Development of bilayer resists for deep‐ultraviolet and i‐line application (Englisch)
- Neue Suche nach: McKean, D. R.
- Neue Suche nach: Clecak, N. J.
- Neue Suche nach: Renaldo, A. F.
- Neue Suche nach: McKean, D. R.
- Neue Suche nach: Clecak, N. J.
- Neue Suche nach: Renaldo, A. F.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
;
9
, 6
;
3413-3417
;
1991
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Development of bilayer resists for deep‐ultraviolet and i‐line application
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Weitere Titelangaben:Bilayer resists for deep‐ultraviolet and i‐line application
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Beteiligte:
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Erschienen in:
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Verlag:
- Neue Suche nach: American Vacuum Society
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Erscheinungsdatum:01.11.1991
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Format / Umfang:5 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 9, Ausgabe 6
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 2733
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Oxidation sharpening of silicon tipsRavi, T. S. / Marcus, R. B. / Liu, D. et al. | 1991
- 2738
-
Desorption from oxide films made by plasma enhanced chemical vapor deposition using tetraethylorthosilicateTompkins, Harland G. / Grivna, Gordon / Cowden, William G. / Leathersich, Cathy et al. | 1991
- 2742
-
Influence of silicon nitride deposition conditions on the electrical properties of oxide‐nitride (ON) dielectrics on smooth and as‐deposited rugged polycrystalline siliconChan, Hiang C. / Mathews, Viju K. / Turner, Charles / Fazan, Pierre C. et al. | 1991
- 2747
-
Reactive‐ion etching of tungsten silicide using NF3 gas mixturesLee, Ru‐Liang / Terry, Fred L. et al. | 1991
- 2752
-
Detailed measurements and simplified modeling of wafer charging in different barrel reactor configurationsNamura, Takashi / Uchida, Hirofumi / Todokoro, Yoshihiro / Inoue, Morio et al. | 1991
- 2759
-
Thermodynamics of the homogeneous and heterogeneous decomposition of trimethylaluminum, monomethylaluminum, and dimethylaluminumhydride: Effects of scavengers and ultraviolet‐laser photolysisCarlsson, J.‐O. / Gorbatkin, S. / Lubben, D. / Greene, J. E. et al. | 1991
- 2771
-
Characteristics of silicon strip doping sources for molecular beam epitaxyKing, W. D. / Griffiths, G. J. / Giugni, Stephen et al. | 1991
- 2778
-
Novel method for measuring and analyzing surface roughness on semiconductor laser etched facetsHerrick, Robert W. / Sabo, Lori G. / Levy, Joseph L. et al. | 1991
- 2784
-
Temperature measurement during implantation at elevated temperatures (300–500 °C)Vandenabeele, Peter / Maex, Karen et al. | 1991
- 2788
-
Improving projection lithography image illumination by using sources far from the optical axisAsai, Satoru / Hanyu, Isamu / Hikosaka, Kohki et al. | 1991
- 2792
-
Novel indices characterizing resolution power of photoresist for half‐micron feature size photolithographyIto, Tetsuo / Okano, Sadao / Takahashi, Shigeru / Sugimoto, Aritoshi / Kadota, Kazuya et al. | 1991
- 2798
-
Anisotropic etching of GaAs using a hot Cl2 molecular beamOno, Tetsuo / Kashima, Hideo / Hiraoka, Susumu / Suzuki, Keizo / Jahnke, Andreas et al. | 1991
- 2802
-
Doping characteristics of Si into molecular‐beam epitaxially grown InAlAs layersHiguchi, M. / Ishikawa, T. / Imanishi, K. / Kondo, K. et al. | 1991
- 2805
-
Molecular beam epitaxy growth and physical characterization of precise, narrow, triangular heterostructures using an analog grading algorithmGiugni, Stephen / Tansley, T. L. et al. | 1991
- 2829
-
Resolution limits of optical lithographyOkazaki, Shinji et al. | 1991
- 2834
-
Remarkable effects in wet‐etched GaAs/GaAlAs ringsLee, K. Y. / Kern, D. P. / Ismail, K. / Washburn, S. et al. | 1991
- 2838
-
