffman, R. W. / Angus, John C. et al. | 1990
- 2231
-
Evidence of SiOx suboxides at Ar ion etched silica surfacesPaparazzo, E. / Fanfoni, M. / Quaresima, C. / Perfetti, P. et al. | 1990
- 2236
-
Electron trapping characterization by Auger electron spectroscopy in silicon oxynitride thin filmde Castro, A. J. / Fernandez, M. / Sacedon, J. L. et al. | 1990
- 2241
-
Auger crater‐edge profiling of multilayer thin films by scanning Auger spectroscopyWang, Y. X. / Cui, Y. D. / Chen, Z. G. / Lambers, Eric / Holloway, Paul H. et al. | 1990
- 2246
-
Effect of surface roughening on secondary ion yields and erosion rates of silicon subject to oblique oxygen bombardmentWittmaack, K. et al. | 1990
- 2251
-
Analysis of iridium–aluminum thin films by x‐ray photoelectron spectroscopy and Rutherford backscattering spectroscopyAnderson, D. R. / Lampert, J. K. / Mishra, A. / Wu, H. Z. / Unruh, K. et al. | 1990
- 2255
-
Alloy source synthesis for vapor deposition by electrodischarge compaction and analysis of Ni–Co alloy films deposited on siliconSethuraman, A. R. / Reucroft, P. J. / De Angelis, R. J. / Kim, D. K. / Okazaki, K. et al. | 1990
- 2258
-
Angular distribution of ions from a AuSi liquid metal ion sourceRao, S. / Bell, A. E. / Schwind, G. A. / Swanson, L. W. et al. | 1990
- 2265
-
A new experimental method for determining secondary ion yields from surfaces bombarded by complex heterogeneous ionsBlain, M. G. / Della‐Negra, S. / Joret, H. / Le Beyec, Y. / Schweikert, E. A. et al. | 1990
- 2269
-
The interaction of a fluorinated ether with a metal surface: Effects of surface morphology and water coadsorptionLeavitt, P. K. / Thiel, P. A. et al. | 1990
- 2274
-
Surface characterization of a poly(styrene/p‐hydroxystyrene) copolymer series using x‐ray photoelectron spectroscopy, static secondary ion mass spectrometry, and chemical derivatization techniquesChilkoti, Ashutosh / Castner, David G. / Ratner, Buddy D. / Briggs, David et al. | 1990
- 2283
-
Quantitative aspects of secondary ion mass spectrometry analysis of pure and mixed fatty acid Langmuir–Blodgett filmsCornelio, Paula A. / Gardella, Joseph A. et al. | 1990
- 2287
-
Optimization of primary beam conditions for secondary ion mass spectrometry depth profiling of shallow junctions in silicon using the Perkin–Elmer 6300Lee, J. J. / Fulghum, J. E. / McGuire, G. E. / Ray, M. A. / Osburn, C. M. / Linton, R. W. et al. | 1990
- 2295
-
Depth profiling of polymer thin films by infrared spectroscopyMcClure, D. J. / Ouderkirk, A. J. / Hill, J. B. / Dunn, D. S. et al. | 1990
- 2300
-
Surface studies of polyether–polyester copolymers and blendsBurrell, Michael C. / Bhatia, Qamar S. / Chera, John J. / Michael, Raj S. et al. | 1990
- 2306
-
Biomolecules and surfacesRatner, Buddy D. / Castner, David G. / Horbett, Thomas A. / Lenk, Thomas J. / Lewis, Kenneth B. / Rapoza, Richard J. et al. | 1990
- 2318
-
Sputter‐initiated resonance ionization spectroscopy: A matrix‐independent sub‐parts‐per‐billion sensitive technique applied to diffusion studies in SiO2–InP interfacesArlinghaus, H. F. / Spaar, M. T. / Thonnard, N. et al. | 1990
- 2323
-