Direct nanometer scale patterning of SiO2 with electron‐beam irradiationAllee, D. R. / Umbach, C. P. / Broers, A. N. et al. | 1991
- 2842
-
Facetless Bragg reflector surface‐emitting AlGaAs/GaAs lasers fabricated by electron‐beam lithography and chemically assisted ion‐beam etchingTiberio, R. C. / Porkolab, G. A. / Rooks, M. J. / Wolf, E. D. / Lang, R. J. / Larsson, A. / Forouhar, S. / Cody, J. / Wicks, G. W. / Erdogan, T. et al. | 1991
- 2846
-
Free‐standing gratings and lenses for atom opticsKeith, David W. / Soave, Robert J. / Rooks, Michael J. et al. | 1991
- 2851
-
Nanofabrication techniques for 100 nm‐scale silicon metal oxide semiconductor field effect transistorReeves, C. M. / Hohn, F. J. / Wind, S. J. / Lii, Y. T. / Newman, T. H. / Bucchignano, J. J. / Klaus, D. P. / Chiong, K. N. et al. | 1991
- 2856
-
Split‐gate electron waveguide fabrication using multilayer poly(methylmethacrylate)Rooks, M. J. / Eugster, C. C. / del Alamo, J. A. / Snider, G. L. / Hu, E. L. et al. | 1991
- 2861
-
Fabrication of electroplated T gates with 60 nm gate length for pseudomorphic high electron mobility transistor devicesMarten, A. / Schneider, H. / Schweizer, H. / Nickel, H. / Schlapp, W. / Lösch, R. / Dämbkes, H. / Marschall, P. et al. | 1991
- 2866
-
First step towards application of high‐temperature superconductors for planar magnetic lensesAdriaanse, J. P. / van der Mast, K. D. / van Zuylen, P. et al. | 1991
- 2870
-
Fabrication of sub‐100‐nm T gates with SiN passivation layerNummila, K. / Tong, M. / Ketterson, A. A. / Adesida, I. et al. | 1991
- 2875
-
High resolution patterning of high Tc superconductorsKern, D. P. / Lee, K. Y. / Laibowitz, R. B. / Gupta, A. et al. | 1991
- 2879
-
Fabrication of 0.25 μm surface acoustic wave devices by ion beam proximity printingStumbo, D. P. / Sen, Sudipto / Damm, G. A. / Fong, F‐O. / Engler, D. W. / Fong, K‐F. / Wolfe, J. C. / Cho, Frederick et al. | 1991
- 2882
-
High quantum efficiency InGaAs/GaAs quantum wires defined by selective wet etchingGréus, Ch. / Forchel, A. / Straka, J. / Pieger, K. / Emmerling, M. et al. | 1991
- 2886
-
Full‐wafer technology for large‐scale laser processing and testingVoegeli, O. / Benedict, M. K. / Bona, G. L. / Buchmann, P. / Cahoon, N. / Dätwyler, K. / Dietrich, H. P. / Moser, A. / Sasso, G. / Seitz, H. K. et al. | 1991
- 2893
-
Electric field coupling to quantum dot diodesRandall, J. N. / Seabaugh, A. C. / Kao, Y.‐C. / Luscombe, J. H. / Newell, B. L. et al. | 1991
- 2898
-
0.5 μm GaAs metal semiconductor field effect transistor circuit fabrication using single layer I‐line photoresistsPomerene, Andrew T. S. / Greiner, James H. / Connolly, John J. et al. | 1991
- 2904
-
Fabrication of 25 nm gold‐bridges and observation of ballistic and quantum interference effectsLangheinrich, W. / Beneking, H. / Murek, U. / Braden, C. / Wohlleben, D. et al. | 1991
- 2908
-
Helium radio‐frequency‐plasma GaAs device isolation: Application to an in‐plane gated quantum wire transistorIngram, S. G. / Simpson, P. J. / Law, V. J. / Ritchie, D. A. / Jones, G. A. C. et al. | 1991
- 2912
-
Fabrication of open and buried quantum wires using a removable mask applicable for multiple processing stepsMenschig, A. / Kübler, P. A. / Prins, F. E. / Rudeloff, R. / Hommel, J. / Schweizer, H. et al. | 1991
- 2916
-
Low energy off‐axis focused ion beam Ga+ implantation into SiSteckl, A. J. / Mogul, H. C. / Novak, S. W. / Magee, C. W. et al. | 1991
- 2920
-
Fabrication of sub‐50 nm finger spacing and width high‐speed metal–semiconductor–metal photodetectors using high‐resolution electron beam lithography and molecular beam epitaxyChou, Stephen Y. / Liu, Yue / Fischer, Paul B. et al. | 1991
- 2925
-
100 kV Schottky electron gunMcGinn, J. B. / Swanson, L. W. / Martin, N. A. / Gesley, M. A. / McCord, M. A. / Viswanathan, R. / Hohn, F. J. / Wilson, A. D. / Naumann, R. / Utlaut, M. et al. | 1991
- 2929
-
High brightness limited area cathodesBroers, Alec / Xia, Shanhong / Maloney, Chris / Zhu, Xieqing / Munro, Eric et al. | 1991