Optimization of primary beam conditions for secondary ion mass spectrometry depth profiling of shallow junctions in silicon using a Cameca IMS‐3fHunter, J. L. / Corcoran, S. F. / Griffis, D. P. / Osburn, C. M. et al. | 1990
- 2329
-
Surface studies of Os/Re/W alloy‐coated impregnated tungsten cathodesAres Fang, C. S. / Maloney, C. E. et al. | 1990
- 2333
-
Effective thermionic work function measurements of zirconium carbide using a computer‐processed image of a thermionic projection microscope patternMackie, William A. / Hinrichs, Clarence H. / Cohen, Ira M. / Alin, John S. / Schnitzler, Don T. / Carleson, Pete / Ginn, Robert / Krueger, Peter / Vetter, Catharine G. / Davis, Paul R. et al. | 1990
- 2338
-
A variable temperature x‐ray photoelectron spectroscopic study of the surface conversion of diethylaluminum azide to AlNSchulze, R. K. / Boyd, D. C. / Evans, J. F. / Gladfelter, W. L. et al. | 1990
- 2344
-
e−‐beam deposition of tetragonal ZrO2 films stabilized with alumina and scandiaQadri, S. B. / Skelton, E. F. / Harford, M. / Lubitz, P. / Aprigliano, L. et al. | 1990
- 2347
-
Preparation of well‐ordered, oxygen‐rich SnO2(110) surfaces via oxygen plasma treatmentCavicchi, R. / Tarlov, M. / Semancik, S. et al. | 1990
- 2353
-
Electron spectroscopic identification of carbon species formed during diamond growthBelton, David N. / Schmieg, Steven J. et al. | 1990
- 2363
-
Polyimide/Cr/Cu in the presence of chloride ionsKatnani, A. D. / Spalik, J. / Rands, B. / Baldwin, J. et al. | 1990
- 2366
-
Oxidation and diffusion in the formation of sequential‐diffusion brass coatings on steelHammer, G. E. / Starinshak, T. W. / Shemenski, R. M. et al. | 1990
- 2370
-
The interaction of the polyimide precursors PMDA (1,2,4,5‐benzenetetracarboxylic anhydride) and m‐PDA (1,3‐phenylenediamine) with Ni(110)Jones, T. S. / Ashton, M. R. / Richardson, N. V. / Mack, R. G. / Unertl, W. N. et al. | 1990
- 2376
-
A study of modified polyimide surfaces as related to adhesionFlitsch, R. / Shih, D‐Y. et al. | 1990
- 2382
-
CF4/O2 plasma etching and surface modification of polyimide films: Time‐dependent surface fluorination and fluorination modelScott, P. M. / Matienzo, L. J. / Babu, S. V. et al. | 1990
- 2388
-
Purity and thickness analysis of fluoropolymers by static secondary ion mass spectrometryNewman, J. G. / Viswanathan, K. V. et al. | 1990
- 2393
-
Friction studies of ‘‘clean’’ and oxygen exposed Fe surfaces in ultrahigh vacuumDeKoven, Benjamin M. / Hagans, Patrick L. et al. | 1990
- 2401
-
Fracto‐emission during the interfacial failure of a metal–oxide‐semiconductor system: Au–SiO2–SiDoering, D. L. / Dickinson, J. T. / Langford, S. C. / Xiong‐Skiba, P. et al. | 1990
- 2407
-
Surface analysis of the adhesive bond between various Cu, Sn, and Fe bronze alloys and rubberStout, D. A. / Rife, R. J. et al. | 1990
- 2412
-
Oxygen concentration on surfaces of carbon fibersLin, Sin‐Shong et al. | 1990
- 2417
-
X‐ray photoelectron spectroscopy and ellipsometry studies of the electrochemically controlled adsorption of benzotriazole on copper surfacesCohen, S. L. / Brusic, V. A. / Kaufman, F. B. / Frankel, G. S. / Motakef, S. / Rush, B. et al. | 1990