- 2934
-
Aberrations of electron focusing and deflection systems in the presence of three‐dimensional perturbation fieldsRouse, John / Zhu, Xieqing / Munro, Eric et al. | 1991
- 2940
-
Electron optics for high throughput electron beam lithography systemSohda, Yasunari / Nakayama, Yoshinori / Saitou, Norio / Itoh, Hiroyuki / Todokoro, Hideo et al. | 1991
- 2944
-
A microwave eight‐pole transmission line deflector for 100 keV electronsMulder, E. H. / van der Mast, K. D. / Tauritz, J. L. et al. | 1991
- 2949
-
MEBES IV thermal‐field emission tandem optics for electron beam lithographyGesley, M. et al. | 1991
- 2955
-
Experimental evaluation of a scanning tunneling microscope‐microlens systemMuray, L. P. / Staufer, U. / Bassous, E. / Kern, D. P. / Chang, T. H. P. et al. | 1991
- 2962
-
Investigation of emitter tips for scanning tunneling microscope‐based microprobe systemsStaufer, U. / Muray, L. P. / Kern, D. P. / Chang, T. H. P. et al. | 1991
- 2967
-
Development of the field emission electron gun integrated in the sputter ion pumpYamazaki, Y. / Miyoshi, M. / Nagai, T. / Okumura, K. et al. | 1991
- 2972
-
A method of beam size approximation for field emission systemsSato, M. et al. | 1991
- 2977
-
On the design and effective strength of stigmators for electron beam lithographyGesley, M. / DeVore, W. et al. | 1991
- 2981
-
Advanced e‐beam lithographyTakigawa, T. / Wada, H. / Ogawa, Y. / Yoshikawa, R. / Mori, I. / Abe, T. et al. | 1991
- 2986
-
Quantum lithographyMaluf, Nadim I. / Pease, R. Fabian W. et al. | 1991
- 2992
-
A new approach to high fidelity e‐beam and ion‐beam lithography based on an in situ global‐fiducial gridSmith, Henry I. / Hector, Scott D. / Schattenburg, M. L. / Anderson, Erik H. et al. | 1991
- 2996
-
Projection electron‐beam lithography: A new approachBerger, S. D. / Gibson, J. M. / Camarda, R. M. / Farrow, R. C. / Huggins, H. A. / Kraus, J. S. / Liddle, J. A. et al. | 1991
- 3000
-
Mask fabrication for projection electron‐beam lithography incorporating the SCALPEL techniqueLiddle, J. A. / Huggins, H. A. / Berger, S. D. / Gibson, J. M. / Weber, G. / Kola, R. / Jurgensen, C. W. et al. | 1991
- 3005
-
An electron‐beam inspection system for x‐ray mask productionSandland, P. / Meisburger, W. D. / Clark, D. J. / Simmons, R. R. / Smith, D. E. A. / Veneklasen, L. H. / Becker, B. G. / Brodie, A. D. / Chadwick, C. H. / Chen, Z. W. et al. | 1991
- 3010
-
Requirements and performance of an electron‐beam column designed for x‐ray mask inspectionMeisburger, W. D. / Desai, A. A. / Brodie, A. D. et al. | 1991
- 3015
-
Performance of the EL‐3+ maskmakerHartley, John / Groves, Timothy / Pfeiffer, Hans et al. | 1991
- 3019
-
A servo guided X–Y–theta stage for electron beam lithographyKendall, Rodney / Doran, Sam / Weissmann, Erwin et al. | 1991
- 3024
-
Scanning tunneling microscope lithography: A solution to electron scatteringDobisz, E. A. / Marrian, C. R. K. et al. | 1991
- 3028
-
Reliability enhancements for the direct wafer exposure electron beam system EB60Watanabe, Takashi / Morosawa, Tetsuo / Shimazu, Nobuo / Morita, Hirofumi / Yamauchi, Hironori / Iwata, Atsushi et al. | 1991
- 3033
-
Preliminary analysis of electron‐beam positioning errors in Lepton EBES4Waggener, H. A. / Peters, D. W. / Chen, G. / Rose, C. M. / Fowlis, D. C. / Chitayat, A. / Caracci, J. et al. | 1991
- 3039
-
Charging effects on trilevel resist and metal layer in electron‐beam lithographyItoh, Hiroyuki / Nakamura, Kazumitsu / Hayakawa, Hajime et al. | 1991
- 3043
-
Proximity correction using computer aided proximity correction (CAPROX): Evaluation and applicationHintermaier, M. / Hofmann, U. / Hübner, B. / Kalus, C. K. / Knapek, E. / Koops, H. W. P. / Schlager, R. / Seebald, E. / Weber, M. et al. | 1991
- 3048
-
Proximity effect correction in electron‐beam lithography: A hierarchical rule‐based scheme—PYRAMIDLee, Soo‐Young / Jacob, Joseph C. / Chen, Chung‐Ming / McMillan, Jo A. / MacDonald, Noel C. et al. | 1991