- 2425
-
Toward understanding photoemission in K+CO coadsorption systemsSchultz, Peter A. et al. | 1990
- 2431
-
Ethylene oxide adsorption on K‐modified Ni(111): Thermal stabilization and dissociationNieber, Bärbel / Benndorf, Carsten et al. | 1990
- 2435
-
Surface chemistry of monolayer metallic films on Re(0001) and Mo(110)He, J.‐W. / Shea, W.‐L. / Jiang, X. / Goodman, D. W. et al. | 1990
- 2445
-
Kinetics of dissociative chemisorption of methane and ethane on Pt(110)‐(1×2)Sun, Y.‐K. / Weinberg, W. H. et al. | 1990
- 2449
-
Anomalous nitrogen‐metal bonding on Cr(110) and Cr/W(110) overlayersShinn, N. D. / Tsang, K.‐L. et al. | 1990
- 2454
-
The interaction of water with Pd(110)Brosseau, R. / Ellis, T. H. / Morin, M. et al. | 1990
- 2458
-
Dynamics of the interaction of ethane with Ir(110)‐(1×2)Mullins, C. B. / Weinberg, W. H. et al. | 1990
- 2463
-
A new kinetic theory for thermal desorption of two‐dimensional islandsSlavin, A. J. / Young, D. P. B. et al. | 1990
- 2468
-
Thermal desorption from coexisting phases: H/Mo(100)Meyer, J. A. / Baikie, I. D. / Lopinski, G. P. / Prybyla, J. A. / Estrup, P. J. et al. | 1990
- 2474
-
High‐resolution low‐energy electron diffraction study of Pt(110)(1×2) to (1×1) phase transitionZuo, J.‐K. / He, Y.‐L. / Wang, G.‐C. / Felter, T. E. et al. | 1990
- 2481
-
The role of carbon in the faceting of silicon surfaces on the (111) to (001) azimuthYang, Yu‐Nong / Williams, Ellen D. et al. | 1990
- 2489
-
X‐ray photoelectron diffraction study of surface disordering of Pb(110)Breuer, U. / Knauff, O. / Bonzel, H. P. et al. | 1990
- 2494
-
Probing bimetallic surfaces with photoelectron diffraction: Au/Cu(001) and Fe/Cu(001)Tobin, J. G. / Hansen, J. C. / Wagner, M. K. et al. | 1990
- 2497
-
Impact collision ion spectrometry studies of the NiSi2(111) surfacePorter, T. L. / Cornelison, D. M. / Chang, C. S. / Tsong, I. S. T. et al. | 1990
- 2501
-
Ion scattering studies of clean Nb(110) surfaces before and after exposure to hydrogenMingde, Xu / Whang, C. N. / Smith, R. J. et al. | 1990
- 2507
-
Surface roughening of Ge(001) during 200 eV Xe ion bombardment and Ge molecular beam epitaxyChason, E. / Tsao, J. Y. / Horn, K. M. / Picraux, S. T. / Atwater, H. A. et al. | 1990
- 2512
-
Temperature programmed desorption of Bi on Ni(100)Jones, Mark E. / Heitzinger, John M. / Smith, Randall J. / Koel, Bruce E. et al. | 1990
- 2517
-
Elimination of the secondary electron background in Auger electron spectroscopy using low energy positron excitationWeiss, Alex / Mehl, David / Koymen, Ali R. / Lee, K. H. / Lei, Chun et al. | 1990
- 2521
-
A high yield LiF monochromator system for inverse photoemission spectroscopyChilds, T. T. / Lindau, I. et al. | 1990
- 2524
-
X‐ray photoelectron spectroscopy study of electron stimulated reactions in oxidized GaAs(1̄1̄1̄)Sacedon, J. L. / Lopez de Ceballos, I. / Muñoz, M. C. et al. | 1990
- 2528
-
Studies on reaction mechanisms of methanation of CO on nickel with a molecular beamXi, Guangkang / Liu, Jian / Li, Shenglin / He, Tianxi et al. | 1990
- 2534
-
Sputtering of Ni+ from polycrystalline Ni with adsorbed hydrogen or oxygen: A secondary ion mass spectrometry studyShenasa, Mohsen / Lichtman, David et al. | 1990
- 2538
-
Kinetics of physical adsorption of ethane on Ir(110)‐(1×2): Molecular beam reflectivity measurements and Monte Carlo simulationsKang, H. C. / Mullins, C. B. / Weinberg, W. H. et al. | 1990
- 2543
-
The behavior of CO phases on Rh(110) under static pressuresWeimer, J. J. / Loboda‐Cackovic, J. / Block, J. H. et al. | 1990
- 2548
-
Adsorption energetics: First principles calculations of adatom interactions and induced local lattice relaxationFeibelman, Peter J. et al. | 1990
- 2552
-
Near‐edge electron energy loss fine structure: Core excitation of chemisorbed molecules in the laboratoryTyliszczak, T. / Hitchcock, A. P. et al. | 1990
- 2557
-
Coadsorption of bismuth with electrocatalytic molecules: A study of formic acid oxidation on Pt(100)Kizhakevariam, N. / Stuve, E. M. et al. | 1990
- 2563
-
The photoemission spectromicroscope multiple‐application x‐ray imaging undulator microscope (maximum)Ng, W. / Ray‐Chaudhuri, A. K. / Crossley, S. / Crossley, D. / Gong, C. / Guo, J. / Hansen, R. / Margaritondo, G. / Cerrina, F. / Underwood, J. et al. | 1990
- 2566
-
X‐ray absorption near edge structures of intermediate oxidation states of silicon in silicon oxides during thermal desorptionHarp, G. R. / Han, Z. L. / Tonner, B. P. et al. | 1990
- 2570
-
Synchrotron radiation photoionization of sputtered neutralsOshima, Masaharu / Maeyama, Satoshi / Kawamura, Tomoaki / Maruo, Tetsuya / Nagai, Kazutoshi et al. | 1990
- 2576
-
Interaction of oxygen and CO with Ni3Ti alloy surfacesPetri, A. / Neumann, A. / Küppers, J. et al. | 1990
- 2581
-
Adsorption of atomic oxygen (N2O) on a clean Ge(001) surfaceZandvliet, H. J. W. / Keim, E. G. / van Silfhout, A. et al. | 1990
- 2585
-
Chemisorption of high coverages of atomic oxygen on the Pt(111), Pd(111), and Au(111) surfacesParker, Deborah Holmes / Koel, Bruce E. et al. | 1990
- 2591
-
Auger and x‐ray absorption studies of solid molecular oxygenChen, Jie / Lin, C. L. / Qiu, S. L. / Strongin, Myron / denBoer, M. L. et al. | 1990
- 2595
-
The formation of metal–oxygen species at low temperaturesQiu, S. L. / Lin, C. L. / Chen, Jie / Strongin, Myron et al. | 1990
- 2599
-
Methanol decomposition on single crystal Cu2OCox, David F. / Schulz, Kirk H. et al. | 1990
- 2605
-
The effect of lateral interactions on the thermal desorption of N2 from Ni(100)Varma, Shikha / Dowben, P. A. et al. | 1990
- 2610
-
The adsorption and decomposition of ethylene on Pt(210), (1×1)Pt(110), and (2×1)Pt(110)Yagasaki, E. / Backman, A. L. / Masel, R. I. et al. | 1990
- 2616
-
The coadsorption of ethylene and hydrogen on Pt(210), (1×1)Pt(110), and (2×1)Pt(110)Yagasaki, E. / Backman, A. L. / Chen, B. / Masel, R. I. et al. | 1990
- 2622
-
Infrared study of high pressure and high temperature coadsorption of CO and H2 on clean and on carbided Ni(100)Glass, A. S. / Bermudez, V. M. et al. | 1990
- 2627
-
Surface dynamics of NaCl(001) by inelastic He atom scatteringSafron, S. A. / Brug, W. P. / Chern, G. / Duan, J. / Skofronick, J. G. / Manson, J. R. et al. | 1990