- 3054
-
Adaptive neural network algorithms for computing proximity effect correctionsFrye, Robert C. et al. | 1991
- 3059
-
The representative figure method for the proximity effect correction [III]Abe, Takayuki / Yamasaki, Satoshi / Yoshikawa, Ryoichi / Takigawa, Tadahiro et al. | 1991
- 3063
-
Optimizing electron beam lithography writing strategy subject to electron optical, pattern, and resist constraintsVeneklasen, Lee H. et al. | 1991
- 3070
-
Theoretical model for scanning electron microscopy through thin film windowsGreen, E. D. / Kino, G. S. et al. | 1991
- 3074
-
Nanostructures processing by focused ion beam implantationPetroff, P. M. / Li, Y. J. / Xu, Z. / Beinstingl, W. / Sasa, S. / Ensslin, K. et al. | 1991
- 3079
-
A low magnification focused ion beam system with 8 nm spot sizeKubena, R. L. / Ward, J. W. / Stratton, F. P. / Joyce, R. J. / Atkinson, G. M. et al. | 1991
- 3084
-
Filamentless neutralization of broad ion beamsKorzec, D. / Kessler, T. / Keller, H. M. / Engemann, J. et al. | 1991
- 3090
-
An ion counting apparatus for studying the statistics of ion emission from liquid metal ion sourcesWard, J. W. / Kubena, R. L. / Joyce, R. J. et al. | 1991
- 3095
-
Control of diamond film microstructure by use of seeded focused ion beam crater arraysKirkpatrick, A. R. / Ward, B. W. et al. | 1991
- 3099
-
In situ patterning of GaAs by focused ion beamKosugi, T. / Yamashiro, T. / Aihara, R. / Gamo, K. / Namba, S. et al. | 1991
- 3103
-
Near‐field scanning optical microscopy IIIsaacson, M. / Cline, J. A. / Barshatzky, H. et al. | 1991
- 3108
-
Markle–Dyson optics for 0.25 μm lithography and beyondGrenville, A. / Hsieh, R. L. / von Bünau, R. / Lee, Y‐H. / Markle, D. A. / Owen, G. / Pease, R. F. W. et al. | 1991
- 3113
-
Spatial filtering for depth of focus and resolution enhancement in optical lithographyFukuda, Hiroshi / Terasawa, Tsuneo / Okazaki, Shinji et al. | 1991
- 3117
-
Fabricating binary optics: Process variables critical to optical efficiencyStern, M. B. / Holz, M. / Medeiros, S. S. / Knowlden, R. E. et al. | 1991
- 3122
-
Recent advances in an excimer laser source for microlithographyElliott, D. J. / Pennelli, C. P. / Sengupta, U. K. et al. | 1991
- 3126
-
Reducing coherence in a fifth‐harmonic YAG source (213 nm) for use in microlithographyPartlo, William N. / Oldham, William G. et al. | 1991
- 3132
-
Dry etched molybdenum silicide photomasks for submicron integrated circuit fabricationPierrat, C. / Tarascon, R. G. / Peabody, M. L. / Harriott, L. R. / Vaidya, S. et al. | 1991
- 3138
-
Silicon on quartz reflective masks for 0.25‐μm microlithographyLee, Y. H. / Hsieh, R. L. / Grenville, A. / von Bünau, R. / Tsai, C. C. / Markle, D. A. / Owen, G. / Browning, R. / Pease, R. F. W. et al. | 1991
- 3143
-
Modeling and characterization of a 0.5 μm deep ultraviolet processMack, Chris A. / Capsuto, Elliott / Sethi, Satyendra / Witowski, Joyce et al. | 1991
- 3150
-
Fabrication of phase‐shifting masks with shifter overcoatKostelak, R. L. / Garofalo, J. G. / Smolinsky, G. / Vaidya, S. et al. | 1991
- 3155
-
Fabrication of grooved glass substrates by phase mask lithographyBrock, Phillip J. / Levenson, Marc D. / Zavislan, James M. / Lyerla, James R. / Cheng, John C. / Podlogar, Carl V. et al. | 1991
- 3162
-
Azide–novolak resin negative photoresist for i‐line phase‐shifting lithographyUchino, Shou‐ichi / Tanaka, Toshihiko / Ueno, Takumi / Iwayanagi, Takao / Hayashi, Nobuaki et al. | 1991
- 3166
-
Phase‐shifting mask and top‐imaging resist for subhalf‐micron i‐line and deep‐ultraviolet lithographyTedesco, S. / Picard, B. / Chevalier, M. / Dal’zotto, B. et al. | 1991
- 3172
-
Sub‐quarter‐micron gate pattern fabrication using a transparent phase shifting maskWatanabe, Hisashi / Takenaka, Hiroshi / Todokoro, Yoshihiro / Inoue, Morio et al. | 1991
- 3176
-