- 2632
-
Surface phonon modes of the NaI(001) crystal surface by inelastic He atom scatteringBrug, W. P. / Chern, G. / Duan, J. / Safron, S. A. / Skofronick, J. G. / Benedek, G. et al. | 1990
- 2637
-
Auger electron spectroscopy as a method of surface potential barrier studyKlyachko, D. V. / Kriegel, V. G. et al. | 1990
- 2644
-
CO on NaCl(100): Model system for investigating vibrational energy flowChang, Huan‐Cheng / Noda, Chifuru / Ewing, George E. et al. | 1990
- 2649
-
Detection of odd symmetry shear modes at metal surfaces by inelastic electron scattering: Experiment and theoryErskine, J. L. / Jeong, E.‐J. / Yater, J. / Chen, Y. / Tong, S. Y. et al. | 1990
- 2653
-
Determination of two‐dimensional crystal structures by infrared spectroscopyBerg, Otto / Ewing, George et al. | 1990
- 2658
-
The effect of external stress on Si surfacesWebb, M. B. / Men, F. K. / Swartzentruber, B. S. / Lagally, M. G. et al. | 1990
- 2662
-
Investigation by thermal energy atom scattering of the (2×1) clean Si(100) surface and of the C(8×8) and (2×8) reconstructions induced by copperBarbier, L. / Lapujoulade, J. et al. | 1990
- 2667
-
Observation of surface and interface optical phonons in ZnSe/GaAs(110) heterostructure by high‐resolution electron‐energy‐loss spectroscopyMeng, Yuan / Nelson, M. M. / Anderson, J. / Lapeyre, G. J. et al. | 1990
- 2671
-
Confirmation of an exception to the ‘‘general rule’’ of surface relaxationsNoonan, J. R. / Davis, H. L. et al. | 1990
- 2677
-
CO adsorption on stepped Ni(111) surfacesBenndorf, Carsten / Meyer, Lutz et al. | 1990
- 2682
-
Characterization of Rh films on Ta(110)Jiang, L. Q. / Ruckman, M. W. / Strongin, Myron et al. | 1990
- 2687
-
Characterization of the n=1 image state on Ni(111) with two‐photon photoemissionHamza, Alex V. / Kubiak, Glenn D. et al. | 1990
- 2692
-
Orientation in molecule surface dynamicsKuipers, E. W. / Tenner, M. G. / Kleyn, A. W. / Stolte, S. et al. | 1990
- 2699
-
Molecular beam studies of trapping dynamicsRettner, C. T. / Mullins, C. B. / Bethune, D. S. / Auerbach, D. J. / Schweizer, E. K. / Weinberg, W. H. et al. | 1990
- 2705
-
Charge–transfer screening and the dynamics of electronically stimulated adsorbate dissociation and desorptionBurns, A. R. / Jennison, D. R. / Stechel, E. B. et al. | 1990
- 2710
-
Photon‐stimulated desorption studies of SiF4 adsorbed on Si(111)(7×7)Wen, C.‐R. / Rosenberg, R. A. et al. | 1990
- 2714
-
Numerical studies of epitaxial kinetics: What can computer simulation tell us about nonequilibrium crystal growth?Das Sarma, S. et al. | 1990
- 2727
-
Perpendicular surface magnetic anisotropy in ultrathin epitaxial Fe filmsLiu, C. / Bader, S. D. et al. | 1990
- 2732
-
Temperature‐dependent effects during Ag deposition on Cu(110)Taylor, T. N. / Muenchausen, R. E. / Hoffbauer, M. A. / Denier van der Gon, A. W. / van der Veen, J. F. et al. | 1990
- 2738
-
The chemistry of the gadolinium–nickel interfaceLaGraffe, D. / Dowben, P. A. / Onellion, M. et al. | 1990
- 2743
-
Low‐temperature adsorption of oxygen on Si(111)Silvestre, C. / Hladky, J. / Shayegan, M. et al. | 1990