Reflective mask technologies and imaging results in soft x‐ray projection lithographyTennant, D. M. / Bjorkholm, J. E. / D’Souza, R. M. / Eichner, L. / Freeman, R. R. / Pastalan, J.Z. / Szeto, L. H. / Wood, O. R. / Jewell, T. E. / Mansfield, W. M. et al. | 1991
- 3184
-
Diffraction‐limited soft x‐ray projection lithography with a laser plasma sourceKubiak, G. D. / Tichenor, D. A. / Malinowski, M. E. / Stulen, R. H. / Haney, S. J. / Berger, K. W. / Brown, L. A. / Bjorkholm, J. E. / Freeman, R. R. / Mansfield, W. M. et al. | 1991
- 3189
-
Two‐mirror telecentric optics for soft x‐ray reduction lithographyKurihara, Kenji / Kinoshita, Hiroo / Mizota, Tsutomu / Haga, Tsuneyuki / Torii, Yasuhiro et al. | 1991
- 3193
-
Soft x‐ray projection lithography using a 1:1 ring field optical systemMacDowell, A. A. / Bjorkholm, J. E. / Bokor, J. / Eichner, L. / Freeman, R. R. / Mansfield, W. M. / Pastalan, J. / Szeto, L. H. / Tennant, D. M. / Wood, O. R. et al. | 1991
- 3198
-
Preliminary evaluation of a laser‐based proximity x‐ray stepperFrackoviak, J. / Celler, G. K. / Freeman, R. R. / Jurgensen, C. W. / Kola, R. R. / Novembre, A. E. / Tai, W. W. / Thompson, L. F. / Trimble, L. E. / Tomes, D. N. et al. | 1991
- 3202
-
A mask‐to‐wafer alignment and gap setting method for x‐ray lithography using gratingsUchida, Norio / Ishibashi, Yoriyuki / Hirano, Ryoichi et al. | 1991
- 3207
-
Verification of partially coherent light diffraction models in x‐ray lithographyGuo, Jerry Z. Y. / Cerrina, Franco et al. | 1991
- 3214
-
High efficiency beamline for synchrotron radiation lithographyKaneko, Takashi / Saitoh, Yasunao / Itabashi, Seiichi / Yoshihara, Hideo et al. | 1991
- 3218
-
Highly reliable oscillating mirror system for synchrotron radiation lithographyKuroda, H. / Fujii, K. / Suzuki, K. et al. | 1991
- 3222
-
Experimental evaluation of the two‐state alignment systemChen, G. / Wallace, J. / Cerrina, F. / Palmer, S. / Newell, B. / Randall, J. et al. | 1991
- 3227
-
Effects of mirror surface roughness on exposure field uniformity in synchrotron x‐ray lithographyWells, G. M. / Nachman, R. / Welnak, C. / Singh, S. / Guo, J. / Khan, M. / Turner, S. / Cerrina, F. / Vladimirsky, Y. / Maldonado, J. et al. | 1991
- 3232
-
Electromagnetic calculation of soft x‐ray diffraction from 0.1‐μm scale gold structuresSchattenburg, M. L. / Li, K. / Shin, R. T. / Kong, J. A. / Olster, D. B. / Smith, Henry I. et al. | 1991
- 3237
-
Wafer process‐induced distortion study for x‐ray technologySchmidt, Dennis / Charache, Greg et al. | 1991
- 3241
-
Fabrication of a 1 Mbit dynamic random access memory with four levels using x‐ray lithographyHoffman, S. / Nash, S. / Ritter, R. / Smith, W. et al. | 1991
- 3245
-
Intense pulsed plasma x‐ray source for lithographyKalantar, D. H. / Hammer, D. A. / Mittal, K. C. / Qi, N. / Maldonado, J. R. / Vladimirsky, Y. et al. | 1991
- 3250
-
Synchrotron radiation damage study of lateral pnp transistors in x‐ray lithographyHsia, L. C. / Aitken, J. et al. | 1991
- 3254
-
SiC membranes for x‐ray masks produced by laser ablation depositionBoily, S. / Chaker, M. / Pépin, H. / Kerdja, T. / Voyer, J. / Jean, A. / Kieffer, J. C. / Leung, P. / Cerrina, F. / Wells, G. et al. | 1991
- 3258
-
Advanced electron cyclotron resonance chemical vapor deposition SiC coatings and x‐ray mask membranesShimkunas, A. R. / Mauger, P. E. / Bourget, L. P. / Post, R. S. / Smith, L. / Davis, R. F. / Wells, G. M. / Cerrina, F. / McIntosh, R. B. et al. | 1991
- 3262
-
A study of radiation damage in SiN and SiC mask membranesItoh, Masamitsu / Hori, Masaru / Komano, Haruki / Mori, Ichiro et al. | 1991
- 3266
-
X‐ray irradiation effects on a microwave‐plasma chemical vapor deposition diamond membraneSuzuki, K. / Kumar, R. / Windischmann, H. / Sano, H. / Iimura, Y. / Miyashita, H. / Watanabe, N. et al. | 1991
- 3270
-
Photoelectron effects in x‐ray mask replicationWhite, V. / Ocola, L. / Cerrina, F. / Vladimirsky, Y. / Maldonado, J. et al. | 1991
- 3275
-
Dynamic in‐plane thermal distortion analysis of an x‐ray mask membrane for synchrotron radiation lithographyChiba, Akira / Okada, Koichi et al. | 1991
- 3280
-
Tungsten patterning for 1:1 x‐ray masksJurgensen, C. W. / Kola, R. R. / Novembre, A. E. / Tai, W. W. / Frackoviak, J. / Trimble, L. E. / Celler, G. K. et al. | 1991
- 3287
-
Fabrication and characterization of high‐flatness mesa‐etched silicon nitride x‐ray masksMoel, A. / Chu, W. / Early, K. / Ku, Y.‐C. / Moon, E. E. / Tsai, F. / Smith, Henry I. / Schattenburg, M. L. / Fung, C. D. / Griffith, F. W. et al. | 1991
- 3292
-
Patterning tungsten films with an electron beam lithography system at 50 keV for x‐ray mask applicationsRhee, K. W. / Ting, A. C. / Shirey, L. M. / Foster, K. W. / Andrews, J. M. / Peckerar, M. C. / Ku, Y.‐C. et al. | 1991
- 3297
-
In situ stress monitoring and deposition of zero‐stress W for x‐ray masksKu, Y.‐C. / Ng, Lee‐Peng / Carpenter, Roger / Lu, Kenneth / Smith, Henry I. / Haas, L. E. / Plotnik, I. et al. | 1991
- 3301
-
Stable low‐stress tungsten absorber technology for sub‐half‐micron x‐ray lithographyKola, R. R. / Celler, G. K. / Frackoviak, J. / Jurgensen, C. W. / Trimble, L. E. et al. | 1991
- 3306
-
Elastic deformation of x‐ray lithography masks under external loadingsChen, A. C. / Lalapet, S. N. / Maldonado, J. R. et al. | 1991
- 3310
-
X‐ray mask distortion from arbitrary integrated circuit patterns: Closed‐form and finite‐element calculationYanof, Arnold W. et al. | 1991
- 3315
-
Application of e‐beam lithography and reactive ion etching to the fabrication of masks for projection x‐ray lithographyMalek, C. Khan / Ladan, F. R. / Rivoira, R. / Moreno, T. et al. | 1991
- 3319
-
0.1 μm x‐ray mask replicationGentili, M. / Kumar, R. / Luciani, L. / Grella, L. / Plumb, D. / Leonard, Q. et al. | 1991
- 3324
-
X‐ray mask process‐induced distortion studyNash, S. C. / Faure, T. B. et al. | 1991
- 3329
-
Effect of thermal treatment on the mechanical and structural properties of gold thin filmsMalek, C. Khan / Kebabi, B. / Charai, A. / de la Houssaye, P. et al. | 1991
- 3333
-
Optimal design of an x‐ray lithography maskLaird, D. L. / Engelstad, R. L. et al. | 1991
- 3338
-
PTBSS: A high resolution single component aqueous base soluble chemically amplified resistNovembre, A. E. / Tai, W. W. / Kometani, J. M. / Hanson, J. E. / Nalamasu, O. / Taylor, G. N. / Reichmanis, E. / Thompson, L. F. / Tomes, D. N. et al. | 1991
- 3343
-
Novolak resin‐based positive electron‐beam resist system utilizing acid‐sensitive polymeric dissolution inhibitor with solubility reversal reactivityShiraishi, Hiroshi / Hayashi, Nobuaki / Ueno, Takumi / Sakamizu, Toshio / Murai, Fumio et al. | 1991
- 3348
-
A positive, chemically amplified, aromatic methacrylate resist employing the tetrahydropyranyl protecting groupTaylor, Gary N. / Stillwagon, Larry E. / Houlihan, Francis M. / Wolf, Thomas M. / Sogah, Dotsevi Y. / Hertler, Walter R. et al. | 1991
- 3357
-
High performance acrylic polymers for chemically amplified photoresist applicationsAllen, Robert D. / Wallraff, Gregory M. / Hinsberg, William D. / Simpson, Logan L. et al. | 1991
- 3362
-
A statistically based model of electron‐beam exposed, chemically amplified negative resistTam, N. N. / Liu, H. Y. / Spanos, C. / Neureuther, A. R. et al. | 1991
- 3370
-
Electron impact reactions of triphenylsulfonium salt resist sensitizers in the solid stateHaller, Ivan / Stewart, Kevin J. et al. | 1991
- 3374
-
Process characteristics of an all‐organic chemically amplified deep‐ultraviolet resistCheng, M. / Nalamasu, O. / Timko, A. G. / Pol, V. / Kometani, J. M. / Reichmanis, E. / Thompson, L. F. et al. | 1991
- 3380
-
The relationship between critical dimension shift and diffusion in negative chemically amplified resist systemsFedynyshyn, Theodore H. / Cronin, Michael F. / Szmanda, Charles R. et al. | 1991
- 3387
-
Metal‐free chemically amplified positive resist resolving 0.2 μm in x‐ray lithographyBan, Hiroshi / Nakamura, Jiro / Deguchi, Kimiyoshi / Tanaka, Akinobu et al. | 1991