- 2747
-
Chemical titration of clean silicon surfaces with N2O and O2: Atomic nature of ‘‘5×1’’ reconstructed Si(110)Keim, Enrico G. / Wormeester, Herbert / van Silfhout, Arend et al. | 1990
- 2755
-
Surface defects, gap states, and low‐energy modes of degenerately doped n‐GaAs(110)Kilday, D. G. / Margaritondo, G. / Lapeyre, G. J. et al. | 1990
- 2761
-
Two‐stage vacuum pumps for high working pressures and high water vapor tolerancesKaiser, Winfried et al. | 1990
- 2764
-
Prevention of oil vapor backstreaming in vacuum systems by gas purge methodTsutsumi, Y. / Ueda, S. / Ikegawa, M. / Kobayashi, J. et al. | 1990
- 2768
-
High throughput tandem turbomolecular pump for extreme high vacuumEnosawa, H. / Urano, C. / Kawashima, T. / Yamamoto, M. et al. | 1990
- 2772
-
Reliability of turbomolecular vacuum pumps: A comparison of rolling element and magnetic bearing systemsHeldner, M. / Kabelitz, H.‐P. et al. | 1990
- 2778
-
Factors affecting cryopump base pressurede Rijke, Johan E. et al. | 1990
- 2782
-
Topics in vacuum system gas flow applicationsSanteler, Donald J. et al. | 1990
- 2790
-
Controllable leaks using electrically pulsed valvesDobson, J. L. / Kendall, B. R. F. et al. | 1990
- 2795
-
Leak detection in 10−13 Torr aluminum vacuum systemsWatanabe, Fumio / Ishimaru, Hajime et al. | 1990
- 2798
-
Large‐area industrial vacuum coating in the 1990’sJohansen, Paul R. et al. | 1990
- 2802
-
Pressure‐dependent damping of a particle levitated in vacuumHinkle, L. D. / Kendall, B. R. F. et al. | 1990
- 2806
-
The influence of the magnetic field strength upon the characteristic curve of a cold cathode ionization gaugePeacock, N. T. / Peacock, R. N. et al. | 1990
- 2810
-
Residual gas analysis: Past, present, and futureLichtman, David et al. | 1990
- 2814
-
Ultrasensitive detection of residual gases by multiphoton ionization mass spectrometryChien, Ring‐Ling / Sogard, Michael R. et al. | 1990
- 2817
-
Improved technique for measuring the vapor pressure of vacuum‐compatible fluidsLaurenson, L. / Troup, A. P. et al. | 1990
- 2822
-
A trace gas mass spectrometer for on‐line monitoring of sputter processes at 10−2 mbar without pressure reductionMüller, N. / Rettinghaus, G. / Strasser, G. et al. | 1990
- 2826
-
Vacuum system design and fabrication of electron storage ringsSchuchman, J. C. et al. | 1990
- 2836
-
Development of an aluminum alloy valve for an extremely high vacuum systemItoh, K. / Waragai, K. / Komuro, H. / Ishigaki, T. / Ishimaru, H. et al. | 1990
- 2840
-
Vacuum technology issues for the Superconducting Super ColliderJöstlein, H. et al. | 1990
- 2849
-
Chemical cleaning of aluminum alloy surfaces for use as vacuum material in synchrotron light sourcesKaufherr, N. / Krauss, A. / Gruen, D. M. / Nielsen, R. et al. | 1990
- 2856
-
Photon‐stimulated desorption yields from stainless steel and copper‐plated beam tubes with various pretreatmentsFoerster, C. L. / Halama, H. / Lanni, C. et al. | 1990
- 2860
-
Achievement of extreme high vacuum in the order of 10−10 Pa without baking of test chamberKato, S. / Aono, M. / Sato, K. / Baba, Y. et al. | 1990
- 2865
-