- 3392
-
The influence of post‐exposure bake on linewidth control for the resist system RAY‐PN (AZ PN 100) in x‐ray mask fabricationGrimm, J. / Chlebek, J. / Schulz, T. / Huber, H.‐L. et al. | 1991
- 3399
-
Comparative study between gas‐ and liquid‐phase silylation for the diffusion‐enhanced silylated resist processBaik, Ki‐Ho / Van den hove, L. / Roland, B. et al. | 1991
- 3406
-
X‐ray photoelectron spectroscopy and infrared study of the processing of a silylated positive photoresistHaring, Ruud A. / Stewart, Kevin J. et al. | 1991
- 3413
-
Development of bilayer resists for deep‐ultraviolet and i‐line applicationMcKean, D. R. / Clecak, N. J. / Renaldo, A. F. et al. | 1991
- 3418
-
A top antireflector process for improved linewidth control and alignmentBrunner, T. A. / Lyons, C. F. / Miura, S. S. et al. | 1991
- 3423
-
In situ ellipsometric measurements of x‐ray resistsSullivan, Monroe / Taylor, James W. / Babcock, Carl et al. | 1991
- 3428
-
Lithographic applications of conducting polymersAngelopoulos, Marie / Shaw, Jane M. / Lee, Kam‐Leung / Huang, Wu‐Song / Lecorre, Marie‐Annick / Tissier, Michel et al. | 1991
- 3432
-
Surface imaging of focused ion‐beam exposed resistsHartney, M. A. / Shaver, D. C. / Shepard, M. I. / Melngailis, J. / Medvedev, V. / Robinson, W. P. et al. | 1991
- 3436
-
Silicon‐containing resist for phase‐shifting masksWatanabe, Hisashi / Todokoro, Yoshihiro / Inoue, Morio et al. | 1991
- 3440
-
Modeling of shot noise in x‐ray photoresist exposureTurner, S. / Babcock, C. / Cerrina, F. et al. | 1991
- 3447
-
Deep ultraviolet patterning of monolayer films for high resolution lithographyCalvert, Jeffrey M. / Chen, Mu‐San / Dulcey, Charles S. / Georger, Jacque H. / Peckerar, Martin C. / Schnur, Joel M. / Schoen, Paul E. et al. | 1991
- 3451
-
Structural damage induced by Ga+ focused ion beam implantation in (001) SiChu, C. H. / Hsieh, Y. F. / Harriott, L. R. / Wade, H. H. et al. | 1991
- 3456
-
Optical studies of direct modulation doping and quantum wire formation by focused Si on beam implantationLi, Y. J. / Sasa, S. / Beinstingl, W. / Miller, M. S. / Xu, Z. / Snider, G. / Petroff, P. M. et al. | 1991
- 3459
-
Fabrication of optical beamwidth transformers for guided waves on InP using wedge‐shaped taper structuresZengerle, R. / Brückner, H.‐J. / Koops, H. W. P. / Olzhausen, H.‐J. / Zesch, G. / Kohl, A. / Menschig, A. et al. | 1991
- 3464
-
Criterion to judge whether the resist heating effect will occurSaito, Kenich / Sakai, Tomoaki et al. | 1991
- 3470
-
Thermal effects in high voltage e‐beam lithographyvan der Drift, E. / Enters, A. C. / Radelaar, S. et al. | 1991
- 3475
-
Electron beam induced metalization of palladium acetateStark, T. J. / Mayer, T. M. / Griffis, D. P. / Russell, P. E. et al. | 1991
- 3479
-
Optical properties of quantum structures fabricated by focused Ga+ ion beam implantationBeinstingl, W. / Li, Y. J. / Weman, H. / Merz, J. / Petroff, P. M. et al. | 1991
- 3483
-
Direct writing of iridium lines with a focused ion beamHoffmann, P. / van den Bergh, H. / Flicstein, J. / Assayag, G. Ben / Gierak, J. / Bresse, J.‐F. et al. | 1991
- 3487
-
Plasma particulate contamination control. I. Transport and process effectsSelwyn, Gary S. et al. | 1991
- 3493
-
Circular polarized electron cyclotron resonance sourcePongratz, S. / Gesche, R. / Kretschmer, K.‐H. / Lorenz, G. / Hafner, M. / Zink, J. et al. | 1991
- 3498
-
Strain‐induced lateral confinement of excitons in GaAs/AlGaAs quantum well by chemical dry etchingTan, I.‐H. / Lishan, D. G. / Mirin, R. / Jayaraman, V. / Yasuda, T. / Prater, C. B. / Hu, E. L. / Bowers, J. E. / Hansma, P. K. et al. | 1991
- 3502
-
Electron cyclotron resonance plasma preparation of GaAs substrates for molecular beam epitaxyChoquette, Kent D. / Hong, M. / Freund, Robert S. / Mannaerts, J. P. / Wetzel, Robert C. et al. | 1991
- 3506
-