Hazardous gas handling in semiconductor processingKumagai, H. Y. et al. | 1990
- 2874
-
Operation of cryogenic vacuum pumps in severe environmentsLessard, P. A. et al. | 1990
- 2877
-
Applications of titanium sublimation traps to the scrubbing of reactive gasesHu, Yao‐Zhi et al. | 1990
- 2881
-
Tritium processing at the Savannah River Site: Present and futureOrtman, M. S. / Heung, L. K. / Nobile, A. / Rabun, R. L. et al. | 1990
- 2890
-
Tritium handling facility at KMS Fusion Inc.Bowman, Charles C. / Vis, Vincent A. et al. | 1990
- 2893
-
Behavior of Ar plasmas formed in a mirror field electron cyclotron resonance microwave ion sourceGorbatkin, S. M. / Berry, L. A. / Roberto, J. B. et al. | 1990
- 2900
-
Potential applications of an electron cyclotron resonance multicusp plasma sourceTsai, C. C. / Berry, L. A. / Gorbatkin, S. M. / Haselton, H. H. / Roberto, J. B. / Stirling, W. L. et al. | 1990
- 2904
-
Electric fields in a microwave‐cavity electron‐cyclotron‐resonant plasma sourceHopwood, J. / Wagner, R. / Reinhard, D. K. / Asmussen, J. et al. | 1990
- 2909
-
Electron cyclotron resonance plasmas excited by rectangular and circular microwave modesPopov, Oleg A. et al. | 1990
- 2913
-
Modeling of plasma flow downstream of an electron cyclotron resonance plasma sourceHussein, Makarem A. / Emmert, G. A. et al. | 1990
- 2919
-
Oxide growth on silicon using a microwave electron cyclotron resonance oxygen plasmaSalbert, G. T. / Reinhard, D. K. / Asmussen, J. et al. | 1990
- 2924
-
Oxidation of silicon in an electron cyclotron resonance oxygen plasma: Kinetics, physicochemical, and electrical propertiesCarl, D. A. / Hess, D. W. / Lieberman, M. A. et al. | 1990
- 2931
-
Distributed electron cyclotron resonance in silicon processing: Epitaxy and etchingBurke, Rudolf R. / Pelletier, J. / Pomot, C. / Vallier, L. et al. | 1990
- 2939
-
Near‐surface damage and contamination of silicon following electron cyclotron resonance etchingYapsir, A. S. / Fortuño‐Wiltshire, G. / Gambino, J. P. / Kastl, R. H. / Parks, C. C. et al. | 1990
- 2945
-
Etch characterization of a broad‐beam electron cyclotron resonance ion sourceGhanbari, E. / Nguyen, T. / Bui, S. / Ostan, E. et al. | 1990
- 2950
-
Novel semiconductors and heterostructuresCoon, D. D. et al. | 1990
- 2956
-
Kinetics and mechanics of Si2H6 surface decomposition on SiKulkarni, S. K. / Gates, S. M. / Greenlief, C. M. / Sawin, H. H. et al. | 1990
- 2960
-
Equilibrium surface hydrogen coverage during silicon epitaxy using SiH4Liehr, M. / Greenlief, C. M. / Offenberg, M. / Kasi, S. R. et al. | 1990
- 2965
-
Surface reactions in Si chemical vapor deposition from silaneGates, S. M. / Greenlief, C. M. / Kulkarni, S. K. / Sawin, H. H. et al. | 1990
- 2970
-
Modeling of the SiC chemical vapor deposition process and comparison with experimental resultsAnnen, K. D. / Stinespring, C. D. / Kuczmarski, M. A. / Powell, J. A. et al. | 1990
- 2976
-
Epitaxial growth of Al(100) on Si(100) by gas‐temperature‐controlled chemical vapor depositionSekiguchi, A. / Kobayashi, T. / Hosokawa, N. / Asamaki, T. et al. | 1990
- 2980
-