Self‐aligned high electron mobility transistor gate fabrication using focused ion beamsAtkinson, G. M. / Kubena, R. L. / Larson, L. E. / Nguyen, L. D. / Stratton, F. P. / Jelloian, L. M. / Le, M. V. / McNulty, H. et al. | 1991
- 3511
-
Superconducting‐normal metal interfaces produced by reactive ion etchingLin, K. / Kwong, Y. K. / Park, M. / Parpia, J. M. / Isaacson, M. S. et al. | 1991
- 3516
-
Investigation of radical‐beam ion‐beam etching‐induced damage in GaAs/AlGaAs quantum‐well structuresSkidmore, J. A. / Green, D. L. / Young, D. B. / Olsen, J. A. / Hu, E. L. / Coldren, L. A. / Petroff, P. M. et al. | 1991
- 3521
-
Anisotropic etching of submicron silicon features in a 23 cm diameter microwave multicusp electron‐cyclotron‐resonance plasma reactorMusson, B. D. / Sze, F. C. / Reinhard, D. K. / Asmussen, J. et al. | 1991
- 3526
-
Investigations of dry etching in AlGaInP/GaInP using CCl2F2/Ar reactive ion etching and Ar ion beam etchingHommel, J. / Moser, M. / Geiger, M. / Scholz, F. / Schweizer, H. et al. | 1991
- 3530
-
Etching of GaAs and InP using a hybrid microwave and radio‐frequency systemPang, S. W. / Liu, Y. / Sung, K. T. et al. | 1991
- 3535
-
Anisotropic reactive ion etching of InP in methane/hydrogen based plasmasMcNabb, J. W. / Craighead, H. G. / Temkin, H. / Logan, R. A. et al. | 1991
- 3538
-
Selective reactive ion etching of GaAs/AlGaAs metal‐semiconductor field effect transistorsCameron, N. I. / Hopkins, G. / Thayne, I. G. / Beaumont, S. P. / Wilkinson, C. D. W. / Holland, M. / Kean, A. H. / Stanley, C. R. et al. | 1991
- 3542
-
In situ device electrical parameter adjustment and monitoring during remote plasma dry etchingLishan, David G. / Snider, Gregory L. / Hu, Evelyn L. et al. | 1991
- 3546
-
Optical studies of dry etched GaAsGlembocki, O. J. / Taylor, B. E. / Dobisz, E. A. et al. | 1991
- 3551
-
Etching of indium tin oxide in methane/hydrogen plasmasAdesida, I. / Ballegeer, D. G. / Seo, J. W. / Ketterson, A. / Chang, H. / Cheng, K. Y. / Gessert, T. et al. | 1991
- 3555
-
Statistics of pattern placement errors in lithographyGroves, T. R. et al. | 1991
- 3562
-
Submicron Si trench profiling with an electron‐beam fabricated atomic force microscope tipLee, Kam L. / Abraham, David W. / Secord, F. / Landstein, L. et al. | 1991
- 3569
-
Scanning probe tip geometry optimized for metrology by focused ion beam ion millingVasile, M. J. / Grigg, D. / Griffith, J. E. / Fitzgerald, E. / Russell, P. E. et al. | 1991
- 3573
-
A new high‐speed simulation method for electron‐beam critical dimension metrology profile modelingWang, Xinlei / Joy, David C. et al. | 1991
- 3578
-
An elastic cross section model for use with Monte Carlo simulations of low energy electron scattering from high atomic number targetsBrowning, R. / Eimori, T. / Traut, E. P. / Chui, B. / Pease, R. F. W. et al. | 1991
- 3582
-
Alignment and registration schemes for projection electron lithographyFarrow, R. C. / Berger, S. D. / Gibson, J. M. / Liddle, J. A. / Kraus, J. S. / Camarda, R. M. / Huggins, H. A. et al. | 1991
- 3586
-
Characterization of scanning probe microscope tips for linewidth measurementGriffith, J. E. / Grigg, D. A. / Vasile, M. J. / Russell, P. E. / Fitzgerald, E. A. et al. | 1991
- 3590
-
Low voltage backscattered electron collection for package substrates and integrated circuit inspectionLee, K. L. / Ward, M. et al. | 1991
- 3597
-
High‐precision motion and alignment in an ion‐beam proximity printing systemStumbo, D. P. / Damm, G. A. / Sen, S. / Engler, D. W. / Fong, F‐O. / Wolfe, J. C. / Oro, James A. et al. | 1991
- 3601
-
A lower bound on alignment accuracy and subpixel resolution in lithographyGatherer, Alan / Meng, Teresa H.‐Y. et al. | 1991
- 3606
-
Metrology of electron‐beam lithography systems using holographically produced reference samplesAnderson, Erik H. / Boegli, Volker / Schattenburg, Mark L. / Kern, Dieter / Smith, Henry I. et al. | 1991
- 3612
-
Two‐dimensional atomic force microprobe trench metrology systemNyyssonen, D. / Landstein, L. / Coombs, E. et al. | 1991