Delta doping of III–V compound semiconductors: Fundamentals and device applicationsSchubert, E. F. et al. | 1990
- 2997
-
Interdiffusion and conversion of InP/In0.53Ga0.47As superlattices induced by p‐type dopantsSchwarz, S. A. / Hwang, D. M. / Mei, P. / Schwartz, C. L. / Werner, J. / Stoffel, N. G. / Bhat, R. / Chen, C. Y. / Ravi, T. S. / Koza, M. et al. | 1990
- 3002
-
Recombination velocity of the Ga0.5In0.5P/GaAs interfaceAhrenkiel, R. K. / Olson, J. M. / Dunlavy, D. J. / Keyes, B. M. / Kibbler, A. E. et al. | 1990
- 3006
-
Amorphous Ta–Si–N thin‐film alloys as diffusion barrier in Al/Si metallizationsKolawa, E. / Molarius, J. M. / Nieh, C. W. / Nicolet, M.‐A. et al. | 1990
- 3011
-
High‐temperature effects on a CoSi2/poly‐Si metal oxide semiconductor gate configurationNygren, Stefan / Johansson, Stefan et al. | 1990
- 3014
-
Growth of CoSi2 on Si(001): Structure, defects, and resistivityJimenez, J. R. / Schowalter, L. J. / Hsiung, L. M. / Rajan, K. / Hashimoto, Shin / Thompson, R. D. / Iyer, S. S. et al. | 1990
- 3019
-
Thin SiC films as GaAs field effect transistor insulatorsSullivan, J. R. / Soukup, R. J. et al. | 1990
- 3026
-
An Auger electron spectroscopy study of the oxidation and mechanical degradation of Ta thin film protective overlayers at microelectronic solid/liquid interfacesGoho, S. Matts et al. | 1990
- 3033
-
Growth and morphology kinetics of adsorbate structures on siliconFeldman, L. C. / Zinke‐Allmang, M. et al. | 1990
- 3038
-
Si2Cl6 and Si2H6 adsorption on CaF2/Si(111)Terminello, L. J. / Himpsel, F. J. / McFeely, F. R. / McLean, A. B. et al. | 1990
- 3043
-
Ordering of metal overlayers on metal substrates studied using atom beam scatteringVidali, G. / Hutchings, C. W. / Dowben, P. A. / Karimi, M. / Moses, C. / Foresti, M. et al. | 1990
- 3048
-
Growth mode determinations for the epitaxial Cu/Pd(111)/mica and Pd/Cu(111)/mica thin film systemsOral, B. / Vook, R. W. et al. | 1990
- 3052
-
Vacuum pumping for inertial‐confinement‐fusion reactorsPitts, John H. / Patton, Howard G. et al. | 1990
- 3058
-
Wall conditioning and leak localization in the Advanced Toroidal FacilityLangley, R. A. / Glowienka, J. C. / Mioduszewski, P. K. / Murakami, M. / Rayburn, T. F. / Simpkins, J. E. / Schwenterly, S. W. / Yarber, J. L. et al. | 1990
- 3063
-
Electron assisted glow discharges for conditioning fusion tokamak devicesSchaubel, K. M. / Jackson, G. L. et al. | 1990
- 3067
-
Vacuum vessel system design for the compact ignition tokamakReddan, W. et al. | 1990
- 3074
-
Fast partial and total pressure measurements during tokamak dischargesBourque, G. / St. Germain, J. P. / Terreault, B. / Boucher, C. / Kalnavarns, J. / Lachambre, J. L. / Pacher, G. W. / Pacher, H. D. / Zuzak, W. et al. | 1990
- 3079
-
Cryosorption of helium on argon frost in Tokamak Fusion Test Reactor neutral beamlinesKamperschroer, J. H. / Cropper, M. B. / Dylla, H. F. / Garzotto, V. / Dudek, L. E. / Grisham, L. R. / Martin, G. D. / O’Connor, T. E. / Stevenson, T. N. / von Halle, A. et al. | 1990
- 3084
-
Helium pumping by argon frosting on a 4.5 K surfaceKim, Jinchoon / Schaubel, K. M. / Colleraine, A. P. et al. | 1990